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Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU1508DX

GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.

QUICK REFERENCE DATA


SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time CONDITIONS VBE = 0 V TYP. 4.5 1.6 0.4 MAX. 1500 700 8 15 35 1.0 0.6 UNIT V V A A W V A V s

Ths 25 C IC = 4.5 A; IB = 1.1 A IF = 4.5 A ICM = 4.5 A; IB(end) = 1.1 A

PINNING - SOT186A
PIN 1 2 3 base collector emitter DESCRIPTION

PIN CONFIGURATION
case

SYMBOL

c b
Rbe

case isolated
1 2 3

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1500 700 8 15 4 6 100 5 35 150 150 UNIT V V A A A A mA A W C C

average over any 20 ms period Ths 25 C

THERMAL RESISTANCES
SYMBOL Rth j-hs Rth j-a PARAMETER Junction to heatsink Junction to ambient CONDITIONS with heatsink compound in free air TYP. 55 MAX. 3.6 UNIT K/W K/W

1 Turn-off current.

September 1997

Rev 1.300

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU1508DX

ISOLATION LIMITING VALUE & CHARACTERISTIC


Ths = 25 C unless otherwise specified SYMBOL Visol PARAMETER R.M.S. isolation voltage from all three terminals to external heatsink CONDITIONS f = 50-60 Hz; sinusoidal waveform; R.H. 65% ; clean and dustfree MIN. TYP. MAX. 2500 UNIT V

Cisol

Capacitance from T2 to external f = 1 MHz heatsink

10

pF

STATIC CHARACTERISTICS
Ths = 25 C unless otherwise specified SYMBOL ICES ICES IEBO BVEBO Rbe VCEOsust VCEsat VBEsat hFE hFE VF PARAMETER Collector cut-off current
2

CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125C VEB = 7.5 V; IC = 0 A IB = 600 mA VEB = 7.5 V IB = 0 A; IC = 100 mA; L = 25 mH IC = 4.5 A; IB = 1.1 A IC = 4.5 A; IB = 1.7 A IC = 1 A; VCE = 5 V IC = 4.5 A; VCE = 1 V IF = 4.5 A

MIN. 140 7.5 700 4 -

TYP. 13.5 33 13 5.5 1.6

MAX. 1.0 2.0 390 1.0 1.3 7.0 2.0

UNIT mA mA mA V V V V V

Emitter cut-off current Emitter-base breakdown voltage Base-emitter resistance Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain Diode forward voltage

DYNAMIC CHARACTERISTICS
Ths = 25 C unless otherwise specified SYMBOL Cc PARAMETER Collector capacitance Switching times (line deflection circuit). Fig.1, Fig.2 and Fig.3. Turn-off storage time Turn-off fall time CONDITIONS IE = 0 A; VCB = 10 V; f = 1 MHz ICM = 4.5 A; IB(end) = 1.1 A; LB = 6 H; -VBB = 4 V; (-dIB/dt = 0.6 A/s) TYP. 80 MAX. UNIT pF s s

ts tf

5.0 0.4

6.0 0.6

2 Measured with half sine-wave voltage (curve tracer).

September 1997

Rev 1.300

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU1508DX

TRANSISTOR IC DIODE

ICsat

100

h FE

Tj = 25 C Tj = 125 C

5V

IB

IBend

10
t 20us 26us 64us VCE

1V

1 0.01
t

0.1 IC / A

10

Fig.1. Switching times waveforms.

Fig.4. Typical DC current gain. hFE = f (IC) parameter VCE


VBESAT / V 1.2 1.1
Tj = 25 C Tj = 125 C

ICsat 90 % IC

1.0 0.9
10 % tf ts

0.8
t

IC/IB= 3 4 5

0.7 0.6
t

IB IBend

0.5 0.4 0.1 1 IC / A 10

- IBM

Fig.2. Switching times definitions.

Fig.5. Typical base-emitter saturation voltage. VBEsat = f (IC); parameter IC/IB


VCESAT / V 1.0 0.9 0.8 IC/IB= 5 4 3
Tj = 25 C Tj = 125 C

+ 150 v nominal adjust for ICsat

1mH

0.7 0.6 0.5

D.U.T. IBend LB 12nF


Rbe

0.4 0.3 0.2 0.1 0 0.1

-VBB

1 IC / A

10

Fig.3. Switching times test circuit.

Fig.6. Typical collector-emitter saturation voltage. VCEsat = f (IC); parameter IC/IB

September 1997

Rev 1.300

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU1508DX

1.2 1.1 1.0 0.9 0.8 0.7 0.6

VBESAT / V
Tj = 25 C Tj = 125 C

IC= 6A 4.5A 3A 2A 0 1 2 IB / A 3 4

12 11 10 9 8 7 6 5 4 3 2 1 0

ts, tf / us ts

IC = 4.5A 3.5A tf 0.1 1 IB / A 10

Fig.7. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter IC


VCESAT / V
Tj = 25 C Tj = 125 C

Fig.10. Typical collector storage and fall time. ts = f (IB); tf = f (IB); parameter IC; Tj = 85C
Normalised Power Derating
with heatsink compound

10

120 110 100 90 80 70 60 50 40 30 20 10 0

PD%

6A 4.5A 1 3A IC=2A 0.1

0.1

1 IB / A

10

20

40

60

80 Ths / C

100

120

140

Fig.8. Typical collector-emitter saturation voltage. VCEsat = f (IB); parameter IC


Eoff / uJ

Fig.11. Normalised power dissipation. PD% = 100PD/PD 25C = f (Ths)


Zth / (K/W) 10

1000

IC = 4.5A
0.5 1 0.2 0.1 0.05 0.1 0.02 D=0
T P D tp D= tp T t

3.5A 100

10 0.1 1 IB / A 10

0.01 1E-06

1E-04

1E-02 t/s

1E+00

Fig.9. Typical turn-off losses. Tj = 85C Eoff = f (IB); parameter IC

Fig.12. Transient thermal impedance. Zth j-hs = f(t); parameter D = tp/T

September 1997

Rev 1.300

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU1508DX

100

IC / A

= 0.01

ICM max 10 IC max


II

tp =

10 us

Ptot max

100 us

1 ms

0.1
10 ms DC

0.01 1 10 100 VCE / V 1000

Fig.13. Forward bias safe operating area. Ths = 25C I Region of permissible DC operation. II Extension for repetitive pulse operation.
NB: Mounted with heatsink compound and 30 5 newton force on the centre of the envelope.

September 1997

Rev 1.300

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU1508DX

MECHANICAL DATA
Dimensions in mm Net Mass: 2 g
10.3 max 3.2 3.0

4.6 max 2.9 max

Recesses (2x) 2.5 0.8 max. depth

2.8 6.4 15.8 19 max. max. seating plane 15.8 max

3 max. not tinned 3 2.5 13.5 min. 1 0.4


M

3 1.0 (2x) 0.6 2.54 0.5 2.5 1.3 0.9 0.7

5.08

Fig.14. SOT186A; The seating plane is electrically isolated from all terminals.
Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8".

September 1997

Rev 1.300

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU1508DX

DEFINITIONS
Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

LIFE SUPPORT APPLICATIONS


These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

September 1997

Rev 1.300