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AnalogElectronics_Lecture4_PartB_low and high frequency model of CE BJT.

Bijay_Kumar Sharma
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Abstract
Part B of Lecture 4 derives the Hybrid-pi model of CE BJT from T-model of CB BJT at low and high frequencies.

AnalogElectronics_Lecture4_PartB_low and high frequency model of CE BJT. INCREMENTAL MODEL OF CE BJT FROM T MODEL OF CB BJT
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Figure 11a. Low Frequency Incremental T Model of CB BJT. Let us re-orient this as CE conguration.

Figure 2

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Figure 11b. The reoriented T Model to represent CE BJT. It should be noticed that in T-Model under normal orientation has controlled current(f ie ) coming out of collector node since base current is coming out of base node. But in reoriented T Model controlled current(f ie ) coming into collector node since base current is coming into base node. Input Mesh Equation:

Figure 3

Figure 4

Figure 5

Where gm = trans conductance = IC /VT whereas re = VT / IE and IC = F IE

Figure 6

The output current is =

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Here

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Figure 12. Bode Plot of beta and alpha and location of and . Beta cuto frequency = and alpha cuto frequency = . Cut-o frequency = -3dB frequency = this is the frequency where parameter falls to 0.707 of its at band value or midband value = corner frequency = half power frequency

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Figure 13. Low Frequency Hybrid- Model of CE BJT.

Figure 11

This is due to EARLY EFFECT or due to Base Width Modulation. A parameter Early Voltage VA is used for determining the output impedance of the hybrid  Model. This output impedance is 1/hoe . The denition of Early Voltage VA is given in Figure 14.

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Figure 12

Figure 13

Figure 14. The denition of Early Voltage for a CE BJT.

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COMPARISON BETWEEN HYBRID-pi MODEL OF CE BJT AND T MODEL OF CB BJT

Figure 14

Figure 15

T-model of CB BJT Unilateral model

Hybrid-pi Model of CE BJT Non Unilateral model

hrb =

Table 1
In CB BJT,if we consider base spreading resistance to be zero then

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Figure 17

For CE BJT if we consider r to be innity then:

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Figure 18

Figure 19

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Figure 20

Incremental model at high frequency

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Figure 21

Figure 16. High frequency T-Model of CB BJT.

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Figure 22

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Figure 23

Figure 24

Here t is the transit time taken by the minority carriers to cross the base width. The mechanism of
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transit is both diusion and drift. Now let us consider CE BJT at high frequency: Here f (short circuit current gain in CE BJT) is arrived at in exactly the same manner as f was arrived at in CB BJT.

Figure 25

Figure 17. High Frequency Hybrid- Model of CE BJT.

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Figure 26

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