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1 INTRODUCTION
135
Refs. [11,12] use three CCCIIs and two grounded capacitors. Ref. [13] uses
only two CCCIIs and two grounded capacitors. It reveals that circuits of
refs. [10–12] use more active elements than ref. [13].
In this paper authors present a new structure of sinusoidal oscillator based
on recently introduced CCCII(-IR) [14]. The proposed sinusoidal oscillator
uses two CCCII(-IR) and two grounded capacitors. The structure is also ana-
lyzed with CCCII as building block. The proposed structures are useful for IC
implementation as only grounded capacitors are used [15].
2 CIRCUIT DESCRIPTION
and
C2 = 2C1 (3)
FIGURE 1
Proposed CCCII (-IR) based oscillator structure.
FIGURE 2
Proposed CCCII based oscillator structure.
3 SIMULATION RESULTS
FIGURE 3
Simulated oscillations obtained from circuit of Fig. 1 with I01 = 50µA, I02 = 100µA, C1 =
0.01µF and C2 = 0.017µF.
FIGURE 4
Simulated oscillations obtained from circuit of Fig. 2 with I01 = 50µA, I02 = 100µA, C1 =
0.01µF and C2 = .023µF.
FIGURE 5
Variation of frequency of oscillation with bias current I01 for CCCII and CCCII(-IR).
–– Theoretical –2– Simulated with CCCII(-IR) –×– Simulated with CCCII.
FIGURE 6
Variation of % THD with bias current I01 . –×– Simulated with CCCII –2– Simulated with
CCCII(-IR).
value than with CCCII(-IR) specially at lower values of bias current. Figure 6
shows that the total harmonic distortion (THD) is much lower in oscillator
circuit with CCCII(-IR) than with CCCII.
4 CONCLUSIONS
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