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OCET 2011

Question Booklet Series : A

Roll No. In Figures

Sr. No. :

Important : Please consult your Admit Card / Roll No. Slip before filling your Roll Number on the Test Booklet and Answer Sheet.

In Words

O.M.R. Answer Sheet Serial No.

Signature of the Candidate :

Subject : M. Tech. (Microelectronics)

Time : 90 minutes Number of Questions : 75 Maximum Marks : 75 DO NOT OPEN THE SEAL ON THE BOOKLET UNTIL ASKED TO DO SO INSTRUCTIONS 1. Write your Roll No. on the Question Booklet and also on the OMR Answer Sheet in the space provided and nowhere else. 2. Enter the Subject and series code of Question Booklet on the OMR Answer Sheet. Darken the corresponding bubbles with Black Ball Point / Black Gel pen. 3. Do not make any identification mark on the Answer Sheet or Question Booklet. 4. To open the Question Booklet remove the paper seal (s) gently when asked to do so. 5. Please check that this Question Booklet contains 75 questions. In case of any discrepancy, inform the Assistant Superintendent within 10 minutes of the start of test. 6. Each question has four alternative answers (A, B, C, D) of which only one is correct. For each question, darken only one bubble (A or B or C or D), whichever you think is the correct answer, on the Answer Sheet with Black Ball Point / Black Gel pen. 7. If you do not want to answer a question, leave all the bubbles corresponding to that question blank in the Answer Sheet. No marks will be deducted in such cases. 8. Darken the bubbles in the OMR Answer Sheet according to the Serial No. of the questions given in the Question Booklet. 9. Negative marking will be adopted for evaluation i.e., 1/4th of the marks of the question will be deducted for each wrong answer. A wrong answer means incorrect answer or wrong filling of bubble. 10. For calculations, use of simple log tables is permitted. Borrowing of log tables and any other material is not allowed. 11. For rough work only the sheets marked Rough Work at the end of the Question Booklet be used. 12. The Answer Sheet is designed for computer evaluation. Therefore, if you do not follow the instructions given on the Answer Sheet, it may make evaluation by the computer difficult. Any resultant loss to the candidate on the above account, i.e., not following the instructions completely, shall be of the candidate only. 13. After the test, hand over the Question Booklet and the Answer Sheet to the Assistant Superintendent on duty. 14. In no case the Answer Sheet, the Question Booklet, or its part or any material copied/ noted from this Booklet is to be taken out of the examination hall. Any candidate found doing so would be expelled from the examination. 15. A candidate who creates disturbance of any kind or changes his/her seat or is found in possession of any paper possibly of any assistance or found giving or receiving assistance or found using any other unfair means during the examination will be expelled from the examination by the Centre Superintendent / Observer whose decision shall be final. 16. Telecommunication equipment such as pager, cellular phone, wireless, scanner, etc., is not permitted inside the examination hall. Use of calculators is not allowed.

M. Tech. (Microelectronics)/A
1. In a MOS Structure, capacitance in depletion region is : (A) (C) 2. (A) (C) 3. (A) (B) (C) (D) 4. (A) (C) 5. (A) (B) (C) (D) 6. More than that in inversion region More than that in accumulation region + for NMOS and for PMOS Same for NMOS and PMOS (B) Same as in inversion region (D) Lesser than that in inversion region (B) for NMOS and + for PMOS

Threshold voltage of a MOSFET is : (D) Not a function of substrate concentration

GCA refers to : Fast variation of electrical field in MOS Channel Slow variation of electrical field in MOS Channel Process in short channel MOSFETs Short Channel Effect HfO2 Ta2O5 Holes are lighter than electrons Holes are heavier than electrons Holes are positively charged and electrons are negatively charged None of the above (B) Al2O3

High k dielectrics are : (D) All of the above

Mobility of holes is lesser than that of electrons because :

Doping density in n-type semiconductor is 1016 cm3. The best option for this semiconductor is : (A) (C) Holes are equal to 1016 cm3 Electrons are approximately 104 cm3 Saturation region Same everwhere Reduces subthreshold leakage Has no effect on subthreshold leakage MOSFET Model Short Channel Effect (B) Holes are approximately 104 cm3 (D) Holes and electrons are equal (B) Linear region


Maximum drain current in a MOSFET is in : (A) (C) (D) Cutoff region (B) Increases subthreshold leakage


DIBL in a MOSFET : (A) (C) (D) Reduces power dissipation (B) BJT Model


EKV is : (A) (C) (D) Long Channel Effect

M. Tech. (Microelectronics)/OEC-22972

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10. Switching speed of a MOSFET is : (A) (B) (C) (D) (A) (C) Ratio of transconductance and gate input capacitance Ratio of output resistance and drain voltage Ratio of gate voltage with drain voltage Ratio of drain voltage with threshold voltage Very close to conduction band In mid of bandgap (B) Close to valence band

11. Heavily doped n-type semiconductor has fermi level : (D) Between intrinsic fermi level and the valence band (B) 25V

12. Thermal voltage at room temperature is : (A) (C) (A) (C) 25 mV 0V Depletion Charge Density Threshold Voltage (D) 1000V (B) Inversion Charge Density

13. In a MOSFET, Weak, Moderate and Strong are the terms associated with : (D) MOSFET Dimensions

14. As per the Quantum Mechanical Theory, the inversion charge density peaks in the MOSFET : (A) (C) (A) (C) At the substrate/oxide interface Oxide region Oxide thickness Gate to source voltage (B) Some distance away from the substrate/ oxide interface in the substrate (D) Polygate region (B) Oxide/substrate barrier height

15. Gate oxide tunneling depends on : (D) All of the above

16. Drain saturation voltage primarily depends on : (A) (B) (C) (D) Drain voltage Drain current Difference between gate to source voltage and threshold voltage None of the above

17. Strained silicon technology works on the principle of : (A) Stretching of the crystal lattice (B) Conversion from crystalline to amorphous (C) Exposing the lattice with light (D) Radiation hardening

M. Tech. (Microelectronics)/OEC-22972

18. Uniaxial strain results from : (A) (B) (C) (D) (A) (B) (C) (D) (A) (B) (C) (D) (A) (C) (A) (C) Application of External Stress through nitride cap layers over the poly gate Deposition of strained silicon layers by doping germanium in the substrate Applying drain voltage Applying gate voltage Low frequency capacitance is higher than high frequency capacitance Low frequency capacitance is lower than high frequency capacitance MOS Capacitance is frequency independent None of the above Raises threshold voltage Reduces threshold voltage Has no relation with threshold voltage Both reduces and increases the threshold voltage Data is lost during read cycle only (B) Data is lost during write cycle only

19. In a MOS Structure :

20. Negative bulk to source voltage in an NMOS :

21. A DRAM Cell requires refresh cycle because : Data is lost during both read and write cycle(D) Of some variation in supply voltage MOSFET parameters BJT parameters (B) MOSFET models

22. SP, MM9 XSIM are : (D) Steps of MOSFET fabrication processes Coloumb scattering

23. Mobility in the MOSFET decreases due to : (A) Phonon scattering (B) (C) (A) Surface roughness scattering

(D) All of the above Surface mobility is more than bulk mobility (D) None of the above Lithography techniques

24. In a MOSFET, surface mobility and bulk mobility differ as : Surface mobility is lesser than bulk mobility (B)

(C) Surface mobility is same as bulk mobility 25. MBE and CVD are : (A) (C) (A) (C) Epitaxy techniques Design tools Oxidation Both etching and oxidation


(D) Etching processes (B) Etching

26. Wet and dry are associated with the following IC processes : (D) Lithography
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M. Tech. (Microelectronics)/OEC-22972

27. MOEMS is : (A) (C) Micro-opto-electromechanical systems Micro-ortho-electromechanical systems (B) Mini-ortho-electromechanical systems (D) Medical-opto-electromechanical systems (B) e beam

28. Which of the following is not a lithographic source ? (A) (C) (A) (C) (A) (C) (A) (C) (A) (C) (A) (C) (A) (C) (A) (C) (A) (C) (A) (C) UV Ion beam Etchant Polygate material Oxidation process Epitaxy process Increasing width Increasing gate to source voltage Flicker Johnson Silicon substrates Metals A SPICE model A testing equipment Lower than 109 torr Between 103 torr to 105 torr Ficks law Hooks law Numerical Analytical (D) RBS (B) Organic resist (D) Dielectric (B) Crystal growth process

29. HF is a :

30. CZ process is : (D) Metallization process (B) Increasing mobility

31. Drain current can be increased by : (D) All of the above (B) White

32. Which of the following noise is dominant in semiconductor devices at lower frequencies ? (D) None of the above (B) Developer solutions

33. Negative and positive are classes of which materials ? (D) Resist (B) A packaging material

34. Latch up is : (D) Mainly caused due to ionizing radiation (B) Between 105 torr to 107 torr (D) Between 101 torr to 103 torr (B) Ohms law

35. UHV is of the order of :

36. Diffusion obeys : (D) Maxwell law (B) Empirical (D) All of the above

37. MOSFET models are :

M. Tech. (Microelectronics)/OEC-22972

38. An FRAM storage capacitor contain main component as : (A) (C) (A) (C) (A) (C) (A) (C) (A) (C) (A) (C) (A) (B) (C) (D) (A) (C) (A) (C) (A) (C) Fe SiO2 AFM measurements TEM measurements Increases at lower and higher frequencies Same at all frequencies Interface trapped charge Fixed oxide charge Electron beam imaging Ion imaging Wire bonding Flipchip (B) PZT (D) Si (B) SEM measurements

39. Spreading resistances occur in : (D) Four probe measurements (B) Decreases at lower and higher frequencies

40. Gain of a transistor varies with frequencies as :

(D) None of the above (B) Oxide trapped charge

41. Which one of the following is an oxide charge ? (D) All of the above (B) X-ray imaging

42. SEM is based on : (D) None of the above (B) TAB

43. Which of the following is not a die attachment technique ? (D) SIMS

44. A package is used to : Protect the die from moisture, chemicals and heat As a transmission medium for power lines As a transmission medium for signal lines All of the above Two NMOS transistors One NMOS and one PMOS transistor Supply voltage Output load capacitance Lesser than input voltage More than input voltage (B) Three PMOS transistors

45. A CMOS inverter has : (D) Two PMOS transistors (B) Input clock frequency (D) All of the above (B) Same as input voltage

46. Dynamic power dissipation in a CMOS inverter depends on :

47. An NMOS pass transistor produces output voltage when logic 1 is at input : (D) None of the above

M. Tech. (Microelectronics)/OEC-22972

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48. 2 input CMOS NAND gate has : (A) (C) (A) (C) (A) (B) (C) (D) (A) (C) (A) (B) (C) (D) (A) (C) (A) (C) (A) (C) 2 NMOS and 2 PMOS 4 NMOS Field programmable gate arrays Flat programmed gate arrays (B) 1 NMOS and 1 PMOS (D) 4 PMOS (B) Future programmed gate arrays

49. FPGA is : (D) None of the above

50. Biaxial strain in a MOSFET is caused due to : Applying external stress through nitride cap layer Depositing strained silicon layer by doping germanium in silicon By applying gate voltage None of the above Presence of mobile atom in the crystal cell (B) Presence of static atom in the crystal cell Stretching of nucleus and the electron Carrier scattering in the substrate Breakdown of gate oxides Boron penetration from the poly to the oxide and the substrate Straining the lattice MINIMOS CADDET Thermal voltage Intrinsic carrier concentration Reduces if poly gate depletion is high Reduces if poly gate doping is high (B) GEMINI (D) Ionizing of atoms

51. Spontaneous Polarization is caused due to :

52. Poly-depletion is caused due to :

53. Which of the following is not a device simulator ? (D) PROMIS (B) Substrate concentration

54. Bulk potential in a MOSFET substrate is a function of : (D) All of the above (B) Raises if poly gate depletion is high

55. Gate oxide tunneling : (D) None of the above

56. Which of the following is true for current sense amplifiers (CSA) and voltage sense amplifier (VSA) ? (A) (C) (A) (C) VSA is faster than CSA VSA and CSA have same speed Work function of the polygate Work function of the substrate (B) VSA is slower than CSA (D) These are not used in memories (B) Interface trapped charge density

57. Flatband voltage is influenced by : (D) All of the above


M. Tech. (Microelectronics)/OEC-22972

58. Which is not a low k dielectric ? (A) (C) Hydrogen Silsequixones Fluorinated silicon on glass films (B) Methyl Silsequixones (D) Aluminium oxide

59. The high energy radiation causes in a MOSFET : (A) (C) Increase of subthreshold leakage No effect on any MOS parameter (B) Increase of ON current

(D) Increase in carrier mobility

60. DRC and LVS are the terms associated with : (A) (C) Testing techniques Layout design (B) Front end design

(D) Modeling techniques

61. Semiconductor thickness can be measured by : (A) (C) SEM Interference technique (B) TEM


62. GTO is a : (A) (C) (A) (C) (A) (C) (A) (C) (A) (C) (A) (C) Analytical instrument Short channel effect Gives results of devices under test IC design steps SPICE Model Oxidation model Silicon and Germanium Germanium Invented by Leo Esaki (B) MOSFET model (D) Power electronic device (B) IC Fabrication plots

63. Shmoo plot : (D) IC modeling plots (B) Mathematical model of a semiconductor (D) Etching model (B) Silicon

64. Kronig and Penney model describe the :

65. HBT and Strained Si MOS devices have : (D) Aluminium (B) Operates in reverse bias

66. Which of the following is false about tunnel diode ? Uses quantum mechanical tunneling principle(D) Mainly used for microwave applications Generate low power Operate at microwave frequencies (B) Generate high level of phase noise

67. The main disadvantage of IMPATT diode is : (D) Generate high power

M. Tech. (Microelectronics)/OEC-22972

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68. GaAs is used for high frequency applications because : (A) (B) (C) (D) (A) (C) (A) (C) (A) (C) (A) (C) (A) (C) (A) (C) (A) (C) Its oxide is easy to form Electron mobility is higher as compared to silicon Electron mobility is lower as compared to silicon It is not a semiconductor Drift of carriers Drift and diffusion of carriers Zero Four times the fermi potential Analytical Instruments Layout rules Quantum mechanical tunneling Diffusion It is used to regulate voltage Use tunneling principle Active and saturation Active, cutoff, inverse and saturation Has wide bandgap Has high electron mobility (B) Diffusion of carriers

69. Subthreshold leakage current is mainly due to : (D) None of the above (B) Equal the fermi potential

70. During inversion condition in a MOSFET, the surface potential is : (D) Double the fermi potential (B) IC fabrication steps

71. XRD, SEM, TEM are : (D) None of the above (B) Drift (D) Breakdown (B) Operate in reverse bias (D) All of the above (B) Active, cutoff and saturation

72. Flash memories are based on :

73. Which of the following is true for Zener diodes ?

74. A BJT can operate in : (D) Active and cutoff (B) Is used in LEDs

75. Gallium Nitride : (D) All of the above

M. Tech. (Microelectronics)/OEC-22972



M. Tech. (Microelectronics)/OEC-22972


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M. Tech. (Microelectronics)/OEC-22972