Power Transistors

2SD1275, 2SD1275A
Silicon NPN triple diffusion planar type darlington
4.20.2

Unit: mm
0.70.1
10.00.2 5.50.2 4.20.2 2.70.2

For power amplification Complementary to 2SB0949 and 2SB0949A

High forward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw
16.70.3

7.50.2

Features

3.10.1

Solder Dip (4.0)

14.00.5

Absolute Maximum Ratings Ta = 25C

Parameter Collector-base voltage (Emitter open) 2SD1275 2SD1275A VCEO VEBO IC ICP TC = 25C PC Tj Tstg Symbol VCBO Rating 60 80 60 80 5 2 4 35 2.0 150 55 to +150 C C V A A W V Unit V

1.40.1

1.30.2 0.5+0.2 0.1

0.80.1

2.540.3 5.080.5

Collector-emitter voltage 2SD1275 (Base open) 2SD1275A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature

1 2 3

1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package

Internal Connection
C B

Electrical Characteristics Ta = 25C 3C

Parameter Collector-emitter voltage (Base open) Base-emitter voltage Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) 2SD1275 2SD1275A 2SD1275 2SD1275A IEBO hFE1 hFE2 * Collector-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time VCE(sat) fT ton tstg tf ICEO 2SD1275 2SD1275A VBE ICBO VCE = 4 V, IC = 2 A VCB = 60 V, IE = 0 VCB = 80 V, IE = 0 VCE = 30 V, IB = 0 VCE = 40 V, IB = 0 VEB = 5 V, IC = 0 VCE = 4 V, IC = 1 A VCE = 4 V, IC = 2 A IC = 2 A, IB = 8 mA VCE = 10 V, IC = 0.5 A, f = 1 MHz IC = 2 A, IB1 = 8 mA, IB2 = 8 mA, VCC = 50 V 20 0.5 4.0 1.0 1 000 1 000 Symbol VCEO Conditions IC = 30 mA, IB = 0 Min 60 80 Typ

Max

Unit V

2.8 1 1 2 2 2

V mA

mA

Emitter-base cutoff current (Collector open) Forward current transfer ratio

mA

10 000 2.5 V MHz s s s

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE2 R 1 000 to 2 500 Q P

2 000 to 5 000 4 000 to 10 000

Publication date: February 2003

SJD00189BED

2SD1275, 2SD1275A
PC Ta
50

IC VCE
5
10
TC=25C

IC VBE
VCE=4V

Collector power dissipation PC (W)

40
(1)

Collector current IC (A)

Collector current IC (A)

(1)TC=Ta (2)With a 1001002mm Al heat sink (3)With a 50502mm Al heat sink (4)Without heat sink (PC=2W)

4
IB=2.0mA 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA 0.4mA 0.2mA

8
25C TC=100C 25C

30

20

10

(2) (3) (4)

40

80

120

160

0.8

1.6

2.4

3.2

Ambient temperature Ta (C)

Collector-emitter voltage VCE (V)

Base-emitter voltage VBE (V)

VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100
IC/IB=250

hFE IC
VCE=4V

Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
104
IE=0 f=1MHz TC=25C

105

Forward current transfer ratio hFE

10
25C

104
TC=100C

103

TC=25C 100C

103

25C 25C

102

0.1

102

10

0.01 0.01

0.1

10

10 0.01

0.1

10

1 0.1

10

100

Collector current IC (A)

Collector current IC (A)

Collector-base voltage VCB (V)

Safe operation area

100
Non repetitive pulse TC=25C

Rth t
103
(1)Without heat sink (2)With a 1001002mm Al heat sink

Thermal resistance Rth (C/W)

102

(1)

Collector current IC (A)

10
ICP IC t=10ms t=1ms DC

10

(2)

0.1
2SD1275A 2SD1275

101

0.01

10

100

1 000

102 104

103

102

101

10

102

103

104

Collector-emitter voltage VCE (V)

Time t (s)

SJD00189BED

Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.

2002 JUL

This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.