F9223L F219

No
eco r
me m
df n
ne r
de w
n sig
No
eco r
me m
df n
ne r
de w
n sig
1.Application
This specifies M-Power:F9223L-F219 applied to multi-oscillated current resonant type power supply.
2.Block diagram
Q2 D G S
23 D2
G2 D G OUT ISNS GNDP GND S S1 GND Q1 D1,S2
VCC VREF COMP CS CB CON STB VW IC
This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd.
VCCP VCC VREF COMP CS CB CON STB VW
3.Pin disignation and function

Pin No. 4 (5) 7 8 (9) 10 11 12 13 14 15 16 19 (1)(2)(18) 20 23 (22) Symbol Function S1 MOSFET(Q1) source MOSFET(Q1) source current detection VCC Power supply GND Ground MOSFET(Q1) source current detection ground VREF Reference voltage output COMP Input feedback signal for constant voltage control CS Soft-start and soft-end oscillation CB Burst oscillation CON Reference oscillation of Q1 on-term STB Standby operarion signal input Alarm output for latched-shutdown VW Q1 turn-on and off timing detection D1,S2 Q1 drain and Q2 source
No
eco r
me m
df n
ne r
de w
n sig
G2 D2
Q2 gate Q2 drain
Note: * Pins 3,17,and21 is cut. * Pins 1,2,5,9,18,and22 no pin frames. * Pin 6 is disconnected. This pin is connectd to the Q1 gate but never connect it for waveform observation or any other purpose. Connection of the pin 6 could lead to major problems and could destroy the M-Power.
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4.Control IC Block diagram
No t eco r me m df n
DWG.NO.
ne r de w n sig
MS5F06456
.
4/24
H04-004-03a
5.Out view
Trade mark Type name
Lot. No
No t eco r me m df n
DWG.NO.
ne r de w n sig
MS5F06456
.
5/24
H04-004-03a
6.Absolute maximum ratings : Vcc=19V , Tc=Tj(IC)=Tch(Q1,Q2)=25 C

Section MOS-FET Item Drain-source voltage Continuous drain current Symbol Ratings MIN MAX -1.5 +500 -5.3 +5.3 -21.2 +21.2 -30 +30 35 -0.3 +28 Self Limiting 0 +10 1.0 20 -0.3 VREF -0.3 VREF -0.3 VREF -0.3 VREF -0.3 VREF -1.3 VCC -1.0 VREF 15 150 -20 +125 -20 +150 -20 +150 -40 +150 Units V A A V W V V mA W mA V V V V V V V kHz Remarks Q1 and Q2 Q1: 19-4 terminal Q2: 23-19 terminal 7-8terminal
VDS ID IDpulse Gate-source voltage VGS Maximum power dissipation PD Control IC Voltage VCC1 VCC2 Zener current IZ Max.power dissipation PDIC Output current at VREF IREF Voltage at CON VCON Voltage at CB VCB Voltage at CS VCS Voltage at COMP VCOMP Voltage at STB VSTB Voltage at VW VW Voltage at S1 VS Operating Frequency F Temperature Operating temperature Tc Junction temperature Tch Tj Storage temperature Tstg
10-8 terminal 14-8 terminal 13-8 terminal 12-8 terminal 11-8 terminal 15-8 terminal 16-8 terminal 4-8 terminal 16-8 terminal
Note : * The operating frequency in the absolute maximum rating is the operating frequency at normal operation.about the absolute maximum rating of operating frequency at standby operation, refer to the "Allowable frequency at standby operation curve" in 12/24 page. * VCC and VREF in maximum ratings mean that it is necessary to make the applied voltage lower than the voltage of VCC and a VREF terminal. For example , if the voltage will be applied to the terminal at no VREF voltage , it will be expected to latched shutdown.
No
eco r
me m
df n
ne r
de w
n sig
DWG.NO.
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7.Electrical characteristics : Vcc=19V , Tc=Tj(IC)=Tch(Q1,Q2)=25 C

Section Item Drain-source breakdown voltage Gate Threshold Voltage Zero gate voltage drain current Drain-source on-state resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol Test condition MIN MOS-FET B VDSS V GS(th) I DSS RDS(ON) Ciss Coss I D = 5 , G S =0V 2 0 AV I D = 5 , DS =V GS 2 0 AV V DS =500V,V G S =0V I D =2.5A,V G S =10V V DS =25V V G S =0V f=1MHz Vd=400V V G S =10V I D =2.5A R GS = 0 1 I F =10A,V GS =0V I F =I DR ,V GS =0V -dI F /t1 0 /s d= 0 A 500 3.5 15.5 7.9 6.8 9.1 0.73 24.0 0.9 7.5 28.0 4.7 6.5 420 2.7 3.5 8.4 40 0.70 79 83 0.63 0.54 0.61 0.65 0.85 2.75 100 0.65 0.45 0.83 0.07 70 1.2 125 Only Q1 or Q2 heating Q1 and Q2 heating Rating TYP MAX 4.0 0.40 1200 170 9 17.0 10.0 55.0 28.0 1.0 360 2.1 16.5 8.9 7.6 10.0 1.30 26.0 2.6 9.0 30.0 5.0 9.1 575 3.2 3.9 11.2 52 0.85 105 109 0.71 0.63 0.71 0.95 1.10 3.10 220 0.78 0.58 0.90 0.10 100 1.5 4.5 25 0.50 1.5 17.5 9.9 8.4 10.9 1.87 28.0 4.1 10.5 34.0 5.3 11.7 730 3.7 4.3 14.0 64 1.00 131 139 0.79 0.72 0.81 1.25 1.35 3.45 340 0.91 0.71 0.97 0.13 130 1.8 Units Remarks
V V A pF pF pF ns ns ns ns V ns C V V V V V V V mA V V mA A V V mA A V A A V V V mA V V V V V s s V
Q1: 19-4 terminal Q2: 23-19 terminal
Crss td(on) Turn-On Time tr td(off) Turn-Off Time tf Diode Forward On-Voltage V SD Reverse Recovery Time trr Reverse Recovery Charge Qrr Control Start threshold voltage V CC(O N) IC Stop threshold voltage V CCL(OFF) power Hysteresis V CCH Cancellation voltage of supply burst operation V CCB Hysteresis V CCBH Over voltage threshold voltage V CCH(OFF) Latch-stop cancellation voltage V CC(LA) Operating current I CC Zener voltage VZ Reference voltage V REF CON oscillation Discharge current I ON(DIS) Charge current I ON(CHG) Amplitude of CON voltage V ONLH Maximum voltage V ON(MAX) CB oscillation Discharge current I B(DIS) Charge current I B(CHG) Amplitude of CB voltage V BLH CS oscillation Discharge current I S(DIS) Charge current I S(CHG) Start threshold voltage of Q1 switching V B2H Stop threshold voltage of Q1 switching V B2L Feedback (COMP) Stop voltage V COMP Source current I COMP Standby(STB) Standby threshold voltage V STBON voltage V STBOFF Internal resistance at latched-shutdown R STB Timing Q1 turn-on threshold detection(VW ) voltage VWH voltage VWL Over current operating Over current voltage V OC Operating time to Latchedprotection shutdown td LA Reset time td LAR Short-circuit current limiting voltage V SC Overheating protection Operating temperature TjOH Switching Rise time tr characteristics Fall time tf Thermal Channel to case Rth (ch-c) resistance Channel to ambient Rth (ch-a)
7-8 terminal
=V CC(ON)-V CCL(OFF)
=V CCB -V CCL(O FF)
F=75kHz I CC =10mA
No
tr
com e
en m
fo
ne r
de w
n sig
10-8 terminal 14-8 terminal
13-8 terminal
12-8 terminal
11-8 terminal 15-8 terminal
16-8 terminal
4-8 terminal
150 0.15 s only Q1 0.35 s 19-8 terminal 3.5 /W Q1 and Q2 84 /W
Note: Capacitor of 2000pF or more should be connected between CON and GND terminals.
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8.Characteristics Diagram : Vcc=19V,Tc=Tj(IC)=Tch(Q1,Q2)=25 C,F=75kHz

[MOS-FET] Allowable Power Dissipation
50 40 30 20
t
Safe operating area Tc=25 D=0.01

100
10
PD[W]
ID[A]
t1 s = 1 0 10 0 1m s
0.1
10
T
D=
t T
0 0 25 50 75 100 125 150
0.01 1 10 100 1000
Tch[]
VDS[V]
Output Characteristics
35 30 25
Transfer Characteristics
100
VDS=25V
V GS=20V 10V 7V
10
ID[A]
ID[A]
20 15 10 5 0 0 5
6.5V
6V 5.5V 5V
VDS[V] co e tr Transconductance No
10 15 20
me 30 m25
VDS=25V
fo d 0.01 n
0.1
ne r
0 1
de w
2 3 4
n sig
10
VGS[V]
Drain-Source on-state Resistance

5 =5V 4.5 4 3.5 3 2.5 2 1.5 1 0.5
7V 10V 20V VGS 5.5V 6V 6.5V
100
10
RDS o ) (n[ ]
gfs[S]
0.1 0.1 1 10 100
0 0 5 10 15 20 25 30 35
ID[A]
DWG.NO.
ID[A]
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Drain-Source on-state Resistance

1.6 1.4 1.2
ID=2.5A VGS=10V
Gate Threshold Voltage vs Tch

6 5.5 5
I= 5 D 20A VDS=VGS
RDS o ) (n[ ]
VGS(th)[V]
1 0.8 0.6 0.4 0.2 0 -25 0 25 50 75 100 125 150

typ. max.
4.5 4 3.5
max.
min.
3 2.5 2 -25 0 25 50 75 100 125 150
Tch[]
Tch[]
Gate Charge Characteristics

Capacitance
10000
VGS=0V f=1MHz
25
ID=5A Vdd=250V
20 15 10 5 0 0 10 20 30 40 50
1000
Ciss
VGS[V]
C[pF]
100
10
Qg[nC]
Forward Characteristics of Reverse Diode

100
VGS=0V
ot
com re
me
60
df n
70
o 0.1
1 10
ne r
de w
1
n sig
10
Coss
Crss
100
1000
VDS[V]
Transient Thermal Impedance

D=0
10
Zth(ch-c)[k/W]
IF[A]
0.1
0.1
0.01
0.01 0 0.5 1 1.5
0.001
1E-06 1E-05 1E-04 0.001 0.01 0.1 1 10
VSD[V]
t[sec]
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[IC]
Vcc-Icc : normal operation
15
Vcc-Icc : normal operation

10 8
10
Icc[mA]
stop
Icc[uA]
6 4 2
stop
start
start
0 0 5 10 15 20 25 30
0 0 5 10 15 20
Vcc[V]
Vcc[V]
15
Vcc-Icc : normal operation latched shutdown

Latched at VccH(OFF) Zener clump
100 80
Vcc-Icc : normal operation latched shutdown
I [A c ] c
10
Icc[mA]
60 40 20
start
5
stop
0 0
15
o d f0 0 5 10 15 20 25 n e30 Vcc[V] m om Vcc-Icc : standby operation rec t 10 No

8
ne r
de w
5
Latch operation current
n sig
10
.
start
15
20
Vcc[V]
Vcc-Icc : standby operation
10
VccB
Icc[uA]
6 4 2 0 0 5 10 15 20 25 30 0 5 10 15 20
stop start
Icc[mA]
5
stop start
Vcc[V]
DWG.NO.
Vcc[V]
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H04-004-03a
15
Vcc-Icc : standby operation latched shutdown

Zener clump
100 80
Vcc-Icc : standby operation latched shutdown
I [A c ] c
10
Icc[mA]
Latched at VccH(OFF)
60 40
Latch operation current start
5
stop
20
start
0 0 5 10 15 20 25 30
0 0 5 10 15 20
Vcc[V]
Vcc[V]
F-Icc
20 15
Burst duty-Icc
15
Icc[mA]
Icc[mA]
normal operation
10
10
5 5
standby operation
0 0 50 100
F[kHz]
12 10 8
No
Tc=Tj=TCH-Icc
e tr
com
f 150 d en m
0 o
ne r
0
de w
40
n sig
60
20
80
100
duty[%]
Tj=Tc=Tch-Vcc
30
VccH(OFF)
normal operation at F=75kHz
20
Icc[mA]
6 4 2 0 -25 25 75 125
standby operationat at F=75kHz,burst duty =20%
Vcc[V]
Vcc(ON)
10
VccB VccL(OFF)
0 -25
Vcc(LA)
25
50
75
100
125
Tc=Tj=TCH[]
Tj=Tc=Tch[]
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11/24
H04-004-03a
Allowable Power Dissipation

1.2 1.0 0.8
350 300 250
Allowable frequency at standby operation
F [kHz]
PD[W]
200 150 100 50 0
0.6 0.4 0.2 0.0 0 25 50 75 100 125 150
20
40
60
80
100
Tj[]
Burst duty [%]
Vcc-VREF
Tc=Tj=TCH-VREF
5.25 5.20 5.15 5.10
5.25 5.20 5.15 5.10
VREF[V]
5.05 5.00 4.95 4.90 4.85 4.80 4.75 10 15 20 25
VREF[V]
5.05 5.00 4.95 4.90 4.85 4.80 4.75
Vcc[V]
50 40
ot
CON-tON
com re
me
df n
ne0 r -25
de w
25
n sig
50
.
100 125
75
Tc=Tj=TCH[]
Tc=Tj=TCH-tON
at CON=3300pF
22 21
t [s ON ]
30 20 10 0 2000
t N ] O [s
20 19 18 17 16
3000
4000
5000
6000
7000
-25
25
50
75
100
125
CON[pF]
Tc=Tj=TCH[]
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CB-FB
1000 450
Tc=Tj=TCH-FB
a C = .5 F t B 01
100
FB[Hz]
FB[Hz]
10 1 0 1 10 100
400
350 -25 0 25 50 75 100 125
C [F B ]
Tc=Tj=TCH[]
CS-dV/dt
Tc=Tj=TCH-dV/dt
4
100.0
a C = .4 t S 00 7 F
dV/dt[V/ms]
dV/dt[V/ms]
10.0
+dV/dt
2
1.0
0.1 0.001
0.010
0.100
C [F S ]
VCOMP-ICOMP
1.0 0.8
t No
com re
en m
1.000
o df
ne0 r -25
de w
25
n sig
50
-dV/dt
75
100
125
Tc=Tj=TCH[]
Tc=Tj=TCH-VCOMP
1.0 0.8
ICOMP[mA]
VCOMP[V]
0.6 0.4 0.2 0.0 0.0 1.0 2.0 3.0 4.0 5.0
0.6 0.4 0.2 0.0 -25 0 25 50 75 100 125
VCOMP[V]
Tc=Tj=TCH[]
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VCS-VCON
4.0 4.0
VCOMP-VCON
3.0
3.0
VCON[V]
2.0
VCON[V]
0.0 1.0 2.0 3.0 4.0
2.0
1.0
1.0
0.0
0.0 0.0 1.0 2.0 3.0 4.0
VCS[V]
VCMP[V]
Tc=Tj=TCH-VSTB
Tc=Tj=TCH-RSTB
500
3.5 3.0 2.5

VSTBOFF
400
RSTB[]
VSTB[V]
2.0 1.5 1.0 0.5 0.0 -25 0 25 50 75

VSTBON
300 200 100
Tc=Tj=TCH[]
0.9 0.8 0.7 0.6
Tc=Tj=TCH-VW
2.0
ot
eco r
VWH
me m
100
df n
125
o -25
0
ne r
de w
25
n sig
50
75
100
125
Tc=Tj=TCH[]
Tc=Tj=TCH-VOC,VSC
1.5
VOC<VSC[V]
VSC
VW[V]
1.0
VOC
VWL
0.5 0.4 -25 0 25 50 75 100 125
0.5
0.0 -25 0 25 50 75 100 125
Tc=Tj=TCH[]
Tc=Tj=TCH[]
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tdLA[s]
0.08 -25 0 25 0.09 0.10 0.11 0.12
No
Tc=Tj=TCH[]
Tc=Tj=TCH-tdLA
t
50
eco r
75 100
me m df n
125
t ,1 ] r t [s 1f
0.0 0.1 0.2 0.3 0.4 0.5 -25
DWG.NO.
ne r de w n sig
0 25 50
tf1
MS5F06456
.
75
tr1
Tc=Tj=TCH-tr1,tf1(Q1)
Tc=Tj=TCH[]
15/24
100 125
H04-004-03a
9. Description
Item V DSS V GS(th)(Q2) IDSS R DS(ON)(Q1) R DS(ON)(Q2) V SD V CC(ON) V CCL(OFF) V CCH V CCB V CCBH V CCH(OFF) V CC(LA) ICC VZ V REF ION(DIS) ION(CHG) V ONLH V ON(MAX) IB(DIS) IB(CHG) V BLH IS(DIS) IS(CHG) V B2H V B2L V COMP ICOMP V STBON V STBOFF R STB VW H VW L V OC tdLA tdLAR V SC tr tf tON C ON FB CB dV/dt CS Tc Tj T CH F
Test circuit Fig.1 Fig.2 Fig.3 Fig.4 Fig.5 Fig.6 Fig.7 Fig.7 Fig.8 Fig.8 Fig.8 Fig.8 Fig.7 Fig.7 Fig.8 Fig.8 Fig.8 Fig.8 Fig.8 Fig.8 Fig.8 Fig.8 Fig.8 Fig.8 Fig.8 Fig.8 Fig.8 Fig.9 Fig.9 Fig.10 Fig.11 Fig.11 Fig.12 Fig.12 Fig.12 Fig.12 Fig.8 Fig.8 -
description VCC=VGS =0V,I D= 5 20A ID= 5 ,GS =VDS 2 0 AV VCC=VGS =0V,V DS=500V VCC=VGS =19V,I D=2.5A VGS=10V,I D=2.5A IF=10A,VCC=VGS=0V Vcc voltage to output VREF after Vcc's going up from 0V. Vcc voltage to stop outputting VREF after Vcc's going down from V CC(ON). =VCC(ON)V CCL(OFF) Vcc voltage to cancel standby operation after Vcc's going down at standby operation(STB=L). =VCCB V CCL(OFF) Vcc voltage to latching shutdown after Vcc's going up from V CC(ON). Vcc voltage to cancel latching shutdown operation. Vcc=19V,Vcc terminal current at 75kHz operation. Vcc voltage at Icc=10mA. Reference output voltage. Sink current at CON terminal. Source current at CON terminal. The amplitude voltage at CON terminal. Threshold voltage at H level of V ONLH . Sink current at CB terminal. Source current at CB terminal. The amplitude voltage at CB terminal. Sink current at CS terminal. Source current at CS terminal. Start threshold voltage of Q1 switching. Stop threshold voltage of Q1 switching. Stop threshold voltage of Q1 switching. Source current at COMP terminal.
Standby threshold voltage after V STB 's going down from V STBOFF. Standby cancellation voltage after V STB 's going up from VSTBON. Internal resistance at latched-shutdown. Q1 turn-on threshold voltage after Vw's going up. Q1 turn-off threshold voltage after Vw's going down. S1 terminal voltage of over current with latched shuddown.(0.1 second timer) In continuously abnormal state, time until latching shutdown. In uncontinuously abnormal state, time to cancel latching shutdown timer. S1 terminal voltage of short circuit current with latched shutdown.(1 time) Rise time of MOS-FET(Q1). Fall time of MOS-FET(Q1). Maximum ON width of MOS-FET(Q1). The capacitance which is connected between CON and GND. Burst frequency at standby operation. The capacitance which is connected between CB and GND. dV/dt of CS terminal voltage. The capacitance which is connected between CS and GND. Case temperature.(back side of pakage) Junction temperature of control IC. Channel temperature of MOS-FET(Q1 and Q2). Switching frequency of Q1.
t No
eco r
me m
df n
ne r
de w
n sig
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[Q1]
23 D2 23 D2
[Q2]
[Q2]
1mA
23 D2
VCC VREF COMP CS CB CON STB VW
G2 D1,S2 S1 GND
D1,S2 1mA
V
G2 D1,S2 S1 GND
1mA
V
VDSS Fig.1 VDSS

VGS(th) Fig.2 VGS(th)
[Q1]
[Q1]
23 D2 23 D2
[Q2]
A
G2 D1,S2 S1 GND
D1,S2
A
No
me IDSS com e Fig.3 t r IDSS

23 D
df n
ne r
23 D2
G2 D1,S2
sig de S1
GND
n.
ID
V
RDS(ON):Q1 Fig.4 RDS(ON):Q1

[Q1] [Q2]
23 D2 23 D2
ID
V
G D1,S S GND
G2 D1,S2 S1 GND
V
D1,S2 IF
IF V
RDS(ON):Q2 Fig.5 RDS(ON):Q2

DWG.NO.
VSD Fig.6 VSD
MS5F06456
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VREF
23 D2
G2 D1,S2 S1 GND
23 D
G D1,S S V DS GND
VCC(ON), Fig.7 VCC(ON),etc...

23 D
VCCB, Fig.8 VCCB,etc...

23 D
A
G D1,S S GND V DS
2.7mA V
G D1,S S GND
VSTB Fig.9 VSTB

A
23 D
ot
eco r
D1,S S
me m
GND
df n
ne r
de w
RSTB Fig.10 RSTB
n sig
V DS
VW Fig.11 VW
VCC VREF COMP CS CB CON STB VW V
23 D
G D1,S S V DS GND
VOC, Fig.12 VOC,etc...

DWG.NO.
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10. Reliability test items

All guaranteed values are under the categories of reliability per non-assembled.
Test Test No. Items 1 Terminal Strength (Tensile) 2 Terminal Strength (Bending) 3 Mounting Strength 4 Vibration Testing methods and Conditions Reference Sampling Acceptance Standard number number EIAJ ED4701 A-111A method 1 5 A-111A method 3 A-112 method 3
Pull force : 10N Force maintaining duration :101sec Load force : 5N Number of times :2times(90deg./time) Pressure-bonding force : 80N
Mechanical test methods
(0:1)
5
5 Shock
frequency : 100Hz to 2kHz 2 Acceleration : 200m/s Sweeping time : 4min./1 cycle 4cycles for each X,Y&Z directions. 2 Peak amplitude: 15km/s Duration time : 0.5ms 3times for each X,Y&Z directions.
A-121A
15
A-122A test code D
15
6 Solderability
Solder temp. : 245 C 5 Immersion time : 5 0.5sec

Each terminal shall be immersed in the solder bath within 1 to 1.5mm from the body.
A-131A test code A
15
5 7 Resistance to Solder temp. : 260 C 1sec Soldering Heat Immersion time : 10 Number of times : 1time
1 High Temp. Storage 2 Low Temp. Storage 3 Temperature Humidity Storage 4 Temperature Humidity BIAS Temperature : 150+5/-5C Test duration : 1000hr Temperature : -40+5/-5C Test duration : 1000hr Temperature : 852C Relative humidity : 855% Test duration : 1000hr Temperature : 852C Relative humidity : 855% Bias Voltage : VDS(max) * 0.8,VCC=24V, VCOMP=0V Test duration : 1000hr Temperature : 1302C Relative humidity : 855% Vapor pressure : 230kPa Test duration : 96hr
A-132
Climatic test methods
t No
com re
en m
fo
ne r B-112A
B-111A
de w
. gn15 si
22 22
B-121A test code C
22
B-122A test code C
22
5 Unsaturated Pressurized Vapor 6 Temperature Cycle
(0:1)
B-123A test code C 22
High temp.side : 150 C 5 Low temp.side : -40 C 5
Duration time : HT 30min,LT 30min Number of cycles : 100cycles 7 Thermal Shock Fluid : pure water(running water)
B-131A test code A
22
High temp.side : 100+0/-5 C Low temp.side : 0+5/-0 C

Duration time : HT 5min,LT 5min Number of cycles : 10cycles
B-141A test code A
22
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Test Test No. Items 1 Intermittent Operating Life
Testing methods and Conditions
Reference Sampling Acceptance Standard number number EIAJ ED4701 D-322 22
Ta=25 C 5 Tc=90degree Tch Tch(max.) Test duration : 3000 cycle 2 HTRB Temperature : 150+0/-15C (Drain-Source) Bias Voltage : VDS=VDS(max)*0.8, VCC=VCC(max),VCOMP=0V Test duration : 1000hr
Endurance test methods
(0:1)
D-323
22
Failure Criteria Failure Criteria Item Symbol Lower Limit Upper Limit Unit Drain-source breakdown voltage BVDSS L0.8 V Zero gate voltage drain current IDSS U2 A Drain-source on-state resistance RDS(ON) U1.2 Diode forward on-voltage VSD U1.2 V Start threshold voltage Vcc(ON) L0.9 U1.1 V Stop threshold voltage VccL(OFF) L0.9 U1.1 V Hysteresis VccH L0.9 U1.1 V Cancellation voltage of burst operationVccB L0.9 U1.1 V Hysteresis VccBH L0.9 U1.1 V Over voltage threshold voltage VccH(OFF) L0.9 U1.1 V Operating current ICC L0.8 U1.2 mA Reference voltage VREF L0.9 U1.1 V Charge current ION(CHG) L0.8 U1.2 mA Charge current IB(CHG) L0.8 U1.2 mA Charge current IS(CHG) L0.8 U1.2 mA Over current operating voltage VOC L0.9 U1.1 V Stop voltage Vcomp L0.9 U1.1 V Standby threshold voltage VSTBON L0.9 U1.1 V Q1 turn-on threshold voltage VWH L0.9 U1.1 V * LSL : Lower Specification Limit * USL : Upper Specification Limit
Electrical Characteristics
ot Nany of electrical characteristics measure, all testing related to the humidity * Before
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have conducted after drying the package surface for more than an hour at 150C.
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11. Cautions Although Fuji Electric is continually improving product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing physical injury, fire, or other problem in case any of the products fail. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. The products described in this Specification are intended for use in the following electronic and electrical equipment which has normal reliability requirements. Computers OA equipment Communications equipment(Terminal devices) Machine tools AV equipment Measurement equipment Personal equipment Industrial robots Electrical home appliances etc. The products described in this Specification are not designed or manufactured to be used in equipment or systems used under life-threatening situations. If you are considering using these products in the equipment listed below, first check the system construction and required reliability, and take adequate safety measures such as a backup system to prevent the equipment from malfunctioning. Backbone network equipment Transportation equipment (automobiles, trains, ships, etc.) Traffic-signal control equipment Gas alarms, leakage gas auto breakers Submarine repeater equipment Burglar alarms, fire alarms, emergency equipment Medical equipment Nuclear control equipment etc. Do not use the products in this Specification for equipment requiring strict reliability such as(but not limited to): Aerospace equipment Aeronautical equipment 12. Warnings
fo d absolute maximum rating(voltage, current, The MOSFETs should be used in products within their en temperature, etc.). m The MOSFETs may be destroyed ifm beyond the rating. o used We only guarantee the non-repetitive and repetitive Avalanche capability and not for the continuous rec t Avalanche capability which can be assumed as abnormal condition .Please note the device may be No destructed from the Avalanche over the specified maximum rating.
The equipment containing MOSFETs should have adequate fuses or circuit breakers to prevent the equipment from causing secondary destruction (ex. fire, explosion etc). Use the MOSFETs within their reliability and lifetime under certain environments or conditions. The MOSFETs may fail before the target lifetime of your products if used under certain reliability conditions. Be careful when handling MOSFETs for ESD damage. (It is an important consideration.) Whn adn M S E shlt mb t cs ( caead ooc t l d ade i l e hnlg O F T,o h i d e yh aep kg)n dn t hh e s n tmn s e a tu e a r a. It is recommended that any handling of MOSFETs is done on grounded electrically conductive floor and tablemats.
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Before touching a MOSFET terminal, Discharge any static electricity from your body and clothes by grounding out through a high impedance resistor (about 1M ) When soldering, in order to protect the MOSFETs from static electricity, ground the soldering iron or soldering bath through a low impedance resistor. You must design the MOSFETs to be operated within the specified maximum ratings(voltage, current, temperature, etc.) to prevent possible failure or destruction of devices. Consider the possible temperature rise not only for the channel and case, but also for the outer leads. Do not directly touch the leads or package of the MOSFETs while power is supplied or during operation in order to avoid electric shock and burns. The MOSFETs are made of incombustible material. However, if a MOSFET fails, it may emit smoke or flame. Also, operating the MOSFETs near any flammable place or material may cause the MOSFETs to emit smoke or flame in case the MOSFETs become even hotter during operation. Design the arrangement to prevent the spread of fire. The MOSFETs should not used in an environment in the presence of acid, organic matter, or corrosive gas(hydrogen sulfide, sulfurous acid gas etc.) The MOSFETs should not used in an irradiated environment since they are not radiation-proof. During open short test, the internal of the MOSFETs might explode instantaneously and the resin mold package might be blown off when high voltage is applied to the low voltage terminals. Make sure in your design that during open short test, high voltage will not be applied to the low voltage terminals. To avoid accidents and explosion damage if high voltage is applied, use fuses in your design.
n. gavoid device Soldering involves temperatures which exceed the device storage temperature rating. To si eassurance standard. damage and to ensure reliability, observe the following guidelines from the quality wd ne Soldering methods for d Solder temperature and duration en Package type Methods mm odipping Soldering Temp. & Time Note Solder c A re 2605, 101sec Through hole t Soldering iron o Solder dipping package N B 35010, 3.50.5sec
Installation Soldering iron The immersion depth of the lead should basically be up to the lead stopper and the distance should be a maximum of 1.5mm from the device. When flow-soldering, be careful to avoid immersing the package in the solder bath. Refer to the following the pressure-bonding force reference when mounting the device on a heat sink. Excess pressure-bonding force causes damage to the device and weak pressure-bonding force will increase the thermal resistance, both of which conditions may destroy the device. Table 1: Recommended pressure-bonding force Package style Recommended pressure-bonding force SIP23 30 N 80
Note
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T e eti solhv alns wtn3 adogns wtn 0m A oke t th n g h has k hu ae ft s ii 0 m n r hes ii1 .l ,eph i t i n d ae h u h s eg e n torque within the limits of this specification. Improper handling may cause isolation breakdown leading to a critical accident. ex.) Over plane off the edges of screw hole. (Recommended plane off the edge is C<1.0mm) We recommend the use of thermal compound to optimize the efficiency of heat radiation. It is important to evenly apply the compound and to eliminate any air voids. We do not recommend to re-use the device once after solder is removed and detached from the board. The detached device may not withstand the thermal when solder is removed, or damage by mechanical force. Storage The MOSFETs must be stored at a standard temperature of 5 to 35 and relative humidity of 45 to 75%. If the storage area is very dry, a humidifier may be required. In such a case, use only deionized water or boiled water, since the chlorine in tap water may corrode the leads. The MOSFETs should not be subjected to rapid changes in temperature to avoid condensation on the surface of the MOSFETs. Therefore store the MOSFETs in a place where the temperature is steady. The MOSFETs should not be stored on top of each other, since this may cause excessive external force on the case. The MOSFETs should be stored with the lead terminals remaining unprocessed. Rust may cause presoldered connections to fail during later processing. The MOSFETs should be stored in antistatic containers or shipping bags. Under the above storage condition, use the MOSFETs within one year. 13. Compliance with pertaining to restricted substances 13-1) Compliance with the RoHS Regulations and Exemptions
This product will be fully compliant with the RoHS directive. Five out of six substances below which are regulated by the RoHS directive in Europe are not included in this product. The exception is only lead.
me following relates to this product : The RoHS directive has some exemptions. The com Lead in high melting temperature type solders (Sn-Pb solder alloy which contains more than 85%) e tr o This productN is used to the high melting temperature type solders (Sn-Pb solders) for die-bonding.
Moreover, the terminals used lead-free solder. * The six substances regulated by the RoHS Directive are: Lead, Mercury, Hexavalent chromium, Cadmium, PBB (polybrominated biphenyls), PBDE (polybrominated diphenyl ethers).
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13-2) Compliance with the calss-1 ODS and class-2 ODS. (ODS: Ozone-Depleting Substances) This products does not contain and used t wcne i t Po co ot O oe ae h L ocrn h retn f e zn Lyr e a ng e t i h throughh C nooS ei d us ne ad t r esr ( P N n the Montreal Protocol. t otlf pci S bt cs n Oh M au sJ A )ad e r f e a e e A ,
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If you have any questions about any part of this Specification, please contact Fuji Electric or its sales agent before using the product. Neither Fuji nor its agents shall be held liable for any injury caused by using the products not in accordance with the instructions. The application examples described in this specification are merely typical uses of Fuji Electric products. This specification does not confer any industrial property rights or other rights, nor constitute a license for such rights.
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F9223L F219

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G2 D G OUT ISNS GNDP GND S S1 GND Q1 D1,S2

VCC VREF COMP CS CB CON STB VW IC

VCCP VCC VREF COMP CS CB CON STB VW

3.Pin disignation and function

4.Control IC Block diagram

Trade mark Type name

6.Absolute maximum ratings : Vcc=19V , Tc=Tj(IC)=Tch(Q1,Q2)=25 C

7.Electrical characteristics : Vcc=19V , Tc=Tj(IC)=Tch(Q1,Q2)=25 C

Q1: 19-4 terminal Q2: 23-19 terminal

=V CCB -V CCL(O FF)

10-8 terminal 14-8 terminal

11-8 terminal 15-8 terminal

150 0.15 s only Q1 0.35 s 19-8 terminal 3.5 /W Q1 and Q2 84 /W

8.Characteristics Diagram : Vcc=19V,Tc=Tj(IC)=Tch(Q1,Q2)=25 C,F=75kHz

Safe operating area Tc=25 D=0.01

0 0 25 50 75 100 125 150

0.01 1 10 100 1000

Drain-Source on-state Resistance

0.1 0.1 1 10 100

Drain-Source on-state Resistance

Gate Threshold Voltage vs Tch

1 0.8 0.6 0.4 0.2 0 -25 0 25 50 75 100 125 150

3 2.5 2 -25 0 25 50 75 100 125 150

Gate Charge Characteristics

Forward Characteristics of Reverse Diode

Transient Thermal Impedance

0.01 0 0.5 1 1.5

Vcc-Icc : normal operation

Vcc-Icc : normal operation latched shutdown

Vcc-Icc : normal operation latched shutdown

o d f0 0 5 10 15 20 25 n e30 Vcc[V] m om Vcc-Icc : standby operation rec t 10 No

Latch operation current

Vcc-Icc : standby operation

Vcc-Icc : standby operation latched shutdown

Vcc-Icc : standby operation latched shutdown

normal operation at F=75kHz

Allowable Power Dissipation

Allowable frequency at standby operation

200 150 100 50 0

0.6 0.4 0.2 0.0 0 25 50 75 100 125 150

Burst duty [%]

5.25 5.20 5.15 5.10

5.05 5.00 4.95 4.90 4.85 4.80 4.75 10 15 20 25

5.05 5.00 4.95 4.90 4.85 4.80 4.75

350 -25 0 25 50 75 100 125

0.6 0.4 0.2 0.0 -25 0 25 50 75 100 125

0.0 0.0 1.0 2.0 3.0 4.0

3.5 3.0 2.5

2.0 1.5 1.0 0.5 0.0 -25 0 25 50 75

300 200 100

0.9 0.8 0.7 0.6

0.5 0.4 -25 0 25 50 75 100 125

0.0 -25 0 25 50 75 100 125

VCC VREF COMP CS CB CON STB VW

VCC VREF COMP CS CB CON STB VW

VDSS Fig.1 VDSS

VGS(th) Fig.2 VGS(th)

VCC VREF COMP CS CB CON STB VW

me IDSS com e Fig.3 t r IDSS

VCC VREF COMP CS CB CON STB VW

RDS(ON):Q1 Fig.4 RDS(ON):Q1