Beruflich Dokumente
Kultur Dokumente
May 2005
FDS6900AS
General Description
8.2A, 30V
6.9A, 30V
1
2
3
Q2 Q1
8
7
6
5
Dual N-Channel SyncFet
SO-8
Pin 1
SO-
D1 D1 S
S2 G2 G
Parameter
Q2
30
(Note 1a)
Q1
30 20 6.9 20 2 1.6 1 0.9 55 to +150
Units
V V A W
- Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation
Drain Current
20 8.2 30
TJ, TSTG
Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
78 40
C/W C/W
FDS6900AS
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSS
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage
(Note 2)
Test Conditions
VGS = 0 V, ID = 1 mA ID = 250 uA VGS = 0 V, ID = 10 mA, Referenced to 25C ID = 250 A, Referenced to 25C VDS = 24 V, VGS = 0 V VGS = 20 V, VDS = 0 V
Off Characteristics
On Characteristics
VGS(th) VGS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance
ID = 1 mA ID = 250 A
1 1
3 3
V mV/C
ID = 10 mA, Referenced to 25C ID = 250 uA, Referenced to 25C VGS = 10 V, ID = 8.2 A VGS = 10 V, ID = 8.2 A, TJ = 125C VGS = 4.5 V, ID = 7.6 A ID = 6.9 A VGS = 10 V, VGS = 10 V, ID = 6.9 A, TJ = 125C VGS = 4.5 V, ID = 6.2 A VGS = 10 V, VDS = 5 V VDS = 5 V, VDS = 5 V, VDS = 15 V, f = 1.0 MHz ID = 8.2 A ID = 6.9 A VGS = 0 V,
Q1
22 36 28 27 38 34
ID(on) gFS
Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1
A S
Dynamic Characteristics
Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance pF pF pF 4.9 3.8
Switching Characteristics
td(on) tr td(off) tf td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
(Note 2)
Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1
10 9 5 4 26 23 3 3 11 10 15 9 16 14 6 4
19 18 10 8 42 32 6 6 20 19 27 18 29 25 12 8
ns ns ns ns ns ns ns ns
FDS6900AS
Electrical Characteristics
Symbol Parameter
(continued)
Test Conditions
(Note 2)
Switching Characteristics
Qg(TOT) Qg Qgs Qgd
Total Gate Charge at Vgs=10V Total Gate Charge at Vgs=5V GateSource Charge GateDrain Charge
Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1
(Note 3) (Note 2) (Note 2) (Note 2)
15 15 8.2 8.5
nC nC nC nC
(Note 3)
Q2 Q2 Q1
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a)
b)
c)
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3. See SyncFET Schottky body diode characteristics below. 4. FDS6900AS_NL is a lead free product. The FDS6900AS_NL marking will appear on the reel label.
FDS6900AS
Typical Characteristics: Q2
30
VGS = 10V 4.0V 3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
2.4 VGS = 3.0V 2.2 2 1.8 1.6 1.4 1.2 1 0.8 3.5V 4.0V 4.5V 5.0V 6.0V 10V
6.0V
4.5V
20
3.0V
10
2.5V
25
30
ID = 4A
RDS(ON), ON-RESISTANCE (OHM) 0.05
1.4
1.2
0.04
0.03
TA = 125 C
0.8
0.02
TA = 25oC
VDS = 5V
25 ID, DRAIN CURRENT (A)
20
TA = 125 C
15
TA = 125 C
10
0.1
25oC
-55 C
0.01
-55oC
25 C
0 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4
0.001 0 0.2 0.4 0.6 0.8 VSD, BODY DIODE FORWARD VOLTAGE (V) 1
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS6900AS
Typical Characteristics: Q2
800 f = 1MHz VGS = 0 V CAPACITANCE (pF) VDS = 10V 20V 600 Ciss 400
6
15V
Coss 200
2
Crss
100s
40
30
10s
20
0.1
10
0 0.001
0.01
0.1
10
100
1000
1
D = 0.5 0.2
0.1
0.01
0.001 0.0001
0.001
0.01
0.1
t1, TIME (sec)
10
100
1000
FDS6900AS
Typical Characteristics Q1
20 VGS = 10V 16 ID, DRAIN CURRENT (A) 6.0V 12 4.5V 4.0V 3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
2.2 VGS = 3.0V 2 1.8 1.6 3.5V 1.4 4.0V 1.2 1 0.8 0 0.4 0.8 1.2 1.6 VDS, DRAIN TO SOURCE VOLTAGE (V) 2 0 4 8 12 ID, DRAIN CURRENT (A) 16 20 4.5V 5.0V 6.0V 10V
3.0V
4 2.5V 0
Figure 13. On-Resistance Variation with Drain Current and Gate Voltage.
0.07
ID = 3.5A
RDS(ON), ON-RESISTANCE (OHM) 0.06
1.4
1.2
0.05
0.04
TA = 125 C
0.8
0.03
TA = 25 C
TA = 125 C 25 C -55 C
o o
12
0.1
TA = 125oC
-55oC
0.01
0.001
0.0001 0 0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2
Figure 17. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS6900AS
Typical Characteristics Q1
800
f = 1 MHz VGS = 0 V
8
CAPACITANCE (pF)
VDS = 10V 20V
600
Ciss
6
15V
400
Coss
200
2
Crss
40
30
20
0.1
10
0 0.001
0.01
0.1
10
100
1000
1
D = 0.5 0.2
RJA(t) = r(t) * RJA RJA = 135 C/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2
SINGLE PULSE
o
0.1
0.01
0.001 0.0001
0.001
0.01
0.1
t1, TIME (sec)
10
100
1000
FDS6900AS
0.001
100oC
0.0001
Current: 1.6A/DIV
0.00001
25oC
Time: 10nS/DIV
Figure 25. SyncFET body diode reverse leakage versus drain-source voltage and temperature
Current: 1.6A/DIV
Time: 10nS/DIV
FDS6900AS
Typical Characteristics
+
10V
50k 10F 1F
VGS
Ig(REF Charge, (nC) Figure 28. Gate Charge Test Circuit Figure 29. Gate Charge Waveform tON td(ON) VDS + DUT VDD
0V 10% 90% 50% 10% 50% 10% 90%
RL
tr
tOFF td(OFF tf )
90%
VGS
0V
Pulse Width
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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DISCLAIMER
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SuperSOT-8 SyncFET TinyLogic TINYOPTO TruTranslation UHC UltraFET UniFET VCX Wire
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Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I16