You are on page 1of 5

SSF7510

Feathers: Advanced trench process technology Special designed for Convertors and power controls High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description: The SSF7510 is a new generation of middle voltage and high current NChannel enhancement mode trench power MOSFET. This new technology increases the cell density and reduces the on-resistance; its typical Rdson can reduce to 6.8mohm. Application: Power switching application SSF7510 TOP View (TO220) Absolute Maximum Ratings Parameter ID@Tc=25 C ID@Tc=100C IDM PD@TC=25C VGS dv/dt EAS EAR TJ TSTG Thermal Resistance Parameter RJC RJA Junction-to-case Junction-to-ambient Parameter BVDSS RDS(on) VGS(th) gfs IDSS IGSS Drain-to-Source breakdown voltage Static Drain-to-Source on-resistance Gate threshold voltage Forward transconductance Drain-to-Source leakage current Gate-to-Source forward leakage
2008.8.1

ID=75A BV=75V Rdson=10mohm

Max. 75 70 300 150 2.0 20 31 480 TBD 55 to +150

Units A W W/ C V v/ns mJ

Continuous drain current,VGS@10V Continuous drain current,VGS@10V Pulsed drain current Power dissipation Linear derating factor Gate-to-Source voltage Peak diode recovery voltage Single pulse avalanche energy Repetitive avalanche energy Operating Junction and Storage Temperature Range

Min. Min. 75 2.0 Typ.

Typ. 0.83

Max. 62

Units C/W

Electrical Characteristics @TJ=25 C(unless otherwise specified)


Max. Units 0.01 4.0 1 10 100 A nA VGS=20V
page 1of5

Test Conditions VGS=0V,ID=250A VGS=10V,ID=40A VDS=VGS,ID=250A VDS=5V,ID=30A VDS=75V,VGS=0V VDS=75V, VGS=0V,TJ=150C

V V S

0.007 2.7 58

Silikron Semiconductor CO.,LTD.

Version : 1.0

SSF7510
Gate-to-Source reverse leakage Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Total gate charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on delay time Rise time Turn-Off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance 90 14 24 18.2 15.6 70.5 13.8 3150 300 240 -100 nS VGS=-20V ID=30A nC VDD=30V VGS=10V VDD=30V ID=2A ,RL=15 RG=2.5 VGS=10V VGS=0V pF VDS=25V f=1.0MHZ

Source-Drain Ratings and Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-on Time . . Min. Typ. 57 107 Max. 75 A 300 1.3 V nS nC Units showing the integral reverse p-n junction diode. TJ=25C,IS=40A,VGS=0V TJ=25C,IF=75A di/dt=100A/s Test Conditions MOSFET symbol

Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)

Notes: Repetitive rating; pulse width limited by max junction temperature. Test condition: L =0.3mH, ID = 57A, VDD = 47V

Pulse width300S; duty cycle1.5% RG = 25Starting TJ = 25C


EAS test circuits:
BV dss

Gate charge test circuit:

Silikron Semiconductor CO.,LTD.

2008.8.1

Version : 1.0

page

2of5

SSF7510
Switch Time Test Circuit
Switch Waveforms:

Transfer Characteristic

Capacitance

On Resistance vs Junction Temperature

Breakdown Voltage vs Junction Temperature

Silikron Semiconductor CO.,LTD.

2008.8.1

Version : 1.0

page

3of5

SSF7510

Gate Charge

Source-Drain Diode Forward Voltage

Safe Operation Area

Max Drain Current vs Junction Temperature

Transient Thermal Impedance Curve

Silikron Semiconductor CO.,LTD.

2008.8.1

Version : 1.0

page

4of5

SSF7510
TO220 MECHANICAL DATA:

Silikron Semiconductor CO.,LTD.

2008.8.1

Version : 1.0

page

5of5