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Short-Circuit indication in DC Low-Voltage Systems

Introduction
Here is a Short-Circuit Protection circuit to derive the additional power supply from the main circuit. The main circuit is protected from any damage due to short-circuit in the additional power supply circuit by cutting off the derived supply voltage. The derived supply voltage restores automatically when shorting is removed. An LED is used to indicate whether short-circuit exists or not.

Short circuit indication circuit

Assemble the circuit on a general-purpose PCB and enclose in a suitable cabinet. Connect O/P1 and O/P2 terminals on the front panel of the cabinet. Also connect the mains power cord to feed 230V AC to the transformer. Connect LED1 and LED2 for visual indication. In the main power supply circuit, 230V AC is stepped down by transformer X1 (230V AC primary to 0-9V, 300mA secondary), rectified by a fullwave rectifier comprising diodes D1 through D4, filtered by capacitor C1 and regulated by IC 7805 to give regulated 5V (O/P1). Transistors SK100 and BC547 are used to derive the secondary output of around 5V (O/P2) from the main 5V supply (O/P1). Working of the ShortCircuit Protection circuit is simple. When the 5V DC output from regulator IC 7805 is available, transistor BC547 conducts through resistors R1 and R3 and LED1. As a result, transistor SK100 conducts and short-circuit protected 5V DC output appears across O/P2 terminals. The green LED (LED2) glows to indicate the

same, while the red LED (LED1) remains off due to the presence of the same voltage at both of its ends. When O/P2 terminals short, BC547 cuts off due to grounding of its base. As a result, SK100 is also cut-off. Thus during short-circuit, the green LED (LED2) turns off and the red LED (LED1) glows. Capacitors C2 and C3 across the main 5V output (O/P1) absorb the voltage fluctuations occurring due to short-circuit in O/P2, ensuring disturbance-free O/P1. The design of the circuit is based on the relationship given below: RB = (HFE X Vs)/(1.3 X IL) where, RB = Base resistances of transistors of SK100 and BC547 HFE = 200 for SK100 and 350 for BC547 Switching Voltage Vs = 5V 1.3 = Safety factor IL = Collector-emitter current of transistors

Short Circuit Protection Diagram


Assemble the circuit on a general-purpose PCB and enclose in a suitable cabinet. Connect O/P1 and O/P2 terminals on the front panel of the cabinet. Also connect the mains power cord to feed 230V AC to the transformer. Connect LED1 and LED2 for visual indication.

Resistor

A resistor is a passive two-terminal electrical component that implements electrical resistance as a circuit element. The current through a resistor is in direct proportion to the voltage across the resistor's terminals. Thus, the ratio of the voltage applied across a resistor's terminals to the intensity of current through the circuit is called resistance. This relation is represented by Ohm's law:

Resistors are common elements of electrical networks and electronic circuits and are ubiquitous in most electronic equipment. Practical resistors can be made of various compounds and films, as well as resistance wire (wire made of a high-resistivity alloy, such as nickel-chrome). Resistors are also implemented within integrated circuits, particularly analog devices, and can also be integrated into hybrid and printed circuits. The electrical functionality of a resistor is specified by its resistance: common commercial resistors are manufactured over a range of more than nine orders of magnitude. When specifying that resistance in an electronic design, the required precision of the resistance may require attention to the manufacturing tolerance of the chosen resistor, according to its specific application. The temperature coefficient of the resistance may also be of concern in some precision applications. Practical resistors are also specified as having a maximum power rating which must exceed the anticipated power dissipation of that resistor in a particular circuit: this is mainly of concern in power electronics applications. Resistors with higher power ratings are physically larger and may require heat sinks. In a high-voltage circuit, attention must sometimes be paid to the rated maximum working voltage of the resistor. Practical resistors have a series inductance and a small parallel capacitance; these specifications can be important in high-frequency applications. In a low-noise amplifier or pre-amp, the noise characteristics of a resistor may be an issue. The unwanted inductance, excess noise, and temperature coefficient are mainly dependent on the technology used in manufacturing the resistor. They are not normally specified individually for a particular family of resistors manufactured using a particular technology.[1] A family of discrete resistors is also characterized according to its form factor, that is, the size of the device and the position of its leads (or terminals) which is relevant in the practical manufacturing of circuits using them.

Capacitor
From Wikipedia, the free encyclopedia

Jump to: navigation, search This article is about the electronic component. For the physical phenomenon, see capacitance. For an overview of various kinds of capacitors, see types of capacitor.

Miniature low-voltage capacitors, by a cm ruler

A typical electrolytic capacitor A capacitor (formerly known as condenser) is a passive two-terminal electrical component used to store energy in an electric field. The forms of practical capacitors vary widely, but all contain at least two electrical conductors separated by a dielectric (insulator); for example, one common construction consists of metal foils separated by a thin layer of insulating film. Capacitors are widely used as parts of electrical circuits in many common electrical devices. When there is a potential difference (voltage) across the conductors, a static electric field develops across the dielectric, causing positive charge to collect on one plate and negative charge on the other plate. Energy is stored in the electrostatic field. An ideal capacitor is characterized by a single constant value, capacitance, measured in farads. This is the ratio of the electric charge on each conductor to the potential difference between them. The capacitance is greatest when there is a narrow separation between large areas of conductor, hence capacitor conductors are often called "plates," referring to an early means of construction. In practice, the dielectric between the plates passes a small amount of leakage current and also has an electric field strength limit, resulting in a breakdown voltage, while the conductors and leads introduce an undesired inductance and resistance.

Capacitors are widely used in electronic circuits for blocking direct current while allowing alternating current to pass, in filter networks, for smoothing the output of power supplies, in the resonant circuits that tune radios to particular frequencies, in electric power transmission systems for stabilizing voltage and power flow, and for many other purposes.

Bipolar junction transistor


From Wikipedia, the free encyclopedia

(Redirected from PNP transistor) Jump to: navigation, search BJT redirects here. For the Japanese language proficiency test, see Business Japanese Proficiency Test.
PNP

Schematic symbols for PNP BJTs. A bipolar (junction) transistor (BJT) is a three-terminal electronic device constructed of doped semiconductor material and may be used in amplifying or switching applications. Bipolar transistors are so named because their operation involves both electrons and holes. Charge flow in a BJT is due to bidirectional diffusion of charge carriers across a junction between two regions of different charge concentrations. This mode of operation is contrasted with unipolar transistors, such as field-effect transistors, in which only one carrier type is involved in charge flow due to drift. By design, most of the BJT collector current is due to the flow of charges injected from a high-concentration emitter into the base where they are minority carriers that diffuse toward the collector, and so BJTs are classified as minority-carrier devices.

[edit] Introduction

NPN BJT with forward-biased EB junction and reverse-biased BC junction

An NPN transistor can be considered as two diodes with a shared anode. In typical operation, the base-emitter junction is forward biased and the basecollector junction is reverse biased. In an NPN transistor, for example, when a positive voltage is applied to the baseemitter junction, the equilibrium between thermally generated carriers and the repelling electric field of the depletion region becomes unbalanced, allowing thermally excited electrons to inject into the base region. These electrons wander (or "diffuse") through the base from the region of high concentration near the emitter towards the region of low concentration near the collector. The electrons in the base are called minority carriers because the base is doped p-type which would make holes the majority carrier in the base. To minimize the percentage of carriers that recombine before reaching the collectorbase junction, the transistor's base region must be thin enough that carriers can diffuse across it in much less time than the semiconductor's minority carrier lifetime. In particular, the thickness of the base must be much less than the diffusion length of the electrons. The collectorbase junction is reverse-biased, and so little electron injection occurs from the collector to the base, but electrons that diffuse through the base towards the collector are swept into the collector by the electric field in the depletion region of the collectorbase junction. The thin shared base and asymmetric collectoremitter doping is what differentiates a bipolar transistor from two separate and oppositely biased diodes connected in series.

[edit] Voltage, current, and charge control


The collectoremitter current can be viewed as being controlled by the baseemitter current (current control), or by the baseemitter voltage (voltage control). These views are related by the currentvoltage relation of the baseemitter junction, which is just the usual exponential currentvoltage curve of a p-n junction (diode).[1] The physical explanation for collector current is the amount of minority carriers in the base region.[1][2][3] Due to low level injection (in which there are much fewer excess carriers than normal majority carriers) the ambipolar diffusion rate (in which the excess majority and minority carriers flow at the same rate) is in effect determined by the excess minority carriers. Detailed models of transistor action, such as the GummelPoon model, account for the distribution of this charge explicitly to explain transistor behavior more exactly.[4] The charge-control view easily handles phototransistors, where minority carriers in the base region are created by the absorption of photons, and handles the dynamics of turn-off, or recovery time, which depends on charge in the base region recombining. However, because base charge is not a signal that is visible at the terminals, the current- and voltage-control views are generally used in circuit design and analysis. In analog circuit design, the current-control view is sometimes used because it is approximately linear. That is, the collector current is approximately F times the base current. Some basic circuits can be designed by assuming that the emitterbase voltage is

approximately constant, and that collector current is beta times the base current. However, to accurately and reliably design production BJT circuits, the voltage-control (for example, EbersMoll) model is required.[1] The voltage-control model requires an exponential function to be taken into account, but when it is linearized such that the transistor can be modelled as a transconductance, as in the EbersMoll model, design for circuits such as differential amplifiers again becomes a mostly linear problem, so the voltage-control view is often preferred. For translinear circuits, in which the exponential IV curve is key to the operation, the transistors are usually modelled as voltage controlled with transconductance proportional to collector current. In general, transistor level circuit design is performed using SPICE or a comparable analog circuit simulator, so model complexity is usually not of much concern to the designer.

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