Bias tee

From Wikipedia, the free encyclopedia A bias tee is a three port network used for setting the DC bias point of some electronic components without disturbing other components. The bias tee is a diplexer. The low frequency port is used to set the bias; the high frequency port passes the radio frequency signals but blocks the biasing levels; the combined port connects to the device, which sees both the bias and RF. It is called a tee because the 3 ports are often arranged in the shape of a T.

Contents
[hide]

1 Design 2 Application 3 Construction o 3.1 A particular construction 3.1.1 Capacitor 3.1.2 Coil 3.1.3 Oscillations 4 See also 5 References 6 External links

[edit] Design

Equivalent circuit of a bias tee. Conceptually, the bias tee can be viewed as an ideal capacitor that allows AC through but blocks the DC bias and an ideal inductor that blocks AC but allows DC. Although some bias tees can be made with a simple inductor and capacitor, wideband bias tees are considerably more complicated because practical components have parasitic elements.

Bias tees are designed for transmission line environments. Typically, the characteristic impedance Z0 will be 50 ohms or 75 ohms. The impedance of the capacitor (XC) is chosen to be much less than Z0, and the impedance of the inductor (XL) is chosen to be much greater than Z0.

Where is the frequency in radians per second and f is the frequency in hertz. Bias tees are designed to operate over a range of signal frequencies. The reactances are chosen to have minimal impact at the lowest frequency. For wide range bias tees, the inductor must be large at the lowest frequency. A large inductor will have a stray capacitance (which creates its self-resonant frequency). At a high enough frequency, the stray capacitance presents a low impedance shunt path for the signal, and the bias tee becomes ineffective. Practical wide band bias tees must use circuit topologies that avoid the shunt path. For example, a Picosecond Pulse Labs 5580 works from 10 kHz to 15 GHz. (Andrews 2000, p. 3) Consequently, the simple design would need an inductance of at least 800 H (XL about j500 ohms at 10 kHz), and that inductor must still look like an inductor at 15 GHz. However, a commercial 820 H inductor has a self-resonant frequency of only 1.8 MHz -- four orders of magnitude too low.[1]

[edit] Application
A bias tee is used to insert DC power into an AC signal to power remote antenna amplifiers or other devices. It is usually positioned at the receiving end of the coaxial cable to pass DC power from an external source to the coaxial cable running to powered device. A bias T consists of a feed inductor to deliver DC to a connector on the device side and a blocking capacitor to keep DC from passing through to the receiver. The RF signal is connected directly from one connector to the other with only the blocking capacitor in series. The internal blocking diode prevents damage to the bias T if reverse supply voltage is applied. Biasing for photodiodes (vacuum and solid state), Microchannel plate detectors, transistors, and triodes. High frequencies are not leaking into a common power supply rail and noise from the power supply does not appear on the signal line. Bias "T" has been used in a variety of applications, but is generally used to provide an RF signal and power to a remote device where running two separate cables would not be advantageous.[2] Examples of this are: Power over Ethernet[3][4], active antennas, low-noise amplifiers, and down converters[5]

[edit] Construction
There are several bias tee designs.

[edit] A particular construction

The construction of the horizontal bar of the T is based on the rigid coaxial cable with air as dielectric. The radius is chosen to be as large as possible without allowing higher modes. The design of a bias "T" is based upon power going out to the remote device, but not being seen by the base station or receiver. It does this by using a capacitor on the RF output terminal, effectively creating an open circuit for the DC current.[6] The incoming RF signal, or the one from the antenna, is the output for the DC power. This front-end of a bias "T" typically consists of a bandpass filter, a low noise amplifier, and a mixer coupled to a local oscillator.[6] [edit] Capacitor At one point a small slice is cut out of the center conductor, therefore a capacitor is formed and low frequencies are blocked. This kind of capacitor has the advantage that it is nearly invisible to higher frequencies. To pass frequencies down to 1 MHz the capacitance has to be increased. A dielectric like NPO multiplies the capacitance by a factor of 65. The thickness of the capacitor has to be minimal without leading to electric breakdown in the dielectric, this means to avoid any peaks in the electric field and this means smooth electrodes with rounded edges and a dielectric protruding between the electrodes (doorknob design). A stack of capacitors can be used, but every capacitor needs access to the surface of the inner conductor, because if it's hidden behind another capacitor the high frequencies won't see it, because the electric field needs a lot of time to travel through a dielectric with a high dielectric constant [edit] Coil A small coil made of fine wire with an air core or MnFeZn-core connects the inner conductor of one of the sides of the capacitor with the a port in the outer conductor leading down the T. Frequencies above 1 GHz hit the coil from the side and apply an equal electric field to the whole coil. Therefore no higher modes are excited within the coil. Because of the inductiveness of the coil almost no current leaks from the center conductor to the port. Frequencies between 1 MHz and 1 GHz do leak into this port, so there is a second coil with a cone shaped core outside of the outer conductor, but inside of a housing to avoid interference with other components. This cone acts like a tapered transmission line transformer. It starts with a high impedance, so a lot of power will be reflected, but the rest will travel down the coil and there is some leakage into the low frequency port. [edit] Oscillations Any oscillations in the capacitor or the coil or the composed LC circuit are damped by the dielectric and the core. Also the small coil should have about 10 ohm resistance to further damp oscillations and avoid ripple on the transmitted spectrum.

SMA, Type N, and 7/16's Bias T's

Fairview Microwave Inc. Website Last Updated: 12/16/2011 1-800-715View sales@fairviewmicrowave.com 4396 Cart Home Adapters Attenuators Bias T's Cable Cable Assemblies Custom Cable Assemblies Cal Kits Etc Connectors Couplers DC Blocks Dust Caps Fiber Optic Filters Hybrids Imp Match Interface Guide Isolators, Circulators Low Pim Kits Open Shorts Phase Shifters Power Dividers QPL Components Switches Standard Gain Horns Tappers Terminations Times Microwave Products Tools Links; ROHS; Reach; Conflict Tech Support Customer Feedback Firesale! Order Info/Terms RMA form These bias t-s (aka bias tee's) allow a dc voltage to be inserted into an rf path with a minimal loss to the rf. Key specs are loss, isolation, frequency, power handkling, 7 connector type. 0 0ShareThisNew

SB3000

SB6000

SB6050

SB18000

BIAS T 10MHZ3GHZ VSWR 1.5 SMA-F'S & PIN 3AMPS Spec SB3000.PD F s (pdf) : Price (1$228.15 9):

BIAS T .1-6GHZ VSWR 1.5 SMA-F'S & PIN 500ma Specs SB6000.PD (pdf) F : Price (1$256.04 9): Price (10- $245.49

BIAS T .01-6GHZ 50V SMA-SMC-SMA 100ma SB6050.PDF Specs (pdf): Price (1-9): $194.59 Price (10-24): $184.35 Price (25-49): $179.22 Qty On Hand: 4

BIAS T .1-18GHZ SMA-F'S & PIN 700ma SB18000A.PDF Specs (pdf): Price (1-9): $435.26 Price (10-24): $419.90 Price (25-49): $409.66 Qty On Hand: 7

Price (10$218.01 24): Price (25$207.87 49): Qty On Hand: 17

24): Price (25$236.67 49): Qty On Hand: 25

SB4000

SB65000

SB3021

SB3023

BIAS T 30KHZ40GHZ VSWR 1.8 2.92-F'S & PIN 500MA Specs (pdf): n/a Price (1$1115.40 9): Price $1064.70 (10-24): Price $1024.14 (25-49): Qty On Hand: 1

BIAS T 30KHZ65GHZ VSWR 1.8 1.85-F'S & PIN 500MA Specs (pdf): n/a Price (1$1977.30 9): Price $1926.60 (10-24): Price $1875.90 (25-49): Qty On Hand: 2

BIAS T 10MHZ-3GHZ VSWR 1.2 N M/F/F 1.5AMPS Specs (pdf): n/a Price (1-9): $162.24 Price (10-24): $157.17 Price (25-49): $152.10 Qty On Hand: 8

BIAS T 10MHZ-3GHZ VSWR 1.2 N M/F/PIN 1.5AMPS Specs (pdf): SB3023.PDF Price (1-9): $157.17 Price (10-24): $152.10 Price (25-49): $147.03 Qty On Hand: 23

SB4200

SB4203

SB3500

SB4500

BIAS T 10MHZ4.2GHZ VSWR 1.25 N M/F/F 1.5AMPS Specs (pdf): n/a Price (1$263.64 9): Price (10$258.57 24): Price (25$253.50 49): Qty On Hand: 10

BIAS T 10MHZ4.2GHZ VSWR 1.25 N M/F/F 1.5AMPS Specs (pdf): n/a Price (1$263.64 9): Price (10$258.57 24): Price (25$253.50 49): Qty On Hand: 10

BIAS-T TYPE N'S BNC-F 700-2700 MHZ VSWR 1.35 100 WATTS SB3500.PDF Specs (pdf): Price (1-9): $223.08 Price (10-24): $218.01 Price (25-49): $212.94 Qty On Hand: 7

BIAS-T 7-16'S BNC-F 700-2700 MHZ VSWR 1.35 175 WATTS Specs (pdf): SB4500.PDF Price (1-9): $302.88 Price (10-24): $292.02 Price (25-49): $287.68 Qty On Hand: 6

Home Adapters Attenuators Bias T's Cable Cable Assemblies Custom Cable Assemblies Cal Kits Etc Connectors Couplers DC Blocks Dust Caps Fiber Optic Filters Hybrids Imp Match Interface Guide Isolators, Circulators Low Pim Kits Open Shorts Phase Shifters Power Dividers QPL Components Switches Standard Gain Horns Tappers Terminations

Times Microwave Products Tools Links; ROHS; Reach; Conflict Tech Support Customer Feedback Firesale! Order Info/Terms RMA form

Bias-T Design Considerations for the LWA

Brian Hicks and Bill Erickson May 21, 2008
The strawman design document [1] for the LWA suggests that the Front End Electronics (FEE) could be powered through the use of a circuit known as a bias-T. We will discuss how a bias-T operates and present a low cost design optimized for performance within the LWA frequency range of 20 to 80 MHz. We highly recommend the use of bias-T based on discrete components incorporated directly into the LWA FEE and ARX subsystems.

I. Introduction
A bias-T is a three port network designed to provide power to remote devices, such as amplifiers, over the same coaxial cable that RF signals are conveyed. The basic topology, and means of operation, of a bias-T network suitable for LWA applications is given in Figure 1.
Capacitor Passes RF and Blocks DC and Low Frequency (60 Hz) AC Inductor Blocks RF and Passes DC and Low Frequency (60 Hz) AC RF ONLY RF + Power Shunt Capacitor Routes any remaining RF leakage to Ground, Increasing Isolation between RF Ports and DC Supply Port. DC Power Supply C1 C2 L1

Figure 1 Basic Inductive Bias-T

Commercially available bias-Ts are available in both connectorized and surface mount versions. These units are typically expensive ($40 to $100) and, although designed to be wideband, often suffer in performance at frequencies below 50 MHz. By concentrating on an LWA specific bias-T we can achieve a significant cost savings. We will focus on presenting a bias-T circuit that is optimized for operation below 100 MHz and has the ability to supply a single polarization of an LWA FEE (230 mA). We will also deliver a circuit with a compact printed circuit board (PCB) footprint. 2

II. LWA Bias-T Design Considerations

Consisting of one inductor and one capacitor the bias-T circuit is simple, but particular consideration must be given to component selection. Although not a part of the generic bias-T circuit, the shunt capacitor (C2) on the DC port should not be considered optional (Figure 1). Addition of this capacitance substantially increases isolation between the RF ports and the DC supply connection by routing any remaining RF leakage on the supply side of the inductor to ground (Figures 11, 12, and 13). It is especially important that the inductor be rated for the necessary current and should optimally have a minimum self resonant frequency (SRF) that is above the highest LWA

frequencies. Throughout the entire LWA band, the inductor must present high impedance, and both capacitors must present low impedance; resonances must be avoided. Based on research and experience, we have selected the following components for consideration and testing:
Capacitors (C1, C2): 0.1 F Ceramic Capacitor (SMT 1208), Panasonic, ECJ-3VB1E104K Inductor (L1): 4.7 H Wirewound Inductor (SMT 1008), Delevan, 1008-472J

III. LWA Bias-T Prototyping

We have produced a PCB layout to enable us to reliably evaluate the performance of our bias-T with a variety of components (Figure 2). The SMA connectors featured here are only included as a convenience for testing. The basic orthogonal arrangement of L1 and C1 can be readily incorporated into the FEE and ARX regardless of the connectors these subsystems utilize.
Figure 2 Bias-T Evaluation Board

The circuit was evaluated both as a single unit and in the intended configuration with two bias-Ts connected together and transferring power. In the configurations with two biasTs, we supplied 15 VDC at ~240 mA to a power-resistor load (~3.6 Watts dissipated) throughout the test (Figure 3). It was our intention to evaluate the performance of the inductors in the circuit while operating under load conditions representative of a G250R balun (FEE). 3
Figure 3 Characterization of the Bias-T Operating under Load

In the single unit configurations we placed an SMA short on the DC port of the bias-T. It was our intention here to capture the performance of the single bias-T when connected to a DC power supply with very low output impedance. An Agilent N3383A vector network analyzer was used to characterize insertion loss (S21), return loss (S11 and S22), and isolation (S21 between RF and DC ports). A complete set of data is included in the measurements section of this report.

IV. Observations and Recommendations

The performance of the bias-T presented here is comparable to designs that we have already fielded and found to be entirely successful in operation. Within the LWA band, the performance of this circuit compares favorably to costly commercial units. The insertion loss of two of these cascaded bias-Ts was found to be less than 0.2 dB, and the aggregate return loss was found to be least -20 dB. RF coupling from one dipole to another through the DC power network is a serious concern and potential source of indirect mutual coupling. It is important that significant attenuation be presented between the RF ports and the DC supply node of the bias-T. Direct mutual coupling between elements at a spacing of 4m has been demonstrated to be approximately -20 dB, declining ~5 dB for each 2m increase in spacing [2]. After 20 meters the mutual coupling between elements is approximately -60 dB and only gradually diminishes with additional spacing [2]. Consequently, we recommend that feed system coupling be kept well below -80 dB. The most expedient means of accomplishing this goal is the introduction of a capacitive shunt on the DC side of the bias-T. This can be seen on the schematic (Figure 14) as capacitor C2. It is typically a part of good engineering practice to incorporate bypass capacitors (such as C2) at DC supply nodes; we provide measurements here to emphasize the consequences of omitting this component. The isolation between the RF

port and DC port of the bias-T without the capacitive shunt is seen to be inadequate in Figure 11. A definite improvement in isolation is seen when a 0.1 F shunt is added at 4 the DC supply node (Figure 12). With the shunt, at least 60 dB of attenuation between the RF ports and the DC supply port is achieved. An RF signal must run the gauntlet of two of networks consisting of L1 and C2 to traverse the DC feed ports of two bias-Ts and get from one dipole signal chain to another. Greater than 100 dB of attenuation is observed in this configuration (Figure 13). The prototype circuit fits within an 8.3 x 10 mm square on the circuit board; PCB space constraints should not be problematic. We recommend the use of a high-capacity DC power supply to supply power to the FEEs via a bias-T arrangement such as discussed here. This method of power distribution will spare the cost of installing and maintaining a separate power distribution network and eliminate unnecessary complexity in station installations. Because DC power is sourced via the center conductor of shielded coaxial cable, the resulting power network is effectively shielded at no additional cost. Candidate connectors for LWA RF cabling will likely incorporate conductive backshells which will act to further inhibit the introduction of RFI via the power distribution network. By incorporating a bias-T into the ARX, the option of allowing power to the antenna stands to be under control of the LWA Monitor and Control System (MCS) becomes inexpensive and straightforward to implement. This feature could prove valuable for diagnostics, maintenance, and station commissioning.

V. Summary Table Operating Frequency 15 to 115 MHz Isolation 60 dB Minimum Insertion Loss 0.2 dB Maximum VSWR 1.2:1 Maximum Maximum DC Voltage 25 VDC Maximum DC Current 334 mA Size PCB Footprint Approximately 8.3 x 10 mm Parts Cost $0.92
5

VI. Measurements: -30 dBm Power Level for RF Stimulus

1. Measurements of a Single Bias-T
Figure 4 Insertion Loss (S21) through a Single Bias-T with DC Port Shorted Figure 5 Return Loss (S11 and S22) into a Single Bias-T with DC Port Shorted

6
Figure 6 Return Loss (S11 and S22) into a Single Bias-T with DC Port Shorted (Smith)

2. Measurements of a Two Bias-Ts in Cascade Delivering 240 mA to a Load

Figure 7 Insertion Loss through Two Bias-T Supplying 240 mA to a Resistive Load

7
Figure 8 Return Loss (S11 and S22) into Two Cascaded Bias-Ts Delivering 240 mA Figure

Bias-T Design Considerations for the LWA

Brian Hicks and Bill Erickson May 21, 2008

The strawman design document [1] for the LWA suggests that the Front End Electronics (FEE) could be powered through the use of a circuit known as a bias-T. We will discuss how a bias-T operates and present a low cost design optimized for performance within the LWA frequency range of 20 to 80 MHz. We highly recommend the use of bias-T based on discrete components incorporated directly into the LWA FEE and ARX subsystems.

I. Introduction
A bias-T is a three port network designed to provide power to remote devices, such as amplifiers, over the same coaxial cable that RF signals are conveyed. The basic topology, and means of operation, of a bias-T network suitable for LWA applications is given in Figure 1.
Capacitor Passes RF and Blocks DC and Low Frequency (60 Hz) AC Inductor Blocks RF and Passes DC and Low Frequency (60 Hz) AC RF ONLY RF + Power Shunt Capacitor Routes any remaining RF leakage to Ground, Increasing Isolation between RF Ports and DC Supply Port. DC Power Supply C1 C2 L1

Figure 1 Basic Inductive Bias-T

Commercially available bias-Ts are available in both connectorized and surface mount versions. These units are typically expensive ($40 to $100) and, although designed to be wideband, often suffer in performance at frequencies below 50 MHz. By concentrating on an LWA specific bias-T we can achieve a significant cost savings. We will focus on presenting a bias-T circuit that is optimized for operation below 100 MHz and has the ability to supply a single polarization of an LWA FEE (230 mA). We will also deliver a circuit with a compact printed circuit board (PCB) footprint. 2

II. LWA Bias-T Design Considerations

Consisting of one inductor and one capacitor the bias-T circuit is simple, but particular consideration must be given to component selection. Although not a part of the generic bias-T circuit, the shunt capacitor (C2) on the DC port should not be considered optional (Figure 1). Addition of this capacitance substantially increases isolation between the RF ports and the DC supply connection by routing any remaining RF leakage on the supply side of the inductor to ground (Figures 11, 12, and 13). It is especially important that the inductor be rated for the necessary current and should optimally have a minimum self resonant frequency (SRF) that is above the highest LWA frequencies. Throughout the entire LWA band, the inductor must present high impedance, and both capacitors must present low impedance; resonances must be avoided. Based on research and experience, we have selected the following components for consideration and testing:
Capacitors (C1, C2): 0.1 F Ceramic Capacitor (SMT 1208), Panasonic, ECJ-3VB1E104K Inductor (L1): 4.7 H Wirewound Inductor (SMT 1008), Delevan, 1008-472J

III. LWA Bias-T Prototyping

We have produced a PCB layout to enable us to reliably evaluate the performance of our bias-T with a variety of components (Figure 2). The SMA connectors featured here are

only included as a convenience for testing. The basic orthogonal arrangement of L1 and C1 can be readily incorporated into the FEE and ARX regardless of the connectors these subsystems utilize.
Figure 2 Bias-T Evaluation Board

The circuit was evaluated both as a single unit and in the intended configuration with two bias-Ts connected together and transferring power. In the configurations with two biasTs, we supplied 15 VDC at ~240 mA to a power-resistor load (~3.6 Watts dissipated) throughout the test (Figure 3). It was our intention to evaluate the performance of the inductors in the circuit while operating under load conditions representative of a G250R balun (FEE). 3
Figure 3 Characterization of the Bias-T Operating under Load

In the single unit configurations we placed an SMA short on the DC port of the bias-T. It was our intention here to capture the performance of the single bias-T when connected to a DC power supply with very low output impedance. An Agilent N3383A vector network analyzer was used to characterize insertion loss (S21), return loss (S11 and S22), and isolation (S21 between RF and DC ports). A complete set of data is included in the measurements section of this report.

IV. Observations and Recommendations

The performance of the bias-T presented here is comparable to designs that we have already fielded and found to be entirely successful in operation. Within the LWA band, the performance of this circuit compares favorably to costly commercial units. The insertion loss of two of these cascaded bias-Ts was found to be less than 0.2 dB, and the aggregate return loss was found to be least -20 dB. RF coupling from one dipole to another through the DC power network is a serious concern and potential source of indirect mutual coupling. It is important that significant attenuation be presented between the RF ports and the DC supply node of the bias-T. Direct mutual coupling between elements at a spacing of 4m has been demonstrated to be approximately -20 dB, declining ~5 dB for each 2m increase in spacing [2]. After 20 meters the mutual coupling between elements is approximately -60 dB and only gradually diminishes with additional spacing [2]. Consequently, we recommend that feed system coupling be kept well below -80 dB. The most expedient means of accomplishing this goal is the introduction of a capacitive shunt on the DC side of the bias-T. This can be seen on the schematic (Figure 14) as capacitor C2. It is typically a part of good engineering practice to incorporate bypass capacitors (such as C2) at DC supply nodes; we provide measurements here to emphasize the consequences of omitting this component. The isolation between the RF port and DC port of the bias-T without the capacitive shunt is seen to be inadequate in Figure 11. A definite improvement in isolation is seen when a 0.1 F shunt is added at 4 the DC supply node (Figure 12). With the shunt, at least 60 dB of attenuation between the RF ports and the DC supply port is achieved. An RF signal must run the gauntlet of two of networks consisting of L1 and C2 to traverse the DC feed ports of two bias-Ts and get from one dipole signal chain to another. Greater than 100 dB of attenuation is observed in this configuration (Figure 13). The prototype circuit fits within an 8.3 x 10 mm square on the circuit board; PCB space constraints should not be problematic.

We recommend the use of a high-capacity DC power supply to supply power to the FEEs via a bias-T arrangement such as discussed here. This method of power distribution will spare the cost of installing and maintaining a separate power distribution network and eliminate unnecessary complexity in station installations. Because DC power is sourced via the center conductor of shielded coaxial cable, the resulting power network is effectively shielded at no additional cost. Candidate connectors for LWA RF cabling will likely incorporate conductive backshells which will act to further inhibit the introduction of RFI via the power distribution network. By incorporating a bias-T into the ARX, the option of allowing power to the antenna stands to be under control of the LWA Monitor and Control System (MCS) becomes inexpensive and straightforward to implement. This feature could prove valuable for diagnostics, maintenance, and station commissioning.

V. Summary Table Operating Frequency 15 to 115 MHz Isolation 60 dB Minimum Insertion Loss 0.2 dB Maximum VSWR 1.2:1 Maximum Maximum DC Voltage 25 VDC Maximum DC Current 334 mA Size PCB Footprint Approximately 8.3 x 10 mm Parts Cost $0.92
5

VI. Measurements: -30 dBm Power Level for RF Stimulus

1. Measurements of a Single Bias-T
Figure 4 Insertion Loss (S21) through a Single Bias-T with DC Port Shorted Figure 5 Return Loss (S11 and S22) into a Single Bias-T with DC Port Shorted

6
Figure 6 Return Loss (S11 and S22) into a Single Bias-T with DC Port Shorted (Smith)

2. Measurements of a Two Bias-Ts in Cascade Delivering 240 mA to a Load

Figure 7 Insertion Loss through Two Bias-T Supplying 240 mA to a Resistive Load

7
Figure 8 Return Loss (S11 and S22) into Two Cascaded Bias-Ts Delivering 240 mA Figure

Bias-T Design Considerations for the LWA

Brian Hicks and Bill Erickson May 21, 2008

The strawman design document [1] for the LWA suggests that the Front End Electronics (FEE) could be powered through the use of a circuit known as a bias-T. We will discuss how a bias-T operates and present a low cost design optimized for performance within the LWA frequency range of 20 to 80 MHz. We highly recommend the use of bias-T based on discrete components incorporated directly into the LWA FEE and ARX subsystems.

I. Introduction
A bias-T is a three port network designed to provide power to remote devices, such as amplifiers, over the same coaxial cable that RF signals are conveyed. The basic topology, and means of operation, of a bias-T network suitable for LWA applications is given in Figure 1.
Capacitor Passes RF and

Blocks DC and Low Frequency (60 Hz) AC Inductor Blocks RF and Passes DC and Low Frequency (60 Hz) AC RF ONLY RF + Power Shunt Capacitor Routes any remaining RF leakage to Ground, Increasing Isolation between RF Ports and DC Supply Port. DC Power Supply C1 C2 L1

Figure 1 Basic Inductive Bias-T

Commercially available bias-Ts are available in both connectorized and surface mount versions. These units are typically expensive ($40 to $100) and, although designed to be wideband, often suffer in performance at frequencies below 50 MHz. By concentrating on an LWA specific bias-T we can achieve a significant cost savings. We will focus on presenting a bias-T circuit that is optimized for operation below 100 MHz and has the ability to supply a single polarization of an LWA FEE (230 mA). We will also deliver a circuit with a compact printed circuit board (PCB) footprint. 2

II. LWA Bias-T Design Considerations

Consisting of one inductor and one capacitor the bias-T circuit is simple, but particular consideration must be given to component selection. Although not a part of the generic bias-T circuit, the shunt capacitor (C2) on the DC port should not be considered optional (Figure 1). Addition of this capacitance substantially increases isolation between the RF ports and the DC supply connection by routing any remaining RF leakage on the supply side of the inductor to ground (Figures 11, 12, and 13). It is especially important that the inductor be rated for the necessary current and should optimally have a minimum self resonant frequency (SRF) that is above the highest LWA frequencies. Throughout the entire LWA band, the inductor must present high impedance, and both capacitors must present low impedance; resonances must be avoided. Based on research and experience, we have selected the following components for consideration and testing:
Capacitors (C1, C2): 0.1 F Ceramic Capacitor (SMT 1208), Panasonic, ECJ-3VB1E104K Inductor (L1): 4.7 H Wirewound Inductor (SMT 1008), Delevan, 1008-472J

III. LWA Bias-T Prototyping

We have produced a PCB layout to enable us to reliably evaluate the performance of our bias-T with a variety of components (Figure 2). The SMA connectors featured here are only included as a convenience for testing. The basic orthogonal arrangement of L1 and C1 can be readily incorporated into the FEE and ARX regardless of the connectors these subsystems utilize.
Figure 2 Bias-T Evaluation Board

The circuit was evaluated both as a single unit and in the intended configuration with two bias-Ts connected together and transferring power. In the configurations with two biasTs, we supplied 15 VDC at ~240 mA to a power-resistor load (~3.6 Watts dissipated) throughout the test (Figure 3). It was our intention to evaluate the performance of the inductors in the circuit while operating under load conditions representative of a G250R balun (FEE).

3
Figure 3 Characterization of the Bias-T Operating under Load

In the single unit configurations we placed an SMA short on the DC port of the bias-T. It was our intention here to capture the performance of the single bias-T when connected to a DC power supply with very low output impedance. An Agilent N3383A vector network analyzer was used to characterize insertion loss (S21), return loss (S11 and S22), and isolation (S21 between RF and DC ports). A complete set of data is included in the measurements section of this report.

IV. Observations and Recommendations

The performance of the bias-T presented here is comparable to designs that we have already fielded and found to be entirely successful in operation. Within the LWA band, the performance of this circuit compares favorably to costly commercial units. The insertion loss of two of these cascaded bias-Ts was found to be less than 0.2 dB, and the aggregate return loss was found to be least -20 dB. RF coupling from one dipole to another through the DC power network is a serious concern and potential source of indirect mutual coupling. It is important that significant attenuation be presented between the RF ports and the DC supply node of the bias-T. Direct mutual coupling between elements at a spacing of 4m has been demonstrated to be approximately -20 dB, declining ~5 dB for each 2m increase in spacing [2]. After 20 meters the mutual coupling between elements is approximately -60 dB and only gradually diminishes with additional spacing [2]. Consequently, we recommend that feed system coupling be kept well below -80 dB. The most expedient means of accomplishing this goal is the introduction of a capacitive shunt on the DC side of the bias-T. This can be seen on the schematic (Figure 14) as capacitor C2. It is typically a part of good engineering practice to incorporate bypass capacitors (such as C2) at DC supply nodes; we provide measurements here to emphasize the consequences of omitting this component. The isolation between the RF port and DC port of the bias-T without the capacitive shunt is seen to be inadequate in Figure 11. A definite improvement in isolation is seen when a 0.1 F shunt is added at 4 the DC supply node (Figure 12). With the shunt, at least 60 dB of attenuation between the RF ports and the DC supply port is achieved. An RF signal must run the gauntlet of two of networks consisting of L1 and C2 to traverse the DC feed ports of two bias-Ts and get from one dipole signal chain to another. Greater than 100 dB of attenuation is observed in this configuration (Figure 13). The prototype circuit fits within an 8.3 x 10 mm square on the circuit board; PCB space constraints should not be problematic. We recommend the use of a high-capacity DC power supply to supply power to the FEEs via a bias-T arrangement such as discussed here. This method of power distribution will spare the cost of installing and maintaining a separate power distribution network and eliminate unnecessary complexity in station installations. Because DC power is sourced via the center conductor of shielded coaxial cable, the resulting power network is effectively shielded at no additional cost. Candidate connectors for LWA RF cabling will likely incorporate conductive backshells which will act to further inhibit the introduction of RFI via the power distribution network. By incorporating a bias-T into the ARX, the option of allowing power to the antenna

stands to be under control of the LWA Monitor and Control System (MCS) becomes inexpensive and straightforward to implement. This feature could prove valuable for diagnostics, maintenance, and station commissioning.

V. Summary Table Operating Frequency 15 to 115 MHz Isolation 60 dB Minimum Insertion Loss 0.2 dB Maximum VSWR 1.2:1 Maximum Maximum DC Voltage 25 VDC Maximum DC Current 334 mA Size PCB Footprint Approximately 8.3 x 10 mm Parts Cost $0.92
5

VI. Measurements: -30 dBm Power Level for RF Stimulus

1. Measurements of a Single Bias-T
Figure 4 Insertion Loss (S21) through a Single Bias-T with DC Port Shorted Figure 5 Return Loss (S11 and S22) into a Single Bias-T with DC Port Shorted

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Figure 6 Return Loss (S11 and S22) into a Single Bias-T with DC Port Shorted (Smith)

2. Measurements of a Two Bias-Ts in Cascade Delivering 240 mA to a Load

Figure 7 Insertion Loss through Two Bias-T Supplying 240 mA to a Resistive Load

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Figure 8 Return Loss (S11 and S22) into Two Cascaded Bias-Ts Delivering 240 mA Figure