SEMITRANS

2
Trench IGBT Modules
SKM195GB066D
Features

Homogeneous Si

Trench = Trenchgate technology

V
CE(sat)
with positive
temperature coefficient

High short circuit capability,

self limiting to 6 x l
C
Typical Applications*

AC inverter drives

UPS

Electronic welders
Remarks

Case temperature limited to

T
c
= 125C max.,
product rel. results valid for
T
j
150C

SC data: Use of soft R

G
necessary!

Take care of over-voltage caused

by stray induct.
GB GAL
Absolute Maximum Ratings
T
case
= 25C, unless otherwise specified
Symbol Conditions Values Units
IGBT
V
CES
T
j
= 25 C 600 V
l
C
T
j
= 175 C T
c
= 25 C 265 A
T
c
= 80 C 200 A
l
CRM
l
CRM
=2xl
Cnom
400 A
V
GES
20 V
t
psc
V
CC
= 360 V; V
GE
15 V;
VCES < 600 V
T
j
= 150 C 6 s
Inverse Diode
l
F
T
j
= 175 C T
c
= 25 C 200 A
T
c
= 80 C 130 A
l
FRM
l
FRM
=2xl
Fnom
400 A
l
FSM
t
p
= 10 ms; sin. T
j
= 175 C 1400 A
Module
l
t(RMS)
200 A
T
vj
- 40 ... + 175 C
T
stg
- 40 ... + 125 C
V
isol
AC, 1 min. 4000 V
Characteristics
T
case
= 25C, unless otherwise specified
Symbol Conditions min. typ. max. Units
IGBT
V
GE(th)
V
GE
= V
CE
, l
C
= 3,2 mA 5 5,8 6,5 V
l
CES
V
GE
= 0 V, V
CE
= V
CES
T
j
= 25 C 0,13 0,38 mA
V
CE0
T
j
= 25 C 0,9 1 V
T
j
= 150 C 0,85 0,9 V
r
CE
V
GE
= 15 V T
j
= 25C 2,8 4,5 mO
T
j
= 150C 4,3 6 mO
V
CE(sat)
l
Cnom
= 200 A, V
GE
= 15 V T
j
= 25C
chiplev.
1,45 1,9 V
T
j
= 150C
chiplev.
1,7 2,1 V
C
ies
12,3 nF
C
oes
V
CE
= 25, V
GE
= 0 V f = 1 MHz 0,77 nF
C
res
0,37 nF
Q
G
V
GE
= -8V...+15V 1500 nC
R
Gint
T
j
= C 2 C
t
d(on)
160 ns
t
r
R
Gon
= 3 O V
CC
= 300V 68 ns
E
on
l
C
= 200A 14 mJ
t
d(off)
R
Goff
= 3 O T
j
= 150 C 520 ns
t
f
V
GE
= -8V/+15V 49 ns
E
off
8 mJ
R
th(j-c)
per lGBT 0,22 K/W
SKM 195GB066D
1 06-10-2009 NOS by SEMIKRON
SEMITRANS

2
Trench IGBT Modules
SKM195GB066D
Features

Homogeneous Si

Trench = Trenchgate technology

V
CE(sat)
with positive
temperature coefficient

High short circuit capability,

self limiting to 6 x l
C
Typical Applications*

AC inverter drives

UPS

Electronic welders
Remarks

Case temperature limited to

T
c
= 125C max.,
product rel. results valid for
T
j
150C

SC data: Use of soft R

G
necessary!

Take care of over-voltage caused

by stray induct.
GB GAL
Characteristics
Symbol Conditions min. typ. max. Units
Inverse Diode
V
F
= V
EC
l
Fnom
= 200 A; V
GE
= 0 V T
j
= 25 C
chiplev.
1,4 1,6 V
V
F0
T
j
= 25 C 0,95 1 V
r
F
T
j
= 25 C 2,3 3 mO
l
RRM
l
F
= 200 A T
j
= 150 C 100 A
Q
rr
di/dt = 2000 A/s 30 C
E
rr
V
GE
= -8 V; V
CC
= 300 V 5,6 mJ
R
th(j-c)D
per diode 0,4 K/W
Module
L
CE
30 nH
R
CC'+EE'
res., terminal-chip T
case
= 25 C 0,75 mO
T
case
= 125 C 1 mO
R
th(c-s)
per module 0,05 K/W
M
s
to heat sink M6 3 5 Nm
M
t
to terminals M5 2,5 5 Nm
w 150 g
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our personal.
SKM 195GB066D
2 06-10-2009 NOS by SEMIKRON
SEMITRANS

2
Trench IGBT Modules
SKM195GB066D
Features

Homogeneous Si

Trench = Trenchgate technology

V
CE(sat)
with positive
temperature coefficient

High short circuit capability,

self limiting to 6 x l
C
Typical Applications*

AC inverter drives

UPS

Electronic welders
Remarks

Case temperature limited to

T
c
= 125C max.,
product rel. results valid for
T
j
150C

SC data: Use of soft R

G
necessary!

Take care of over-voltage caused

by stray induct.
GB GAL
Z
th
Symbol Conditions Values Units
Z
th(j-c)l
R
i
i = 1 160 mk/W
R
i
i = 2 41 mk/W
R
i
i = 3 16 mk/W
R
i
i = 4 3 mk/W
tau
i
i = 1 0,0276 s
tau
i
i = 2 0,0406 s
tau
i
i = 3 0,001 s
tau
i
i = 4 0,0011 s
Z
th(j-c)D
R
i
i = 1 250 mk/W
R
i
i = 2 110 mk/W
R
i
i = 3 35 mk/W
R
i
i = 4 5 mk/W
tau
i
i = 1 0,054 s
tau
i
i = 2 0,012 s
tau
i
i = 3 0,0015 s
tau
i
i = 4 0,0007 s
SKM 195GB066D
3 06-10-2009 NOS by SEMIKRON
Fig. 1 Typ. output characteristic, inclusive R
CC'+ EE'
Fig. 2 Rated current vs. temperature I
C
= f (T
C
)
Fig. 3 Typ. turn-on /-off energy = f (I
C
) Fig. 4 Typ. turn-on /-off energy = f (R
G
)
Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic
SKM 195GB066D
4 06-10-2009 NOS by SEMIKRON
Fig. 7 Typ. switching times vs. I
C
Fig. 8 Typ. switching times vs. gate resistor R
G
Fig. 9 Transient thermal impedance of IGBT and Diode Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovered charge
SKM 195GB066D
5 06-10-2009 NOS by SEMIKRON
UL recognized, file no. E 63 532
Case D 61
GB Case D 61 GAL Case D 62
SKM 195GB066D
6 06-10-2009 NOS by SEMIKRON