1N582x

LOW DROP POWER SCHOTTKY RECTIFIER

MAIN PRODUCTS CHARACTERISTICS IF(AV) VRRM Tj VF (max) FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP DO-201AD DESCRIPTION Axial Power Schottky rectifier suited for Switch Mode Power Supplies and high frequency DC to DC converters. Packaged in DO-201AD these devices are intended for use in low voltage, high frequency inverters, free wheeling, polarity protection and small battery chargers. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IF(AV) Parameter Repetitive peak reverse voltage RMS forward current Average forward current TL = 100C = 0.5 TL = 110C = 0.5 IFSM Tstg Tj dV/dt * : Surge non repetitive forward current Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage tp = 10 ms Sinusoidal 3 3 80 - 65 to + 150 150 10000 Value 1N5820 1N5821 1N5822 20 30 40 10 3 Unit V A A A A C C V/s 3A 40 V 150C 0.475 V

dPtot 1 < thermal runaway condition for a diode on its own heatsink dTj Rth(ja)

July 1999 - Ed: 2A

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THERMAL RESISTANCES Symbol Rth (j-a) Rth (j-l) Junction to ambient Junction to lead Parameter Lead length = 10 mm Lead length = 10 mm Value 80 25 Unit C/W C/W

STATIC ELECTRICAL CHARACTERISTICS Symbol IR * Parameter Reverse leakage current Forward voltage drop Tests Conditions Tj = 25C Tj = 100C Tj = 25C Tj = 25C Pulse test : * tp = 380 s, < 2% To evaluate the conduction losses use the following equations : P = 0.33 x IF(AV) + 0.035 IF2(RMS ) for 1N5820 / 1N5821 P = 0.33 x IF(AV) + 0.060 IF2(RMS ) for 1N5822 IF = 3 A IF = 9.4 A VR = VRRM 1N5820 1N5821 1N5822 2 20 0.475 0.85 2 20 0.5 0.9 2 20 0.525 0.95 Unit mA mA V V

VF *

Fig. 1: Average forward power dissipation versus average forward current (1N5820/1N5821).
1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.0 0.5 1.0 1.5 IF(av) (A) 2.0 2.5
=tp/T
T

Fig. 2: Average forward power dissipation versus average forward current (1N5822).
PF(av)(W) 2.0 1.8 = 0.05 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.0 0.5 1.0

PF(av)(W)
= 0.1 = 0.05 =1 = 0.2 = 0.5

= 0.1

= 0.2

= 0.5

=1

tp

IF(av) (A)

=tp/T

tp

3.0

3.5

4.0

1.5

2.0

2.5

3.0

3.5

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Fig. 2-1: Average forward current versus ambient temperature (=0.5) (1N5820/1N5821).
IF(av)(A) 3.5
Rth(j-a)=Rth(j-l)=25C/W

Fig. 2-2: Average forward current versus ambient temperature (=0.5) (1N5822).
IF(av)(A) 3.5
Rth(j-a)=Rth(j-l)=25C/W

3.0 2.5 2.0 1.5 1.0 0.5 0.0 0

=tp/T
T
Rth(j-a)=80C/W

3.0 2.5 2.0 1.5 1.0 0.5

T
Rth(j-a)=80C/W

tp

Tamb(C) 50 75 100 125 150

0.0

=tp/T

tp

Tamb(C)

25

25

50

75

100

125

150

Fig. 3-1: Non repetitive surge peak forward current versus overload duration (maximum values) (1N5820/1N5821).
IM(A) 16 14 12 10 8 6 4
IM

Fig. 3-2: Non repetitive surge peak forward current versus overload duration (maximum values) (1N5822).
IM(A) 12 11 10 9 8 7 6 5 4 3 IM 2 1 0 1E-3

Ta=25C

Ta=25C Ta=75C

Ta=75C

Ta=100C
t

Ta=100C

2 0 1E-3

=0.5

t(s) 1E-2 1E-1 1E+0

=0.5

t(s)
1E-2 1E-1 1E+0

Fig. 4: Relative variation of thermal impedance junction to ambient versus pulse duration (epoxy printed circuit board, e(Cu)=35mm, recommended pad layout).
Zth(j-a)/Rth(j-a)

Fig. 5: Junction capacitance versus reverse voltage applied (typical values).

1.0 0.8 0.6 0.4

600

C(pF)
F=1MHz Tj=25C
1N5820 1N5821 1N5822

= 0.5

100

= 0.2

0.2

= 0.1 Single pulse

tp(s) 1E+0 1E+1

=tp/T

tp

VR(V) 10 1 2 5 10 20 40

0.0 1E-1

1E+2

1E+3

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Fig. 6-1: Reverse leakage current versus reverse voltage applied (typical values) (1N5820/1N5821).
IR(mA)
1N5821 1N5820

Fig. 6-2: Reverse leakage current versus reverse voltage applied (typical values) (1N5822).
IR(mA)

1E+2 1E+1 1E+0 1E-1 1E-2 1E-3

5E+1 1E+1 1E+0 1E-1

Tj=25C

Tj=125C

Tj=125C

Tj=100C

Tj=100C

1E-2

Tj=25C

VR(V) 0 5 10 15 20 25 30
1E-3 0 5 10 15

VR(V)
20 25 30 35 40

Fig. 7-1: Forward voltage drop versus forward current (typical values) (1N5820/1N5821).
IFM(A)

Fig. 7-2: Forward voltage drop versus forward current (typical values) (1N5822).
IFM(A)

50.00 10.00

50.00 10.00

Tj=125C Tj=100C

Tj=125C

1.00

1.00

Tj=100C Tj=25C

Tj=25C

0.10 VFM(V) 0.01 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1

0.10

VFM(V)
0.01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

Fig. 8: Non repetitive surge peak forward current versus number of cycles.
IFSM(A) 100
F=50Hz Tj initial=25C

80 60 40 20 Number of cycles 0 1 10 100 1000

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PACKAGE MECHANICAL DATA DO-201AD plastic
B A B C

note 1

note 1

note 2

DIMENSIONS REF. Millimeters Min. A B C D E 25.40 5.30 1.30 1.25 Max. 9.50 1.000 0.209 0.051 0.049 2 - The minimum axial length within which the device may be placed with its leads bent at right angles is 0.59"(15 mm) Inches Min. Max. 0.374 1 - The lead diameter D is not controlled over zone E NOTES

Ordering type 1N582x 1N582xRL

Marking Part number cathode ring Part number cathode ring

Package DO-201AD DO-201AD

Weight 1.12g 1.12g

Base qty 600 1900

Delivery mode Ammopack Tape & reel

Epoxy meets UL94,V0

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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