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The CHB inverter introduced above can be extended to any number of voltage levels. The per-phase diagram of seven- and nine-level inverters are depicted in Fig. (b)&(c), where the seven-level inverter has three H-bridge cells in cascade while the nine-level has four cells in series. The total number of active switches (IGBTs) used in the CHB inverters can be calculated by Nsw = 6(m 1) In general, a multilevel inverter with m voltage levels requires (m 1) triangular carriers. In the phase-shifted multicarrier modulation, all the triangular carriers have the same frequency and the same peak-to-peak amplitude, but there is a phase shift between any two adjacent carrier waves, given by
Figure 7.4-1 shows the principle of the phase-shifted modulation for a seven level CHB inverter, where six triangular carriers are required with a 60 phase displacement between any two adjacent carriers. Of the three-phase sinusoidal modulating waves, only the phase A modulating wave Vma is plotted for simplicity. The carriers vcr1, vcr2, and vcr3 are used to generate gatings for the upper switches S11, S12, and S13 in the left legs of power cells H1, H2, and H3 in Fig. 7.3-2a, respectively.The other three carriers, vcr1, vcr2 and vcr3, which are 180 out of phase withvcr1, vcr2 and vcr3, respectively,
produce the gatings for the upper switches S31, S32,and S33 in the right legs of the H-bridge cells. The gate signals for all the lower switches in the H-bridge legs are not shown since these switches operate in a complementary manner with respect to their corresponding upper switches.
Figure (a) Phase-shifted PWM for seven-level CHB inverters (mf = 3, ma = 0.8, fm = 60 Hz, and fcr = 180 Hz).
The inverter phase voltage can be found from VAN = vH1 + vH2 + vH3 where vH1, vH2, and vH3 are the output voltages of cells H1, H2, and H3, respectively. It is clear that the inverter phase voltage waveform is formed by seven voltage steps: +3E, 2E, E, 0, E, 2E, and 3E.
7 level simulation
S i n e W av eR . >= <= g C g C vc r1 .1 m E m <= .1 1 >= vc r-1 S i n e W av eR 1 .6
s11
s13
vc r2
>= .3 C C <= g g + - v
.2
s14
s12
.10
.9
m m
s21
s23
E
0.
vc r3
.4 >= .5 <=
.15
g C g m m
vc r-3
.8 <= .1 3 >=
s24
s22
E
S i n e W av eR 3 S i n e W av eR 2
m g m
s31
s33
E
.14 s34
S co p e2
s32
E
S co p e1 S i n e W av eR 4
C ontinuous powergui
S i n e W av e1
Vl T o Wo rksp ac e1
.1 6
vc r4
m g
<=
s1
s3
E
vc r5
>= .2 5 C C <= g g + v -
.2 4
s4
s2
.18
.31
m m
s5
s7
E
0.1
vc r6
.2 6 >= .2 7 <=
.23
g C g m m
vc r-6
.3 0 <= .2 1 >=
s8
s6
E
g m g m
s9
s15
E
s16
s10
E
.22
S i n e W av e4
.3 2 >=
S i n e W av e5 .4 4 <=
.3 3 g C g vc r7 m m <=
s17
s26
E
.3 5 vc r-7 >=
vc r8
>= .4 1 C C <= g g + v -
.4 0
s27
s25
.34
.47
m m
s28
s30
E
0.2
vc r9
.4 2 >= .4 3 <=
.39
g C g m m
vc r-9
.4 6 <= .3 7 >=
s35
s29
E
g m g m
s36
s19
E
.38
g C m
s20
s18
E
OUTPUT
0.8
0.6
0.4
0.2
a m p litu d e
-0.2
-0.4
-0.6
-0.8
-1
0.2
0.4
0.6
0.8
1 tim e
1.2
1.4
1.6
1.8 x 10
2
4
Output Phase Voltage for Seven Level Inverter 300 200 100 V o lta g e 0 -100 -200 -300 0 0.2 0.4 0.6 0.8 1 Time 1.2 1.4 1.6 1.8 x 10 2
4
Output Line V oltage for Seven Level Inverter 500 400 300 200 100 V o lta g e 0 -100 -200 -300 -400 -500 0 0.2 0.4 0.6 0.8 1 Time 1.2 1.4 1.6 1.8 x 10 2
4
9 LEVEL SIMULATION
Cg
IGBT/Diode6
Sine Wave m E <= Relational Operator NO T Logic al Operator <= Repeating Sequence3 Relational Operator1 <= Repeating Sequence1 Relational Operator2 NO T Logic al Operator1
IGBT/Diode5
m E
Repeating Sequence2
Vdc1
Cg
IGBT/Diode3
m E
IGBT/Diode4
m E
g C
Cg
Cg
m E
Logic al Operator2
Vdc2
g C NO T Logic al Operator3
m E
NO T
IGBT/Diode10
IGBT/Diode9
Cg
+ - v Cg
IGBT/Diode7
m E
IGBT/Diode8
m E
Vab1
IGBT/Diode14
m E
IGBT/Diode13
m E Sine Wave3 g C
Vdc3
>= Repeating Sequence6 Relational Operator5 >= Repeating Sequence4 Relational Operator6 >= Repeating Sequence8 Relational Operator7
IGBT/Diode11
m E
IGBT/Diode12
Cg m E
Cg
g C
Sc ope4
IGBT/Diode16
IGBT/Diode15
m E m E Sine Wave4
Vdc4
Cg
IGBT/Diode1
m E
IGBT/Diode2
m E
g C
Cg
Continuous
Sine Wave5
powergui
Cg
IGBT/Diode45
Sine Wave2 <= Relational Operator16 NO T Logic al Operator16 <= m E Repeating Sequence19 Relational Operator17 <= Cg g C NO T Logic al Operator17
IGBT/Diode44
m E m E m E g C
Repeating Sequence18 Cg Cg
Vdc9
Cg
IGBT/Diode29
Sine Wave1 m E <= Relational Operator8 NO T Logic al Operator8 <= Repeating Sequence11 Relational Operator9 <= Repeating Sequence9 Relational Operator10 NO T Logic al Operator9
IGBT/Diode28
IGBT/Diode42
IGBT/Diode43
m E
Repeating Sequence10
Vdc5
Cg
Cg
IGBT/Diode26
m E
IGBT/Diode27
m E
Repeating Sequence17
Relational Operator18
m E
Logic al Operator18
Vdc10
g C NO T Logic al Operator19
m E
NO T
IGBT/Diode34
IGBT/Diode48
Cg
+ - v Cg
m E
Logic al Operator10
m E
NO T
IGBT/Diode18
IGBT/Diode32
IGBT/Diode46
m E
IGBT/Diode47
m E
R2
Vab3
>= g C
Vdc6
g C Cg NO T Logic al Operator11
+ -v
m E
IGBT/Diode30
IGBT/Diode31
m E m E
R1
Vab2
>= Repeating Sequence22 Relational Operator21 >= Repeating Sequence20 Relational Operator22 >=
Logic al Operator20
Vdc11
g C
m E
m E
Repeating Sequence13
Relational Operator12
g C
g C
IGBT/Diode22 Vdc7
IGBT/Diode21
IGBT/Diode35
m E
IGBT/Diode36
g C m E
Cg
m E
Repeating Sequence21
Relational Operator20
NO T
IGBT/Diode38
IGBT/Diode37
g C
IGBT/Diode40
IGBT/Diode39
m E m E g C
>= Repeating Sequence14 Relational Operator13 >= Repeating Sequence12 Relational Operator14 >= Repeating Sequence16 Relational Operator15
IGBT/Diode19
IGBT/Diode20
m E Cg m E Cg
g C
Vdc12 IGBT/Diode33
Cg
Cg
m E
IGBT/Diode24
m E
IGBT/Diode23
m E
Repeating Sequence24
Relational Operator23
IGBT/Diode41
m E
g C
Continuous powergui2
Vdc8
Cg
IGBT/Diode17
m E
IGBT/Diode25
m E
g C
Continuous powergui1
OUTPUT
0.8
0.6
0.4
0.2 a m p lit u d e
-0.2
-0.4
-0.6
-0.8
-1
0.2
0.4
0.6
0.8
1 time
1.2
1.4
1.6
1.8
2 x 10 4
Outp ut Phase Voltage fo r Nine L evel Inverter 600 400 200 V o lta g e 0 -200 -400 -600 0 0.2 0.4 0.6 0.8 1 Tim e 1.2 1.4 1.6 1.8 x 10 2
4
500
V o lt a g e
-500
-1000 0 0.2 0.4 0.6 0.8 1 Time 1.2 1.4 1.6 1.8 x 10 2
4