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Product specification
BUK78150-55
PINNING - SOT223
PIN 1 2 3 4 gate drain source drain (tab) DESCRIPTION
PIN CONFIGURATION
4
SYMBOL
d
g s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR VGS ID ID ID IDM Ptot Ptot Tstg, Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Total power dissipation Storage & operating temperature CONDITIONS RGS = 20 k Tsp = 25 C On PCB in Fig.19 Tamb = 25 C On PCB in Fig.19 Tamb = 100 C Tsp = 25 C Tsp = 25 C On PCB in Fig.19 Tamb = 25 C MIN. - 55 MAX. 55 55 16 5.5 2.6 1.6 30 8.3 1.8 150 UNIT V V V A A A A W W C
January 1998
Rev 1.000
Philips Semiconductors
Product specification
BUK78150-55
MAX. 15 70
STATIC CHARACTERISTICS
Tj= 25C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IGSS V(BR)GSS RDS(ON) PARAMETER Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate source leakage current CONDITIONS VGS = 0 V; ID = 0.25 mA Tj = -55C VDS = VGS; ID = 1 mA Tj = 150C Tj = -55C VDS = 55 V; VGS = 0 V; VGS = 10 V Tj = 150C Tj = 150C Tj = 150C MIN. 55 50 2.0 1.2 16 TYP. 3.0 0.05 0.04 120 MAX. 4.0 4.4 10 100 1 10 150 277 UNIT V V V V V A A A A V m m
DYNAMIC CHARACTERISTICS
Tmb = 25C unless otherwise specified SYMBOL gfs Ciss Coss Crss td on tr td off tf PARAMETER Forward transconductance Input capacitance Output capacitance Feedback capacitance Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time CONDITIONS VDS = 25 V; ID = 5 A; Tj = 25C VGS = 0 V; VDS = 25 V; f = 1 MHz MIN. 0.5 TYP. 2.5 190 65 32 9 28 15 8 MAX. 240 80 45 14 42 23 12 UNIT S pF pF pF ns ns ns ns
January 1998
Rev 1.000
Philips Semiconductors
Product specification
BUK78150-55
TYP. -
MAX. 15
UNIT mJ
PD%
BUKX8150-55
100 us 1 DC 1 ms 10 ms 100 ms
20
40
60
80 100 Tmb / C
120
140
0.1
10 VDS/V
55
Fig.3. Safe operating area. Tsp = 25 C ID & IDM = f(VDS); IDM single pulse; parameter tp
ID%
Zth / (K/W)
BUKX8150-55
20
40
60
80 Tmb / C
100
120
140
1E-02 1E-07
1E-05
1E-03 t/s
1E-01
1E+01
Fig.2. Normalised continuous drain current. ID% = 100ID/ID 25 C = f(Tsp); conditions: VGS 10 V
January 1998
Rev 1.000
Philips Semiconductors
Product specification
BUK78150-55
10 ID/A 8
16 10 8
VGS/V =
6.5
gfs/S 3.5
6.0 6
2.5
5.5 6
2.5
BUK98XX-55
1.5
ID/A
10
11
0.5 -100
-50
50 Tmb / degC
100
150
200
3 min.
4 Tj/C = 2 150 25
VGS/V
0 -100
-50
50 Tj / C
100
150
200
Fig.10. Gate threshold voltage. VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
January 1998
Rev 1.000
Philips Semiconductors
Product specification
BUK78150-55
1E-01
Sub-Threshold Conduction
10 IF/A 8
1E-03
1E-04
2
1E-05
0
1E-06
0.2
0.4
1.2
1.4
pF
200 150 100 50 0 0.01 Coss Crss 0.1 1 VDS/V 10 100
Fig.12. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
12 VGS/V 10
+
L VDS
VDS = 14V VDS = 44V
VDD
-ID/100
R 01 shunt
QG/nC
Fig.13. Typical turn-on gate-charge characteristics. VGS = f(QG); conditions: ID = 5 A; parameter VDS
Fig.16. Avalanche energy test circuit. 2 WDSS = 0.5 LID BVDSS /(BVDSS VDD )
January 1998
Rev 1.000
Philips Semiconductors
Product specification
BUK78150-55
+
RD VDS VGS 0 RG T.U.T.
VDD
January 1998
Rev 1.000
Philips Semiconductors
Product specification
BUK78150-55
Dimensions in mm.
36
18
60 9 4.6 4.5
10
7 15 50
Fig.18. PCB for thermal resistance and power rating for SOT223. PCB: FR4 epoxy glass (1.6 mm thick), copper laminate (35 m thick).
January 1998
Rev 1.000
Philips Semiconductors
Product specification
BUK78150-55
0.2
0.10 0.02
3.7 3.3 13
7.3 6.7
16 max
1
10 max 1.8 max 1.05 0.85 4.6 2.3
2
0.80 0.60
3
0.1 M (4x) B
January 1998
Rev 1.000
Philips Semiconductors
Product specification
BUK78150-55
This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
January 1998
Rev 1.000