CIRCUITS AND DEVICES LAB MANUAL

Circuit diagram
1. krichoffs current law:
Kirchoff`s current law
1.0k 3.3k

5V

4.7 K

Practical measurement:
(0-20)mA
1.0k

(0-10)mA
3.3k

4.7 K +

5V

A
-

(0-10)mA

Tabulation:

Voltage

Total current I(mA)

I1(mA)

I2(mA)

CIRCUITS AND DEVICES LAB MANUAL

1.VERIFICATION OF KVL & KCL AIM: To verify (i) (i) kirchoffs current law (ii) kirchoffs voltage law

KIRCHOFFS CURRENT LAW:

COMPONENTS REQUIRED: Sl.No 1 2 3 4 5 components RPS Resistor Ammeter Bread board Connecting wires Range (0-15)V 1 K (0-10)mA ----------Quantity 1 3 3 1 few

THEORY: krichoffs current law: The algebraic sum of the currents entering in any node is Zero. The law represents the mathematical statement of the fact change cannot accumulate at a node. A node is not a circuit element and it certainly cannot store destroy (or) generate charge. Hence the current must sum to zero. A hydraulic analog sum is zero. For example consider three water pipes joined pn the shape of Y. we defined free currents as following into each of 3 pipes. If we insists that what is always PROCEDURE: 1. 2. 3. 4. 5. 6. Connections are made as per the circuit diagram. Check your connections before switch on the supply. Vary the regulated supply. Measure the current using ammeter. Note the readings in the tabulation. Compare the observation reading to theoretical value.

CIRCUITS AND DEVICES LAB MANUAL

Circuit diagram Krichoffs voltage law:

Kirchoff`s voltage law
1.0k 3.3k 2.7k

V1 5V

V2

V3

Practical measurement:
Practical measurement
1.0k 3.3k 2.7k

+ 5V

V (0-5)V

(0-5)V

(0-5)V

Tabulation: Voltage (V) V1 (volts) V2 (volts) V3 (volts)

CIRCUITS AND DEVICES LAB MANUAL

ii) KIRCHOFFS VOLTAGE LAW: COMPONENTS REQUIRED: Sl.No 1 2 3 4 5 components RPS Resistor voltmeter Bread board Connecting wires Range (0-15)V 1K,2.2K,3.3K (0-20)V ----------Quantity 1 Each 1 3 1 few

THEORY: (i) krichoffs voltage law The algebraic sum of the voltage around any closed path is zero. PROCEDURE: 1. Connections are made as per the circuit diagram. 2. Check your connections before switch on the supply. 3. Vary the regulated supply. 4. Measure the voltage using voltmeter. 5. Note the readings in the tabulation. 6. Compare the observation reading to theoretical value.

RESULT: Thus the kirchoffs current law and voltage law were verified.

CIRCUITS AND DEVICES LAB MANUAL

Thevenin

C ir c u it d ia g r a m
1 .0 k 3 .3 k

T o fin dt h R
1 .0 k 3 .3 k

XMM1 5V
2 .2 k 2 .7 k

Rth

2 .7 k

T o fin dt h V
1 .0 k 3 .3 k

T o fin L I d
1 .0 k 3 .3 k

5V

2 .7 k

5V

2 .2 k

2 .7 k

(0 -5 )m A

Equivalent ciruitI 1 R th RL V th
2.2k

(0-5)mA

CIRCUITS AND DEVICES LAB MANUAL

2.a) VERIFICATION OF THEVENINS THEOREM AIM: To verify Thevenins theorem and to find the current flowing through the load resistance. COMPONENTS REQUIRED: Sl.No 1 2 3 4 5 6 components RPS Resistor Ammeter (0-5)mA voltmeter (0-5)V Bread board -----Connecting wires -----Range (0-15)V 1K,2.2K,3.3K 2,7K Quantity 1 Each 1

1 1 1 few

THEORY: Thevenin`s theorem: Any linear active network with output terminals can be replaced by a single voltage source Vth in series with a single impedance Zth. Vth is the Thevenin`s voltage. It is the voltage between the terminals on open circuit condition, Hence it is called open circuit voltage denoted by Voc. Zth is called Thevennin`s impedance. It is the driving point impedance at the terminals when all internal sources are set to zero too. If a load impedance ZL is connected across output terminals, we can find the current through it IL = Vth/ (Zth + ZL). PROCEDURE: 1. 2. 3. 4. 5. 6. 7. 8. Connections are made as per the circuit diagram. Check your connections before switch on the supply. Find the Thevenins voltage (or) open circuit voltage. Replace voltage source by internal resistor. Determine the Thevenins resistance. Find IL by using Thevenins formula. Compare the observation reading to theoretical value. switch off the supply 6

CIRCUITS AND DEVICES LAB MANUAL

9. Disconnect the circuit. Tabulation

Vth

Rth

IL(mA)

theoretical practical theoretical practical theoretical practical

Calculation:

RESULT: Thus the Thevenins theorem was verified. Theoretical: Vth = Rth = IL = Practical: Vth = Rth = IL = 7

CIRCUITS AND DEVICES LAB MANUAL

Circuit diagram
Norton
10K 8K To find I sc 10K 8K I sc

5V

4.7K

5.6K

5V

4.7K

(0-500)mA

XMM1 To find R th 10K 8K R th 5V 4.7K

To find IL 10K 8K

4.7K

5.6K

(0-500)mA

Norton`s Equivalent circuit

Isc

Rth

RL =5.6K

A -

(0-500)mA

CIRCUITS AND DEVICES LAB MANUAL

2.b) NORTONS THEOERM AIM: To verify Nortons theorem and to determine the current flow through the load resistance. COMPONENTS REQUIRED: Sl.No 1 2 3 4 5 components RPS Resistor Ammeter (0-10)mA,mc (0-5)mc,mc Bread board -----Connecting wires -----Nortons theorem: Any linear active network with output terminals can be replaced by a single current source. Isc in parallel with a single impedance Zth. Isc is the current through the terminals of the active network when shorted. Zth is called Thevennin`s impedance. Current through RL= Isc Zth/( Zth+ZL) few Range (0-15)V 10K,5.6K,8.2K 6K Quantity 1 Each 1 1 1 1

PROCEDURE: 1. Connections are made as per the circuit diagram. 2. Check your connections before switch on the supply. 3. Find the Nortons current (or) short circuit current in load resistance. 4. Replace voltage source by internal resistor. 5. Determine the equivalents resistance. 6. Find IL by using Nortons formula. 7. Compare the observation reading to theoretical value. 8. switch off the supply 9. Disconnect the circuit. 9

CIRCUITS AND DEVICES LAB MANUAL

Tabulation:
Theoretical Practical

I sc

R th

I sc

R th

Calculation:

RESULT: Thus the Nortons theorem was verified. Theoretical: Isc = Rth = IL = Practical: Isc = Rth = IL =

10

CIRCUITS AND DEVICES LAB MANUAL

Circuit diagram Superposition

To find I 1 when 12V source is acting alone 220 ohm 470 ohm 220 ohm 470 ohm

12V

1K

10 V

12V

1K

(0-20)mA

TO find I When 10V source is acting alone

2

To find I when two sources are acting 220 ohm 470 ohm

220 ohm

470 ohm

10 V

1K

12V

10 V

1K

+
(0-20)mA

(0-20)mA

Tabulation:

V(volt)

I1(mA)

I2(mA)

I(mA)

V 1

V 2

theoretical practical theoretical practical theoretical practical

Calculation: 11

CIRCUITS AND DEVICES LAB MANUAL

3. SUPER POSITION THEOREM AIM: To verify superposition theorem and determine the current following through the load resistance. COMPONENTS REQUIRED: Sl.No 1 2 3 5 6 components RPS Resistor Ammeter Bread board Connecting wires Range (0-15)V 1K,220,470 (0-1)mA,mc (0-5)mA mc ----------Quantity 1 Each 1 1 1 1 few

Superposition theorem In a linear circuit containing more than one source, the current that flows at any point or the voltage that exists between any two points is the algebraic sum of the currents or the voltages that would have been produced by each source taken separately with all other sources removed. PROCEDURE: 1. 2. 3. 4. 5. 6. 7. 8. 9. Connections are made as per the circuit diagram. Check your connections before switch on the supply. Determine the current through the load resistance. Now one of the sources is shorted and the current flowing through the resistance IL measured by ammeter. Similarly, the other source is shorted and the current flowing through the resistance IL measured by ammeter. Compare the value obtained with the sum of I1&I2 should equal to I Compare the observation reading to theoretical value. switch off the supply Disconnect the circuit.

RESULT: Thus the superposition theorem was verified. 12

CIRCUITS AND DEVICES LAB MANUAL

13

CIRCUITS AND DEVICES LAB MANUAL

4.a) VERIFICATION OF MAXIMUM POWER TRANSFER THEOREM AIM: To find the value of resistance RL in which maximum power is transferred to the load resistance. COMPONENTS REQUIRED: Sl.No 1 2 3 4 5 6 components Resistor Ammeter Bread board Connecting wires RPS DRB Range 1K,2.2 K (0-10) mA ---------(0-30)V (0-10)K Quantity 1 1 1 Few 1 1

Maximum power transfer theorem: Maximum power transfer to the load resistor occurs when it has a value equal to the resistance of the network looking back at it from the load terminals. PROCEDURE: 1. Connections are given as per the circuit diagram. 2. By giving various values of the resistance in DRB, note the ammeter reading. 3. Calculate the power and plot the power Vs resistance graph. 4. Note the maximum power point corresponding resistance from the graph. RESULT: Thus the value of unknown resistance in which the maximum power is transferred to the load was found. Theoretical load resistance = Practical load resistance = Maximum power =

14

CIRCUITS AND DEVICES LAB MANUAL

4.b) VERIFICATION OF RECIPROCITY THEOREM AIM: To verify Reciprocity theorem and to determine the current flow through the load resistance. COMPONENTS REQUIRED: Sl.No 1 2 3 4 5 components RPS Resistor Ammeter Bread board Connecting wires Range (0-15)V 100,470, 820, 100 (0-30) mA, ----------Quantity 1 Each 1 1 1 few

THEORY: Reciprocity theorem In a linear, bilateral network a voltage source V volt in a branch gives rise to a current I, in another branch. If V is applied in the second branch the current in the first branch will be I. This V/I are called transfer impedance or resistance. On changing the voltage source from 1 to branch 2, the current in branch 2 appears in branch 1. PROCEDURE: 1. Connect the circuit as per the circuit diagram. 2. Switch on the supply and note down the corresponding ammeter readings. 3. Find ratio of input voltage to output current. 4. Interchange the position of the ammeter and power supply. Note down the Corresponding ammeter readings 5. Verify the reciprocity theorem by equating the voltage to current ratio.

RESULT: Thus the reciprocity theorem was verified 15

CIRCUITS AND DEVICES LAB MANUAL

5. a) FREQUENCY RESPONSE OF SERIES RESONANCE CIRCUIT AIM: To obtain the resonance frequency of the given RLC series electrical network. COMPONENTS REQUIRED: Sl.No 1 2 3 4 5 6 7 components Function generator Resistor Voltmeter capacitor Bread board Connecting wires Decade inductance box Range 0-2MHz 1K, (0-5) V 1F ---------(0-100)mH Quantity 1 1 1 1 1 Few 1

FORMULA USED: Series resonance frequency F=1/ (2 (LC)) PROCEDURE: 1. Connections are made as per the circuit diagram. 2. Vary the frequency of the function generator from 50 Hz to 20 KHz. 3. Measure the corresponding value of voltage across the resistor R for series RLC circuit. 4. Repeat the same procedure for different values of frequency. 5. Tabulate your observation. 6. Note down the resonance frequency from the graph. RESULT: Thus the resonance frequency of series RLC circuit is obtained. Practical value = Theoretical value =

16

CIRCUITS AND DEVICES LAB MANUAL

5. b) FREQUENCY RESPONSE OF PARALLEL RESONANCE CIRCUIT AIM: To obtain the resonance frequency of the given RLC parallel electrical network. COMPONENTS REQUIRED: Sl.No 1 2 3 4 5 6 7 components Function generator Resistor Voltmeter capacitor Bread board Connecting wires Decade inductance box Range 0-3MHz 1K, (0-5) V 1F ---------(0-100)mH Quantity 1 1 1 1 1 Few 1

FORMULA USED: Parallel resonance frequency F=1/ (2 (LC) PROCEDURE: 1. Connections are made as per the circuit diagram. 2. Vary the frequency of the function generator from 50 Hz to 20 KHz. 3. Measure the corresponding value of voltage across the resistor R for series RLC circuit. 4. Repeat the same procedure for different values of frequency. 5. Tabulate your observation. 6. Note down the resonance frequency from the graph. RESULT: Thus the resonance frequency of series RLC circuit is obtained. Practical value = Theoretical value = 17

CIRCUITS AND DEVICES LAB MANUAL

6. a. CHARACTERISTICS OF PN JUNCTION DIODE AIM: To plot the characteristic of PN junction diode. COMPONENTS REQUIRED: Sl.No 1 2 3 4 5 6 7 components Diode RPS Resistor Ammeter voltmeter Bread board Connecting wires Range IN 4001 (0-30)V 1K, (0-50)mA (0-500)A (0-1)V (0-30)V --------Quantity 1 1 1 1 1 1 1 1 few

FORMULA USED: 1. Forward Resistance Rf=VF/IF 2. Reverse Resistance Rr= VR/IR PROCEDURE: Forward bias: 1. The circuit connections are made as per the circuit diagram 2. Vary the power supply voltage such a way that readings are taken in steps of .1 V in the voltmeter. 3. Note down the corresponding ammeter readings. 4. Plot the graph current Vs voltage. 5. calculate dynamic resistance r=(V/I) Reverse bias: 1. Connect the circuit as per the circuit diagram. 2. Vary the power supply in step by 1 V. 3. Note down corresponding ammeter reading. 4. Plot the graph current Vs voltage. RESULT: Thus the characteristic of PN junction diode was obtained. 18

CIRCUITS AND DEVICES LAB MANUAL

(i)Forward resistance=

(ii)Reverse resistance= 6.b) CHARACTERISTICS OF ZENER DIODE

AIM: To draw the V-I characteristic of Zener diode and find the parameter. COMPONENTS REQUIRED: Sl.No 1 2 3 4 5 6 7 components Zener Diode RPS Resistor Ammeter voltmeter Bread board Connecting wires (0-30)V 1K, (0-50)mA (0-1)V --------Range Quantity 1 1 1 1 1 1 few

FORMULA USED: 1. Forward Resistance Rf=VF/IF 2. Reverse Resistance Rr= VR/IR PROCEDURE: Forward bias characteristic: 1. The circuit connections are made as per the circuit diagram 2. Keep the RPS connected in a minimum value and switch ON the power supply gradually increase voltage in step of .1V . 3. Note down the corresponding ammeter and voltmeter readings. 4. Plot the forward V-I curve . 5. calculate forward resistance Rf=(V/I)

19

CIRCUITS AND DEVICES LAB MANUAL

Reverse bias characteristic: 1. Connect the circuit as per the circuit diagram. 2. Keep the RPS connected in a minimum value and switch ON the power supply. 3. Gradually increase voltage in step of .1V. 4. Vary the power supply in step by 1 V. 5. Note down corresponding reverse voltage and current. 6. Plot the graph current Vs voltage. 7. Plot the reverse V-I curve.

RESULT: Thus the characteristic of Zener diode was studied and their characteristic was drawn. (i)Forward resistance= 20

CIRCUITS AND DEVICES LAB MANUAL

(ii)Reverse resistance=

7. CHARACTERISTICS OF CE CONFIGURATION AIM: To draw input and output characteristics of BJT in CE configuration and to determine its parameter. COMPONENTS REQUIRED: Sl.No 1 2 3 4 5 6 7 components Transistor RPS Resistor Ammeter voltmeter Bread board ---Connecting wires -----FORMULA USED: 1. Input impedance (hie) =VBE/IB at VCE constant 2. Forward current gain (hfe) = IC/IB at VCE constant 3. Output conductance (hoe) = IC/VCE at IB constant 4. Reverse voltage gain (hre) = VBE/VCE at IB constant PROCEDURE: 1. The circuit connections are made as per the circuit diagram 2. To draw the input characteristics VCE is kept constant 3. Input RPS is varied and the corresponding values of IB and VBE Voltage are noted 4. To draw the output characteristics IB is kept constant 5. output RPS is varied and the corresponding values of IC and VCE are Noted. 21 few 1 Range Bc 547 (0-30)V 1K, (0-50)mA (0-500) A (0-1)V,mc (0-30)V,mc Quantity 1 2 2 1 1 1

CIRCUITS AND DEVICES LAB MANUAL

6. Corresponding input and output characteristics curves are drawn.

RESULT: Thus the static characteristics of CE mode configuration is drawn from the output graph the h parameter are determined. (i)Input impedance= (ii)Forward current gain= (iii)Output conductance= (iv)Reverse voltage gain= 22

CIRCUITS AND DEVICES LAB MANUAL

8. STATIC CHARACTERISTICS OF CB CONFIGURATION AIM: To draw input and output characteristics of BJT in CB configuration and to determine its parameter. COMPONENTS REQUIRED: Sl.No 1 2 3 4 5 6 7 components Transistor RPS Resistor Ammeter voltmeter Bread board Connecting wires Range BC 547 (0-30)V 1K, (0-30)mA (0-30) mA (0-2)V,mc (0-30)V,mc --------Quantity 1 2 2 1 1 1 1 1 Few

FORMULAS USED: 1. Input impedance (hie) =VBE/IE at VCB constant 2. Forward current gain (hfe) = IC/IE at VCB constant 3. Output conductance (hoe) = IC/VCB at IE constant 4. Reverse voltage gain (hre) = VBE/VCB at IE constant PROCEDURE: 1. The circuit connections are made as per the circuit diagram 2. To draw the input characteristics VCB is kept constant 3. VBE is varied and the corresponding values of IE are noted 4. To draw the output characteristics IE is kept constant 5. VCB is varied and the corresponding values of IC are noted 6. Corresponding input and output characteristics curves are drawn

23

CIRCUITS AND DEVICES LAB MANUAL

RESULT: Thus the static characteristics of transistor under the CB mode Was determined. (i)Input impedance (hib) =

(ii)Forward current gain (hfb) = (iii)Output conductance (hob) = 24

CIRCUITS AND DEVICES LAB MANUAL

(iv)Reverse voltage gain (hrb) = 9.a) CHARACTERISTICS OF UJT AIM: To determine the static characteristics of UJT. COMPONENTS REQUIRED: Sl.No 1 2 3 4 5 6 7 components UJT RPS Resistor Ammeter voltmeter Bread board Connecting wires Range 2N2646 (0-30)V 1K,22K (0-50)mA (0-10)V,mc (0-30)V,mc --------Quantity 1 2 Each 1 1 1 1 1 Few

FORMULA USED: 1. Negative resistance = VBE/IE. 2. Intrinsic stand off ratio = (VP-VBE)/VB1B2.

PROCEDURE: 1. Circuit connections are made as per the circuit diagram. 2. The voltage VB1B2 is kept constant and VBE is varied. 3. The corresponding values of IE are noted. 4. For different constant values of VB1B2 the values of VBE & IE are noted. 5. The input side RPS is varied slowly from zero and the voltmeter readings are noted. 6. At one point, the needle deflects back and currents starts increasing. 7. The currents must not increase beyond 25mA. 8. Graph is plotted. 9. The current must not increase beyond .25mA. 25

CIRCUITS AND DEVICES LAB MANUAL

APPLICATION: 1. Square or Saw tooth wave generator. 2. over voltage detector. 3. Switching, timing phase control circuit etc.

RESULT: Thus the parameter of UJT was determined from its characteristics. 1. negative resistance = 2. intrinsic stand off ratio = 26

CIRCUITS AND DEVICES LAB MANUAL

9.b) CHARATERISTICS OF SCR AIM: To determine the characteristics of SCR.

COMPONENTS REQUIRED: Sl.No 1 2 3 4 5 6 7 components SCR RPS Resistor Ammeter voltmeter Bread board Connecting wires Range 2P4M (0-30)V 1K,10K (0-50)mA (0-100) A (0-30)V,mc --------Quantity 1 2 Each 1 1 1 1 1 Few

PROCEDURE: 1. Circuit connections are made as per the circuit diagram. 2. Set the gate current IG equal to firing current vary anode to cathode Voltage, VAK in steps of 0.5V and note down the corresponding anode current IAK 3. VBO is the point where voltages suddenly drops & there is sudden increase in anode current IA. 4. Note down the current at that point called latching current. 5. Increase VAK insteps of N till its maximum. 6. Open the gate terminal & decrease the VAK. 7. Holding current is the current, flow in which the deflection in both Voltmeter VAK & ammeter suddenly reduces to zero. APPLICATION: 1. Used as switch.. 2. Motor speed control. 3. Light dimming control. 27

CIRCUITS AND DEVICES LAB MANUAL

4. Phase control

RESULT: Thus the characteristic of SCR was determined. Latching current = Holding current = VBO current = 28

CIRCUITS AND DEVICES LAB MANUAL

10.a) CHARACTERISTICS OF JFET AIM: To determine the drain & transfer characteristics of given JFET & to find its parameters. COMPONENTS REQUIRED: Sl.No 1 2 3 4 5 6 7 components FET RPS Resistor Ammeter Voltmeter Bread board ---Connecting wires -----FORMULA USED: 1. Drain resistance (rd) = VDS/ID 2. Trans conductance (gm) = ID/VGS 3. Amplification factor () =rd*gm. few Range BFW 10 (0-30)V 1K (0-10)mA (0-30)V (0-10)V Quantity 1 2 2 1 1 1 1

PROCEDURE: DRAIN CHARACTERISTICS: 1. Connections are made as per the circuit diagram. 2. Set gate voltage VGS=-1, vary the drain voltage VDS instep of 1V & note down the corresponding drain current ID. 3. Repeat the above procedure for VGS=0V,-2V. 4. Plot the graph for a constant VDS Vs ID 5. Find the drain resistance (rd) = VDS/ID TRANSFER CHARACTERISTICS: 1. Connections are made as per the circuit diagram. 29

CIRCUITS AND DEVICES LAB MANUAL

2. Set gate voltage VDS=1V, vary the gate voltage VGS in step of 1V and note down the corresponding drain current ID 3. Repeat the above procedure for VDS=5V, 10V. 4. Plot the graph for VGS Vs ID. 5. Find the Trans conductance (gm) gm = ID/VGS APPLICATION: 1. Used as a buffer in measuring instruments. 2. Used as a voltage variable resistor. 3. Used in oscillator circuits. 4. Used in cascade amplifier.

RESULT: Thus the drain and transfer characteristics of JFET is drawn and the parameters were determined. 1. Drain resistance (rd) = 2. Trans conductance (gm) = 30

CIRCUITS AND DEVICES LAB MANUAL

3. Amplification factor () =... 10.b) CHARACTERISTICS OF MOSFET AIM: To draw the static characteristics of the given MOSFET and to find its parameter. COMPONENTS REQUIRED: Sl.No 1 2 3 4 5 6 7 components RPS Resistor MOSFET Ammeter Voltmeter Bread board -----Connecting wires -----few 1 (0-50)mA (0-10)V, (0-30)V Range (0-30)V 330 ,470 Quantity 1 Each 1 1 1 1 1

FORMULA USED: Drain resistance rd =VDS/ ID Trans conductance (gm) = ID/VGS Amplification factor (M) = rd* gm THEORY: MOSFET is common term for the insulated Gate Field Effect Transistor (IGFET).there are two basic forms of MOSFET: (i) enhancement MOSFET and (ii) depletion MOSFET. By applying a transverse electric field across an insulator, deposited on the semi conducting material, the thickness and hence the resistance of a conducting channel of a semi conducting material can be controlled. In depletion MOSFET, the controlling electric field reduces the number of majority carriers available for conduction, whereas in the enhancement MOSFET, application of electric field causes an increase in the majority carrier density in the conducting regions of the transistor. 31

CIRCUITS AND DEVICES LAB MANUAL

PROCEDURE: Transfer characteristics: 1. Connections are made as per the circuit diagram. 2. Set VDS some constant voltage. 3. vary the input side RPS measure the corresponding VGS and ID 4. measure the VGS in which ammeter shows deflection and VDS 5. Plot the graph voltage against current. Drain characteristics: 1. Set the input above the threshold voltage. 2. Vary the input side RPS and measure the corresponding VDS and ID 3. Plot the graph voltage against current.

RESULT: Thus the characteristics of MOSFET were drawn. Drain resistance rd =VDS/ ID= Trans conductance (gm)= ID/VGS = Amplification factor (M) = rd* gm= 11. a) CHARACTERISTICS OF DIAC 32

CIRCUITS AND DEVICES LAB MANUAL

AIM: To draw the VI characteristics of the given DIAC and determine cut in voltage. COMPONENTS REQUIRED: Sl.No 1 2 3 4 5 6 7 components RPS Resistor DIAC Ammeter Voltmeter Bread board Connecting wires Range (0-60)V 1 K DB3 (0-30)mA (0-50)V ----------Quantity 1 1 1 1 1 1 few

THEORY: DIAC is a three layer and two terminal semiconductor devices. MT1and MT2 is the two main terminals which are interchangeable. It acts as a bidirectional avalanche diode. It does not have any control terminal. It has two junctions J1 and J2. Though the diac resembles a bipolar transistor, the central layer is free from any connection with the terminals. DIAC CHARACTERISTICS: It acts as a switch in both directions. As the doping level at the two ends of the device is the same, the Diac has identical characteristics for both positive and negative half of an a.c cycle. During the positive half cycle, MT1 is positive with respect to MT2 whereas MT2 is positive with respect to MT1 in the negative half cycle. At the voltage less than the break over voltage, a very small amount of current called the leakage current flows through the device and the device remains in off state. When the voltage level reaches the break over voltage, the device starts conducting and it exhibits negative resistance characteristics ,i.e. the current flowing in the device starts increasing and the voltage across it starts decreasing.

33

CIRCUITS AND DEVICES LAB MANUAL

PROCEDURE: 1. 2. 3. 4. 5. 6. 7. MT1 is positive w.r.t MT2. Connections are made as per the circuit diagram. Vary the power supply. Note down the corresponding ammeter and voltmeter reading. Plot the graph V against I. MT1 is negative w.r.t. MT2. Repeat the step 3 to 5.

RESULT: Thus the characteristics of DIAC were drawn and the cut in voltage was determined 11.b) CHARACTERISTICS OF TRIAC 34

CIRCUITS AND DEVICES LAB MANUAL

AIM: To draw the characteristics of the given TRIAC and determine break over voltage. COMPONENTS REQUIRED: Sl.No 1 2 3 4 5 6 7 components RPS Resistor TRIAC Ammeter Voltmeter Bread board Connecting wires (0-50)mA (0-15)V (0-30)V ----------Range (0-30)V 1 K/5w, 1 K Quantity 2 2 1 2 1 1 1 few

THEORY: It is a three terminal semiconductor switching device which can control alternating current in a load. Its three terminals are MT1 and MT2 and the gate. Triac is equivalent to two SCRs connected in parallel but in the reverse direction. So triac will act as a switch for both directions. Like an SCR, a triac also starts conducting only when the breakover voltage is reached. Earlier to that the leakage current which is very small in magnitude flows through the device and therefore remains in the OFF state. The device, when starts conducting, allows very heavy amount of current to flow through it. The high inrush of current must be limited using external resistance, or it may otherwise damage the device. During the positive half cycle, MT1 is positive w.r.t MT2, whereas MT2 is positive w.r.t MT1 during negative half cycle. A Triac is a bidirectional device and can be triggered either by a positive or by a negative gate signal. By applying proper signal at the gate, the breakover voltage of the device can be changed: thus phase control process can be achieved. Triac is used for illumination control, temperature control, liquid level control, motor speed control and as static switch to turn a.c power ON and OFF.

35

CIRCUITS AND DEVICES LAB MANUAL

PROCEDURE: 1. 2. 3. 4. 5. 6. 7. Connect the circuit as per circuit diagram. To set gate current (Ig),VMT1,VMT2 Vary Vg till VAK suddenly drops. Note down the corresponding IG,set gate current equal firing current. Vary anode to cathode Vge. Vary VAK supply voltage in steps 7 note down the corresponding ammeter readings. Open the gate terminal & decrease VAK.

RESULT: Thus the characteristic of TRIAC was drawn. MT1 break over voltage (VBO) = MT1 break over current (IBO) = MT2 break over voltage (-VBO) = MT2 break over current (-IBO) = 36