LED Analysis Semicon Taiwan 2011

LED Analysis at EAG
Tim Chang and Gary Mount
Specialists in Materials Characterization
EAG Background in Semi and LED

Established in 1978, Silicon Valley California EAG Taiwan established in 2000 Now over 15 locations in 7 countries 30+ analytical techniques Over 150 instruments Over 300 scientists and engineers Career scientists, many with Ph.D. Foundation in semiconductor industry Very active in LED space
Process monitoring and R&D analysis for 20 years.
Copyright 2011 Evans Analytical Group
MOCVD Reactor Capacity by Region
Courtesy of Yole Development
Barriers to Adoption
price
5x price
40x price
Costs for LED Light Source
Source: US Department of Energy

MOCVD Epitaxy Big Effect on Cost : Big Effect on Performance

Alternative Substrates: #2: Si Epitaxy: Cluster tools New Epi technologies. Large Diameter Substrates: 4, 6, 8. Lithography: Dedicated tools, higher throughput. Epitaxy MOCVD: Higher yields and throughputs Improved material quality.
Manufacturing Cost
Wafer Level Packaging: Silicon TSC, Wafer level optics.
Testing and Binning: Wafer level Higher throughputs.
Phosphors: Conversion Phosphors: Quantum dots efficiency, Color rendering phosphors IP Free phosphors. Substrate Separation: Laser Lift Off, other separation techniques.
Mirrors: Resonant Cavities.
Die Singulation: Increased throughputs and yields. Encapsulation Materials and Optics: Ageing and optical properties. Mirrors: Improve reflectivity electrical properties.
Alternative Substrate: #1: GaN, AnO, Si, Engineered substrates.
Thermal Management: New materials for packaging.
Contacts & Electrodes: Transparent contacts / Electrode materials and patterns.
Contacts & Electrodes: p to n layer VIAS.
Surface Texture: Patterned substrates/ Roughening.
Surface Texture: Photonic and Quasi Photonic Crystals.
Current Droop: Green Gap LED Structures.

LED Performance
6
MOCVD Reactors
Its somewhat of an art [operating an MOCVD reactor]. You cant make decent stuff [LEDs] without epitaxial active layers. Every machine has its own identity. You need R&D."
Aldo Kamper, president and CEO of Osram Opto Semiconductor Interview with Greentechsolar: March 7, 2011
Testing and Binning

Each part is binned for 3 parameters Color Forward Voltage Brightness
Flux
Example: 8 color bins 4 Vf bins 3 flux bins
Color
Forward Voltage
For a customer that wants warm white, highest brightness and mid-range Vf, only 5% of the bin space qualifies.
A lot of this variability is created at the epitaxy stage: Within Wafer Wafer to Wafer Run to Run Reactor to Reactor
LED Evaluation
Binning can only be done by testing LED performance for finished devices. Much of the LED performance is determined by the device microstructure as grown by MOCVD epitaxy.
MOCVD is really the weak point in LED manufacturing. Good die yields after binning are about 35% industrywide. Manufacturers really need some feedback loop on actual dopant concentration homogeneity to fine tune their tools. (Source: Yole Development)
SIMS is an excellent way to monitor epitaxy microstructure and it can be done before any devices are made!
EAG Services for LED

EAG Taiwan Can Provide: Process Monitoring Research & Development Failure Analysis Construction Analysis (Reverse Engineering)
10
Process Characterization and Monitoring

Characterizing the performance of MOCVD reactors using SIMS is one of our most popular analysis. SIMS is a powerful process characterization tool. We use SIMS depth profiling to look at layer structure and thickness, n and p type doping levels in all layers, and contaminants in all layers. Customers can compare center and edge growth on a wafer, can compare wafer to wafer, compare wafers from the center and edge of the platen, compare lot to lot from the same reactor, and compare reactors. As wafers get larger these comparative measurements will only become more important.
11
Si and Mg Profiles
Measure Peak Concentration Average Concentration
Layer Thickness
12
Long Term Precision for Si in GaN
13
Value of SIMS for Process Monitoring

We currently have 2 major LED manufacturers who use EAG SIMS for MOCVD process monitoring. EVERY COMPANY THAT HAS USED SIMS FOR MOCVD PROCESS MONITORING IN A SERIOUS WAY HAS CONTINUED TO DO SO. a very strong endorsement of the value of the measurements.
14

EAG Taiwan Can Provide: Process Monitoring Research & Development Failure Analysis Construction Analysis
15
Research & Development

SIMS: Dopant and contaminant concentration and distribution TEM: Layer thickness / uniformity > primarily QW region Growth quality defects dislocations type and number QW interface sharpness STEM: Layer composition EBIC: Junction and junction defects
16
III-V Layer Structure

1E+21 1E+06
InP HBT
1E+20 1E+05
CONCENTRATION (atoms/cc)
Ga->
1E+19
The layer structure can be seen and thickness measured

Counts per Second
InGaP InP InP InGaP InP InGaP InGaP Si: 3E19 Si: 3E19 undoped C: 3E19 undoped C: 3E19 undoped
1E+04
1E+18 1E+03 1E+17
1E+02 1E+16
1E+15
1E+01
InGaP
Si: 4E18
1E+14 0 0.5 1 1.5 2 2.5 3
1E+00
InP
substrate undoped
DEPTH (microns)
17
III-V Dopants
1E+21 1E+06
InP HBT
1E+20
Si
C Ga->
1E+05
Dopant concentrations can be profiled and quantified in multiple layers.

Counts per Second
1E+19 1E+04
1E+18 1E+03 1E+17
1E+02 1E+16
1E+15
1E+01
InGaP
Si: 4E18
1E+14 0 0.5 1 1.5 2 2.5 3
1E+00
InP
substrate undoped
DEPTH (microns)
18
III-V Contaminants
1E+21 1E+06
InP HBT
1E+20 1E+05
Ga->
1E+19
Performance destroying contaminants can be measured and quantified

Counts per Second
1E+04
1E+18 1E+03 1E+17
H
1E+02
1E+16
1E+15
1E+01
InGaP
Si: 4E18
1E+14 0 0.5 1 1.5 2 2.5 3
1E+00
InP
substrate undoped
DEPTH (microns)
19
SIMS for Structure and Doping

p-GaN
1E+21
p-AlGaN
InGaN MQWs
n-GaN
Mg
1E+20
In (a.u.)
C NC TRA N (atom O EN TIO s/cc) Concentration (atoms/cm3)
1E+19
Si Al (a.u.)
1E+18
1E+17
Powerful analysis tool

Depth profiling dopants and impurities in III-V heterostructures Surface, layer, substrate and interface
0
1E+16
1E+15
Stoichiometry in some cases

0.1 0.2 0.3 0.4
0.5
0.6
0.7
0.8
DEPTH (microns) Depth (micron)
20
Quantum Well Dopant

PCOR-SIMSSM
5.0E18
0.100
Si CONCENTRATION (at/cm3)
In Ga,In Atomic Fraction

4.0E18 0.080
3.0E18
0.060
Si
2.0E18 0.040
1.0E18
0.020
0 0 50 100 150
0 200
DEPTH (nm)
High depth resolution SIMS can reveal the doping profile within the quantum well. Best quantification is achieved using PCOR-SIMS, a protocol that provides accurate quantification in all matrix layers.
Analysis with high depth resolution SIMS
21

22
Example: Commercial GaN LED Dislocation Density XS & PV

1
XS
2 1 2 3
PV
3 1 2 3
23
Rapid Typing of Dislocations

The character of dislocations can be quickly determined using STEM imaging. By utilizing specific sample tilts, threading dislocations can be identified as having screw, edge, or mixed character.
24
Quantum Well and Superlattice

Quantum well and superlattice layer thicknesses can be measured using high resolution TEM imaging.
1.11 nm
2.71 nm
25

26
Quantum Well Composition

1 2 3 4
STEM/EDS (at%) Location 1 2 3 4 5 Al 9 In 6 3 2
Epi-layer Structure
STEM/EDS can determine composition of the quantum well layers with 2-3nm spot size.
27

28
Finding Defects using EBIC

EBIC
Defect
SEM
Electron Beam Induced Current (EBIC) imaging is compared with standard SEM imaging. An EBIC bright spot reveals a defect that is not seen in standard SEM.
29
Analysis of EBIC Discovered Defect

A closer view of the defect site shows large and small bright spots in the EBIC image. A cross section was prepared using FIB at the red line. A TEM image of the defect cross-section is shown aligned on the same scale as the EBIC image. A pit defect is present under the small bright spot Magnifying the TEM cross-section image vertically reveals a disruption in the quantum well epi-layer growth. The EBIC image is brighter where the quantum well is closer to the ITO layer.
30
Locate Junction by EBIC

Top and bottom contacts are required. A current is passed through the sample. An electron beam is rastered over the sample and where it touches the electrical junction, current is induced.
31

EAG Taiwan Can Provide: Process Monitoring Research & Development Failure Analysis Construction Analysis
32
Failure Analysis
Mainly chip but also some full package RTX: delaminations / cracks / voids / line breaks OBIRCH: defect localization FIB : cross-section and find defect STEM / Auger: FIB follow up for defect ID composition metal migration > Auger works well in FIB crater. GC-MS: Gas bubbles inside package.
33
Package and Wire Integrity
Real Time X-ray (RTX) looks into the package providing images in real time. Examination of this LED reveals an open wire.
34
Curve trace results show a difference when compared with the good device:
Bad
Good
Reverse Bias
35
Defect Detection by OBIRCH

OBIRCH reveals a defect location. We can use the OBIRCH image to locate the defect for Dual Beam FIB.
36
Defect Analysis by Dual Beam FIB

Localized defect from OBIRCH
After localizing by OBIRCH the defect is cross-sectioned by FIB and imaged with SEM. Examples: Metal migration FIB cross-section and investigation by Auger. Voids FIB cross-section and investigation by SEM. Particles surface or FIB cross-section and investigation depending on size and possible organic content Cracks FIB cross-section and investigation by SEM Delaminations FIB cross-section and investigation by SEM
37
Failure Analysis
Mainly chip but also some full package RTX: delaminations / cracks / voids / line breaks OBIRCH: defect localization FIB : cross-section and find defect STEM / Auger: FIB follow up for defect ID composition metal migration > Auger works well in FIB crater. GC-MS: Gas bubbles inside package.
38
LED Discoloration
Gas bubble that appear inside LED packaging can be extracted and analyzed by GC-MS.
39
EAG Service Offerings

EAG Taiwan Can Provide: Process Monitoring Research & Development Failure Analysis Construction Analysis (Reverse Engineering)
40
FTIR Identification of Polymer Materials

LED Encapsulant 100 3523
1382
95
90 2868
85 2950
Package material in this case identified as a modified epoxy.
1608
1129
1455
1086
1041
75
70
65
60
3500
3000
2500 Wavenumbers (cm-1)
2000
1736
1500
1509
1182
%T
80
1301
1235
1000
830
761
41
Construction Analysis Package Level

Measurement of the materials, structure, composition and doping profiles that comprise an LED
phosphors
wire chip reflector
Structure
Materials and layout of the package and support structures can be examined in cross-section using SEM imaging and EDS analysis.
heat-sink/support
Phosphors
SiO2 Au GaN Gd doped YAG Sapphire
Materials identification in and around the LED chip includes and evaluation of the phosphors. In this case STEM/EDS identified the phosphor as Gd doped YAG. Lattice imaging and d-space measurements confirm YAG identification.
Silicone
Cu
Ag
42
Construction Analysis Die Level

100 90
Au W
N-contact W Rh
Au
80
W Rh ITO
O In ITO
n contact
Auger depth profile
70
60 Atomic Concentration (%)
GaN
Ga N
50
40
n and p contact evaluation by Auger depth profiling
30
20
10
Sn
Contacts
0 100
50
100
150 Sputter Time (min)
200
250
300
350
Au
90
Au
W
Rh
80
W Rh ITO
ITO In
p contact
Auger depth profile
P-contact
70
SiO2
O
GaN
Ga N
60 Atomic Concentration (%)
50
Au
40
Si
30
Rh ITO
20
SiO2
10
Sn
0 350
TEM cross-section of p contact
43
Quantum Well Composition

1 2 3 4
STEM/EDS (at%) Location 1 2 3 4 5 Al 9 In 6 3 2
Epi-layer Structure
STEM/EDS can determine composition of the quantum well layers with 2-3nm spot size.
44
Construction Analysis Die Level

Deprocessed
Polished
Decapped LED may need to be polished to remove leads. The LED may need to be etched to remove passivation prior to SIMS analysis.
Mg
1E+20 Concentration (Atoms/cm3) 1E+21
Al (intensity)
1E+19 1E+18 1E+17
Si
1E+20
1E+19
Crater
1E+18 1E+16 1E+15 0 200 400 600 800 1E+17 1000
Depth (nm)
INTENSITY (arbitrary units)
45
Summary
Why Use EAG Taiwan?

1. Experts in LED Analysis 2. Special Instruments for LED 3. Fast Turnaround Time 4. All Types of LED Analysis
46
End
Specialists in Materials Characterization

LED Analysis Semicon Taiwan 2011

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LED Analysis at EAG

Tim Chang and Gary Mount

Specialists in Materials Characterization

EAG Background in Semi and LED

Copyright 2011 Evans Analytical Group

MOCVD Reactor Capacity by Region

Courtesy of Yole Development

Copyright 2011 Evans Analytical Group

Copyright 2011 Evans Analytical Group

Costs for LED Light Source

Source: US Department of Energy

MOCVD Epitaxy Big Effect on Cost : Big Effect on Performance

Wafer Level Packaging: Silicon TSC, Wafer level optics.

Testing and Binning: Wafer level Higher throughputs.

Mirrors: Resonant Cavities.

Alternative Substrate: #1: GaN, AnO, Si, Engineered substrates.

Thermal Management: New materials for packaging.

Contacts & Electrodes: Transparent contacts / Electrode materials and patterns.

Contacts & Electrodes: p to n layer VIAS.

Surface Texture: Patterned substrates/ Roughening.

Surface Texture: Photonic and Quasi Photonic Crystals.

Current Droop: Green Gap LED Structures.

Courtesy of Yole Development

Copyright 2011 Evans Analytical Group

Testing and Binning

Example: 8 color bins 4 Vf bins 3 flux bins

Copyright 2011 Evans Analytical Group

EAG Services for LED

Copyright 2011 Evans Analytical Group

Process Characterization and Monitoring

Copyright 2011 Evans Analytical Group

Long Term Precision for Si in GaN

Copyright 2011 Evans Analytical Group

Value of SIMS for Process Monitoring

Copyright 2011 Evans Analytical Group

EAG Services for LED

Copyright 2011 Evans Analytical Group

Research & Development

Copyright 2011 Evans Analytical Group

III-V Layer Structure

The layer structure can be seen and thickness measured

1E+18 1E+03 1E+17

1E+14 0 0.5 1 1.5 2 2.5 3

Dopant concentrations can be profiled and quantified in multiple layers.

1E+18 1E+03 1E+17

1E+14 0 0.5 1 1.5 2 2.5 3

Performance destroying contaminants can be measured and quantified

1E+18 1E+03 1E+17

1E+14 0 0.5 1 1.5 2 2.5 3

SIMS for Structure and Doping

C NC TRA N (atom O EN TIO s/cc) Concentration (atoms/cm3)

Powerful analysis tool

Stoichiometry in some cases

DEPTH (microns) Depth (micron)

Copyright 2011 Evans Analytical Group

Quantum Well Dopant

In Ga,In Atomic Fraction

Analysis with high depth resolution SIMS

Copyright 2011 Evans Analytical Group

Research & Development

Copyright 2011 Evans Analytical Group

Example: Commercial GaN LED Dislocation Density XS & PV