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by TIP47/D

SEMICONDUCTOR TECHNICAL DATA

 
 
 
 

    

!  
. . . designed for line operated audio output amplifier, Switchmode power supply
drivers and other switching applications.

250 V to 400 V (Min) VCEO(sus)

1 A Rated Collector Current
Popular TO220 Plastic Package
MAXIMUM RATINGS
Rating

CollectorEmitter Voltage

Symbol

TIP47

TIP48

TIP49

TIP50

Unit

VCEO

250

300

350

400

Vdc

CollectorBase Voltage

VCB

350

400

450

500

Vdc

EmitterBase Voltage

VEB

5.0

Vdc

IC

1.0
2.0

Adc

Base Current

IB

0.6

Adc

Total Power Dissipation

@ TC = 25_C
Derate above 25_C

PD

40
0.32

Watts
W/_C

Total Power Dissipation

@ TA = 25_C
Derate above 25_C

PD

2.0
0.016

Watts
W/_C

20

mJ

TJ, Tstg

65 to + 150

_C

Collector Current Continuous

Peak

Unclamped Inducting Load

Energy (See Figure 8)

Operating and Storage Junction

Temperature Range

*Motorola Preferred Device

1.0 AMPERE
POWER TRANSISTORS
NPN SILICON
250 300 350 400 VOLTS
40 WATTS

CASE 221A06
TO220AB

THERMAL CHARACTERISTICS
Characteristic

Max

Unit

RJC

3.125

_C/W

Thermal Resistance, Junction to Ambient

RJA

62.5

_C/W

PD, POWER DISSIPATION (WATTS)

Symbol

Thermal Resistance, Junction to Case

TA
4

TC
40

30

20

10

TC

TA

20

40

60
100
120
80
TC, CASE TEMPERATURE (C)

140

160

Figure 1. Power Derating

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

Motorola, Inc. 1995

Motorola Bipolar Power Transistor Device Data

 
 
 
 

v
v
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic

Symbol

Min

Max

Unit

VCEO(sus)

250
300
350
400

Vdc

1.0
1.0
1.0
1.0

1.0
1.0
1.0
1.0

1.0

30
10

150

OFF CHARACTERISTICS

CollectorEmitter Sustaining Voltage (1)

(IC = 30 mAdc, IB = 0)

TIP47
TIP48
TIP49
TIP50

Collector Cutoff Current

(VCE = 150 Vdc, IB = 0)
(VCE = 200 Vdc, IB = 0)
(VCE = 250 Vdc, IB = 0)
(VCE = 300 Vdc, IB = 0)

TIP47
TIP48
TIP49
TIP50

ICEO

Collector Cutoff Current

(VCE = 350 Vdc, VBE = 0)
(VCE = 400 Vdc, VBE = 0)
(VCE = 450 Vdc, VBE = 0)
(VCE = 500 Vdc, VBE = 0)

TIP47
TIP48
TIP49
TIP50

mAdc

ICES

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

mAdc

IEBO

mAdc

ON CHARACTERISTICS (1)

DC Current Gain
(IC = 0.3 Adc, VCE = 10 Vdc)
(IC = 1.0 Adc, VCE = 10 Vdc)

hFE

CollectorEmitter Saturation Voltage

(IC = 1.0 Adc, IB = 0.2 Adc)

VCE(sat)

1.0

Vdc

BaseEmitter On Voltage
(IC = 1.0 Adc, VCE = 10 Vdc)

VBE(on)

1.5

Vdc

CurrentGain Bandwidth Product

(IC = 0.1 Adc, VCE = 10 Vdc, f = 2.0 MHz)

fT

10

MHz

SmallSignal Current Gain

(IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 kHz)

hfe

25

DYNAMIC CHARACTERISTICS

(1) Pulse Test: Pulse width

TURNON PULSE
APPROX
+11 V

300 s, Duty Cycle

VCC

2.0%.

1.0
RC

TJ = 25C
VCC = 200 V
IC/IB = 5.0

0.5
SCOPE

Vin
RB

t1
t3

APPROX
+11 V
Vin
t2

Cjd << Ceb

t1 7.0 ns
100 < t2 < 500 s
t3 < 15 ns
DUTY CYCLE 2.0%
APPROX 9.0 V

4.0 V

TURNOFF PULSE
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS.

Figure 2. Switching Time Equivalent Circuit

t, TIME ( s)

Vin 0
VEB(off)

tr

0.2
0.1

td
0.05

0.02
0.01
0.02

0.05

0.2
0.5
0.1
IC, COLLECTOR CURRENT (AMPS)

1.0

Figure 3. TurnOn Time

Motorola Bipolar Power Transistor Device Data

2.0

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

 
 
 
 
1.0
0.7
0.5

D = 0.5

0.3
0.2

0.2
0.1

0.1

0.02

0.03
0.02

0.01
SINGLE PULSE

0.01
0.01

0.02

0.05

P(pk)

ZJC(t) = r(t) RJC

RJC = 3.125C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) ZJC(t)

0.05

0.07
0.05

1.0

0.2

1.0

0.5

2.0
5.0
t, TIME (ms)

10

20

t1

t2

DUTY CYCLE, D = t1/t2

50

100

200

500

1.0 k

Figure 4. Thermal Response

IC, COLLECTOR CURRENT (AMPS)

5.0

TC 25C

2.0

There are two limitations on the power handling ability of a

transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 5 is based on T J(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T J(pk)
150 _ C. T J(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.

100 s

1.0
1.0 ms

0.5

500 s

dc

0.2

SECONDARY BREAKDOWN LIMITED

THERMALLY LIMITED @ 25C
BONDING WIRE LIMITED

0.1
0.05

CURVES APPLY
BELOW RATED VCEO

0.02

TIP47
TIP48
TIP49
TIP50

100
200
10
20
50
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)

5.0

500

Figure 5. Active Region Safe Operating Area

5.0

+ 4.5
V, TEMPERATURE COEFFICIENTS (mV/C)

ts
2.0

t, TIME ( s)

1.0
TJ = 25C
VCC = 200 V
IC/IB = 5.0

0.5
tf

0.2
0.1
0.05
0.02

0.05

0.1
0.2
0.5
IC, COLLECTOR CURRENT (AMPS)

Figure 6. TurnOff Time

Motorola Bipolar Power Transistor Device Data

1.0

2.0

+ 3.5

*APPLIES FOR IC/IB hFE/5

+ 2.5
+ 1.5
+ 0.5
0
0.5

+ 25C to + 150C

VC FOR VCE(sat)

55C to + 25C
+ 25C to + 150C

1.5
2.5
0.02

VB FOR VBE
55C to + 25C
0.05

0.1

0.2

0.5

1.0

2.0

IC, COLLECTOR CURRENT (AMPS)

Figure 7. Temperature Coefficients


 
 
 
 
tw 3 ms
(SEE NOTE A)

VCE MONITOR
0V

INPUT
VOLTAGE
MJE171
INPUT

RBB1 =
150

TUT

50
50
VBB1 = 10 V

RBB2 =
100
VBB2 =
0

5 V

100 mH

100 ms

VCC = 20 V
IC MONITOR

COLLECTOR
CURRENT

RS =
0.1

0.63 A
0V
VCER

COLLECTOR
VOLTAGE
10 V
VCE(sat)

Note A: Input pulse width is increased until ICM = 0.63 A.

Figure 8. Inductive Load Switching

200

1.4
VCE = 10 V

60
40
20

25C

55C

10
6.0
4.0
2.0
0.02

1.0
VBE(sat) @ IC/IB = 5.0 V
0.8
VBE(on) @ VCE = 4 V

0.6
0.4
0.2

0.4 0.6
0.04 0.06
0.1
0.2
IC, COLLECTOR CURRENT (AMPS)

Figure 9. DC Current Gain

1.2

TJ = 150C
V, VOLTAGE (VOLTS)

hFE, DC CURRENT GAIN

100

1.0

2.0

VCE(sat) @ IC/IB = 5.0 V

0
0.02

0.04 0.06

0.1

0.2

0.4 0.6

1.0

IC, COLLECTOR CURRENT (AMPS)

Figure 10. On Voltages

Motorola Bipolar Power Transistor Device Data

2.0


 
 
 
 
PACKAGE DIMENSIONS

T
B

SEATING
PLANE

F
T

DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z

Q
1 2 3

H
K
Z
L

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.

G
D
N

INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045

0.080

STYLE 1:
PIN 1.
2.
3.
4.

MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15

2.04

BASE
COLLECTOR
EMITTER
COLLECTOR

CASE 221A06
TO220AB
ISSUE Y

Motorola Bipolar Power Transistor Device Data


 
 
 
 

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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters can and do vary in different
applications. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. Motorola does
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Motorola Bipolar Power Transistor Device Data

*TIP47/D*

TIP47/D

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