POWER FORUM: POWER PACKAGING Moduli e componenti dellelettronica di potenza con attenzione allefficienza energetica

High thermal conductivity substrates Roberto Bellu, Paolo Fabbri

Who we are
Since 1980 Padar supports high tech activities in Microelectronics Power electronics Photovoltaic Some of our customers:

Our main partners for Power Electronics: DBC substrates (Direct Bonded Copper) Micro Channel Water Coolers AlSiC baseplates and coolers Hermetic Packages

Our other partners:

Power electronics applications

1W 10W 100W 1kW 10kW 100kW 1MW 10MW

4

Example: Induction Motor Power Drive

-Simple topologies -Hundreds amps -High voltage

-Complex topologies -Microamps/Milliamps/Amps -Usually low voltages

IGBTs/Mosfets switch On/Off thousands of times per second

7

vCE(t) iC(t)

VCC IO

pv(t)

iC

vCE

0 t t1 t2

( = ) (

Losses:

Ptot = Pconduction + Pswitching

Heat Flux for Power Semiconductors

10000

Chips need Cooling

1000

Surface of Sun

Power Semiconductor Chip

100

Saturn V Engine (Case) Hot-Plate

10

W/cm2

Logic Chips

Light Bulb (100 W)

0,1

Heat Loss from Human Body

0,01 10 100 1000 10000

Absolute temperature [K]

10

 The basic idea behind power modules: Separation of the paths for heat and current

current thermal conductive electrical isolation

heat

11

Concept of Thermal Resistance: - Thermal barrier to heat dissipation

Rth chip

Tj

Rth solder
Junction temperature

Rth substrate

Rth solder

Ta

Ambient temperature

Rth thermal grease Rth heatsinkambient 12

The electrical isolation substrate gives the biggest contribution to total Thermal resistance. Therefore we need substrates with:

1. Effective Heat Dissipation High Thermal Conductivity Materials Increased Heat Transfer by Heat Spreading and Heat Capacity 2. Good Themo-Mechanical Coupling Compatible CTE Materials Selection

3. Long Life Time in Real Working Conditions Power Cycling and Thermal Shock Vibrations 4. Low Material Degradation Thermal and Environmental Aging Must keep isolation properties!!
13

Power Circuits Substrates

Power Circuits Substrates preferably based on: Ceramic Insulating Layer
Stable physical and thermo-mechanical properties High Thermal Conductivity (24 180 W/ mK) Thick metal foils beyond the limits of hybrid and organic substrates: 130 600 m Thick metal foils withstand high currents (100-1.000 Amps), and assure better thermal dissipation

Thick Conductive Layers

Main technologies for Ceramic Based Power Substrates are: Active Metal Brazing
- Copper

foils bonded to ceramic surface by special brazing filler (Ag, Cu, Ti, Zr) - Typical ceramics: AlN, Si3N4

Direct Bonding Copper

Copper foils bonded to ceramic surface by eutectic melting of copper oxide Typical ceramics: Al2O3, AlN

14

DBC Substrates Main Features

Low Coefficient of Thermal Expansion (CTE = 7- 9 ppm/K - possible mounting of large dice Low Thermal Resistance (TCAl2O3 = 24 W/mK; TCAlN = 180 W/mK) - suitable for high power applications Dielectric Strenght (DC) > 20 kV/mm (Al2O3, AlN) - suitable for high voltage applications
@

20-300C)

15

DBC Process
The DBC process is based on the physical fact, that oxygen reduces the melting point from 1083C to 1065C (Eutectic melting temperature). By oxidation of copper foils or injection of oxygen during high temperature annealing between 1065C and 1080C a thin layer of eutectic melt forms.

1080 -

1070 -

1060 -

Eutectic

1050 -

0.8 1.2 1.6 0.4 O2-Concentration in Atom-%

16

DBC Process
The melt reacts with the Alumina by forming a very thin Copper-AluminumSpinel layer: CuO + Al2O3 = CuAl2O4 Copper to copper fusing is possible in the same principle way (this technique is used to build Liquid Coolers)

17

AlN DBC Process

Copper-Aluminum-Nitride (AlN) DBC is possible by transforming the AlN-Surface to Alumina by high temperature oxidation.

18

DBC Process Flow

19

Design Features
Conductor Width/Spacing: - typical range: 0.3 1.0 mm
- 0.7-0.5 mm @ 0.3 mm Cu thickness

Master Cards vs Single Parts

- Scribe lines

Finishing: bare copper, electroless Ni, Flash Au

20

Power Electronics Assembly

Die Attach by soldering/glueing

Wire Bonding Thick Al wires (125-500 m)

System Assembly

Typical applications

Low cost solution for power < 1kW

Customized power module supply for wastewater pumps

Module for traction drive 21

Typical DBC Configurations

Thick Alumina DBC
0.3 mm Cu/0.63 Al2O3

Thin Alumina DBC

0.3 mm Cu/0.38 Al2O3

Aluminium Nitride DBC

0.3 mm Cu/0.38 Al2O3

Rth,jc [K/W] - 15% - 40%

Thick Al2O3 DBC

Thin Al2O3 DBC

AlN DBC

22

Mechanical Strength of DBC Substrates

In real working conditions DBC substrates are not mechanically stressed Thermal stresses due to thermal mismatch between copper and ceramic DBC substrate is stronger than bare ceramic

99

Probability of Failure F [%]

90 75 63,3

25 10

Alumina Standard DBC dCu=0,20mm DBC dCu=0,25mm DBC dCu=0,30mm

300

400

500

600

700

800

900 1000

Flexural Strength [MPa]

23

Substrate-Base Plate Mismatch

AlN DBC Substrate
20 15 10 5 0 AlN DBC AlSiC CuMo CuW AlN Cu

CTE of Assembly Materials

(ppm/C)

Baseplate Materials

Baseplate
Greater thermal expansion differences result in increased mechanical stresses that weaken substrate attachment. 24

Example # 1: SAM images of a module built on a copper baseplate submitted to thermal fatigue cycles with T = 100 (source: Infineon*) C

55 mm

After only 1000 cycles a delamination between the substrate and the baseplate is evident. After 4000 cycles the soldered surface is reduced of about 40 %.

* Thomas Schuetze, Herman Berg, Oliver Schilling The new 6.5kV IGBT module: a reliable device for medium voltage applications, PCIM September 2001

25

Example # 2: SAM image of a module built on an AlSiC baseplate submitted to thermal fatigue cycles with a T = 100 (source: Infineon*) C

No thermal fatigue, (CTE DBC CTE AlSiC), then even after 20,000 cycles the soldered joynt is perfectly safe.

* Thomas Schuetze, Herman Berg, Oliver Schilling The new 6.5kV IGBT module: a reliable device for medium voltage applications, PCIM September 2001

26

AlSiC - Metal Matrix Composite Material

15 14

CPS AlSiC Instantaneous CTE

AlSiC-12

Instantaneous CTE (ppm/C)

13 12 11 10 9 8 7 6

~37 vol% SiC

AlSiC-10

~55 vol% SiC ~63 vol% SiC

SiC

AlSiC-9

SiC particles uniformly distributed in continuous Al-matrix

AlSiC Composite CTE
25 20 15 10 5 0 SiC AlSiC-9 Al-Metal

5 25 50 75 100 125 150 175 200 Temperature ( C)

27

AlSiC Forming Process

SiC preform with controlled uniform porosity

Machine holes, threaded holes Aluminum completely fills structure

1) Injection Molding of controlled porosity SiC baseplate preform

2) AlSiC composite baseplate after Al-metal infiltration.

3) AlSiC baseplate after machining and finishing

28

Heat Sink and Pin Fin

Pin and Fin Heat Sinks AlSiC Pin Fin Substrate

More tips: www.alsicthermalmanagement.blogspot.com 29

Eliminate Thermal Barriers

From passive cooling to active cooling: 1. Power module with cold plate 2. Micro Channel Cooler with soldered substrate 3. Micro Channel Cooler with integrated substrate

30

Micro Channel Coolers Inner Structure

Inner layers overlapping
Cut B Cut A

Cut A

Chipmounting layer

Cut B

Chipmounting layer

Ceramic Isolation

Ceramic Isolation

31

Thermal Resistance Comparison

100
Heat Sink Ambient

80

60

40

20

About 60% reduction of RthJA (flowrate Case-Heat 2.5l/min.) 2 1 Sink About 60% reduction of RthJA (flowrate 2.5l/min.) 3 2 Junction Junction Junction Ambient Case Ambient 2 1 3

1 Module with base plate fixed onto a cold plate 2 Module with micro channel cooler and soldered Al2O3 substrate 3 Module with micro channel cooler and integrated AlN substrate
32

Rth [K/kW]

AlSiC Pin Fin Cooler

Power Module 228,6 mm Pin Fin Cooler O-ring Manifold Characteristics Thermal Resistance: < 0,01 K/W Pressure Drop: 200 mBar Flow Rate: 4 5,5 l/min Fluid: Water/Glycol (50/50) Heat Losses: 2,5 kW 33 127 mm

Thanks For Your Attention

DBC Substrates: www.curamik.com AlSiC Base Plates: www.alsic.com Blog Tips: www.alsicthermalmanagement.blogspot.com

www.padar.it

34