-

Con.

S-;.-~i?AY) .3 ~)~)ec.-t~niCb le\;",ce,6.5452-08. ~

-

tX-r&."

AU.l'Lt.lL~ ~> (4)J'1C9-B RC-8774 '=:t

~

(REVISED COURSE) (3 Hours) [Total Marks: 100

N.B. : (1) Question Nos. 1 and 2 are compulsory. (2) Solve any three questions from remaining. (3) Assume suitable additional data wherever necessary. 1. Design single stage R-C coupled CE amplifier using BJTto meet the following" 20 specifications. IA" I > 150. SIca < 10. FL = 20 Hz. Va = 5 V RMS Vcc = 18 V h. "= 2.7 K h fe = 220 h ae ,h re ma y be ne g lected. Ie
Calcula,te A" , Ri' Ra of the amplifier you have designed.

2. (a) Design an Re coupled CS amplifier using FET BW -11 to meet the following 15 specification. IA" I > 15 IDSQ 1.2 mAFL < 20 Hz.Va = 2.5VRi > 1 M ohm. =

r-

(b) A certain JFET has IDss = 15 mA and pinch off voltage Vp

Calculate value of transconductance for V GS=

=-

5 V. 5

2 V. 15

3. (a) For full wave rectifier with center tapped transformer (20-0-20 rms, 50 Hz), Rl =10 Q. (i) Find Vdc' Ide and ripple factor (ii) Repeat part 1 if 10.000 ~F is considered and is shunted across the load (b) (iii) Repeat part 1 if 100 m h inductor is present in series with load. Draw UJT equivalent circuit and explain UJT characteristic curve.

4. (a)
~

Determine

RCI ReI RbI Vce and

1
".L

Vb, V

10

1} 2. m f.t
f2e.
(4b V 13 :=. g CJ 2.,4\1

~p

f. e..

(b) (i) Show that in self bias circuit, the drift of quiescent to temperature changes is made up automatically. (ii) Compare Triac with Diac.
5. (a) (b) Explain various methods series of biasing regulator JFET and MOSFET. circuit using BJT.

point due

10

15 5

Draw and explain

[TURN OVER

"'.

.~

Con. 54~2-RC-8774-08.

6. (a)

Find the quiescent I = - 4 mA V

dss P

= 4V

values

of Vds' Id and Vgs for the amplifier

shown.

10

-0 b 0 V R,
.J

\.;",.0.

1<6K-L

\(s

'-I K-fL.

(b) (i) (ii) Explain supply. line regulation and ripple rejection for regulated power If
r"\

10

A particular optocoupler has current transfer ratio of 30 percent. input current is lOO mA, What is cutput current?

7. (a) Describe four ways an 5C5 can be turned off. (b) Compare methods of biasing BJT. What is L section filter? (c) What is critical inductance? (d) Explain D-M05FET Amplifier operation. 5

20

", -~

DBEC DATA SHEET

, Dera'te.

'ransislor lype :N3055 CN055 XNI49

Icmax @ 25C @ 25C Walls' Amps

Pdmax

VC (..1)
VOIIS

vOllS

Vcso

d.c. 1.1 1.0 1.0

d.c.
100 60 50

Vco VCER (SIlS) (Sus) volts d.c. VOllSd.c. 60 50 40 70 55

VCEX

VOIIS

Vso' VOIIS

D.C. T. max 1oC 200 200 min 20 25

current lyp. 50 50

gain max. 70 100

Small min. 15 25

Signal typo 50 75

hi' max. 120 125

VSI; max.

0,. C/W

d.c. 90 60

d.c. 7 5

above 2SOC W/oC 0.7 0-4

XNIOO 1C147A NS2S(PNP ) rJC147B

115.5 50.0 30.0 5..Q

15.0 5.0 4.0

1.8 1.5

\.5 3.5

0.25 0.225 ().25

hie 2.7 K 0 1.4 K 0 4.5 K 0

i(H

0.6 0.25 .5 '0.25 -0.1 0.25

hre

0'.7

70 50 85 50

60 4S 30 45

65 SO

8 6 6 6

ISO 200 12S

30 50 115

50 90 180

100
125

3S
200

\10 280 220

33 50 125

65
450

60 ,90 220

liS 280 260

45
330

1.2 0.9 0.9

4.0 35

0.3

50

290

240

500

0.9

Transistor lype BC 147A 2N 525 (PNP) BC 147B

hoe 18J,lU 2SJ,lU 30J,l U

oja 0.4C/mw -0.4C/mw

BFW II-JFET -VGS volts IDS ,max. mA

IDStypo mA

MUTUAL CHARACTERISTICS 0.0 10 7.0 4.0 0.2 9.0 6.0 3.0 0.4 8.3 5.4 2.2 0.6 7.6 4.6 1.6 0.8 6.8 4.0 1.0 1.0 6.1 3.3 0.5 1.2 5.4 2.7 0.0 1.6 4.2 1.7 0.0 2.0 2-4 3.1 . 2.2 0.8 0.2 0.0 0.0 2.5 2.0 0.0 0.0 3.0 1.1 0.0 0.0 3.5 0.5 0.0 0.0 4.0 0.0 0.0 0.0

1.5 X 10-4 3.2 x 10"" 2 x I0-4

IDSmin. mA N-Channel Type 2N3822 BFW 11 (typical) JFET

vos max. VOIIS VDCmax. Vcs max. P max.

Volts SO 30

VOlls 50 30

TJ max.

IDSS

g",..

-v,. VOIIS

rtl

Derale

8. Itl 0.59C/mW 0.59 C/mW

@25C 300 mW 300 mW 175C 200C 2 mA 7 mA 3000 n 5000 n 6 2.5 50 KG SOKG

above 25C 2 mwrc

SO 30

UJT type 2N2646

"

P~ max. 1 max. @25C @25C 300mW SOmA

I,. peak pulse currenl max. 2Amp.

V.2 VollS max.

VSZBJ Volts 35

T. max 1
125C

71 min. 0.56

max.
0.75

30

RssKO min. typo 4.7 7.0

Max. 9.1

I,. max. J.lA 5.0 min.

Iv mA 4.0

liD

-2.1