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PRODUCT DESCRIPTION
The SST39LF512/010/020/040 and SST39VF512/010/ significantly improves performance and reliability, while low-
020/040 are 64K x8, 128K x8, 256K x8 and 5124K x8 ering power consumption. They inherently use less energy
CMOS Multi-Purpose Flash (MPF) manufactured with during Erase and Program than alternative flash technolo-
SST’s proprietary, high performance CMOS SuperFlash gies. The total energy consumed is a function of the
technology. The split-gate cell design and thick-oxide tun- applied voltage, current, and time of application. Since for
neling injector attain better reliability and manufacturability any given voltage range, the SuperFlash technology uses
compared with alternate approaches. The SST39LF512/ less current to program and has a shorter erase time, the
010/020/040 devices write (Program or Erase) with a 3.0- total energy consumed during any Erase or Program oper-
3.6V power supply. The SST39VF512/010/020/040 ation is less than alternative flash technologies. These
devices write with a 2.7-3.6V power supply. The devices devices also improve flexibility while lowering the cost for
conform to JEDEC standard pinouts for x8 memories. program, data, and configuration storage applications.
Featuring high performance Byte-Program, the The SuperFlash technology provides fixed Erase and Pro-
SST39LF512/010/020/040 and SST39VF512/010/020/ gram times, independent of the number of Erase/Program
040 devices provide a maximum Byte-Program time of 20 cycles that have occurred. Therefore the system software
µsec. These devices use Toggle Bit or Data# Polling to indi- or hardware does not have to be modified or de-rated as is
cate the completion of Program operation. To protect necessary with alternative flash technologies, whose Erase
against inadvertent write, they have on-chip hardware and and Program times increase with accumulated Erase/Pro-
Software Data Protection schemes. Designed, manufac- gram cycles.
tured, and tested for a wide spectrum of applications, they
To meet surface mount requirements, the SST39LF512/
are offered with a guaranteed typical endurance of 10,000
010/020/040 and SST39VF512/010/020/040 devices are
cycles. Data retention is rated at greater than 100 years.
offered in 32-lead PLCC and 32-lead TSOP packages. The
The SST39LF512/010/020/040 and SST39VF512/010/ SST39LF/VF010 and SST39LF/VF020 are also offered in
020/040 devices are suited for applications that require a 48-ball TFBGA package. See Figures 1 and 2 for pin
convenient and economical updating of program, configu- assignments.
ration, or data memory. For all system applications, they
©2003 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
S71150-05-000 3/03 395 MPF is a trademark of Silicon Storage Technology, Inc.
1 These specifications are subject to change without notice.
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040
SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040
Data Sheet
Device Operation edge of the sixth WE# pulse. The internal Erase operation
begins after the sixth WE# pulse. The End-of-Erase can be
Commands are used to initiate the memory operation func-
determined using either Data# Polling or Toggle Bit meth-
tions of the device. Commands are written to the device
ods. See Figure 9 for timing waveforms. Any commands
using standard microprocessor write sequences. A com-
written during the Sector-Erase operation will be ignored.
mand is written by asserting WE# low while keeping CE#
low. The address bus is latched on the falling edge of WE#
or CE#, whichever occurs last. The data bus is latched on Chip-Erase Operation
the rising edge of WE# or CE#, whichever occurs first. The SST39LF512/010/020/040 and SST39VF512/010/
020/040 devices provide a Chip-Erase operation, which
Read allows the user to erase the entire memory array to the ‘1’s
state. This is useful when the entire device must be quickly
The Read operation of the SST39LF512/010/020/040 and
erased.
SST39VF512/010/020/040 device is controlled by CE#
and OE#, both have to be low for the system to obtain data The Chip-Erase operation is initiated by executing a six-
from the outputs. CE# is used for device selection. When byte Software Data Protection command sequence with
CE# is high, the chip is deselected and only standby power Chip-Erase command (10H) with address 5555H in the last
is consumed. OE# is the output control and is used to gate byte sequence. The internal Erase operation begins with
data from the output pins. The data bus is in high imped- the rising edge of the sixth WE# or CE#, whichever occurs
ance state when either CE# or OE# is high. Refer to the first. During the internal Erase operation, the only valid read
Read cycle timing diagram for further details (Figure 4). is Toggle Bit or Data# Polling. See Table 4 for the command
sequence, Figure 10 for timing diagram, and Figure 18 for
Byte-Program Operation the flowchart. Any commands written during the Chip-
Erase operation will be ignored.
The SST39LF512/010/020/040 and SST39VF512/010/
020/040 are programmed on a byte-by-byte basis. Before
programming, the sector where the byte exists must be Write Operation Status Detection
fully erased. The Program operation is accomplished in The SST39LF512/010/020/040 and SST39VF512/010/
three steps. The first step is the three-byte load sequence 020/040 devices provide two software means to detect the
for Software Data Protection. The second step is to load completion of a Write (Program or Erase) cycle, in order to
byte address and byte data. During the Byte-Program optimize the system write cycle time. The software detec-
operation, the addresses are latched on the falling edge of tion includes two status bits: Data# Polling (DQ7) and Tog-
either CE# or WE#, whichever occurs last. The data is gle Bit (DQ6). The End-of-Write detection mode is enabled
latched on the rising edge of either CE# or WE#, whichever after the rising edge of WE# which initiates the internal Pro-
occurs first. The third step is the internal Program operation gram or Erase operation.
which is initiated after the rising edge of the fourth WE# or
The actual completion of the nonvolatile write is asynchro-
CE#, whichever occurs first. The Program operation, once
nous with the system; therefore, either a Data# Polling or
initiated, will be completed, within 20 µs. See Figures 5 and
Toggle Bit read may be simultaneous with the completion
6 for WE# and CE# controlled Program operation timing
of the Write cycle. If this occurs, the system may possibly
diagrams and Figure 15 for flowcharts. During the Program
get an erroneous result, i.e., valid data may appear to con-
operation, the only valid reads are Data# Polling and Tog-
flict with either DQ7 or DQ6. In order to prevent spurious
gle Bit. During the internal Program operation, the host is
rejection, if an erroneous result occurs, the software routine
free to perform additional tasks. Any commands written
should include a loop to read the accessed location an
during the internal Program operation will be ignored.
additional two (2) times. If both reads are valid, then the
device has completed the Write cycle, otherwise the rejec-
Sector-Erase Operation tion is valid.
The Sector-Erase operation allows the system to erase the
device on a sector-by-sector basis. The sector architecture
is based on uniform sector size of 4 KByte. The Sector-
Erase operation is initiated by executing a six-byte com-
mand sequence with Sector-Erase command (30H) and
sector address (SA) in the last bus cycle. The sector
address is latched on the falling edge of the sixth WE#
pulse, while the command (30H) is latched on the rising
SuperFlash
X-Decoder Memory
CE#
OE# Control Logic I/O Buffers and Data Latches
WE#
DQ7 - DQ0
395 ILL B1.1
SST39LF/VF512 SST39LF/VF010 SST39LF/VF020 SST39LF/VF040
WE#
VDD
A12
A15
A16
A18
A17
WE#
VDD
A12
A15
A16
A17
NC
WE#
VDD
A12
A15
A16
NC
NC
WE#
VDD
A12
A15
NC
NC
NC
DQ1
DQ2
VSS
DQ3
DQ4
DQ5
DQ6
DQ2
VSS
DQ3
DQ4
DQ5
DQ6
DQ1
DQ2
VSS
DQ3
DQ4
DQ5
DQ6
DQ1
DQ2
VSS
DQ3
DQ4
DQ5
DQ6
TOP VIEW (balls facing down) TOP VIEW (balls facing down)
SST39LF/VF010 SST39LF/VF020
6 6
A14 A13 A15 A16 NC NC NC VSS A14 A13 A15 A16 A17 NC NC VSS
5 5
A9 A8 A11 A12 NC A10 DQ6 DQ7 A9 A8 A11 A12 NC A10 DQ6 DQ7
395 48-tfbga B3K P02.0
A B C D E F G H A B C D E F G H
FIGURE 3: PIN ASSIGNMENT FOR 48-BALL TFBGA (6MM X 8MM) FOR 1 MBIT AND 2 MBIT
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum
Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation
of the device at these conditions or conditions greater than those defined in the operational sections of this data
sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)
AC CHARACTERISTICS
TRC TAA
ADDRESS AMS-0
TCE
CE#
TOE
OE#
TCHZ
TOH
HIGH-Z TCLZ HIGH-Z
DQ7-0
DATA VALID DATA VALID
TBP
OE#
TCH
CE#
TCS
DQ7-0 AA 55 A0 DATA
TBP
OE#
TCH
WE#
TCS
DQ7-0 AA 55 A0 DATA
ADDRESS AMS-0
TCE
CE#
TOES
TOEH
OE#
TOE
WE#
DQ7 D D# D# D
395 ILL F06.0
Note: AMS = Most significant address
AMS = A15 for SST39LF/VF512, A16 for SST39LF/VF010,
A17 for SST39LF/VF020 and A18 for SST39LF/VF040
ADDRESS AMS-0
TCE
CE#
TOE TOES
TOEH
OE#
WE#
DQ6
TSE
SIX-BYTE CODE FOR SECTOR-ERASE
CE#
OE#
TWP
WE#
DQ7-0
AA 55 80 AA 55 30
TSCE
SIX-BYTE CODE FOR CHIP-ERASE
CE#
OE#
TWP
WE#
DQ7-0
AA 55 80 AA 55 10
CE#
OE#
TWP TIDA
WE#
TWPH
TAA
DQ7-0
AA 55 90 BF Device ID
Note: Device ID = D4H for SST39LF/VF512, D5H for SST39LF/VF010, D6H for SST39LF/VF020, and D7H for SST39LF/VF040.
DQ7-0 AA 55 F0
TIDA
CE#
OE#
TWP
WE#
T WHP
SW0 SW1 SW2 395 ILL F10.0
VIHT
VILT
AC test inputs are driven at VIHT (0.9 VDD) for a logic “1” and VILT (0.1 VDD) for a logic “0”. Measurement reference points
for inputs and outputs are VIT (0.5 VDD) and VOT (0.5 VDD). Input rise and fall times (10% ↔ 90%) are <5 ns.
TO TESTER
TO DUT
CL
Start
Load Byte
Address/Byte
Data
Program
Completed
Yes
Program/Erase
Completed
395 ILL F14.0
Chip-Erase Sector-Erase
Command Sequence Command Sequence
Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales
representative to confirm availability of valid combinations and to determine availability of new combinations.
† These 90 ns parts will be phased out and replaced by 70 ns parts in 2003.
Customers should use 70 ns parts for new designs and qualifications.
Non-Pb: All devices in this data sheet are also offered in non-Pb (no lead added) packages.
The non-Pb part number is simply the standard part number with the letter “E” added to the end of the package code.
The non-Pb package codes corresponding to the packages listed above are NHE, WHE, and B3KE.
PACKAGING DIAGRAMS
.042 .021
.048 .013
.595 .553 .032 .400 .530
.585 .547 .026 BSC .490
.050
BSC
.015 Min.
.095
.050 .075
BSC .032
.140 .026
.125
Note: 1. Complies with JEDEC publication 95 MS-016 AE dimensions, although some dimensions may be more stringent.
2. All linear dimensions are in inches (max/min).
3. Dimensions do not include mold flash. Maximum allowable mold flash is .008 inches.
32-plcc-NH-3
4. Coplanarity: 4 mils.
1.05
0.95
Pin # 1 Identifier
0.50
BSC
8.10 0.27
7.90 0.17
12.50 0.15
12.30 0.05
DETAIL
1.20
max.
0.70
0.50 14.20
13.80
0˚- 5˚
0.70
0.50
Note: 1. Complies with JEDEC publication 95 MO-142 BA dimensions,
although some dimensions may be more stringent.
2. All linear dimensions are in millimeters (max/min). 1mm 32-tsop-WH-7
3. Coplanarity: 0.1 mm
4. Maximum allowable mold flash is 0.15 mm at the package ends, and 0.25 mm between leads.
BOTTOM VIEW
8.00 ± 0.20
6 6
5 5
4 4.00 4
6.00 ± 0.20
3 3
2 2
1 1
0.80
A B C D E F G H H G F E D C B A
A1 CORNER A1 CORNER
1.10 ± 0.10
SIDE VIEW
0.12
SEATING PLANE 48-tfbga-B3K-6x8-450mic-2
0.35 ± 0.05
1mm
Silicon Storage Technology, Inc. • 1171 Sonora Court • Sunnyvale, CA 94086 • Telephone 408-735-9110 • Fax 408-735-9036
www.SuperFlash.com or www.sst.com