2SK2651-01MR

FAP-IIS Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = 30V Guarantee Repetitive Avalanche Rated

N-channel MOS-FET
900V

2,5

6A

50W

> Outline Drawing

> Applications
Switching Regulators UPS DC-DC converters General Purpose Power Amplifier

> Maximum Ratings and Characteristics

- Absolute Maximum Ratings ( T
C=25C), unless otherwise specified

> Equivalent Circuit

Rating 900 6 24 30 6 71,9 50 150 -55 ~ +150 Unit V A A V A mJ W C C

Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Repetitive or Non-Repetitive (Tch 150C) Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range

Symbol V DS ID I D(puls) V GS I AR E AS PD T ch T stg

- Electrical Characteristics (TC=25C),

Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge

unless otherwise specified

Symbol V (BR)DSS V GS(th) I DSS I R g C C C t t t t I V t Q

GSS DS(on) fs iss oss rss d(on) r d(off) f AV SD rr rr

Test conditions ID=1mA VGS =0V ID=1mA VDS= VGS VDS=900V Tch =25C VGS=0V Tch=125C VGS =30V VDS=0V ID=3A VGS =10V ID=3A VDS=25V VDS=25V VGS =0V f=1MHz VCC=600V ID=6A VGS=10V RGS=10 Tch =25C L = 100H IF=2xI DR VGS =0V T ch =25C IF=IDR V GS =0V -dI F/dt=100A/s T ch =25C

Min. 900 3,5

Typ. 4,0 10 0,2 10 1,87 4 900 130 70 25 80 70 40 1,0 850 8,5

Max. 4,5 500 1,0 100 2,5

Unit V V A mA nA S pF pF pF ns ns ns ns A V ns C

- Thermal Characteristics Item Thermal Resistance

Symbol R th(ch-c) R th(ch-a)

Test conditions channel to case channel to air

Min.

Typ.

Max. 3,125 62,5

Unit C/W C/W

Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98

N-channel MOS-FET
900V

2,5

2SK2651-01MR
FAP-IIS Series
Drain-Source-On-State Resistance vs. Tch
RDS(on) =f(Tch): ID=3A; VGS=10V

6A

50W

> Characteristics
Typical Output Characteristics
ID=f(VDS); 80s pulse test; TC=25C

Typical Transfer Characteristics

ID=f(VGS); 80s pulse test;VDS=25V; Tch=25C

ID [A]

RDS(ON) []

2
ID [A]

VDS [V]

Tch [C]

VGS [V]

Typical Drain-Source-On-State-Resistance vs. ID

RDS(on)=f(ID); 80s pulse test; TC=25C

Typical Forward Transconductance vs. ID

gfs=f(ID); 80s pulse test; VDS=25V; Tch=25C

Gate Threshold Voltage vs. Tch

VGS(th)=f(Tch); ID=1mA; VDS=VGS

RDS(ON) []

gfs [S]

5
VGS(th) [V]

ID [A]

ID [A]

Tch [C]

Typical Capacitances vs. VDS

C=f(VDS); VGS=0V; f=1MHz

Avalanche Energy Derating

Eas=f(starting Tch); VCC=90V; IAV=6A

Forward Characteristics of Reverse Diode

IF=f(VSD); 80s pulse test; VGS=0V

C [F]

7
Eas [mJ]

IF [A]

VDS [V]

Starting Tch [C]

VSD [V]

Allowable Power Dissipation vs. TC

PD=f(Tc)

Safe operation area

ID=f(VDS): D=0,01, Tc=25C

Zth(ch-c) [K/W]

Transient Thermal impedance

Zthch=f(t) parameter:D=t/T

PD [W]

10

ID [A]

12

Tc [C]

VDS [V]

t [s]

This specification is subject to change without notice!