Using Simulation to Estimate

MOSFET Junction Temperature in a

Circuit Application

Presented by:
David Divins
Senior Staff Field Applications Engineer
International Rectifier
ddivins1@irf.com
Agenda

„ Definition of Electro-Thermal Simulation

„ Simulation Tools and Methods
„ Methods of Estimating Die Temperature
„ Creating Quasi-Dynamic MOSFET Model
„ Model Generation
„ Example Application
„ Conclusion
Electro-Thermal Simulation

„ Purpose of Electro-Thermal Simulation is to

predict MOSFET junction for a given
application.
Heatsink

Package Die

FR4 Board Solder joint

Electro-Thermal Simulation

„ Applications
‰ Solenoid drivers
‰ Motor drive
‰ Lighting ballast
‰ DC/DC converters
‰ Switch model power supplies
‰ Class D amplifiers
Simulation Tools and Methods
„ Method
‰ Implementing model in the hardware description
language
‰ Implementing model using equations and macro
modeling
library ieee; use ieee.std_logic_1164.all;
use ieee.electrical_systems.all;
V

+
entity comparator is Vds
port ( terminal a : electrical;
signal d : out std_ulogic ); A
+
end entity comparator; Source V dr Drain
Id

---------------------------------------------------------------- vs. 10
Vgs irfr9024
10

architecture ideal of comparator is Gate Ta

+
Rdson V
constant ref_voltage : real := 5.0; Equations
10
quantity vin across a; 10
Vdst EQU
begin PWR
FCT_ABS1 Tj
10 601.26m K/W 2.01 K/W
117.73m K/W
comparator_behavior : process is dr
RTH3
begin
if vin > ref_voltage / 2.0 then
PWR Abs H
RTH1 RTH2
d <= '1' after 5 ns; Probe 1.38m Ws/K Θ
else CTH3
H1 211.98u Ws/K
d <= '0' after 5 ns; CTH2 32.33m Ws/K T1 Ta aC
end if; PWR
wait on vin'above(ref_voltage / 2.0); CTH1
end process comparator_behavior;

end architecture ideal;

Simulation Tools and Methods

„ Quasi-Dynamic MOSFET model

implementation
‰ Macro modeling with use of linking equations
‰ Using a multi domain simulator that allows for
Electro-Thermal simulation.
„ Volts and Amps
„ Heat flow (Watts) and temperature
+
H V A

Thermometer Voltmeter
Heat Ammeter
Methods of Estimating Die Temperature

„ Methods of estimating MOSFET die junction

temperature
‰ Equation based + Thermal Impedance curve
P = I ∗V ∗ D
Where:
I = average current during the conduction cycle
V = equivalent voltage across the device during
the conduction cycle
D = duty cycle
Methods of Estimating Die Temperature

- Use Power calculated with P=I*V*D

- Use pulse width and duty cycle to determine Zth (thermal impedance) from
device thermal impedance curve
- Temperature rise (ΔTjunction)= Zth * P
Methods of Estimating Die Temperature

„ Limitations of the equation based junction

temperature estimate
‰ Only temperature rise from junction to case is taken into
account. Neglects case to ambient temperature rise.
‰ Assumes the power pulse is an ideal square edged pulse
train.
‰ It does not allow for transient thermal response.

Temperature
Rise Calculated Case
Ambient
Junction Case to Ambient Temperature
Rise Not calculated
Methods of Estimating Die Temperature

„ Simulator based MOSFET junction temperature estimate

‰ Uses circuit simulation to calculate junction temperature in an
application
‰ The circuit can be arbitrary
‰ Transient thermal response is calculated
‰ Component parameters change with temperature
FET Junction Temperature Load Current
FET Power 150.00 182.47
1.50k

1.00k
Gate Voltage IRF28... 100.00
W

IRF28... 100.00

C
10.05 500.00 Bus.I [A]

A
5.00 Vgs.V ..

-50.00m 0
0 2.00m 4.00m 50.00
0 200.00m

25.00
0 25.00m 50.00m72.28m -20.00n
0 2.00m 4.35m
IRF2804S_7P_Therm Parameters
Bus
IRF2804S_7P_Therm
Vbus V Vds1 Name Value Gate Voltage vs. Ig
trig 1.00m
Vds2 + 30.60 10.05
+ 20.00
Ipk 200.00
Vgs + I1 D1 Vgs.V ..
(V)

V V Vds2.... Iss 40.00

Vsw Vbus 28.00 Vgs.V ..
V 0 Vgs.V ..
R1 175.00m
+ Vgs.V ..
0 200.00m R2 700.00m
Rdrv Vgs.V ..
AM1 V Vds1 Ig 100.00u 5.00
Vgs.V ..
IRF2804S_7P_Therm1
IRF2804S_7P_Therm Vgs.V ..
A Parameters
Vgs.V ..
ICA: Peak Tj for IRF2804_7P Vgs.V ..
Tj 150.00 Vgs.V ..
TR -39.20m
(C)

STATE1 Probe Tj.MAX

R1 0 100.00m 200.00m
STATE2 R2 0
Load_current
TR 0 200.00m
TRANS1 C1 Probe
Peak Load Current vs Gate Drive Current
Equations 191.80
Vds2
Driver EQU
1.40
180.00
A

0 Load_...
(V)

Vds1....
Load Voltage Load Current
-2.44 167.65
27.80 192.00
0 200.00m 8.00u 500.00u 1.00m
N0009.V A
10.00
1.50u
0 200.00m 100.00 Experiment Table
A

RunNo Ig Load_current.MAX Tj.MAX FET Junction Temp Rise vs. Gate Current
Tj
1.00 10.00u 167.68 366.02 366.25
368.00 2.00 16.68u 174.47 314.35
3.00 27.83u 179.20 271.71 300.00
300.00 -20.00n
4.00 46.42u 182.85 207.12
0 100.00m 200.00m 5.00 77.43u 185.65 156.68
C

6.00 129.16u 187.68 116.89 200.00 Tj.MAX

7.00 215.44u 189.41 83.11
200.00 Measured Values
C

8.00 359.38u 190.50 63.17

Name Value 9.00 599.48u 191.25 60.75
60.00
Bus.I [A] 42.76 10.00 1.00m 191.71 60.25
Load_current.MAX 186.82 10.00u 30.00u 100.00u200.00u 1.00m
100.00 A
Temp_Rise 148.25

25.00
0 100.00m 200.00m
Methods of Estimating Die Temperature

„ Assumptions made for junction temperature

estimates using simulation
‰ No other source of heat considered (Temperature
rise due to self heating only)
‰ Only MOSFET Rdson and threshold voltage
changes with temperature
‰ Since simulation solves Ordinary Differential the
junction is assumed to be a point source of heat.
Creating Quasi-Dynamic Thermal
MOSFET Model
„ Gathering information:
‰ 25C Spice Model of MOSFET
‰ Datasheet information
„ Rdson vs. Temperature curve
„ Thermal Impedance Curve with thermal RC ladder network
.SUBCKT irf1404 1 2 3 * SPICE3 MODEL WITH
THERMAL RC NETWORK
************************************** * Model Generated
by MODPEX * *Copyright(c) Symmetry Design
Systems* * All Rights Reserved * * UNPUBLISHED
LICENSED SOFTWARE * * Contains Proprietary
Information * * Which is The Property of * *
SYMMETRY OR ITS LICENSORS * *Commercial Use
or Resale Restricted * * by Symmetry License
Agreement * ************************************** * Model
generated on April 2, 01 * MODEL FORMAT: SPICE3
* Symmetry POWER MOS Model (Version 1.0) *
External Node Designations * Node 1 -> Drain * Node
2 -> Gate * Node 3 -> Source M1 9 7 8 8 MM L=100u
W=100u .MODEL MM NMOS LEVEL=1 IS=1e-32
+VTO=3.74133 LAMBDA=0.00250986 KP=514.947
+CGSO=7.17952e-05 CGDO=1.60578e-08 RS 8 3
0.00282867 D1 3 1 MD .MODEL MD D IS=1.89845e-
10 RS=0.00218742 N=1.20398 BV=40 +IBV=0.00025
EG=1.2 XTI=1.85712 TT=2.00014e-05
+CJO=5.42237e-09 VJ=2.67939 M=0.566441 FC=0.1
RDS 3 1 1e+06 RD 9 1 0.000681391 RG 2 7 3.16781
D2 4 5 MD1 * Default values used in MD1: * RS=0
EG=1.11 XTI=3.0 TT=0 * BV=infinite IBV=1mA
.MODEL MD1 D IS=1e-32 N=50 +CJO=3.13813e-09
VJ=0.970446 M=0.823421 FC=1e-08 D3 0 5 MD2 *
Default values used in MD2: * EG=1.11 XTI=3.0 TT=0
CJO=0 * BV=infinite IBV=1mA .MODEL MD2 D IS=1e-
10 N=0.4 RS=3e-06 RL 5 10 1 FI2 7 9 VFI2 -1 VFI2 4
0 0 EV16 10 0 9 7 1 CAP 11 10 7.84089e-09 FI1 7 9
VFI1 -1 VFI1 11 6 0 RCAP 6 10 1 D4 0 6 MD3 *
Default values used in MD3: * EG=1.11 XTI=3.0 TT=0
CJO=0 * RS=0 BV=infinite IBV=1mA .MODEL MD3 D
IS=1e-10 N=0.4 .ENDS irf1404
Creating Quasi-Dynamic Thermal
MOSFET Model
„ 25C Spice Model
‰ Characterized to the datasheet
‰ Does not change performance characteristics as
power is calculated
‰ Used as base model for Quasi-Dynamic MOSFET
model
Creating Quasi-Dynamic Thermal
MOSFET Model
Temperature (Tj)
Power
MOSFET Thermal
Model in Calculation
Simulation Network

Rdson=F(Tj)

Vth=F(Tj)
Model Generation

„ Ladder Network
‰ A thermal RC network used to model the dynamic
thermal behavior of the package + mounting
system.

117.73m K/W
RTH3

PWR RTH1 RTH2

Abs H
Probe 1.38m Ws/K Θ
CTH3
H1 211.98u Ws/K
CTH2 32.33m Ws/K T1 Ta aC

CTH1

Equivalent RC Ladder Network

Package + Mounting

The ladder network can be synthesized from the thermal impedance curve
or is given by the MOSFET manufacturer
Model Generation

„ Tying the thermal model to the 25C Spice

model
‰ Create the equation that represents Rdson vs.
temperature
Rdson(Tj ) = Rdson(25C ) * [a * Tj 2 + b * Tj + c]

dRdson(Tj )
= Rdson(25C ) * (2 * a * Tj + b)
dTj

dRdson = Rdson ( 25C ) * ( 2 * a * Tj + b) * (Tj − 25)

This expression gets
implemented in the model
Note: a, b and c are calculated via a curve fitting routine.
The Rdson vs Temperature curve is assumed to be quadratic.
Model Generation

‰ Create the voltage source that represents the

temperature dependence of Vth (threshold
voltage)

Vth (Tj ) = −0.007 * (Tj − 25) Expression used in model.

The voltage source is in series with the MOSFETs gate.

Model Generation

‰ Calculating the power in the MOSFET for use in

the thermal network.

P = Id * Vds

This calculated power is the source for the thermal network.

Model Generation

„ Putting it together
Drain dr

+ Vdst
irf2804s7p
+ Vds
Vth irf2804s7p1 V V Tj 10

Ta 10
Gate
PWR 10

Source
305.073m K/W
Tj 0.195105 K/W

PWR RTH1 RTH2 RTH3

Abs H T1
Θ
Probe
H1

PWR_abs Ta aC
PWR 3.808m Ws/K 26.941m Ws/K
CTH1 CTH2

Equations
EQU

dt:=Tj.T-Ta
Tj:=Tj.T-273.15
if(Vds.V<0.1) {Rdson25:=abs(Vds.V/dr.I)} else {dr:=1m}
if(Vds.V<0.1) {dr:=(7.41u*Tj+3.519m)*dt*Rdson25} else {dr:=1u}
PWR:=PWR_abs.VAL
Vth:=-7m*(Tj-25)
Model Generation

„ Final model
‰ 25C Spice model
‰ Added voltage source Vth in gate implements
Vth(Tj)
‰ dr implements dRdson = Rdson(25C ) * (2 * a * Tj + b) * (Tj − 25)
‰ Vds and the current in dr are used to calculate
Rdson25C
‰ Vdst and the current in dr is used to calculate the
total power
‰ PWR_abs is used to insure that the thermal network
is driven with positive power.
Example Application

„ High side switch

„ MOSFET being driven by a opto isolated
drive
‰ Very low drive current capability
„ Load is capacitive
„ Issue: How does driving this load effect the
junction temperature of the MOSFET
Example Application

„ Simulation Schematic
Vbus
108 V
PWR_FET

+
W

R1
Vcc
1k Ohm
24 V IRFP4232
IRFP4232_Therm
Ig
PVI1050N

Vop1
A1
Case N0052
Von1 A
C1
Vop2
A2
STATE1 STATE2 Heatsink
C2 Von2

S1 PVI1050N
TRANS1 +
Vgs
V

R2
C1
400u F 10 Ohm
Example Application

„ Assumptions
‰ Tambient=25C
‰ Heak sink is modeled as just a thermal resistor
‰ C1 & R2 represent a load system i.e. power
supply
‰ Ig, Vgs, PWR_FET, States 1 & 2, Trans1 and S1
are measurements, input stimulus and ideal
switch
Example Application
Gate Voltage, Junction Temperature, Power and Current

„ Results 15
MOSFET Current
10 (A)

1k MOSFET Power
(W)]
500

15 Gate Voltage
10 (V)

150 Junction Temperature

(C)
100

50

0 20.00m 40.00m 60.00m 80.00m 100.00m 120.00m 157.50m t [s]

Conclusion

„ Electro-Thermal simulation allows for analysis in

both electrical and thermal domains
„ Quasi-Dynamic Thermal MOSFET model allows for
self-heating to alter Rdson and Vth during simulation
as a function of temperature
„ Quasi-Dynamic Thermal MOSFET Model generation
is a data gathering task
„ The example shows why it is difficult to switch a
capacitive load with an opto-driver and a MOSFET
due to the excessive junction temperature spike
during turn-on.