Exercise n.

1
Consider a pn heterojunction between Al
0.4
Ga
0.6
As (hereafter material A), with N
AA
=
510
17
cm
3
and Al
0.15
Ga
0.85
As (hereafter material B), with N
DB
= 210
16
cm
3
. Assume
alloys properties as obtained by Vegard law for Al
x
Ga
1x
As:
E
g
= 1.4 + 0.9 x
q = 4.07 1.06 x

r
= 12.9 2.84 x
and
N
CA
= 7.9610
17
cm
3
; N
V A
= 1.4910
19
cm
3
N
CB
= 5.6210
17
cm
3
; N
V B
= 1.3610
19
cm
3
1) Sketch the energy band diagram at thermal equilibrium, using the the anity rule
for the evaluation of valence and conduction band discontinuity.
2) Evaluate the electric eld distribution.
3) Evaluate the extension of the depletion region in each side of the junction and
calculate the peak electric eld.
4) Calculate the excess of minority carriers injected at the boundary of the neutral
region under an applied forward bias of 1 V.
5) [advanced] Compare the extension of the depleted region at equilibrium with the De-
bye length of the majority on both sides. Draw a detailled behavior of the depleted
region.
Solution
1) Band diagram: From Vegard law we can evaluate all relevant paramter:
Al
0.4
Ga
0.6
As : E
GA
= 1.760 eV, q
A
= 3.646 eV,
rA
= 11.764
Al
0.15
Ga
0.85
As : E
GB
= 1.535 eV, q
B
= 3.911 eV,
rB
= 12.474
Band edge discontinuities:
E
C
= q = q
B
+q
A
= 0.265 eV
E
V
= q E
G
= 0.04 eV
Type II heterojunction, see Fig.1 (left).
Work-functions and built-in potential:
q
SA
= q
A
+E
GA
K
B
T log(
N
V A
N
AA
) = 5.3177 eV
q
SB
= q
B
+K
B
T log(
N
CB
N
DB
) = 3.9977 eV
q V
bi
= U
0B
U
0A
= q
SB
q
SA
= 1.32 eV
Notice that our convention is to measure the built-in potential (energy) as the
dierence of the vacuum level from the material on the right to the material on the
left: this may cause the built-in potential to become negative in some cases (like this
one). With the same hypothesis the built-in voltage is also the voltage dierence
of the material on the left with respect to the material of the right (V
A
V
B
).
The students need to be careful to maintain this convention in all the following
calculations.
Type II
n p
U
0
E
vB
E
cB
E
vA
E
cA
E
FB
E
FA
0.265 eV
0.04 eV
U
0
E
v
E
c
E
F
0.265 eV
0.04 eV
1.32 eV
Figura 1: Band diagrams of material A and B separately and equilibrium band diagram
Electron transfer from material with the lower workfunction towards the one with
the higher (or holes in the opposite way). A space charge region builds up across
the heterojunction, like in p n homojunctions, see Fig. 2 (left). The bands bend
downwards if the charge is negative and upwards if positive. The nal equilibrium
band diagram is skeched in Fig. 1 (right).
r
q N
DB
-q N
AA
-x
p
x
n
E -x
p
x
n
Figura 2: Charge distribution and electric eld
2) Electric Field: The analytic form of the charge distribution of Fig. 2 (left) may be
written as:
(x) =

0 x < x
p
q N
AA
x
p
< x < 0
+q N
DB
0 < x < x
n
0 x > x
n
Enforcing charge neutrality, i.e. the same total negative charge in the p-side and
positive chare in the n-side, we have:
_

0
(x) dx =
_
0

(x) dx
q N
DB
x
n
= q N
AA
x
p
Starting from the charge distribution prole and integrating Gauss law
dE
dx
=

it
is possible to derive the electric eld prole. This will resemble the one found in the
homojunction case, except for a discontinuity at x = 0 (which corresponds to the
heterojunction), due to the dierence in the materials relative dielectric constants.
Notice however that at x = 0 the continuity of the displacement vector:
A
E(x =
0

) =
B
E(x = 0
+
) must be in any case be veried (Note:
A
=
0

r,A
and
B
=
0

r,B
with
0
= 8.8510
14
F/cm ).
The analytic expression of the electric eld is:
E(x) =

0 x < x
p

qN
AA

A
(x +x
p
) x
p
< x < 0
qN
DB

B
(x x
n
) 0 < x < x
n
0 x > x
n
where the integration constant have been found enforcing the continuity of the
electric led for x = x
p
and x = x
n
. For x = 0 we have a discontinuity of the
electric eld as expected:
E(x = 0

) =
qN
AA

A
x
p
E(x = 0
+
) =
qN
DB

B
x
n
but the continuity of the electric displacement vector E is veried due to the charge
neutality condition. In fact:

A
E(x = 0

) =
B
E(x = 0
+
)
i.e.:
qN
AA
x
p
= qN
DB
x
n
Since
A
<
B
, the peak electric eld will be located at x = 0

, i.e. in the p-side of

the junction, see Fig. 2 (right).
3) Depletion region widths:
Integrating the electric eld we obtain the electrostatic potential from
d
dx
=
E

.
(x) =

0 x < x
p
qN
AA
2
A
(x +x
p
)
2
x
p
< x < 0

qN
DB
2
B
(x x
n
)
2
+|V
bi
| 0 < x < x
n
|V
bi
| x > x
n
where the continuity of the electrostatic potential in x = 0 yields:
|V
bi
| =
qN
AA
2
A
x
2
p
+
qN
DB
2
B
x
2
n
Solving the system:

|V
bi
| =
qN
AA
2
A
x
2
p
+ +
qN
DB
2
B
x
2
n
q N
DB
x
n
= q N
AA
x
p
x
p
=

2(N)
eq
qN
2
AA
|V
bi
| = 11.8 nm
x
n
=

2(N)
eq
qN
2
DB
|V
bi
| = 295.5 nm
where
(N)
eq
= (
A
N
AA
)//(
B
N
DB
) =

A

B
N
AA
N
DB

A
N
AA
+
B
N
DB
= 2.11910
4
Fcm
Hence the peak electric eld:
|E
max
| =
qN
AA

A
x
p
= 91.115 kV/cm.
4 ) Minority carrier concentration at the border of the depleted region. First of all we
need to recall the relevant relationship in the equilibrium condition.
n side : E
CA
= U
0A
q
A
p side : E
V B
= U
0B
q
B
E
GB
so that
E
CA
E
V B
= U
0A
q
A
U
0B
+ q
B
+E
GB
Recalling the denition of built-in potential
q V
bi
= U
0B
U
0A
and that EC = q = q
B
+ q
A
and EV = q E
G
, we have the
two equivalent forms:
E
CA
E
V B
= q V
bi
E
C
+E
GB
E
CA
E
V B
= q V
bi
E
V
+E
GA
(1)
The minority carrier concentration in the equilibrium condition condition at the
border of the depleted region can be expressed as:
p
0
(x
n
) = N
V B
exp
_

E
F
E
V B
k
B
T
_
n
0
(x
p
) = N
CA
exp
_

E
CA
E
F
k
B
T
_
The product of the minority carriers at the border of the depleted region on the two
sides of the junction is:
p
0
(x
n
) n
0
(x
p
) = N
CA
N
V B
exp
_

E
CA
E
V B
k
B
T
_
(2)
while in the same side of the junction we have:
p
0
(x
n
) n
0
(x
n
) = p
0
(x
n
) N
DB
= N
V B
N
CB
exp
_

E
GB
k
B
T
_
and
p
0
(x
p
) n
0
(x
p
) = n
0
(x
p
) N
AA
= N
V A
N
CA
exp
_

E
GA
k
B
T
_
i.e.:
p
0
(x
n
) =
N
V B
N
CB
N
DB
exp
_

E
GB
k
B
T
_
and
n
0
(x
p
) =
N
V A
N
CA
N
AA
exp
_

E
GA
k
B
T
_
Substituting the above expressions in Eq. (2) and recalling Eq. (1)
p
0
(x
n
) = N
AA
N
V B
N
V A
exp(
qV
bi
E
V
k
B
T
) = 8.75710
6
cm
3
.
n
0
(x
p
) = N
DB
N
CA
N
CB
exp(
qV
bi
E
C
k
B
T
) = 9.48310
11
cm
3
.
The above results hold in equilibrium.
1
Outside equilibrium the externally applied
voltage modies the amount of voltage drop on the junction with respect to the
1
The Fermi energy on the two sides
n side : E
FB
= U
0B
q
B
k
B
T log
_
N
CB
N
DB
_
p side : E
FA
= U
0A
q
A
E
GA
+k
B
T log
_
N
V A
N
AA
_
equilibrium value V
bi
. As already noticed, the built-in voltage is the voltage die-
rence of the material on the left with respect to the material of the right (V
A
V
B
).
On the other hand, any externally applied voltage is conventionally applied to the
p-side of the junction with respect to the n-side. Hence in our case the external
applied voltage will add to the built-in voltage:
V
bi
V
bi
+V
Under forward bias V = 1 V:
p

(x
n
) = p
0
(x
n
) (exp(V/V
T
) 1) = 4.4410
11
cm
3
.
n

(x
p
) = n
0
(x
p
) (exp(V/V
T
) 1) = 4.7910
6
cm
3
.
It is worth noticing that the ratio p(x
n
)/n(x
p
) 10
5
is much larger than the one
expected for a homojunction. In fact, in the homojunction this ratio depends only
on the doping levels and we would expect p(x
n
)/n(x
p
) = N
A
/N
D
= 25.
5 ) The Debye lengths in each side of the heterojunction are:
L
DA
=

A
k
B
T
q
2
N
AA
= 5.8 nm
L
DB
=

B
k
B
T
q
2
N
DB
= 29.9 nm
Hence, the Debye length in the p-side is comparable to the extension of the depleted
region while in the n-side it is negligible. The depleted region on the p-side can
not be considered as abrupt (like in the full depletion approximation) but it has the
behavior shown in Fig. 3. Note that the value of x
p
must be recalculated with the
new accurate charge distribution by solving the Poisson equation.
The analytic form of the charge distribution may now written as:
must be equal at equilibrium, hence:
U
0B
q
B
k
B
T log
_
N
CB
N
DB
_
= U
0A
q
A
E
GA
+k
B
T log
_
N
V A
N
AA
_
q V
bi
= E
C
E
GA
k
B
T log
N
V A
N
CB
N
AA
N
DB
q V
bi
= E
V
E
GB
k
B
T log
N
V A
N
CB
N
AA
N
DB
and therefore we verify that
p
0
(x
n
) = N
AA
N
V B
N
V A
exp(
qV
bi
E
V
k
B
T
) =
N
V B
N
CB
exp(
E
GB
k
B
T
)
N
DB
=
n
2
iB
N
DB
as expected in equilibrium. Analogously for the expression of n
0
(x
p
).
r
q N
DB
-q N
AA
-x
p x
n
L
DA
Figura 3: Detailled charge distribution considering the Debye length of the majority
carriers in the p-side
(x) =

q N
AA
exp
_
x +x
p
L
DA
_
x < x
p
q N
AA
x
p
< x < 0
+q N
DB
0 < x < x
n
0 x > x
n
Enforcing charge neutrality, i.e. the same total negative charge in the p-side and
positive chare in the n-side, we have:
_

0
(x) dx =
_
0

(x) dx
_

0
(x) dx =
_
xp

(x) dx
_
0
xp
(x) dx
i.e.
q N
DB
x
n
= q N
AA
L
DA
+q N
AA
x
p
Dening
x

p
= x
p
+L
DA
we have
q N
DB
x
n
= q N
AA
x

p
Turning to the electric eld, integrating the Gauss equation
dE
dx
=

we obtain
E(x) =

qN
AA

A
L
DA
exp
_
x +x
p
L
DA
_
x < x
p

qN
AA

A
_
x +x

p
_
x
p
< x < 0
qN
DB

B
(x x
n
) 0 < x < x
n
0 x > x
n
where the integration constant have been found by enforcing the continuity of the
electric led for x = x
p
and x = x
n
and the conditionlim
x
E(x) = 0. Notice
that for x = 0 we have a discontinuity of the electric eld:
E(x = 0

) =
qN
AA

A
x

p
E(x = 0
+
) =
qN
DB

B
x
n
but the continuity of the electric displacement vector E is veried due to the charge
neutality condition. In fact:

A
E(x = 0

) =
B
E(x = 0
+
)
i.e.:
qN
AA
x

p
= qN
DB
x
n
Integrating the electric eld we obtain the electrostatic potential from
d
dx
=
E

.
(x) =

qN
AA

A
L
2
DA
exp
_
x +x
p
L
DA
_
x < x
p
qN
AA
2
A
_
_
x +x

p
_
2
+L
2
DA
_
x
p
< x < 0

qN
DB
2
B
(x x
n
)
2
+|V
bi
| 0 < x < x
n
|V
bi
| x > x
n
where the continuity of the electrostatic potential in x = 0 yields:
|V
bi
| =
qN
AA
2
A
_
x

p
2
+L
2
DA
_
+
qN
DB
2
B
(x
n
)
2
which reduces to the standard expression for L
DA
0.
Solving the system:

|V
bi
| =
qN
AA
2
A
_
x

p
2
+L
2
DA
_
+
qN
DB
2
B
(x
n
)
2
q N
DB
x
n
= q N
AA
x

p
Dening:
|V

bi
| = |V
bi
|
qN
AA
2
A
L
2
DA
= 1.307 V
we have
x

p
=

2(N)
eq
qN
2
AA
|V

bi
| = 11.765 nm
x
n
=
N
AA
N
DB
x

p
= 294.1 nm
and nally:
x
p
= x

p
L
DA
= 5.948 nm
Exercise 2 (solved in class)
Consider a pn heterojunction between Al
0.3
Ga
0.7
As (hereafter material A), with N
AA
=
110
16
cm
3
and GaAs (hereafter material B), with N
DB
= 510
16
cm
3
. Assume alloys
properties as obtained by Vegard law for Al
x
Ga
1x
As:
E
g
= 1.41 + 0.87 x
q = 4.07 1.06 x

r
= 12.9 2.84 x
and
N
CA
= 6.9910
17
cm
3
; N
V A
= 1.4310
19
cm
3
N
CB
= 4.710
17
cm
3
; N
V B
= 710
18
cm
3
1) Sketch the energy band diagram at thermal equilibrium, using the the anity rule
for the evaluation of valence and conduction band discontinuity.
2) Evaluate the electric eld distribution.
3) Evaluate the extension of the depletion region in each side of the junction and
calculate the peak electric eld.
4) Calculate the excess of minority carriers injected at the boundary of the neutral
region under an applied forward bias of 1 V.
5) Calculate the depletion capacitance for an applied voltage V = 5 V (voltages are
applied to the p-side with respect to the n-side).
Solution
1) Band diagram
From Vegard law we can evaluate all relevant paramter:
Al
0.3
Ga
0.7
As : E
GA
= 1.67 eV, q
A
= 3.75 eV,
rA
= 12.05
Band edge discontinuities:
E
C
= q = q
B
+q
A
= 0.32 eV
E
V
= q E
G
= 0.06 eV
Type II heterojunction. Work-functions and built-in potential:
q
SA
= q
A
+E
GA
K
B
T log(
N
V A
N
AA
) = 5.2311 eV
q
SB
= q
B
+K
B
T log(
N
CB
N
DB
) = 4.1283 eV
q V
bi
= U
0B
U
0A
= q
SB
q
SA
= 1.103 eV
The qualitative behavior of the junction is like Exercise n. 1 (see Fig. 1)
2-3) The qualitative behavior of the charge and electric eld is like Exercise n. 1 (see
Fig. 2).
(N)
eq
= (
A
N
AA
)//(
B
N
DB
) =

A

B
N
AA
N
DB

A
N
AA
+
B
N
DB
= 8.985610
3
Fcm
x
p
=

2(N)
eq
qN
2
AA
|V
bi
| = 351.95 nm
x
n
=

2(N)
eq
qN
2
DB
|V
bi
| = 70.39 nm
Hence the peak electric eld:
|E
max
| =
qN
AA

A
x
p
= 52.8 kV/cm.
Since
A
<
B
, the peak electric eld will be located at x = 0

, i.e. in the p-side of

the junction.
4 ) Minority carrier concentration at the border of the depleted region.
p
0
(x
n
) = N
AA
N
V B
N
V A
exp(
qV
bi
E
V
k
B
T
) = 1.845410
4
cm
3
.
n
0
(x
p
) = N
DB
N
CA
N
CB
exp(
qV
bi
E
C
k
B
T
) = 1.272810
7
cm
3
.
The above results hold in equilibrium. Outside equilibrium the externally applied
voltage modies the amount of voltage drop on the junction with respect to the
equilibrium value V
bi
. As already noticed, the built-in voltage is the voltage die-
rence of the material on the left with respect to the material of the right (V
A
V
B
).
On the other hand, any externally applied voltage is conventionally applied to the
p-side of the junction with respect to the n-side. Hence in our case the external
applied voltage will add to the built-in voltage:
V
bi
V
bi
+V
Under forward bias V = 1 V:
p

(x
n
) = p
0
(x
n
) (exp(V/V
T
) 1) = 9.326910
12
cm
3
.
n

(x
p
) = n
0
(x
p
) (exp(V/V
T
) 1) = 6.432510
9
cm
3
.
5) Depletion capacitance.
The charge stored in the depleted region (e.g. in the n-side) is:
Q = qN
AA
x
p
=
_
2q(N)
eq
(|V
bi
+V |)
and the depletion capacitance is
C
depl
=
dQ
dV
=

q(N)
eq
2(|V
bi
+V |)
For V = 5 V: C
depl
= 1.085310
8
F/cm.
Exercise n. 3
Consider a np heterojunction between Al
0.3
Ga
0.7
As (hereafter material A), with N
DA
=
10
17
cm
3
and GaAs (hereafter material B), with N
AB
= 210
18
cm
3
. Assume alloys
properties as obtained by Vegard law for Al
x
Ga
1x
As:
E
g
= 1.4 + 0.9 x
q = 4.07 1.06 x

r
= 12.9 2.84 x
and
N
CA
= 6.9910
17
cm
3
;N
V A
= 1.4310
19
cm
3
N
CB
= 4.710
17
cm
3
;N
V B
= 710
18
cm
3
1) Sketch the energy band diagram at thermal equilibrium, using the the anity rule
for the evaluation of valence and conduction band discontinuity.
2) Evaluate the electric eld distribution.
3) Evaluate the extension of the depletion region in each side of the junction and
calculate the peak electric eld.
4) Calculate the excess of minority carriers injected at the boundary of the neutral
region under an applied forward bias of 1 V.
5) [advanced] Compare the extension of the depleted region at equilibrium with the De-
bye length of the majority on both sides. Draw a detailled behavior of the depleted
region.
Solution
From Vegard law we can evaluate all relevant paramter:
Al
0.3
Ga
0.7
As : E
GA
= 1.670 eV, q
A
= 3.75 eV,
rA
= 12.05
GaAs : E
GB
= 1.4 eV, q
B
= 4.07 eV,
rB
= 12.9
1) Band diagram:
E
C
= q = q
B
+q
A
= 0.32 eV
E
V
= q E
G
= 0.05 eV
Type II heterojunction, see Fig.4 (left).
Work-functions and built-in potential:
q
SA
= q
A
+K
B
T log(
N
CA
N
DA
) = 3.8 eV
q
SB
= q
B
+E
GB
K
B
T log(
N
V B
N
AB
) = 5.4374 eV
q V
bi
= U
0B
U
0A
= q
SB
q
SA
= 1.738 eV
Notice that our convention is to measure the built-in potential (energy) as the
dierence of the vacuum level from the material on the right to the material on the
left. With the same hypothesis the built-in voltage is also the voltage dierence
of the material on the left with respect to the material of the right (V
A
V
B
).
The students need to be careful in maintaining this convention in all the following
calculations.
Type II
p
GaAs
n
AlGaAs
U
0
E
vB
E
cB
E
vA
E
cA
E
FB
E
FA
0.32 eV
0.05 eV
U
0
E
v
E
c
E
F
0.32 eV
0.05 eV
1.738 eV
Figura 4: Band diagrams of material A and B separately and equilibrium band diagram
A space charge region builds up across the heterojunction, as in np homojunctions,
see Fig. 5 (left). The bands bend downwards if the charge is negative and upwards
if positive. The nal equilibrium band diagram is skeched in Fig. 4 (right).
r
q N
DA
-q N
AB
-x
n
x
p
E
x
p
-x
n
Figura 5: Charge distribution and electric eld
2) Electric Field: The analytic form of the charge distribution of Fig. 5 (left) may be
written as:
(x) =

0 x < x
p
+q N
DA
x
n
< x < 0
q N
AB
0 < x < x
p
0 x > x
n
Enforcing charge neutrality, i.e. the same total negative charge in the p-side and
positive chare in the n-side, we have:
_

0
(x) dx =
_
0

(x) dx
q N
DA
x
n
= q N
AB
x
p
Starting from the charge distribution prole and integrating Gauss law
dE
dx
=

it
is possible to derive the electric eld prole. This will resemble the one found in the
homojunction case, except for a discontinuity at x = 0 (which corresponds to the
heterojunction), due to the dierence in the materials relative dielectric constants.
Notice however that at x = 0 the continuity of the displacement vector:
A
E(x =
0

) =
B
E(x = 0
+
) must be in any case veried (Note:
A
=
0

r,A
and
B
=
0

r,B
with
0
= 8.8510
14
F/cm ).
The analytic expression of the electric eld is:
E(x) =

0 x < x
n
qN
DA

A
(x +x
n
) x
n
< x < 0

qN
AB

B
(x x
p
) 0 < x < x
p
0 x > x
p
where the integration constant have been found enforcing the continuity of the
electric led for x = x
n
and x = x
p
. For x = 0 we have a discontinuity of the
electric eld as expected:
E(x = 0

) =
qN
DA

A
x
n
E(x = 0
+
) =
qN
AB

B
x
p
but the continuity of the electric displacement vector E is veried due to the charge
neutality condition. In fact:

A
E(x = 0

) =
B
E(x = 0
+
)
i.e.:
qN
DA
x
n
= qN
AB
x
p
Since
SA
<
SB
, the peak electric eld will be located at x = 0

, i.e. in the n-side

of the junction, see Fig. 5 (right).
3) Depletion region widths:
Integrating the electric eld we obtain the electrostatic potential from
d
dx
=
E

.
(x) =

0 x < x
n

qN
DA
2
A
(x +x
n
)
2
x
n
< x < 0
qN
AB
2
B
(x x
p
)
2
V
bi
0 < x < x
p
V
bi
x > x
p
where the continuity of the electrostatic potential in x = 0 yields:
V
bi
=
qN
DA
2
A
x
2
n
+
qN
AB
2
B
x
2
p
Solving the system:

V
bi
=
qN
DA
2
A
x
2
n
+
qN
AB
2
B
x
2
p
qN
DA
x
n
= qN
AB
x
p
x
p
=

2(N)
eq
qN
2
AB
V
bi
= 6.48 nm
x
n
=

2(N)
eq
qN
2
DA
V
bi
= 129.66 nm
where
(N)
eq
= (
A
N
DA
)//(
B
N
AB
) =

A

B
N
DA
N
AB

A
N
DA
+
B
N
AB
= 1.018810
5
Fcm
Hence the peak electric eld:
|E
max
| =
qN
DA

A
x
n
= 194.53 kV/cm.
4 ) Minority carrier concentration at the border of the depleted region.
First of all we need to recall the relevant relationship in the equilibrium condition.
2
n side : E
V A
= U
0A
q
A
E
GA
p side : E
CB
= U
0B
q
B
2
The Fermi energy on the two sides
n side : E
FA
= U
0A
q
A
k
B
T log
_
N
CA
N
DA
_
p side : E
FB
= U
0B
q
B
E
GB
+k
B
T log
_
N
V B
N
AB
_
must be equal at equilibrium, hence:
U
0A
q
A
k
B
T log
_
N
CA
N
DA
_
= U
0B
q
B
E
GB
+k
B
T log
_
N
V B
N
AB
_
so that
E
CB
E
V A
= U
0B
q
B
U
0A
+q
A
+E
GA
Recalling the denition of built-in potential:
q V
bi
= U
0B
U
0A
we have
E
CB
E
V A
= q V
bi
+ E
C
+E
GA
(3)
The minority carrier concentration in the equilibrium condition condition at the
border of the depleted region can be expressed as:
p
0
(x
n
) = N
V A
exp
_

E
FA
E
V A
k
B
T
_
n
0
(x
p
) = N
CB
exp
_

E
CB
E
FB
k
B
T
_
The product of the minority carriers at the border of the depleted region on the two
sides of the junction is:
p
0
(x
n
) n
0
(x
p
) = N
V A
N
CB
exp
_

E
CB
E
V A
k
B
T
_
(4)
while in the same side of the junction we have:
p
0
(x
n
) n
0
(x
n
) = p
0
(x
n
) N
DA
= N
V A
N
CA
exp
_

E
GA
k
B
T
_
and
p
0
(x
p
) n
0
(x
p
) = n
0
(x
p
) N
AB
= N
V B
N
CB
exp
_

E
GB
k
B
T
_
i.e.:
p
0
(x
n
) =
N
V A
N
CA
N
DA
exp
_

E
GA
k
B
T
_
and
n
0
(x
p
) =
N
V B
N
CB
N
AB
exp
_

E
GB
k
B
T
_
q V
bi
= E
C
+E
GB
k
B
T log
N
V B
N
CA
N
AB
N
DA
q V
bi
= E
V
+E
GA
k
B
T log
N
V B
N
CA
N
AB
N
DA
therefore we verify that :
p
0
(x
n
) = N
AB
N
V A
N
V B
exp(
qV
bi
+ E
V
k
B
T
) =
N
V A
N
CA
exp(
E
GA
k
B
T
)
N
DA
=
n
2
iA
N
DA
as expected in equilibrium. Analogously for the expression of n
0
(x
p
).
Substituting the above expressions in Eq. (4) and recalling Eq. (3)
p
0
(x
n
) = N
AB
N
V A
N
V B
exp(
qV
bi
+ E
V
k
B
T
) = 2.610
10
cm
3
.
n
0
(x
p
) = N
DA
N
CB
N
CA
exp(
qV
bi
+ E
C
k
B
T
) = 1.38710
7
cm
3
.
Outside equilibrium the externally applied voltage modies the amount of voltage
drop on the junction with respect to the equilibrium value V
bi
. As already noticed,
the built-in voltage is the voltage dierence of the material on the left with respect
to the material of the right (V
A
V
B
). On the other hand, any externally applied
voltage V is conventionally applied to the p-side of the junction with respect to the
n-side. Hence in our case the external applied voltage will be subtracted from the
built-in voltage:
V
bi
V
bi
V
Under forward bias V = 1 V:
p

(x
n
) = p
0
(x
n
) (exp(V/V
T
) 1) = 1.310
7
cm
3
.
n

(x
p
) = n
0
(x
p
) (exp(V/V
T
) 1) = 710
9
cm
3
.
It is worth to note that the ratio n(x
p
)/p(x
n
) 510
2
is much larger than the
one expected for a homojunction. In fact, in the homojunction this ratio depends
only on the doping levels and we would expect n(x
p
)/p(x
n
) = N
D
/N
A
= 510
2
.
5 ) Proceed like explained in Exercise 1.
Exercise n. 4
Consider a np heterojunction between Al
0.4
Ga
0.6
As (hereafter material A), with N
DA
=
510
16
cm
3
and GaAs (hereafter material B), with N
AB
= 10
17
cm
3
. The material
parameters to be used (please, discard Vegard rule in this case) are as follows:
Al
0.4
Ga
0.6
As : E
GA
= 1.760 eV, q
A
= 3.646 eV,
rA
= 11.764
N
CA
= 7.963210
17
cm
3
, N
V A
= 1.489810
19
cm
3
GaAs : E
GB
= 1.42 eV, q
B
= 4.07 eV,
rB
= 13.1
N
CB
= 4.710
17
cm
3
, N
V B
= 910
18
cm
3
(a) Draw the qualitative band diagram in thermodynamic equilibrium, by exploiting
the anity rule;
(b) Draw the charge density and electric eld distributions at thermodynamic equili-
brium, and calculate the depleted region widths in each material and the maximum
value of the electric eld;
(c) Draw the qualitative behavior of the depletion capacitance versus the applied bias
voltage and calculate its value (per unit area) for V = 0 V and V = 2 V. External
voltage is applied on the p-side with respect to the n-side.
Solution
(a) Band diagram
Band edge discontinuities
E
C
= q = q
B
+q
A
= 0.4240 eV
E
V
= q E
G
= 0.0840 eV
Type II heterostructure. The qualitative behavior of the junction is as in
Exercise n. 3.
q
SA
= q
A
+K
B
T log(
N
CA
N
DA
) = 3.7180 eV
q
SB
= q
B
+E
GB
K
B
T log(
N
V B
N
AB
) = 5.3730 eV
q V
bi
= U
0B
U
0A
= q
SB
q
SA
= 1.6550 eV
(b) Chrage, electric elded regions.
The qualitative behavior of the junction is as in Exercise n. 3. The peak electric
eld will be located at x = 0

, i.e. in the n-side of the junction.

(N)
eq
= (
A
N
DA
)//(
B
N
AB
) =

A

B
N
DA
N
AB

A
N
DA
+
B
N
AB
= 3.592510
4
Fcm
x
p
=

2(N)
eq
qN
2
AB
V
bi
= 86.21 nm
x
n
=

2(N)
eq
qN
2
DA
V
bi
= 172.42 nm
Hence the peak electric eld:
|E
max
| =
qN
DA

A
x
n
= 132.49 kV/cm.
Monority carriers at equilibrium:
p
0
(x
n
) = 9.480910
10
cm
3
n
0
(x
p
) = 8.075710
5
cm
3
(c) Depletion capacitance Out of equilibrium:
V
bi
V
bi
V
The charge stored in the depleted region (e.g. in the n-side) is:
Q = qN
DA
x
n
=
_
2q(N)
eq
(V
bi
V )
and the depletion capacitance is (see Fig.6)
C
depl
=
dQ
dV
=

q(N)
eq
2(V
bi
V )
V
bi
4.16
2.80
C F/cm
depl
Figura 6: Depletion Capacitance
For V = 0: C
depl
= 4.167210
8
F/cm. For V = 2 V: C
depl
= 2.804110
8
F/cm.
Exercise n. 5
Consider a n p heterojunction between InP (hereafter material A), with N
DA
= 7
10
16
cm
3
and In
0.53
Ga
0.47
As (hereafter material B), with N
AB
= 710
17
cm
3
. Assume
alloys properties as listed below:
InP : E
GA
= 1.35 eV, q
A
= 4.2 eV,
rA
= 12.3,
N
CA
= 810
17
cm
3
, N
V A
= 2.510
19
cm
3
In
0.53
Ga
0.47
As : E
GB
= 0.8 eV, q
B
= 4.5 eV,
rB
= 14.0,
N
CB
= 610
17
cm
3
, N
V B
= 910
18
cm
3
1) Draw the energy band diagram at thermal equilibrium, using the the anity rule
for the evaluation of valence and conduction band discontinuity.
2) Evaluate the electric eld distribution.
3) Evaluate the extension of the depletion region in each side of the junction and
calculate the peak electric eld.
4) Calculate the excess of minority carriers injected at the boundary of the neutral
region under an applied forward bias of 0.6 V (voltages are applied to the p-side
with respect to the n-side).
5) Calculate the depletion capacitance for an applied voltage V = 1 V.
Solution
1) Band Diagram.
EC = q = q
B
+q
A
= 0.3 eV
EV = q E
G
= 0.25 eV
Type I heterojunction.
Work-functions and built-in potential:
q
SA
= q
A
+K
B
T log(
N
CA
N
DA
) = 4.2721 eV
q
SB
= q
B
+E
GB
K
B
T log(
N
V B
N
AB
) = 5.1830 eV
q V
bi
= U
0B
U
0A
= q
SB
q
SA
= 0.8413 eV
Electron move from material A to material B. A space charge region builds up across
the heterojunction, see Fig. 7 (right). The bands bend downwards if the charge is
negative and upwards if positive. The nal equilibrium band diagram is skeched in
Fig. ?? (left).
U
0
E
v
E
c
E
F
0.3 eV
0.25 eV
0.91 eV
InP In Ga As
0.53 0.47
E
x
p
-x
n
r
q N
DA
-q N
AB
-x
n
x
p
Figura 7: Band diagram, charge distribution and electric eld
2) Electric Field.
Integrating the Gauss law, the analytic expression of the electric eld is:
E(x) =

0 x < x
n
qN
DA

A
(x +x
n
) x
n
< x < 0

qN
AB

B
(x x
p
) 0 < x < x
p
0 x > x
p
For x = 0 we have a discontinuity of the electric eld as expected:
E(x = 0

) =
qN
DA

A
x
n
E(x = 0
+
) =
qN
AB

B
x
p
but the continuity of the electric displacement vector E due to the charge neutality
condition qN
DA
x
n
= qN
AB
x
p
. Since
SA
<
SB
, the peak electric eld will be located
at x = 0

, i.e. in the n-side of the junction, see Fig. 7 (right).

3) Depletion region widths.
(N)
eq
= (
A
N
DA
)//(
B
N
AB
) =

A

B
N
DA
N
AB

A
N
DA
+
B
N
AB
= 7.553510
3
Fcm
x
p
=

2(N)
eq
qN
2
AB
V
bi
= 4.1884 nm
x
n
=

2(N)
eq
qN
2
DA
V
bi
= 418.84 nm
Hence the peak electric eld:
|E
max
| =
qN
DA

A
x
n
= 43.094 kV/cm.
4 ) Minority carrier concentration at the border of the depleted region.
p
0
(x
n
) = N
AB
N
V A
N
V B
exp(
qV
bi
+ E
V
k
B
T
) = 0.0805 cm
3
.
n
0
(x
p
) = N
DA
N
CB
N
CA
exp(
qV
bi
+ E
C
k
B
T
) = 3.344910
5
cm
3
.
Outside equilibrium:
V
bi
V
bi
V
Under forward bias V = 0.6 V:
p

(x
n
) = p
0
(x
n
) (exp(V/V
T
) 1) = 3.118310
8
cm
3
.
n

(x
p
) = n
0
(x
p
) (exp(V/V
T
) 1) = 1.295010
15
cm
3
.
5 ) Depletion capacitance.
C
depl
=
dQ
dV
=

q(N)
eq
2(V
bi
V )
For V = 1 V: C
depl
= 1.440910
8
F/cm.
Exercise n. 6
Consider a np heterojunction between In
0.53
Ga
0.47
As (hereafter material A), with N
DA
=
710
17
cm
3
and InP (hereafter material B), with N
AB
= 710
16
cm
3
. Assume alloys
properties as listed below:
In
0.53
Ga
0.47
As : E
GA
= 0.8 eV, q
A
= 4.5 eV,
rA
= 14.0,
N
CA
= 610
17
cm
3
, N
V A
= 910
18
cm
3
InP : E
GB
= 1.35 eV, q
B
= 4.2 eV,
rB
= 12.3,
N
CB
= 810
17
cm
3
, N
V B
= 2.510
19
cm
3
1) Draw the energy band diagram at thermal equilibrium, using the the anity rule
for the evaluation of valence and conduction band discontinuity.
2) Evaluate the electric eld distribution.
3) Evaluate the extension of the depletion region in each side of the junction and
calculate the peak electric eld.
4) Calculate the excess of minority carriers injected at the boundary of the neutral
region under an applied forward bias of 0.6 V (voltages are applied to the p-side
with respect to the n-side).
5) Calculate the depletion capacitance for an applied voltage V = 10 V.
6) Compare the extension of the depleted region at equilibrium with the Debye length
of the majority on both sides.
Solution
1) Band Diagram.
EC = q = q
B
+q
A
= 0.3 eV
EV = q E
G
= 0.25 eV
Type I heterojunction.
Work-functions and built-in potential:
q
SA
= q
A
+K
B
T log(
N
CA
N
DA
) = 4.4960 eV
q
SB
= q
B
+E
GB
K
B
T log(
N
V B
N
AB
) = 5.3373 eV
q V
bi
= U
0B
U
0A
= q
SB
q
SA
= 0.91 eV
A space charge region builds up across the heterojunction, see Fig. 8 (right). The
bands bend downwards if the charge is negative and upwards if positive. The nal
equilibrium band diagram is skeched in Fig. 8 (left).
U
0
E
v
E
c
E
F
0.3 eV
0.25 eV
0.91 eV
InP
In Ga As
0.53 0.47
E
x
p -x
n
r
q N
DA
-q N
AB
-x
n
x
p
Figura 8: Band diagram, charge distribution and electric eld
2) Electric Field.
Integrating the Gauss law, the analytic expression of the electric eld is:
E(x) =

0 x < x
n
qN
DA

A
(x +x
n
) x
n
< x < 0

qN
AB

B
(x x
p
) 0 < x < x
p
0 x > x
p
For x = 0 we have a discontinuity of the electric eld as expected:
E(x = 0

) =
qN
DA

A
x
n
E(x = 0
+
) =
qN
AB

B
x
p
but the continuity of the electric displacement vector E due to the charge neutality
condition qN
DA
x
n
= qN
AB
x
p
. Since
SA
>
SB
, the peak electric eld will be located
at x = 0
+
, i.e. in the p-side of the junction, see Fig. 8 (right).
3) Depletion region widths.
(N)
eq
= (
A
N
DA
)//(
B
N
AB
) =

A

B
N
DA
N
AB

A
N
DA
+
B
N
AB
= 7.553510
3
Fcm
x
p
=

2(N)
eq
qN
2
AB
V
bi
= 402.63 nm
x
n
=

2(N)
eq
qN
2
DA
V
bi
= 4.0263 nm
Hence the peak electric eld:
|E
max
| =
qN
AB

B
x
p
= 41.426 kV/cm.
4 ) Minority carrier concentration at the border of the depleted region.
p
0
(x
n
) = N
AB
N
V A
N
V B
exp(
qV
bi
+ E
V
k
B
T
) = 3.344910
5
cm
3
.
n
0
(x
p
) = N
DA
N
CB
N
CA
exp(
qV
bi
+ E
C
k
B
T
) = 0.0805 cm
3
.
Outside equilibrium:
V
bi
V
bi
V
Under forward bias V = 0.6 V:
p

(x
n
) = p
0
(x
n
) (exp(V/V
T
) 1) = 1.295010
15
cm
3
.
n

(x
p
) = n
0
(x
p
) (exp(V/V
T
) 1) = 3.118310
8
cm
3
.
5 ) Depletion capacitance.
C
depl
=
dQ
dV
=

q(N)
eq
2(V
bi
V )
For V = 10 V: C
depl
= 7.465810
9
F/cm.
6 ) Debye lenght. The Debye lengths in each side of the heterojunction are:
L
DA
=

A
k
B
T
q
2
N
DA
= 0.38308 nm x
n
L
DB
=

B
k
B
T
q
2
N
AB
= 4.0869 nm x
p
Both lenghts are negligible with respect to the extension of the depletion regions.
No further analysis is required.