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2N3819

2N3819

N-Channel JFET

Product Summary

V GS(off) (V)

V (BR)GSS Min (V)

g fs Min (mS)

I DSS Min (mA)

–8

–25

2

2

Features

Excellent High-Frequency Gain:

Gps 11 dB @ 400 MHz Very Low Noise: 3 dB @ 400 MHz Very Low Distortion High ac/dc Switch Off-Isolation High Gain: A V = 60 @ 100 A

Benefits

Wideband High Gain Very High System Sensitivity High Quality of Amplification High-Speed Switching Capability High Low-Level Signal Amplification

Applications

High-Frequency Amplifier/Mixer Oscillator Sample-and-Hold Very Low Capacitance Switches

Description

The 2N3819 is a low-cost, all-purpose JFET which offers good performance at mid-to-high frequencies. It features low noise and leakage and guarantees high gain at 100 MHz.

Its TO-226AA (TO-92) package is compatible with various tape-and-reel options for automated assembly (see Packaging Information). For similar products in TO-206AF (TO-72) and TO-236 (SOT-23) packages, see the 2N4416/2N4416A/SST4416 data sheet.

TO-226AA

S

G

D

(TO-92) 1 2 3
(TO-92)
1
2
3

Top View

Absolute Maximum Ratings

Gate-Source/Gate-Drain Voltage

 

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–25 V

Forward Gate Current

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10 mA

Storage Temperature

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–55 to 150 C

Operating Junction Temperature

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–55 to 150 C

Lead Temperature ( 1 / 16 ” from case for 10 sec.) Power Dissipation a

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Notes

a. Derate 2.8 mW/ C above 25 C

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300 C 350 mW

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Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70238.

2N3819

2N3819

Specifications a

       

Limits

 
 

Parameter

 

Symbol

 

Test Conditions

 

Min

Typ b

Max

Unit

Static

Gate-Source Breakdown Voltage

 

V

(BR)GSS

I G = –1 A , V DS = 0 V

 

–25

–35

   

Gate-Source Cutoff Voltage

 

V

GS(off)

V DS = 15

V, I D = 2 nA

   

–3

–8

V

Saturation Drain Current c

 

I

DSS

V DS = 15

V, V GS = 0 V

 

2

10

20

mA

G t

R

C

t

 

I

V GS = –15 V, V DS = 0 V

   

–0.002

–2

nA

Gate Reverse Current

I

GSS

 

T A = 100 C

 

–0.002

–2

A

Gate Operating Current d

   

I

G

V DG = 10 V, I D = 1 mA

   

–20

 

A

Drain Cutoff Current

 

I

D(off)

V DS = 10

V, V GS = –8 V

   

2

 

pA

Drain-Source On-Resistance

 

r

DS(on)

 

V GS = 0 V,

I D = 1 mA

   

150

 

Gate-Source Voltage

 

V

GS

V DS = 15

V, I D = 200 A

–0.5

–2.5

–7.5

V

Gate-Source Forward Voltage

 

V

GS(F)

 

I G = 1 mA , V DS = 0 V

   

0.7

 

V

Dynamic

     

f

=

1 kHz

2

5.5

6.5

 

Common-Source Forward Transconductance

d

 

fs

 

mS

ommon-

ource

orwar

ranscon uc ance

 

g

V DS = 15

V GS = 0 V

V

f = 100 MHz

1.6

5.5

 

m

Common-Source Output Conductance d

   

g

os

 

f

=

1 kHz

 

25

50

S

Common-Source Input Capacitance

   

C

iss

V

15

 

2.2

8

F

Common-Source Reverse Transfer Capacitance

 

C

rss

V DS = 15

V, V V V GS = 0 0 V V, f f = 1 1 MHz MH

 

0.7

4

pF

Equivalent Input Noise Voltage d

           

nV

 

e

n

V DS = 10 V, V GS = 0 V, f = 100 Hz

6

Hz

Notes

a. T A = 25 C unless otherwise noted.

b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

c. Pulse test: PW 300 s, duty cycle 2%.

d. This parameter not registered with JEDEC.

Typical Characteristics

Drain Current and Transconductance vs. Gate-Source Cutoff Voltage 20 I DSS 16 12 g fs
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
20
I
DSS
16
12
g
fs
8
I
DSS @ V DS = 15 V, V GS =
0 V
4
g
V
= 15 V, V GS = 0
V
fs @
DS
f
= 1 kHz
0
0
–2
–4
–6
–8
–10
I DSS – Saturation Drain Current (mA)

10

8

6

4

2

0

V GS(off) – Gate-Source Cutoff Voltage (V)

On-Resistance and Output Conductance

– Output Conductance ( S)g g fs – Forward Transconductance (mS) vs. Gate-Source Cutoff Voltage
– Output Conductance ( S)g
g fs – Forward Transconductance (mS)
vs. Gate-Source Cutoff Voltage
500
100
r
DS @ I D = 1 mA, V GS = 0 V
g
os @ V DS = 10 V, V GS =
0 V
f
= 1
kHz
400
80
r
300
DS
60
g
os
40
200
100
20
0
0
0
–2
–4
–6
–8
–10
r DS(on) – Drain-Source On-Resistance ( )

V GS(off) – Gate-Source Cutoff Voltage (V)

NH

2N3819

2N3819

Typical Characteristics (Cont’d)

Gate Leakage Current 100 nA 5 mA 1 mA 10 nA 0.1 mA 1 nA
Gate Leakage Current
100
nA
5 mA
1 mA
10
nA
0.1 mA
1
nA
T A = 125 C
I
GSS @
100
pA
125
C
5 mA
1
mA
10
pA
0.1 mA
T A = 25 C
1
pA
I
@ 25 C
GSS
0.1 pA
0
10
20
I G – Gate Leakage

V DG – Drain-Gate Voltage (V)

Output Characteristics

10 –2 V V GS(off) = 8 V GS = 0 V 6 –0.2 V
10
–2 V
V GS(off) =
8
V GS = 0 V
6
–0.2 V
–0.4 V
4
–0.6 V
–0.8 V
–1.0 V
2
–1.2 V
0
–1.4 V
0
2
4
68
10
V DS – Drain-Source Voltage (V)
Transfer Characteristics
10
10 V
V GS(off) = –2 V
V DS =
8
T A = –55 C
6
25
C
125
C
4
2
0
0
–0.4
–0.8
–1.2
–1.6
–2
I D – Drain Current (mA)
I D – Drain Current (mA)

V GS – Gate-Source Voltage (V)

Common-Source Forward Transconductance vs. Drain Current

10 V DS = 10 V V GS(off) = –3 V f = 1 kHz
10
V
DS = 10 V
V GS(off) = –3 V
f
= 1 kHz
8
T A =
–55 C
6
25
C
4
125
C
2
0
0.1
1
10
g fs – Forward Transconductance (mS)

I D – Drain Current (mA)

Output Characteristics

15 –3 V V GS(off) = 12 V = 0 V GS 9 –0.3 V
15
–3 V
V GS(off) =
12
V
= 0 V
GS
9
–0.3 V
–0.6 V
6
–0.9 V
–1.2 V
–1.5 V
3
–1.8 V
0
0
2
4
68
10
V DS – Drain-Source Voltage (V)
Transfer Characteristics
10
–3 V
V
10 V
V GS(off) =
DS =
8
T A = –55 C
25
C
6
125
C
4
2
0
0
–0.6
–1.2
–1.8
–2.4
–3
I D – Drain Current (mA)
I D – Drain Current (mA)

V GS – Gate-Source Voltage (V)

2N3819

2N3819

Typical Characteristics (Cont’d)

Transconductance vs. Gate-Source Voltage 10 V V = 10 V V GS(off) = –2 DS
Transconductance vs. Gate-Source Voltage
10
V
V
= 10
V
V GS(off) = –2
DS
f
= 1
kHz
8
T A = –55 C
6
25
C
4
125
C
2
0
0
–0.4
–0.8
–1.2
–1.6
–2
g
fs – Forward Transconductance (mS)

V GS – Gate-Source Voltage (V)

On-Resistance vs. Drain Current

300 T A = –55 C 240 V = –2 V GS(off) 180 –3 V
300
T A =
–55 C
240
V
= –2 V
GS(off)
180
–3 V
120
60
0
0.1
1
10
r DS(on) – Drain-Source On-Resistance ( )

I

D – Drain Current (mA)

Common-Source Input Capacitance vs. Gate-Source Voltage 5 f = 1 MHz 4 V DS =
Common-Source Input Capacitance
vs. Gate-Source Voltage
5
f
=
1 MHz
4
V
DS = 0 V
3
2
V DS = 10 V
1
0
0
–4
–8
–12
–16
–20
iss – Input Capacitance (pF)C

V GS – Gate-Source Voltage (V)

Transconductance vs. Gate-Source Voltgage

10 V V = 10 V V GS(off) = –3 DS f = 1 kHz
10
V
V
= 10
V
V GS(off) = –3
DS
f
= 1
kHz
8
T A
=
–55 C
6
25
C
4
125
C
2
0
g
fs – Forward Transconductance (mS)
0 –0.6 –1.2 –1.8 –2.4 –3 V GS – Gate-Source Voltage (V) Circuit Voltage Gain
0
–0.6
–1.2
–1.8
–2.4
–3
V
GS – Gate-Source Voltage (V)
Circuit Voltage Gain vs. Drain Current
100
g fs R L
A
V
1
R L g os
80
Assume
V DD = 15 V, V DS = 5 V
10
V
R
L
I D
60
V
=
–2 V
GS(off)
40
20
–3 V
0
0.1
1
10
A V – Voltage Gain

I D – Drain Current (mA)

Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage 3.0 f = 1 MHz 2.4 1.8 V
Common-Source Reverse Feedback
Capacitance vs. Gate-Source Voltage
3.0
f = 1 MHz
2.4
1.8
V DS = 0 V
1.2
V DS =
10 V
0.6
0
0
–4
–8
–12
–16
–20
rss – Reverse Feedback Capacitance (pF)C

V GS – Gate-Source Voltage (V)

2N3819

2N3819

Typical Characteristics (Cont’d)

Input Admittance 100 T A = 25 C V DS = 15 V V GS
Input Admittance
100
T A = 25 C
V DS = 15 V
V GS = 0 V
Common Source
b
is
10
g
is
1
0.1
100
200
500
1000
(mS)

f – Frequency (MHz)

Reverse Admittance

10 T A = 25 C V DS = 15 V V GS = 0
10
T A = 25 C
V DS = 15 V
V GS = 0 V
–b rs
Common Source
1
–g rs
0.1
0.01
100
200
500
1000
(mS)

f – Frequency (MHz)

Equivalent Input Noise Voltage vs. Frequency 20 V GS(off) = –3 V V DS =
Equivalent Input Noise Voltage vs. Frequency
20
V GS(off) = –3 V
V DS =
10 V
16
12
8
I
= 5 mA
D
4
I
=
I
D
DSS
0
10 100
1 k
10 k
100 k
nVe
/ √ Hz)(–
Noise Voltage
n

f – Frequency (Hz)

Forward Admittance

100 T A = 25 C V DS = 15 V V GS = 0
100
T A = 25 C
V DS = 15 V
V GS = 0 V
Common Source
10
g
fs
–b is
1
0.1
100 200
500
1000
(mS)

f – Frequency (MHz)

Output Admittance 10 T A = 25 C V DS = 15 V b os
Output Admittance
10
T A = 25 C
V DS = 15 V
b
os
V GS = 0 V
Common Source
1
g
os
0.1
0.01
100
200
500
1000
(mS)

f – Frequency (MHz)

Output Conductance vs. Drain Current 20 V = 10 V V GS(off) = –3 V
Output Conductance vs. Drain Current
20
V
= 10
V
V GS(off) = –3 V
DS
f
= 1
kHz
16
T A = –55 C
12
25
C
8
125
C
4
0
0.1
1
10
I
– Drain Current (mA)
D
– Output Conductance ( S)g