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BU806/807
High Voltage & Fast Switching Darlington Transistor
Using In Horizontal Output Stages of 110 Crt Video Displays BUILT-IN SPEED-UP Diode Between Base and Emitter
1
1.Base
ICES
VCE = 400V, VBE = 0 VCE = 330V, VBE = 0 VCE = 400V, VBE = -6V VCE = 330V, VBE = -6V VBE = 6V, IC = 0 IC = 5A, IB = 50mA IC = 5A, IB = 50mA IF = 4A
ICEV
BU806/807
Typical Characteristics
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
1000
10
Ic = 100 IB
VBE(sat)
100
V CE = 5V V CE = 1.5V
V CE(sat)
10 0.1
10
0.1 0.1
10
100
10
1000
100
IC MAX. (Pulse)
10
1ms 10us
500
m 10
IC MAX. (DC)
1
us
DC
100us
0.1
BU806
0.1 0.1 1 10 0.01 0.01
BU807
0.1 1 10 100 1000
80
70
60
50
40
30
20
10
0 0 50
o
100
150
200
BU806/807
Package Demensions
TO-220
9.90 0.20
1.30 0.10 2.80 0.10
4.50 0.20
(1.70)
1.30 0.05
+0.10
9.20 0.20
(1.46)
13.08 0.20
(1.00)
(3.00)
15.90 0.20
1.27 0.10
1.52 0.10
10.08 0.30
18.95MAX.
(3.70)
(45 )
0.50 0.05
+0.10
2.40 0.20
10.00 0.20
Dimensions in Millimeters
2000 Fairchild Semiconductor International Rev. A, February 2000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx Bottomless CoolFET CROSSVOLT E2CMOS FACT FACT Quiet Series FAST FASTr GTO
DISCLAIMER
HiSeC ISOPLANAR MICROWIRE POP PowerTrench QFET QS Quiet Series SuperSOT-3 SuperSOT-6
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. E