IceMOS Technology, Ltd.

Corporate Headquarters: Factory Location:

7855 South River Parkway, Suite 122 5 Hannahstown Hill
Tempe, AZ 85285 (USA) Belfast BT17 0LT (UK)

Phone: (602) 288-5870 Phone: +44 2890-574700

Fax : (602) 288-5871 Fax : +44 2890-574746
 IceMOS Technology, Ltd.
Website: www.icemostech.com Year Founded: 2004
Company Structure: Privately Held Employees: 35

Company Profile:
Š IceMOS Technology Ltd is a privately held company with a global sales presence
using direct and distributor sales channels.

Š Originally founded as BCO Technologies in 1993, IceMOS has over 14 years of

experience as a provider of value-added “Advance Engineered Substrates”. We
have built a reputation in the market for excellent quality.

Š IceMOS welcomes projects requiring design or development work to truly

match the customer’s needs and requirements.

Primary Business:
Š Thick Film (>1.5 µm) SOI Substrates
- High Temperature Annealed Bonding
- Standard Single Layer SOI

Š Si-Si Direct Bonded Wafers Substrates

- Excellent Cost Alternative to Epi
- Ultra High Resistivity Epi for RF Applications
- High Resistivity Epi for Photodiode & Photo IC Applications

Š Double Side Polished Silicon Wafers

- 100 and 150mm Diameters - Ultra flat (TTV < 1um)
- Standard (TTV < 3um) - Thickness (100~500um and 200~600um)

Š Advance Engineered Substrate Wafers (SOI or Bulk Si)

- Trench & Refilled SOI Substrate - Cavity Bonded SOI Substrates
- Multiple Layer SOI Substrates - Through Silicon Via (TSV)
- Customized to Desired Spec

Technical Expertise:
Š Deep Reactive Ion Etching (DRIE) With Refill Options
- Etch processes capable up to 100µm deep trenches
- Trenched areas up to 85% of exposed silicon area
- Aspect ratios up to 40:1, with typical ratios from 10:1~15:1 in production

Š Silicon Wafer Bonding

- High temperature anneal bonding

Š Wafer Thinning
- Precision grind and polish with +/- 1µm absolute thickness and TTV of < 1µm
Company Attributes:
Š Engineering Expertise: Experienced design and manufacturing engineering
support for development or mas-production

Š Cost Efficient: Low overhead structure in place without sacrificing customer

satisfaction

Š Small and Flexible: Cost competitive batch manufacturing

Š Best in Class Quality Systems:

- World Class Systems: ISO 9000:2000 quality systems
- Complete Lot Tracking: Full batch history and wafer tracking available
- In-house Failure Analysis: Equipment and expertise for in-process and post
sales analysis

Factory Information:

Š Bonded Wafer Production:

- 100, 125, 150, and 200mm wafer diameter capability
- Over 5,000 square feet of clean-room production floor space

Š Modeling:
- Full Device and Process Simulation (Silvaco Athena/ATLAS)

Š Processing:
- Deep RIE process
- Projection Alignment
- Front & Backside contact alignment Oxidation (dry/wet)
- LPCVD TEOS + Poly
- Polysilicon & Oxide CMP Planarisation
- Low Temp Oxide Passivation
- Aluminium Metal deposition
- Phos, Arsenic, Boron Implant

Memberships and Certifications:

 IceMOS Operating Locations

Global Distribution Network:

Korea: Middle East:

Dooson Inc
Dooson Bldg. 1F
67-30 Kuui-Dong, Kwangjin-Ku
Seoul, Korea 143-819
Tel : (82) 2 444 5375
Fax : (82) 2 444 4104
web: www.dooson-inc.co.kr
Dashro
2 Bosmat St., P.O. Box 3147
Shoham, Israel 73142
Tel: +972-52-3227484
Fax: +972-3-9793932
web: www.dashro.co.il

Japan: Taiwan:
Electronics and Materials Aceteam Corporation
11-11 Funado-cho, Ashiya-shi Tai Yuen Hi-Tech Industrial Park
Hyogo-ken 659-0093 3F-2, No. 26, Tai Yuen Street
Japan Chupei City, Hsinchu 302
Tel: 0797-34-7007 Taiwan
Fax: 0797-34-7008 Tel: +886-3-552-6869
web: www.eandmint.co.jp Fax: +886-3-552-6859
web: www.aceteam.com.tw
 Engineered Substrate Photo Gallery:

TSV TSV (cut away)

• Silicon Device (20um)

• Buried Oxide (1um)
• Silicon Device (70um)
• Buried Oxide (1um)
• Doped Polysilicon (1um)
• Buried Oxide (1um)

Multi-Layer SOI Microfluidic Channels

SOI With Deep Cavity Bonded SOI

Trench Isolation
 Engineered Substrate Photo Gallery:

Silicon Gears High Resolution

Accelerometer