0.

90

03.12.2007

page: 1 from 4

DISTRIBUTED FEEDBACK LASER

GaAs Semiconductor Laser Diode with integrated grating structure PRELIMINARY SPECIFICATION
RWE/RWL BAL DFB/DBR TPL/TPA

DFB Laser

EYP-DFB-0780-00080-1500-SOT02-0000
General Product Information
Product 780 nm DFB Laser with TO Housing Monitor Diode Application Spectroscopy Metrology

Absolute Maximum Ratings

Symbol Storage Temperature Operational Temperature at Case Forward Current Reverse Voltage Output Power TS TC IF VR Popt Unit C C mA V mW min -40 -20 typ max 85 75 200 0 100 Stress in excess of the Absolute Maximum Ratings can cause permanent damage to the device. Operation at the Absolute Maximum Rating for extended periods of time can adversely affect the device realibility and may lead to reduced operational life.

Recommended Operational Conditions

Symbol Temperature at Case Forward Current Output Power TChip IF Popt Unit C mA mW 10 min 15 typ max 40 180 80 total output measured with integrated sphere

Characteristics at Tamb 25 C at Begin Of Life

Parameter Center Wavelength Spectral Width (FWHM) Temperature Coefficient of Wavelength Temperature Coefficient of Current Output Power @ IF = 180 mA Slope Efficiency Symbol C d / dT d / dI Popt S Unit nm MHz nm / K nm / mA mW W/A 80 0.6 0.8 1.0 min 779 typ 780 2 0.06 0.003 total output measured with integrated sphere max 781 10 Measurement Conditions / Comments see images on page 4

eagleyard Photonics GmbH

Rudower Chaussee 29 (IGZ) 12490 Berlin GERMANY

fon +49. 30. 6392 452-0 fax +49. 30. 6392 452-9

info@eagleyard.com www.eagleyard.com

0.90

03.12.2007

page: 2 from 4

DISTRIBUTED FEEDBACK LASER

GaAs Semiconductor Laser Diode with integrated grating structure PRELIMINARY SPECIFICATION
RWE/RWL BAL DFB/DBR TPL/TPA

DFB Laser

EYP-DFB-0780-00080-1500-SOT02-0000
Characteristics at Tamb 25 C at Begin Of Life
Parameter Threshold Current Operational Current @ Popt = 80 mW Sidemode Supression Ratio Cavity Length Divergence parallel Divergence perpendicular Polarization Spatial Mode (transversal) Spectral Mode (longitudinal) Symbol Ith Iop SMSR L Unit mA mA dB m 6 18 30 45 1500 8 21 TM TEM00 Single Mode 10 24 E field perpendicular to Pin 2 - Pin 3 - plane fundamental mode min typ max 70 180 Popt = 80 mW Measurement Conditions / Comments

Monitor Diode
Parameter Monitor Detector Responsivity Reverse Voltage Monitor Diode Monitor Linearity Symbol Imon / Popt UR MD Lin MD Unit A / mW V % min 0.5 3 -10 typ max 5 5 +10 Popt = 10 80 mW, UR = 5 V Measurement Conditions / Comments UR = 5 V, target values

eagleyard Photonics GmbH

Rudower Chaussee 29 (IGZ) 12490 Berlin GERMANY

fon +49. 30. 6392 452-0 fax +49. 30. 6392 452-9

info@eagleyard.com www.eagleyard.com

0.90

03.12.2007

page: 3 from 4

DISTRIBUTED FEEDBACK LASER

GaAs Semiconductor Laser Diode with integrated grating structure PRELIMINARY SPECIFICATION
RWE/RWL BAL DFB/DBR TPL/TPA

DFB Laser

EYP-DFB-0780-00080-1500-SOT02-0000
Package Dimensions
Symbol Emission Plane Housing Diameter Pin Length dEP d l Unit mm mm mm min typ 3.65 9 14 max reference plane: top side of TO header

Package Pinout
Ground Photo Diode (+) Laser (+)

M-Type
1 2 3

Package Drawings

eagleyard Photonics GmbH

Rudower Chaussee 29 (IGZ) 12490 Berlin GERMANY

fon +49. 30. 6392 452-0 fax +49. 30. 6392 452-9

info@eagleyard.com www.eagleyard.com

0.90

03.12.2007

page: 4 from 4

DISTRIBUTED FEEDBACK LASER

GaAs Semiconductor Laser Diode with integrated grating structure PRELIMINARY SPECIFICATION
RWE/RWL BAL DFB/DBR TPL/TPA

DFB Laser

EYP-DFB-0780-00080-1500-SOT02-0000
Typical Measurement Results
Output Power vs. Current Spectra at Specified Optical Output Power

Performance figures, data and any illustrative material provided in this specification are typical and must be specifically confirmed in writing by eagleyard Photonics before they become applicable to any particular order or contract. In accordance with the eagleyard Photonics policy of continuous improvement specifications may change without notice.

Unpackaging, Installation and Laser Safety

Unpacking the laser diodes should only be done at electrostatic safe workstations (EPA). Though protection against electro static discharge (ESD) is implemented in the laser package, charges may occur at surfaces. Please store this product in its original package at a dry, clean place until final use. During device installation, ESD protection has to be maintained.
Laser Emission

The DFB diode type is known to be sensitive against optical feedback, so an optical isolator may be required in some cases. Operating at moderate temperatures on propper heat sinks willl contribute to a long lifetime of the diode.

INVISIBLE LASER RADIATION AVOID EYE OR SKIN EXPOSURE TO DIRECT OR SCATTERED RADIATION CLASS 4 LASER PRODUCT WAVELENGTH MAX. LASER POWER
780 nm 100 mW

The laser emission from this diode is close to the invisible infrared region of the electromagnetic spectrum. Avoid direct and/or indirect exposure to the free running beam. Collimating the free running beam with optics as common in optical instruments will increase thread to the human eye.

IEC 60825-1

DANGER
Each laser diode will come with an individual test protocol verifying the parameters given in this document.
INVISIBLE LASER RADIATION
AVOID EYE OR SKIN EXPOSURE TO DIRECT OR SCATTERED RADIATION

GaAs SEMICONDUCTOR LASER DIODE

100 mW MAX OUTPUT AT 780 nm

CLASS IV LASER PRODUCT

Complies with 21 CFR 1040.10 and 1040.40

eagleyard Photonics GmbH

Rudower Chaussee 29 (IGZ) 12490 Berlin GERMANY

fon +49. 30. 6392 452-0 fax +49. 30. 6392 452-9

info@eagleyard.com www.eagleyard.com