LTC5585

1
5585f
TYPICAL APPLICATION
FEATURES DESCRIPTION
Wideband IQ Demodulator
with IIP2 and DC Offset
Control
The LTC

5585 is a direct conversion quadrature demodu-

lator optimized for high linearity receiver applications in
the 700MHz to 3GHz frequency range. It is also usable in
the 400MHz to 700MHz and 3GHz to 4GHz ranges with
reduced performance. It is suitable for communications
receivers where an RF signal is directly converted into I
and Q baseband signals with bandwidth of 530MHz or
higher. The LTC5585 incorporates balanced I and Q mix-
ers, LO buffer amplifiers and a precision, high frequency
quadrature phase shifter. The integrated on-chip broadband
transformer provides a single-ended interface at the RF
input with simple off-chip L-C matching. In addition, the
LTC5585 provides four analog control voltage interface
pins for IIP2 and DC offset correction, greatly simplifying
system calibration.
The high linearity of the LTC5585 provides excellent spur-
free dynamic range for the receiver. This direct conversion
demodulator can eliminate the need for intermediate fre-
quency (IF) signal processing, as well as the corresponding
requirements for image filtering and IF filtering. These
I/Q outputs can interface directly to channel-select filters
(LPFs) or to baseband amplifiers.
Direct Conversion Receiver with IIP2 and DC Offset Calibration
APPLICATIONS
n
700MHz to 3GHz Operating Frequency
n
High IIP3: 28.7dBm at 700MHz, 25.7dBm at 1.95GHz
n
High IIP2: 70dBm at 700MHz, 60dBm at 1.95GHz
n
User Adjustable IIP2 Up to 80dBm
n
User Adjustable DC Offset Null
n
High Input P1dB: 16dBm at 1950MHz
n
I/Q Bandwidth of 530MHz or Higher
n
Image Rejection: 43dB at 1950MHz
n
Noise Figure: 13.5dB at 700MHz
12.7dB at 1.95GHz
n
Conversion Gain: 2.0dB at 700MHz
2.4dB at 1.95GHz
n
Single-Ended RF with On-Chip Transformer
n
Shutdown Mode
n
Operating Temperature Range (T
C
): 40C to 105C
n
24-Lead 4mm 4mm QFN Package
n
LTE/W-CDMA/TD-SCDMA Base Station Receivers
n
Wideband DPD Receivers
n
Point-To-Point Broadband Radios
n
High Linearity Direct Conversion I/Q Receivers
n
Image Rejection Receivers
L, LT, LTC, LTM, Linear Technology and the Linear logo are registered trademarks of Linear
Technology Corporation. All other trademarks are the property of their respective owners.
A/D
D/A
D/A
VGA
VGA
5585 TA01a
LPF
RF
BPF LNA BPF
RF
INPUT
LO
EN
LO INPUT
ENABLE
LPF
IP2 ADJUST
DC OFFSET
I
+
I

Q
+
Q

0
90
IP2 AND DC
OFFSET CAL
LTC5585
V
CC
5V
IP2 ADJUST
DC OFFSET
IP2 AND DC
OFFSET CAL
D/A
D/A
A/D
IIP2 vs IP2I, IP2Q Trim Voltage
IP2I, IP2Q (V)
0
I
I
P
2

(
d
B
m
)
80
90
100
0.8 0.9
5585 G09
70
60
40
0.2 0.4 0.6 0.1 1.0 0.3 0.5 0.7
50
120
f
RF
= 700MHz
110
I, 40C
I, 25C
I, 85C
I, 105C
Q, 40C
Q, 25C
Q, 85C
Q, 105C
LTC5585
2
5585f
PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS
V
CC
Supply Voltage ................................... 0.3V to 5.5V
V
CAP
Voltage ................................................. V
CC
0.05V
I

, I
+
, Q
+
, Q

, CMI, CMQ Voltage ........2.5V to V

CC
+ 0.3V
Voltage on Any Other Pin .................0.3V to V
CC
+ 0.3V
LO
+
, LO

, RF Input Power ....................................20dBm

RF Input DC Voltage ............................................... 0.1V
Maximum Junction Temperature (T
JMAX
) ............. 150C
Operating Temperature Range (T
C
) ........ 40C to 105C
Storage Temperature Range .................. 65C to 150C
(Note 1)
24 23 22 21 20 19
7 8 9
TOP VIEW
25
GND
UF PACKAGE
24-LEAD (4mm 4mm) PLASTIC QFN
10 11 12
6
5
4
3
2
1
13
14
15
16
17
18 IP2Q
DCOQ
DCOI
IP2I
RF
GND
CMQ
V
CAP
LO

LO
+
GND
GND
R
E
F
I
+
I

Q
+
Q

C
M
I
E
N
G
N
D
V
B
I
A
S
V
C
C
E
D
C
E
I
P
2

T
JMAX
= 150C,
JC
= 7C/W
EXPOSED PAD (PIN 25) IS GND, MUST BE SOLDERED TO PCB
ELECTRICAL CHARACTERISTICS T
C
= 25C, V
CC
= 5V, EN = 5V, EDC = EIP2 = 0V, REF = IP2I = IP2Q = DCOI = DCOQ
= 0.5V, P
RF
= 5dBm (5dBm/tone for 2-tone IIP2 and IIP3 tests), P
LO
= 6dBm, unless otherwise noted. (Notes 2, 3, 5, 6, 9)
ORDER INFORMATION
LEAD FREE FINISH TAPE AND REEL PART MARKING PACKAGE DESCRIPTION TEMPERATURE RANGE
LTC5585IUF#PBF LTC5585IUF#TRPBF 5585 24-Lead (4mm x 4mm) Plastic QFN 40C to 105C
Consult LTC Marketing for parts specified with wider operating temperature ranges.
Consult LTC Marketing for information on non-standard lead based finish parts.
For more information on lead free part marking, go to: http://www.linear.com/leadfree/
For more information on tape and reel specifications, go to: http://www.linear.com/tapeandreel/
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
f
RF(RANGE)
RF Input Frequency Range (Note 12) 0.4 to 4.0 GHz
f
LO(RANGE)
LO Input Frequency Range (Note 12) 0.4 to 4.0 GHz
P
LO(RANGE)
LO Input Power Range (Note 12) 0 to 10 dBm
f
RF1
= 700MHz, f
RF2
= 701MHz, f
LO
= 690MHz, L6 = 2.7pF, C19 = 1.0pF, L5 = 12nH, C14 = 5.6pF
f
RF(MATCH)
RF Input Frequency Range Return Loss > 10dB 680 to 870 MHz
f
LO(MATCH)
LO Input Frequency Range Return Loss > 10dB 690 to 820 MHz
G
V
Voltage Conversion Gain Loaded with 100 Pull-Up (Note 8) 2.0 dB
NF Noise Figure Double-Side Band (Note 4) 13.5 dB
NF
BLOCKING
Noise Figure Under Blocking Conditions Double-Side Band, P
RF
= 0dBm (Note 7) 15.5 dB
IIP3 Input 3rd Order Intercept 28.7 dBm
IIP2 Input 2nd Order Intercept Unadjusted, EIP2 = 0V 70 dBm
IIP2
OPT
Optimized Input 2nd Order Intercept EIP2 = 5V, IP2I, IP2Q Adjusted for Minimum IM2 80 dBm
P1dB Input 1dB Compression 16 dBm
DC
OFFSET
DC Offset at I/Q Outputs Unadjusted, EDC = 0V (Note 13) 4 mV
G I/Q Gain Mismatch 0.05 dB
I/Q Phase Mismatch 0.3 Deg
LTC5585
3
5585f
ELECTRICAL CHARACTERISTICS T
C
= 25C, V
CC
= 5V, EN = 5V, EDC = EIP2 = 0V, REF = IP2I = IP2Q = DCOI = DCOQ
= 0.5V, P
RF
= 5dBm (5dBm/tone for 2-tone IIP2 and IIP3 tests), P
LO
= 6dBm, unless otherwise noted. (Notes 2, 3, 5, 6, 9)
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
IRR Image Rejection Ratio (Note 10) 45 dB
LO-RF LO to RF Leakage 64 dBm
RF-LO RF to LO Isolation 60 dB
f
RF1
= 1950MHz, f
RF2
= 1951MHz, f
LO
= 1940MHz, L6 = 4.7nH, C19 = 0.5pF, L5 = 0.8pF, C13 = 5.1nH
f
RF(MATCH)
RF Input Frequency Range Return Loss > 10dB 1.6 to 2.1 GHz
f
LO(MATCH)
LO Input Frequency Range Return Loss > 10dB 1.85 to 2.05 GHz
G
V
Voltage Conversion Gain Loaded with 100 Pull-Up (Note 8) 2.4 dB
NF Noise Figure Double-Side Band (Note 4) 12.7 dB
IIP3 Input 3rd Order Intercept 25.7 dBm
IIP2 Input 2nd Order Intercept Unadjusted, EIP2 = 0V 60 dBm
IIP2
OPT
Optimized Input 2nd Order Intercept EIP2 = 5V, IP2I, IP2Q Adjusted for Minimum IM2 80 dBm
P1dB Input 1dB Compression 16 dBm
DC
OFFSET
DC Offset at I/Q Outputs Unadjusted, EDC = 0V (Note 13) 7 mV
G I/Q Gain Mismatch 0.05 dB
I/Q Phase Mismatch 0.7 Deg
IRR Image Rejection Ratio (Note 10) 43 dB
LO-RF LO to RF Leakage 49 dBm
RF-LO RF to LO Isolation 58 dB
f
RF1
= 2150MHz, f
RF2
= 2151MHz, f
LO
= 2140MHz, C17 = 1.5pF, L6 = 4.7nH, C19 = 0.5pF, L5 = 5.1nH, C14 = 0.7pF
f
RF(MATCH)
RF Input Frequency Range Return Loss > 10dB 2.03 to 2.36 GHz
f
LO(MATCH)
LO Input Frequency Range Return Loss > 10dB 2.05 to 2.18 GHz
G
V
Voltage Conversion Gain Loaded with 100 Pull-Up (Note 8) 2.3 dB
NF Noise Figure Double-Side Band (Note 4) 13.0 dB
NF
BLOCKING
Noise Figure Under Blocking Conditions Double-Side Band, P
RF
= 0dBm (Note 7) 14.6 dB
IIP3 Input 3rd Order Intercept 25.9 dBm
IIP2 Input 2nd Order Intercept Unadjusted, EIP2 = 0V 56 dBm
IIP2
OPT
Optimized Input 2nd Order Intercept EIP2 = 5V, IP2I, IP2Q Adjusted for Minimum IM2 80 dBm
P1dB Input 1dB Compression 15 dBm
DC
OFFSET
DC Offset at I/Q Outputs Unadjusted, EDC = 0V (Note 13) 6 mV
G I/Q Gain Mismatch 0.05 dB
I/Q Phase Mismatch 1.0 Deg
IRR Image Rejection Ratio (Note 10) 40 dB
LO-RF LO to RF Leakage 50 dBm
RF-LO RF to LO Isolation 60 dB
f
RF1
= 2600MHz, f
RF2
= 2601MHz, f
LO
= 2590MHz, C17 = 0.5pF, L6 = 2.7nH, L5 = 1.2nH, C14 = 1pF
f
RF(MATCH)
RF Input Frequency Range Return Loss > 10dB 2.35 to 3.1 GHz
f
LO(MATCH)
LO Input Frequency Range Return Loss > 10dB 2.47 to 2.65 GHz
G
V
Voltage Conversion Gain Loaded with 100 Pull-Up (Note 8) 2.3 dB
NF Noise Figure Double-Side Band (Note 4) 13.6 dB
NF
BLOCKING
Noise Figure Under Blocking Conditions Double-Side Band, P
RF
= 0dBm (Note 7) 15.2 dB
IIP3 Input 3rd Order Intercept 27.5 dBm
IIP2 Input 2nd Order Intercept Unadjusted, EIP2 = 0V 60 dBm
IIP2
OPT
Minimum Input 2nd Order Intercept EIP2 = 5V, IP2I, IP2Q Adjusted for Minimum IM2 80 dBm
P1dB Input 1dB Compression 15.5 dBm
DC
OFFSET
DC Offset at I/Q Outputs Unadjusted, EDC = 0V (Note 13) 8 mV
LTC5585
4
5585f
ELECTRICAL CHARACTERISTICS T
C
= 25C, V
CC
= 5V, EN = 5V, EDC = EIP2 = 0V, REF = IP2I = IP2Q = DCOI = DCOQ
= 0.5V, P
RF
= 5dBm (5dBm/tone for 2-tone IIP2 and IIP3 tests), P
LO
= 6dBm, unless otherwise noted. (Notes 2, 3, 5, 6, 9)
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
G I/Q Gain Mismatch 0.05 dB
I/Q Phase Mismatch 1.0 Deg
IRR Image Rejection Ratio (Note 10) 40 dB
LO-RF LO to RF Leakage 46 dBm
RF-LO RF to LO Isolation 55 dB
Power Supply and Other Parameters
V
CC
Supply Voltage 4.75 5.0 5.25 V
I
CC
Supply Current 180 200 220 mA
I
CC(LOW)
Supply Current EDC = EIP2 = 0V 170 190 210 mA
I
CC(OFF)
Shutdown Current EN < 0.3V 11 900 A
t
ON
Turn-On Time EN Transition from Logic Low to High (Note 14) 0.2 s
t
OFF
Turn-Off Time EN Transition from Logic High to Low (Note 15) 0.8 s
V
EH
EN, EDC, EIP2 Input High Voltage (On) 2.0 V
V
EL
EN, EDC, EIP2 Input Low Voltage (Off) 0.3 V
I
ENH
EN Pin Input Current EN = 5.0V 52 A
I
EDCH
EDC Pin Input Current EDC = 5.0V 33 A
I
EIP2H
EIP2 Pin Input Current EIP2 = 5.0V 50 A
V
REF
REF Pin Voltage With REF Pin Unloaded 0.5 V
V
REF(RANGE)
REF Pin Voltage Range When Driven with External Source 0.4 to 0.7 V
Z
REF
REF Input Impedance (Note 11) 2||1 k||pF
DCOI, DCOQ, IP2I, IP2Q Pin Voltage Unloaded 0.5 V
DCOI, DCOQ, IP2I, IP2Q Voltage Range When Driven with External Source 0 to 2V
REF
V
DCOI, DCOQ, IP2I, IP2Q Impedance (Note 11) 8||1 k||pF
DCOI, DCOQ, IP2I, IP2Q Settling Time For Step Input, Output with 90% of Final Value 20 ns
DC Offset Adjustment Range DCOI, DCOQ Swept from 0V to 1V, EDC = 5V 20 mV
DC Offset Drift Over Temperature Unadjusted, EDC = 0V 20 V/C
V
CM
I
+
, I

, Q
+
, Q

Common Mode Voltage V

CC
1.5 V
Z
OUT
I
+
, I

, Q
+
, Q

Output Impedance Single Ended 100||6 ||pF

BW
BB
I
+
, I

, Q
+
, Q

Output Bandwidth 100 External Pull-Up, 3dB Corner Frequency 530 MHz
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: Tests are performed with the test circuit of Figure 1.
Note 3: The LTC5585 is guaranteed to be functional over the 40C to
105C case temperature operating range.
Note 4: DSB noise figure is measured at the baseband frequency of 15MHz
with a small-signal noise source without any filtering on the RF input and
no other RF signal applied.
Note 5: Performance at the RF frequencies listed is measured with external
RF and LO impedance matching, as shown in the table of Figure 1.
Note 6: The complementary outputs (I
+
, I

and Q
+
, Q

) are combined
using a 180 phase-shift combiner.
Note 7: Noise figure under blocking conditions (NF
BLOCKING
) is measured
at an output frequency of 60MHz with RF input signal at f
LO
+ 1MHz. Both
RF and LO input signals are appropriately filtered, as well as the baseband
output. NF
BLOCKING
measured at 840MHz, 2140MHz and 2500MHz only.
Note 8: Voltage conversion gain is calculated from the average measured
power conversion gain of the I and Q outputs using the test circuit shown
in Figure 1. Power conversion gain is measured with a 100 differential
load impedance on the I and Q outputs.
Note 9: Baseband outputs have a 100 external pull-up resistor to V
CC
as
shown in the test circuit shown in Figure 1.
Note 10: Image rejection is calculated from the measured gain error and
phase error using the method listed in the appendix.
Note 11: The DCOI, DCOQ, IP2I, IP2Q pins have an 8k internal resistor to
ground. The REF pin has a 2k internal resistor to ground. If unconnected,
these pins will float up to 500mV through internal current sources. A low
output resistance voltage source is recommended for driving these pins.
LTC5585
5
5585f
DC PERFORMANCE CHARACTERISTICS
TYPICAL PERFORMANCE CHARACTERISTICS
IIP3, P1dB vs Temperature (T
C
) IIP3, P1dB vs Supply Voltage (V
CC
) IIP3 vs LO Power
Supply Current vs Supply Voltage REF Voltage vs Temperature
ELECTRICAL CHARACTERISTICS
Note 12: This is the recommended operating range, operation outside the
listed range is possible with degraded performance to some parameters.
Note 13: DC offset measured differentially between I
+
and I

and between
Q
+
and Q

. The reported value is the mean of the absolute values of the

characterization data distribution.
Note 14: Baseband amplitude is within 10% of final value.
Note 15: Baseband amplitude is at least 30dB down from its on state.
EN = 5V, EDC = 0V and EIP2 = 0V. Test circuit shown in Figure 1
700MHz application. V
CC
= 5V, EN = 5V, EDC = 0V,
EIP2 = 0V, REF = 0.5V, T
C
= 25C, P
LO
= 6dBm, f
LO
= 690MHz, f
RF1
= 700MHz, f
RF2
= 701MHz, f
BB
= 10MHz, P
RF1
= P
RF2
= 5dBm,
DC Blocks and Mini-Circuits PSCJ-2-1 180 combiner at baseband outputs de-embedded from measurement unless otherwise noted.
Test circuit with RF and LO ports impedance matched as in Figure 1.
SUPPLY VOLTAGE (V)
4.75
160
S
U
P
P
L
Y

C
U
R
R
E
N
T

(
m
A
)
170
190
200
210
260
230
5
5585 G01
180
240
250
220
5.25
T
C
= 40C
T
C
= 25C
T
C
= 85C
T
C
= 105C
TEMPERATURE (C)
40
500
R
E
F

V
O
L
T
A
G
E

(
m
V
)
505
515
520
525
550
535
0 40 60 80
5585 G02
510
540
545
530
20 20 100
V
CC
= 4.75V
V
CC
= 5V
V
CC
= 5.25V
LO FREQUENCY (MHz)
600
10
I
I
P
3
,

P
1
d
B

(
d
B
m
)
14
22
26
30
50
38
700 800
5585 G03
18
42
46
34
900 1000
I, 40C
I, 25C
I, 85C
I, 105C
Q, 40C
Q, 25C
Q, 85C
Q, 105C
IIP3
P1dB
LO FREQUENCY (MHz)
600
10
I
I
P
3
,

I
P
1
d
B

(
d
B
m
)
14
22
26
30
50
T
C
= 25C
38
700 800
5585 G04
18
42
46
34
900 1000
I, 4.75V
I, 5.0V
I, 5.25V
Q, 4.75V
Q, 5.0V
Q, 5.25V
IIP3
P1dB
LO FREQUENCY (MHz)
600
10
I
I
P
3

(
d
B
m
)
14
22
26
30
50
T
C
= 25C
38
700 800
5585 G05
18
42
46
34
900 1000
I, 0dBm
I, 6dBm
I, 10dBm
Q, 0dBm
Q, 6dBm
Q, 10dBm
LTC5585
6
5585f
TYPICAL PERFORMANCE CHARACTERISTICS
IIP2 vs IP2I, IP2Q Trim Voltage IIP2 vs RF Tone Spacing
2x2 Half-IF IIP2
vs RF to LO Tone Spacing
Noise Figure and Conversion
Gain vs LO Power
Noise Figure and Conversion
Gain vs Temperature (T
C
)
2-Tone IIP3 vs RF Power
Uncalibrated IIP2 vs Temperature
(T
C
)
Noise Figure vs RF Power and
IP2I, IP2Q Trim Voltage
Uncalibrated IIP2 vs LO Power
700MHz application. V
CC
= 5V, EN = 5V, EDC = 0V,
EIP2 = 0V, REF = 0.5V, T
C
= 25C, P
LO
= 6dBm, f
LO
= 690MHz, f
RF1
= 700MHz, f
RF2
= 701MHz, f
BB
= 10MHz, P
RF1
= P
RF2
= 5dBm,
DC Blocks and Mini-Circuits PSCJ-2-1 180 combiner at baseband outputs de-embedded from measurement unless otherwise noted.
Test circuit with RF and LO ports impedance matched as in Figure 1.
RF POWER (dBm)
10
I
I
P
3

(
d
B
m
)
38
44
50
48
46
40
42
34
36
28
30
22
24
4 0 2 4
5585 G06
32
26
20
8 6 2
I, 40C
I, 25C
I, 85C
I, 105C
Q, 40C
Q, 25C
Q, 85C
Q, 105C
f
RF1
= 700MHz
f
RF2
= 701MHz
f
LO
= 690MHz
LO FREQUENCY (MHz)
600
I
I
P
2

(
d
B
m
)
90
100
110
900
5585 G07
80
70
700 800 1000
60
50
120
I, 40C
I, 25C
I, 85C
I, 105C
Q, 40C
Q, 25C
Q, 85C
Q, 105C
LO FREQUENCY (MHz)
600
I
I
P
2

(
d
B
m
)
90
100
110
900
5585 G08
80
70
700 800 1000
60
50
120
T
C
= 25C I, 0dBm
I, 6dBm
I, 10dBm
Q, 0dBm
Q, 6dBm
Q, 10dBm
RF TONE SPACING (MHz)
0
I
I
P
2

(
d
B
m
)
70
85
90
400
5585 G10
65
60
40
100 200 300 50 150 250 350
50
100
95
80
75
55
45
I (UNCALIBRATED)
I (NULLED AT 1MHz)
Q (UNCALIBRATED)
Q (NULLED AT 1MHz)
T
C
= 25C
f
RF1
= 700MHz
f
LO
= 690MHz
RF TO LO TONE SPACING (MHz)
0
50
I
I
P
2

(
d
B
m
)
55
65
70
75
100
85
100 200 250
5585 G11
60
90
95
80
50 150 300 350 400
T
C
= 25C
f
LO
= 690MHz
Q
I
LO FREQUENCY (MHz)
600
4
G
A
I
N
,

N
F

(
d
B
)
0
4
8
24
16
700 900
20
12
2
2
6
22
14
18
10
800 1000
5585 G12
I, 40C
I, 25C
I, 85C
I, 105C
Q, 40C
Q, 25C
Q, 85C
Q, 105C
NF
GAIN
LO FREQUENCY (MHz)
600
4
G
A
I
N
,

N
F

(
d
B
)
0
4
8
24
16
700 900
20
12
2
2
6
22
14
18
10
800 1000
5585 G13
I, 0dBm
I, 6dBm
I, 10dBm
Q, 0dBm
Q, 6dBm
Q, 10dBm
T
C
= 25C
NF
GAIN
IP2I, IP2Q TRIM VOLTAGE (V)
0
D
S
B

N
O
I
S
E

F
I
G
U
R
E

(
d
B
)
16
18
20
0.8
5585 G14
14
12
15
17
19
13
11
10
0.2 0.1 0.4 0.3 0.6 0.7 0.9 0.5 1.0
I, 20dBm
I, 0dBm
Q, 20dBm
Q, 0dBm
T
C
= 25C
f
RF
= 890MHz
f
LO
= 900MHz
f
NOISE
= 3.4MHz
EIP2 = 5V
IP2I, IP2Q (V)
0
I
I
P
2

(
d
B
m
)
80
90
100
0.8 0.9
5585 G09
70
60
40
0.2 0.4 0.6 0.1 1.0 0.3 0.5 0.7
50
120
f
RF
= 700MHz
110
I, 40C
I, 25C
I, 85C
I, 105C
Q, 40C
Q, 25C
Q, 85C
Q, 105C
LTC5585
7
5585f
TYPICAL PERFORMANCE CHARACTERISTICS
DC Offset vs LO Power
Noise Figure vs RF Input Power
with f
NOISE
= 60MHz
DC Offset vs DCOI, DCOQ Control
Voltage
Noise Figure vs RF Input Power
with f
NOISE
= 3.4MHz
LO to RF Leakage and RF to LO
Isolation
Image Rejection vs Temperature
(Note 10)
700MHz application. V
CC
= 5V, EN = 5V, EDC = 0V,
EIP2 = 0V, REF = 0.5V, T
C
= 25C, P
LO
= 6dBm, f
LO
= 690MHz, f
RF1
= 700MHz, f
RF2
= 701MHz, f
BB
= 10MHz, P
RF1
= P
RF2
= 5dBm,
DC Blocks and Mini-Circuits PSCJ-2-1 180 combiner at baseband outputs de-embedded from measurement unless otherwise noted.
Test circuit with RF and LO ports impedance matched as in Figure 1.
RF INPUT POWER (dBm)
20
D
S
B

N
O
I
S
E

F
I
G
U
R
E

(
d
B
)
19
22
25
24
23
20
21
17
18
14
15
11
12
5 5 10
5585 G15
16
13
10
15 10 0
PLO = 0dBm
PLO = 6dBm
PLO = 10dBm
T
C
= 25C
f
LO
= 840MHz
f
RF
= 841MHz
f
NOISE
= 60MHz
RF INPUT POWER (dBm)
20
D
S
B

N
O
I
S
E

F
I
G
U
R
E

(
d
B
)
19
22
25
24
23
20
21
17
18
14
15
11
12
5 5 10
5585 G16
16
13
10
15 10 0
PLO = 0dBm
PLO = 6dBm
PLO = 10dBm
T
C
= 25C
f
LO
= 900MHz
f
RF
= 890MHz
f
NOISE
= 3.4MHz
DCOI, DCOQ (V)
0
25
D
C

O
F
F
S
E
T

(
m
V
)
20
10
5
0
25
30
35
40
10
0.2 0.4
5585 G17
15
15
20
5
0.6 1.0 0.8 0.1 0.3 0.5 0.7 0.9
I, 40C
I, 25C
I, 85C
I, 105C
Q, 40C
Q, 25C
Q, 85C
Q, 105C
f
LO
= 700MHz
LO FREQUENCY (MHz)
600
D
C

O
F
F
S
E
T

(
m
V
)
4
7
10
9
8
5
6
2
3
1
0
4
3
750 850 900 950 1000
5585 G18
1
2
5
650 700 800
I, 0dBm
I, 6dBm
I, 10dBm
Q, 0dBm
Q, 6dBm
Q, 10dBm
T
C
= 25C
LO FREQUENCY (MHz)
600
100
L
E
A
K
A
G
E

(
d
B
m
)
,

I
S
O
L
A
T
I
O
N

(
d
B
c
)
90
80
70
30
50
650 700 850 900 950
40
60
95
85
75
35
55
45
65
750 800 1000
5585 G19
L-R, 40C
L-R, 25C
L-R, 85C
L-R, 105C
R-L, 40C
R-L, 25C
R-L, 85C
R-L, 105C
LO FREQUENCY (MHz)
600
I
M
A
G
E

R
E
J
E
C
T
I
O
N

(
d
B
)
60
80
1000
5585 G20
40
20
700 800 900 650 750 850 950
100
50
70
30
90
T
C
= 40C
T
C
= 25C
T
C
= 85C
T
C
= 105C
LTC5585
8
5585f
TYPICAL PERFORMANCE CHARACTERISTICS 1950MHz application. V
CC
= 5V, EN = 5V, EDC = 0V,
REF = 0.5V, EIP2 = 0V, T
C
= 25C, P
LO
= 6dBm, f
LO
= 1940MHz, f
RF1
= 1950MHz, f
RF2
= 1951MHz, f
BB
= 10MHz, P
RF1
= P
RF2
= 5dBm,
DC Blocks and Mini-Circuits PSCJ-2-1 180 combiner at baseband outputs de-embedded from measurement unless otherwise noted.
Test circuit with RF and LO ports impedance matched as in Figure 1.
2-Tone IIP3 vs RF Power
2x2 Half-IF IIP2
vs RF to LO Tone Spacing
Uncalibrated IIP2 vs Temperature
(T
C
) Uncalibrated IIP2 vs LO Power
IIP2 vs IP2I, IP2Q Trim Voltage IIP2 vs RF Tone Spacing
IIP3, P1dB vs Temperature (T
C
) IIP3, P1dB vs Supply Voltage IIP3 vs LO Power
LO FREQUENCY (MHz)
1500
10
I
I
P
3
,

P
1
d
B

(
d
B
m
)
14
22
26
30
50
38
1700 1900 2000 2100
5585 G21
18
42
46
34
1600 1800 2200
I, 40C
I, 25C
I, 85C
I, 105C
Q, 40C
Q, 25C
Q, 85C
Q, 105C
IIP3
P1dB
LO FREQUENCY (MHz)
1500
10
I
I
P
3
,

P
1
d
B

(
d
B
m
)
14
22
26
30
50
38
1700 1900 2000 2100
5585 G22
18
42
46
34
1600 1800 2200
I, 4.75V
I, 5.0V
I, 5.25V
Q, 4.75V
Q, 5.0V
Q, 5.25V
T
C
= 25C
IIP3
P1dB
LO FREQUENCY (MHz)
1500
10
I
I
P
3

(
d
B
m
)
14
22
26
30
50
38
1700 1900 2000 2100
5585 G23
18
42
46
34
1600 1800 2200
I, 0dBm
I, 6dBm
I, 10dBm
Q, 0dBm
Q, 6dBm
Q, 10dBm
T
C
= 25C
RF POWER (dBm)
10
I
I
P
3

(
d
B
m
)
38
44
50
48
46
40
42
34
36
28
30
22
24
4 0 2 4
5585 G24
32
26
20
8 6 2
I, 40C
I, 25C
I, 85C
I, 105C
Q, 40C
Q, 25C
Q, 85C
Q, 105C
f
RF1
= 1950MHz
f
RF2
= 1951MHz
f
LO
= 1940MHz
LO FREQUENCY (MHz)
1500
40
I
I
P
2

(
d
B
m
)
50
70
80
90
1900
130
5585 G25
60
1700 1600 2000 2100 1800 2200
100
110
120
I, 40C
I, 25C
I, 85C
I, 105C
Q, 40C
Q, 25C
Q, 85C
Q, 105C
LO FREQUENCY (MHz)
1500
40
I
I
P
2

(
d
B
m
)
50
70
80
90
1900
130
5585 G26
60
1700 1600 2000 2100 1800 2200
100
110
120
I, 0dBm
I, 6dBm
I, 10dBm
Q, 0dBm
Q, 6dBm
Q, 10dBm
T
C
= 25C
IP2I, IP2Q (V)
0
I
I
P
2

(
d
B
m
)
80
90
100
0.8 0.9
5585 G27
70
60
40
0.2 0.4 0.6 0.1 1.0 0.3 0.5 0.7
50
120
f
RF
= 1950MHz
110
I, 40C
I, 25C
I, 85C
I, 105C
Q, 40C
Q, 25C
Q, 85C
Q, 105C
RF TONE SPACING (MHz)
0
I
I
P
2

(
d
B
m
)
70
85
90
400
5585 G28
65
60
40
100 200 300 50 150 250 350
50
100
95
80
75
55
45
I (UNCALIBRATED)
I (NULLED AT 1MHz)
Q (UNCALIBRATED)
Q (NULLED AT 1MHz)
T
C
= 25C
f
RF1
= 1950MHz
f
LO
= 1940MHz
RF TO LO TONE SPACING (MHz)
0
50
I
I
P
2

(
d
B
m
)
55
65
70
75
100
85
100 200 250
5585 G29
60
90
95
80
50 150 300 350 400
T
C
= 25C
f
LO
= 1940MHz
Q
I
LTC5585
9
5585f
TYPICAL PERFORMANCE CHARACTERISTICS 1950MHz application. V
CC
= 5V, EN = 5V, EDC = 0V,
REF = 0.5V, EIP2 = 0V, T
C
= 25C, P
LO
= 6dBm, f
LO
= 1940MHz, f
RF1
= 1950MHz, f
RF2
= 1951MHz, f
BB
= 10MHz, P
RF1
= P
RF2
= 5dBm,
DC Blocks and Mini-Circuits PSCJ-2-1 180 combiner at baseband outputs de-embedded from measurement unless otherwise noted.
Test circuit with RF and LO ports impedance matched as in Figure 1.
Noise Figure and Conversion
Gain vs Temperature (T
C
)
Noise Figure and Conversion
Gain vs LO Power
DC Offset vs DCOI, DCOQ Control
Voltage
LO to RF Leakage and RF to LO
Isolation DC Offset vs LO Power
Image Rejection vs Temperature
(Note 10)
LO FREQUENCY (MHz)
1500
4
G
A
I
N
,

N
F

(
d
B
)
0
4
8
24
16
1600 1800 1900 2000 2100
20
12
2
2
6
22
14
18
10
1700 2200
5585 G30
I, 40C
I, 25C
I, 85C
I, 105C
Q, 40C
Q, 25C
Q, 85C
Q, 105C
NF
GAIN
LO FREQUENCY (MHz)
1500
4
G
A
I
N
,

N
F

(
d
B
)
0
4
8
24
16
1600 1800 1900 2000 2100
20
12
2
2
6
22
14
18
10
1700 2200
5585 G31
I, 0dBm
I, 6dBm
I, 10dBm
Q, 0dBm
Q, 6dBm
Q, 10dBm
T
C
= 25C
NF
GAIN
DCOI, DCOQ (V)
0
25
D
C

O
F
F
S
E
T

(
m
V
)
20
10
5
0
25
30
35
40
10
0.2 0.4
5585 G32
15
15
20
5
0.6 1.0 0.8 0.1 0.3 0.5 0.7 0.9
I, 40C
I, 25C
I, 85C
I, 105C
Q, 40C
Q, 25C
Q, 85C
Q, 105C
f
LO
= 1950MHz
LO FREQUENCY (MHz)
1500
D
C

O
F
F
S
E
T

(
m
V
)
9
12
15
14
13
10
11
7
8
4
5
1
2
1800 2000 2200 2100
5585 G33
6
3
0
1600 1700 1900
I, 0dBm
I, 6dBm
I, 10dBm
Q, 0dBm
Q, 6dBm
Q, 10dBm
T
C
= 25C
LO FREQUENCY (MHz)
1500
90
L
E
A
K
A
G
E

(
d
B
m
)
,

I
S
O
L
A
T
I
O
N

(
d
B
c
)
80
70
60
20
40
1600 1700 2000 2100
30
50
85
75
65
25
45
35
55
1800 1900 2200
5585 G34
L-R, 40C
L-R, 25C
L-R, 85C
L-R, 105C
R-L, 40C
R-L, 25C
R-L, 85C
R-L, 105C
LO FREQUENCY (MHz)
1500
I
M
A
G
E

R
E
J
E
C
T
I
O
N

(
d
B
)
60
80
2200
5585 G35
40
20
1700 1900 2100 1600 1800 2000
100
50
70
30
90
T
C
= 40C
T
C
= 25C
T
C
= 85C
T
C
= 105C
Conversion Gain Distribution IIP3 Distribution, I Side IIP3 Distribution, Q Side
CONVERSION GAIN (dB)
2 2.2
P
E
R
C
E
N
T
A
G
E

D
I
S
T
R
I
B
U
T
I
O
N

(
%
)
20
30
5585 G36
10
0
2.4 2.6 2.8 3.0 3.2
50
40
T
C
= 40C
T
C
= 25C
T
C
= 85C
T
C
= 105C
IIP3 (dBm)
20
P
E
R
C
E
N
T
A
G
E

D
I
S
T
R
I
B
U
T
I
O
N

(
%
)
60
80
100
28
5585 G37
40
20
50
70
90
30
10
0
22 24 26 30 32
T
C
= 40C
T
C
= 25C
T
C
= 85C
T
C
= 105C
IIP3 (dBm)
20
P
E
R
C
E
N
T
A
G
E

D
I
S
T
R
I
B
U
T
I
O
N

(
%
)
60
80
100
28
5585 G38
40
20
50
70
90
30
10
0
22 24 26 30 32
T
C
= 40C
T
C
= 25C
T
C
= 85C
T
C
= 105C
LTC5585
10
5585f
TYPICAL PERFORMANCE CHARACTERISTICS 1950MHz application. V
CC
= 5V, EN = 5V, EDC = 0V,
REF = 0.5V, EIP2 = 0V, T
C
= 25C, P
LO
= 6dBm, f
LO
= 1940MHz, f
RF1
= 1950MHz, f
RF2
= 1951MHz, f
BB
= 10MHz, P
RF1
= P
RF2
= 5dBm,
DC Blocks and Mini-Circuits PSCJ-2-1 180 combiner at baseband outputs de-embedded from measurement unless otherwise noted.
Test circuit with RF and LO ports impedance matched as in Figure 1.
Phase Error Distribution
Image Rejection Distribution
(Note 10)
DSB Noise Figure Distribution,
I Side
DSB Noise Figure Distribution,
Q Side IIP2 Distribution, I Side
IIP2 Distribution, Q Side Gain Error Distribution
DSB NOISE FIGURE (dB)
11
P
E
R
C
E
N
T
A
G
E

D
I
S
T
R
I
B
U
T
I
O
N

(
%
)
60
80
100
15
5585 G39
40
20
50
70
90
30
10
0
12 13 14 16 17
T
C
= 40C
T
C
= 25C
T
C
= 85C
T
C
= 105C
DSB NOISE FIGURE (dB)
11
P
E
R
C
E
N
T
A
G
E

D
I
S
T
R
I
B
U
T
I
O
N

(
%
)
60
80
100
15
5585 G40
40
20
50
70
90
30
10
0
12 13 14 16 17
T
C
= 40C
T
C
= 25C
T
C
= 85C
T
C
= 105C
IIP2 (dBm)
70
P
E
R
C
E
N
T
A
G
E

D
I
S
T
R
I
B
U
T
I
O
N

(
%
)
60
80
100
90
5585 G41
40
20
50
70
90
30
10
0
75 80 85 95 100
T
C
= 40C
T
C
= 25C
T
C
= 85C
T
C
= 105C
IIP2 (dBm)
70
P
E
R
C
E
N
T
A
G
E

D
I
S
T
R
I
B
U
T
I
O
N

(
%
)
60
80
100
90
5585 G42
40
20
50
70
90
30
10
0
75 80 85 95 100
T
C
= 40C
T
C
= 25C
T
C
= 85C
T
C
= 105C
GAIN ERROR (dB)
0.1
0
P
E
R
C
E
N
T
A
G
E

D
I
S
T
R
I
B
U
T
I
O
N

(
%
)
10
30
40
50
70
5585 G43
20
60
0.02 0.1 0.06 0.02 0.06
T
C
= 40C
T
C
= 25C
T
C
= 85C
T
C
= 105C
PHASE ERROR (DEGREES)
1
0
P
E
R
C
E
N
T
A
G
E

D
I
S
T
R
I
B
U
T
I
O
N

(
%
)
20
30
5585 G44
10
0.6 0 0.8 0.4 0.2
T
C
= 40C
T
C
= 25C
T
C
= 85C
T
C
= 105C
IMAGE REJECTION (dBc)
40
0
P
E
R
C
E
N
T
A
G
E

D
I
S
T
R
I
B
U
T
I
O
N

(
%
)
10
30
40
50
45 50 52.5 60
5585 G45
20
42.5 47.5 55 57.5
T
C
= 40C
T
C
= 25C
T
C
= 85C
T
C
= 105C
LTC5585
11
5585f
TYPICAL PERFORMANCE CHARACTERISTICS 2150MHz application. V
CC
= 5V, EN = 5V,
EDC = 0V, EIP2 = 0V, REF = 0.5V, T
C
= 25C, P
LO
= 6dBm, f
LO
= 2140MHz, f
RF1
= 2150MHz, f
RF2
= 2151MHz, f
BB
= 10MHz,
P
RF1
= P
RF2
= 5dBm, DC Blocks and Mini-Circuits PSCJ-2-1 180 combiner at baseband outputs de-embedded from measurement
unless otherwise noted. Test circuit with RF and LO ports impedance matched as in Figure 1.
IIP3, P1dB vs Temperature (T
C
)
IIP3, P1dB vs Supply Voltage
(V
CC
) IIP3 vs LO Power
LO FREQUENCY (MHz)
1750
10
I
I
P
3
,

P
1
d
B

(
d
B
m
)
14
22
26
30
50
38
1950 2150 2250
5585 G46
18
42
46
34
1850 2050 2350 2450 2550
I, 40C
I, 25C
I, 85C
I, 105C
Q, 40C
Q, 25C
Q, 85C
Q, 105C
IIP3
P1dB
LO FREQUENCY (MHz)
1750
10
I
I
P
3
,

P
1
d
B

(
d
B
m
)
14
22
26
30
50
38
1950 2150 2250
5585 G47
18
42
46
34
1850 2050 2350 2450 2550
I, 4.75V
I, 5.0V
I, 5.25V
Q, 4.75V
Q, 5.0V
Q, 5.25V
T
C
= 25C
IIP3
P1dB
LO FREQUENCY (MHz)
1750
10
I
I
P
3

(
d
B
m
)
14
22
26
30
50
38
1950 2150 2250
5585 G48
18
42
46
34
1850 2050 2350 2450 2550
I, 0dBm
I, 6dBm
I, 10dBm
Q, 0dBm
Q, 6dBm
Q, 10dBm
T
C
= 25C
2-Tone IIP3 vs RF Power
Uncalibrated IIP2 vs Temperature
(T
C
) Uncalibrated IIP2 vs LO Power
RF POWER (dBm)
10
I
I
P
3

(
d
B
m
)
38
44
50
48
46
40
42
34
36
28
30
22
24
4 0 2 4
5585 G49
32
26
20
8 6 2
I, 40C
I, 25C
I, 85C
I, 105C
Q, 40C
Q, 25C
Q, 85C
Q, 105C
f
RF1
= 2150MHz
f
RF2
= 2151MHz
f
LO
= 2140MHz
LO FREQUENCY (MHz)
1750
40
I
I
P
2

(
d
B
m
)
50
70
80
90
2150
130
5585 G50
60
1950 1850 2250 2350 2450 2050 2550
100
110
120
I, 40C
I, 25C
I, 85C
I, 105C
Q, 40C
Q, 25C
Q, 85C
Q, 105C
LO FREQUENCY (MHz)
1750
40
I
I
P
2

(
d
B
m
)
50
70
80
90
2150
130
5585 G51
60
1950 1850 2250 2350 2450 2050 2550
100
110
120
I, 0dBm
I, 6dBm
I, 10dBm
Q, 0dBm
Q, 6dBm
Q, 10dBm
T
C
= 25C
IIP2 vs IP2I, IP2Q Trim Voltage IIP2 vs RF Tone Spacing
2x2 Half-IF IIP2
vs RF to LO Tone Spacing
IP2I, IP2Q (V)
0
I
I
P
2

(
d
B
m
)
80
90
100
0.8 0.9
5585 G52
70
60
40
0.2 0.4 0.6 0.1 1.0 0.3 0.5 0.7
50
120
f
RF
= 2150MHz
110
I, 40C
I, 25C
I, 85C
I, 105C
Q, 40C
Q, 25C
Q, 85C
Q, 105C
RF TONE SPACING (MHz)
0
I
I
P
2

(
d
B
m
)
70
85
90
400
5585 G53
65
60
40
100 200 300 50 150 250 350
50
100
95
80
75
55
45
I (UNCALIBRATED)
I (NULLED AT 1MHz)
Q (UNCALIBRATED)
Q (NULLED AT 1MHz)
T
C
= 25C
f
RF1
= 2150MHz
f
LO
= 2140MHz
RF TO LO TONE SPACING (MHz)
0
50
I
I
P
2

(
d
B
m
)
55
65
70
75
100
85
100 200 250
5585 G54
60
90
95
80
50 150 300 350 400
T
C
= 25C
f
LO
= 2140MHz
Q
I
LTC5585
12
5585f
TYPICAL PERFORMANCE CHARACTERISTICS 2150MHz application. V
CC
= 5V, EN = 5V,
EDC = 0V, EIP2 = 0V, REF = 0.5V, T
C
= 25C, P
LO
= 6dBm, f
LO
= 2140MHz, f
RF1
= 2150MHz, f
RF2
= 2151MHz, f
BB
= 10MHz,
P
RF1
= P
RF2
= 5dBm, DC Blocks and Mini-Circuits PSCJ-2-1 180 combiner at baseband outputs de-embedded from measurement
unless otherwise noted. Test circuit with RF and LO ports impedance matched as in Figure 1.
DC Offset vs DCOI, DCOQ Control
Voltage DC Offset vs LO Power
LO to RF Leakage and RF to LO
Isolation
Image Rejection vs Temperature
(Note 10)
Noise Figure vs RF Input Power
Noise Figure and Conversion
Gain vs Temperature (T
C
)
Noise Figure and Conversion
Gain vs LO Power
RF INPUT POWER (dBm)
20
D
S
B

N
O
I
S
E

F
I
G
U
R
E

(
d
B
)
19
22
25
24
23
20
21
17
18
14
15
11
12
5 5 10
5585 G55
16
13
10
15 10 0
PLO = 0dBm
PLO = 6dBm
PLO = 10dBm
T
C
= 25C
f
LO
= 2140MHz
f
RF
= 2141MHz
f
NOISE
= 60MHz
LO FREQUENCY (MHz)
1750 1850 1950 2050 2150 2250 2350 2450 2550
4
G
A
I
N
,

N
F

(
d
B
)
0
4
8
24
16
20
12
2
2
6
22
14
18
10
5585 G56
I, 40C
I, 25C
I, 85C
I, 105C
Q, 40C
Q, 25C
Q, 85C
Q, 105C
NF
GAIN
LO FREQUENCY (MHz)
1750 1850
4
G
A
I
N
,

N
F

(
d
B
)
0
4
8
24
16
1950 2050 2150 2250 2350 2450 2550
20
12
2
2
6
22
14
18
10
5585 G57
I, 0dBm
I, 6dBm
I, 10dBm
Q, 0dBm
Q, 6dBm
Q, 10dBm
T
C
= 25C
NF
GAIN
DCOI, DCOQ (V)
0
25
D
C

O
F
F
S
E
T

(
m
V
)
20
10
5
0
25
30
35
40
10
0.2 0.4
5585 G58
15
15
20
5
0.6 1.0 0.8 0.1 0.3 0.5 0.7 0.9
I, 40C
I, 25C
I, 85C
I, 105C
Q, 40C
Q, 25C
Q, 85C
Q, 105C
f
LO
= 2150MHz
LO FREQUENCY (MHz)
1750
5
D
C

O
F
F
S
E
T

(
m
V
)
3
1
3
5
15
9
1950 2150 2250
5585 G59
1
11
13
7
1850 2050 2350 2450 2550
I, 0dBm
I, 6dBm
I, 10dBm
Q, 0dBm
Q, 6dBm
Q, 10dBm
T
C
= 25C
LO FREQUENCY (MHz)
1750
90
L
E
A
K
A
G
E

(
d
B
m
)
,

I
S
O
L
A
T
I
O
N

(
d
B
c
)
80
70
60
20
40
1850 1950 2250 2350 2450
30
50
85
75
65
25
45
35
55
2050 2150 2550
5585 G60
L-R, 40C
L-R, 25C
L-R, 85C
L-R, 105C
R-L, 40C
R-L, 25C
R-L, 85C
R-L, 105C
LO FREQUENCY (MHz)
1750
I
M
A
G
E

R
E
J
E
C
T
I
O
N

(
d
B
)
60
80
2550
5585 G61
40
20
1950 2150 2350 1850 2050 2250 2450
100
50
70
30
90
T
C
= 40C
T
C
= 25C
T
C
= 85C
T
C
= 105C
LTC5585
13
5585f
TYPICAL PERFORMANCE CHARACTERISTICS 2600MHz application. V
CC
= 5V, EN = 5V, EDC = 0V,
EIP2 = 0V, REF = 0.5V, T
C
= 25C, P
LO
= 6dBm, f
LO
= 2590MHz, f
RF1
= 2600MHz, f
RF2
= 2601MHz, f
BB
= 10MHz, P
RF1
= P
RF2
= 5dBm,
DC Blocks and Mini-Circuits PSCJ-2-1 180 combiner at baseband outputs de-embedded from measurement unless otherwise noted.
Test circuit with RF and LO ports impedance matched as in Figure 1.
2-Tone IIP3 vs RF Power Uncalibrated IIP2 vs LO Power
Uncalibrated IIP2 vs Temperature
(T
C
)
IIP2 vs IP2I, IP2Q Trim Voltage IIP2 vs RF Tone Spacing
2x2 Half-IF IIP2 vs RF to LO Tone
Spacing
IIP3, P1dB vs Temperature (T
C
) IIP3, P1dB vs Supply Voltage (V
CC
) IIP3 vs LO Power
LO FREQUENCY (MHz)
2200
10
I
I
P
3
,

P
1
d
B

(
d
B
m
)
14
22
26
30
50
38
2400 2600 2700
5585 G62
18
42
46
34
2300 2500 2800 2900 3000
I, 40C
I, 25C
I, 85C
I, 105C
Q, 40C
Q, 25C
Q, 85C
Q, 105C
IIP3
P1dB
LO FREQUENCY (MHz)
2200
10
I
I
P
3
,

P
1
d
B

(
d
B
m
)
14
22
26
30
50
38
2400 2600 2700
5585 G63
18
42
46
34
2300 2500 2800 2900 3000
I, 4.75V
I, 5.0V
I, 5.25V
Q, 4.75V
Q, 5.0V
Q, 5.25V
T
C
= 25C
IIP3
P1dB
LO FREQUENCY (MHz)
2200
10
I
I
P
3

(
d
B
m
)
14
22
26
30
50
38
2400 2600 2700
5585 G64
18
42
46
34
2300 2500 2800 2900 3000
I, 0dBm
I, 6dBm
I, 10dBm
Q, 0dBm
Q, 6dBm
Q, 10dBm
T
C
= 25C
RF POWER (dBm)
10
I
I
P
3

(
d
B
m
)
38
44
50
48
46
40
42
34
36
28
30
22
24
4 0 2 4
5585 G65
32
26
20
8 6 2
I, 40C
I, 25C
I, 85C
I, 105C
Q, 40C
Q, 25C
Q, 85C
Q, 105C
f
RF1
= 2600MHz
f
RF2
= 2601MHz
f
LO
= 2590MHz
LO FREQUENCY (MHz)
2200
40
I
I
P
2

(
d
B
m
)
50
70
80
90
130
100
2400 2600 2700
5585 G66
60
110
120
2300 2500 2800 2900 3000
I, 40C
I, 25C
I, 85C
I, 105C
Q, 40C
Q, 25C
Q, 85C
Q, 105C
LO FREQUENCY (MHz)
2200
40
I
I
P
2

(
d
B
m
)
50
70
80
90
130
100
2400 2600 2700
5585 G66
60
110
120
2300 2500 2800 2900 3000
I, 0dBm
I, 6dBm
I, 10dBm
Q, 0dBm
Q, 6dBm
Q, 10dBm
T
C
= 25C
IP2I, IP2Q (V)
0
I
I
P
2

(
d
B
m
)
80
90
100
0.8 0.9
5585 G68
70
60
40
0.2 0.4 0.6 0.1 1.0 0.3 0.5 0.7
50
120
f
RF
= 2600MHz
110
I, 40C
I, 25C
I, 85C
I, 105C
Q, 40C
Q, 25C
Q, 85C
Q, 105C
RF TONE SPACING (MHz)
0
I
I
P
2

(
d
B
m
)
70
85
90
400
5585 G69
65
60
40
100 200 300 50 150 250 350
50
100
95
80
75
55
45
I (UNCALIBRATED)
I (NULLED AT 1MHz)
Q (UNCALIBRATED)
Q (NULLED AT 1MHz)
T
C
= 25C
f
RF1
= 2600MHz
f
LO
= 2590MHz
RF TO LO TONE SPACING (MHz)
0
50
I
I
P
2

(
d
B
m
)
55
65
70
75
100
85
100 200 250
5585 G70
60
90
95
80
50 150 300 350 400
T
C
= 25C
f
LO
= 2590MHz
Q
I
LTC5585
14
5585f
Noise Figure vs RF Power and
IP2I, IP2Q Trim Voltage
DC Offset vs DCOI, DCOQ Control
Voltage DC Offset vs LO Power
LO to RF Leakage and RF to LO
Isolation
Image Rejection vs Temperature
(Note 10)
Noise Figure and Conversion
Gain vs LO Power
Noise Figure vs RF Input Power
Noise Figure and Conversion
Gain vs Temperature (T
C
)
TYPICAL PERFORMANCE CHARACTERISTICS 2600MHz application. V
CC
= 5V, EN = 5V, EDC = 0V,
EIP2 = 0V, REF = 0.5V, T
C
= 25C, P
LO
= 6dBm, f
LO
= 2590MHz, f
RF1
= 2600MHz, f
RF2
= 2601MHz, f
BB
= 10MHz, P
RF1
= P
RF2
= 5dBm,
DC Blocks and Mini-Circuits PSCJ-2-1 180 combiner at baseband outputs de-embedded from measurement unless otherwise noted.
Test circuit with RF and LO ports impedance matched as in Figure 1.
LO FREQUENCY (MHz)
2200 2300 2400 2500 2600 2700 2800 2900 3000
4
G
A
I
N
,

N
F

(
d
B
)
0
4
8
24
16
20
12
2
2
6
22
14
18
10
5585 G71
I, 40C
I, 25C
I, 85C
I, 105C
Q, 40C
Q, 25C
Q, 85C
Q, 105C
NF
GAIN
LO FREQUENCY (MHz)
2200 2300 2400 2500 2600 2700 2800 2900 3000
4
G
A
I
N
,

N
F

(
d
B
)
0
4
8
24
16
20
12
2
2
6
22
14
18
10
5585 G72
I, 0dBm
I, 6dBm
I, 10dBm
Q, 0dBm
Q, 6dBm
Q, 10dBm
T
C
= 25C
NF
GAIN
IP2I, IP2Q TRIM VOLTAGE (V)
0
D
S
B

N
O
I
S
E

F
I
G
U
R
E

(
d
B
)
16
18
20
0.8
5585 G73
14
12
15
17
19
13
11
10
0.2 0.1 0.4 0.3 0.6 0.7 0.9 0.5 1.0
I, 20dBm
I, 0dBm
Q, 20dBm
Q, 0dBm
T
C
= 25C
f
RF
= 2501MHz
f
LO
= 2500MHz
f
NOISE
= 60MHz
EIP2 = 5V
RF INPUT POWER (dBm)
20
D
S
B

N
O
I
S
E

F
I
G
U
R
E

(
d
B
)
19
22
25
24
23
20
21
17
18
14
15
11
12
5 5 10
5585 G74
16
13
10
15 10 0
PLO = 0dBm
PLO = 6dBm
PLO = 10dBm
T
C
= 25C
f
LO
= 2500MHz
f
RF
= 2501MHz
f
NOISE
= 60MHz
DCOI, DCOQ (V)
0
25
D
C

O
F
F
S
E
T

(
m
V
)
20
10
5
0
25
30
35
40
10
0.2 0.4
5585 G75
15
15
20
5
0.6 1.0 0.8 0.1 0.3 0.5 0.7 0.9
I, 40C
I, 25C
I, 85C
I, 105C
Q, 40C
Q, 25C
Q, 85C
Q, 105C
f
LO
= 2600MHz
LO FREQUENCY (MHz)
2200
5
D
C

O
F
F
S
E
T

(
m
V
)
3
1
3
5
15
9
2400 2600
5585 G76
1
11
13
7
2800 3000
T
C
= 25C I, 0dBm
I, 6dBm
I, 10dBm
Q, 0dBm
Q, 6dBm
Q, 10dBm
LO FREQUENCY (MHz)
2200
80
L
E
A
K
A
G
E

(
d
B
m
)
,

I
S
O
L
A
T
I
O
N

(
d
B
c
)
70
60
50
10
30
2300 2400 2700 2800 2900
20
40
75
65
55
15
35
25
45
2500 2600 3000
5585 G77
L-R, 40C
L-R, 25C
L-R, 85C
L-R, 105C
R-L, 40C
R-L, 25C
R-L, 85C
R-L, 105C
LO FREQUENCY (MHz)
2200
I
M
A
G
E

R
E
J
E
C
T
I
O
N

(
d
B
)
60
80
3000
5585 G78
40
20
2400 2600 2800 2300 2500 2700 2900
100
50
70
30
90
T
C
= 40C
T
C
= 25C
T
C
= 85C
T
C
= 105C
LTC5585
15
5585f
PIN FUNCTIONS
IP2Q, IP2I (Pin 1, Pin 4): IIP2 Adjustment Analog Control
Voltage Input for Q and I Channel. A decoupling capacitor
is recommended on this pin. A low output resistance volt-
age source is recommended for driving these pins. These
pins should be left floating if unused.
DCOQ, DCOI (Pin 2, Pin 3): DC Offset Analog Control
Voltage Input for Q and I Channel. A decoupling capaci-
tor is recommended on this pin. A low output resistance
voltage source is recommended for driving these pins.
These pins should be left floating if unused.
RF (Pin 5): RF Input. External matching is used to obtain
good return loss across the RF input frequency range.
The RF pin is internally shorted to ground through internal
transformer windings. The RF pin should be DC-blocked
with a 1000pF coupling capacitor.
GND (Pins 6, 8, 13, 14, Exposed Pad Pin 25): Ground.
These pins must be soldered to the RF ground plane on
the circuit board. The backside exposed pad ground con-
nection should have a low inductance connection and
good thermal contact to the printed circuit board ground
plane using many through-hole vias. See Figures 2 and 3.
EN (Pin 7): Enable Pin. When the voltage on the EN pin
is a logic high, the chip is completely turned on; the chip
is completely turned off for a logic low. An internal 200k
pull-down resistor ensures the chip remains disabled if
there is no connection to the pin (open-circuit condition).
V
BIAS
(Pin 9): This pin can be pulled to ground through
a resistor to lower the current consumption of the chip.
See Applications Information.
V
CC
(Pin 10): Positive Supply Pin. This pin should be
bypassed with shunt 1000pF and 1F capacitors.
EDC (Pin 11): DC Offset Adjustment Mode Enable Pin.
When the voltage on the EDC pin is a logic high, the DC
offset control circuitry is enabled. The circuitry is disabled
for a logic low. An internal 200k pull-down resistor ensures
the circuitry remains disabled if there is no connection to
the pin (open-circuit condition).
EIP2 (Pin 12): IP2 Offset Adjustment Mode Enable Pin.
When the voltage on the EIP2 pin is a logic high, the IP2
adjustment circuitry is enabled. The circuitry is disabled
for a logic low. An internal 200k pull-down resistor ensures
the circuitry remains disabled if there is no connection to
the pin (open-circuit condition).
LO
+
,LO

(Pin 15, Pin 16): LO Inputs. External matching

is required to obtain good return loss across the LO input
frequency range. Can be driven single ended or differen-
tially with an external transformer. The LO pins should be
DC-blocked with a 1000pF coupling capacitor.
V
CAP
, CMQ, CMI (Pin 17, Pin 18, Pin 19): Common Mode
Bypass Capacitor Pins. It is recommended that CMI and
CMQ be connected to V
CAP
through 0.1F capacitors.
Nothing else should be connected to V
CAP
since it is con-
nected to V
CC
inside the chip.
I
+
, I

, Q
+
, Q

(Pin 23, Pin 22, Pin 21, Pin 20): Differential

Baseband Output Pins for the I Channel and Q Channel.
The DC bias point is V
CC
1.5V for each pin. These pins
must have an external 100 or an inductor pull-up to V
CC
.
REF (Pin 24): Voltage Reference Input for Analog Control
Voltage Pins. A decoupling capacitor is recommended
on this pin. A low output resistance voltage source is
recommended for driving this pin. This pin should be left
floating if unused.
LTC5585
16
5585f
BLOCK DIAGRAM
RF
GND
0
90
BIAS
IP2 AND DC
OFFSET CAL
V
CC
V
CAP
CMI
I
+
I

IP2 AND DC
OFFSET CAL
23
19
22
5
Q
+
Q

CMQ
20
21
18
EDC
EIP2
REF
12
11
24
DCOI
3
IP2I
4
IP2Q
1
DCOQ
2
6
LO
+
15
LO

16
EN
GND
7
GND GND
5585 BD
EXPOSED
PAD
V
BIAS
9
25 8 13 14
10 17
LTC5585
17
5585f
TEST CIRCUIT
FREQUENCY RANGE
RF MATCH LO MATCH
C17 L6 C19 C13 L5 C14
700MHz 2.7pF 1.0pF 12nH 5.6pF
1950MHz 4.7nH 0.5pF 5.1nH 0.8pF
2150MHz 0.5pF 4.7nH 5.1nH 0.7pF
2600MHz 0.5pF 2.7nH 1.2nH 1pF
REF DES VALUE SIZE VENDOR REF DES VALUE SIZE VENDOR
C10, C11, C31-C35 0.1F 0402 Murata L5, L6 See Table 0402 Murata
C12, C15, C18, C36, C37 1000pF 0402 Murata R9, R11, R13, R14 100 0402 Vishay
C13, C14, C17, C19 See Table 0402 Murata T1 4:1 0805 Anaren
BD0826J50200A00
C16, C21, C22, C29, C30 1F 0402 Murata
Figure 1. Test Circuit Schematic
24 23 22 21 20 19
7
C35
8 9 10 11 12
6
5
4
3
2
1
13
25
14
15
16
17
18
C11
IP2Q
DCOQ
DCOI
IP2I
RF
GND
IP2Q
DCOQ
DCOI
IP2I
CMQ
V
CAP
LO

LO
+
GND
GND
GND
R
E
F
I
+
I

Q
+
Q

C
M
I
E
N
G
N
D
V
B
I
A
S
V
C
C
E
D
C
E
I
P
2
LTC5585IUF
C36
3
T1
2
4
1
6
5
C12
C37
C10
C31
C21
R11
C22 C30
C13 C14
LO
EIP2
EDC
C16
5585 F01
V
CC
4.75V TO 5.25V
C15
C19
L6
C17
C18
C34 C33
C29
C32
RF
I
+
OUT
I

OUT
Q

OUT
Q
+
OUT
EN
REF
RF
GND
0.015"
0.015"
0.062"
NELCO N4000-13
DC
GND
L5
R13 R9 R14
LTC5585
18
5585f
APPLICATIONS INFORMATION
TEST CIRCUIT
The LTC5585 is an IQ demodulator designed for high
dynamic range receiver applications. It consists of RF
transconductance amplifiers, I/Q mixers, quadrature LO
amplifiers, IIP2 and DC offset correction circuitry, and
bias circuitry.
Operation
As shown in the Block Diagram for the LTC5585, the RF
signal is applied to the inputs of the RF transconductor
V-to-I converters and is then demodulated into I/Q
baseband signals using quadrature LO signals which are
internally generated by a precision 90 phase shifter. The
demodulated I/Q signals are lowpass filtered on-chip with
a 3dB bandwidth of 530MHz. The differential outputs of
the I-channel and Q-channel are well matched in amplitude
and their phases are 90 apart.
Figure 2. Component Side of Evaluation Board Figure 3. Bottom Side of Evaluation Board
RF Input Port
Figure 4 shows the demodulators RF input which consists
of an integrated transformer and high linearity transcon-
ductance amplifiers (V-I converters). The primary side
of the transformer is connected to the RF input pin. The
secondary side of the transformer is connected to the
C19 C17
RF
BIAS
L6
C18
1000pF
RF
INPUT
(MATCHED)
GND
5585 F04
LTC5585
Figure 4: Simplified Schematic of the RF Pin Interface
LTC5585
19
5585f
APPLICATIONS INFORMATION
differential inputs of the transconductance amplifiers.
External DC voltage should not be applied to the RF input
pin. DC current flowing into the primary side of the trans-
former may cause damage to the integrated transformer.
A series DC blocking capacitor should be used to couple
the RF input pin to the RF signal source.
The RF input port can be externally matched over the
operating frequency range with simple L-C matching. An
input return loss better than 10dB can be obtained over a
bandwidth of better than 16% with this method. Figure5
shows the RF input return loss for various matching com-
ponent values. Table 1 shows the impedance and input
reflection coefficient for the RF input without using any
external matching components. The input transmission
line length is de-embedded from the measurement.
Larger bandwidths can be obtained by using multiple L-C
sections. For example Figure 6 shows a 2-section L-C
match having a bandwidth of about 38% where return
loss is >10dB. Figure 7 shows the RF input return loss
for the wide bandwidth match.
Broadband Performance
To get an idea of the broadband performance of the
LTC5585, a 6dB pad can be put on the RF and LO ports,
and the ports can be left unmatched. The measured RF
performance for this configuration is shown in Figures8,
9, 10 and 11 with the 6dB pad de-embedded. The RF
Figure 5. RF Input Return Loss
Figure 7. RF Input Return Loss for Wideband Match
Table 1. RF Input Impedance
FREQUENCY
(MHz) INPUT IMPEDANCE ()
S11
MAG ANGLE ()
400 6.98 + j25.09 0.800 125.98
600 10.43 + j39.74 0.775 101.55
800 16.76 + j56.73 0.751 80.01
1000 28.55 + j77.15 0.727 61.05
1200 51.47 + j101.03 0.706 44.29
1400 96.49 + j122.28 0.686 29.33
1600 171.91 + j112.37 0.667 15.81
1800 229.92 + j30.89 0.648 3.45
2000 202.21 j58.84 0.630 8.00
2200 145.32 j91.23 0.612 18.71
2400 104.82 j91.69 0.594 28.49
2600 78.33 j83.38 0.575 38.22
2800 61.86 j73.64 0.557 47.49
3000 51.27 j64.65 0.538 56.32
3200 43.83 j56.56 0.519 65.15
3400 38.86 j49.72 0.500 73.40
3600 35.17 j43.6 0.481 81.68
3800 32.46 j38.21 0.463 89.79
4000 30.48 j33.41 0.444 97.76
C19
0.5pF
C17
1.2pF
L6
8.2nH
RF
BIAS
C18
1000pF
RF INPUT
1500MHz TO
2200MHz
GND
5585 F06
LTC5585
L7
3.9nH
Figure 6. Wide Bandwidth RF Input Match
FREQUENCY (GHz)
0
30
R
E
T
U
R
N

L
O
S
S

(
d
B
)
25
15
10
5
5
0.5 2.5 3.5
5585 F05
20
0
2 4.5 5 1 1.5 3 4
L6 = 2.7pF, C19 = 1pF
L6 = 4.7nH, C19 = 0.5pF
C17 = 1.5pF, L6 = 4.7nH, C19 = 0.5pF
C17 = 0.5pF, L6 = 2.7nH
T
C
= 25C
FREQUENCY (GHz)
0
20
R
E
T
U
R
N

L
O
S
S

(
d
B
)
15
10
5
0
0.5 1 1.5 2
5585 F07
2.5 3 3.5 4
T
C
= 25C
L7 = 3.9nH, C17 = 1.2pF
L6 = 8.2nH, C19 = 0.5pF
LTC5585
20
5585f
APPLICATIONS INFORMATION
tone spacing is 1MHz, and f
LO
is 10MHz lower than f
RF
.
The conversion gain is lower than under the impedance
matched condition, and correspondingly the P1dB, IIP3,
and NF are higher. As shown, the part can be used at
frequencies outside its specified operating range with
reduced conversion gain and higher NF.
LO Input Port
The demodulators LO input interface is shown in Fig-
ure12. The input consists of a high precision quadrature
phase shifter which generates 0 and 90 phase shifted
LO signals for the LO buffer amplifiers to drive the I/Q
mixers. DC blocking capacitors are required on the LO
+
and LO

inputs.
Figure 8. Broadband IIP3 and IP1dB
Figure 11. Broadband Image Rejection Figure 9. Broadband IIP2
Figure 10. Broadband NF and Gain
The differential LO input impedance and S parameters with
the input transmission lines and balun de-embedded are
listed in Table 2.
Figure 13 shows LO input return loss using the ANAREN
BD0826J50200A00 4:1 balun with various matching
component values.
For optimum IIP2 and large-signal NF performance the LO
inputs should be driven differentially with a 4:1 balun such
as the ANAREN BD0826J50200A00 or BD2425J50200AHF.
As shown in Figure 14, the LO input can also be driven
single-ended from either the LO
+
or LO

input. The unused

port should be DC-blocked and terminated with a 50 load.
Figure 15 compares the uncalibrated IIP2 performance of
single ended versus differential LO drive.
LO FREQUENCY (MHz)
400
10
I
I
P
3
,

P
1
d
B

(
d
B
m
)
14
22
26
30
50
38
1400 2400 2900 3400
5585 F08
18
42
46
34
900 1900 3900
I, 40C
I, 25C
I, 85C
I, 105C
Q, 40C
Q, 25C
Q, 85C
Q, 105C
IIP3
P1dB
LO FREQUENCY (MHz)
400
30
I
I
P
2

(
d
B
m
)
40
60
70
80
130
100
1400 2400 2900 3400
5585 F09
50
110
120
90
900 1900 3900
I, 40C
I, 25C
I, 85C
I, 105C
Q, 40C
Q, 25C
Q, 85C
Q, 105C
LO FREQUENCY (MHz)
4
G
A
I
N
,

N
F

(
d
B
)
0
2
6
8
10
12
14
20
18
16
30
24
1400 2400 2900 3400
5585 F10
2
4
26
28
22
900 1900 3900
I, 40C
I, 25C
I, 85C
I, 105C
Q, 40C
Q, 25C
Q, 85C
Q, 105C
NF
GAIN
LO FREQUENCY (MHz)
500
I
M
A
G
E

R
E
J
E
C
T
I
O
N

(
d
B
)
60
80
4000
5585 F11
40
20
1500 2500 3500 1000 2000 3000
100
50
70
30
90
T
C
= 40C
T
C
= 25C
T
C
= 85C
T
C
= 105C
LTC5585
21
5585f
APPLICATIONS INFORMATION
Figure 12. Simplified Schematic of LO Input Interface with External Matching Components
TO IDENTICAL
Q-CHANNEL
PHASE SHIFTER
LTC5585
V
CC
LO
+
C37
1000pF
LO
INPUT
(MATCHED) C13
C36
1000pF
ANAREN
BD0826J50200A00
LO

GND
5585 F12
C14
L5
Table 2. LO Input Impedance (Differential)
FREQUENCY
(MHz) INPUT IMPEDANCE ()
S11
MAG ANGLE ()
400 118.18 j120.02 0.668 24.89
600 94.18 j99.93 0.623 31.42
800 78.00 j85.06 0.583 38.17
1000 67.21 j73.16 0.544 44.79
1200 59.71 j63.49 0.507 51.25
1400 54.22 j55.46 0.471 57.63
1600 50.06 j48.59 0.437 64.02
1800 46.80 j42.69 0.405 70.49
2000 44.10 j37.42 0.374 77.28
2200 41.86 j32.61 0.345 84.47
2400 39.98 j28.16 0.317 92.21
2600 38.39 j23.98 0.291 100.65
2800 37.05 j20.01 0.267 109.95
3000 35.92 j16.21 0.246 120.29
3200 34.99 j12.53 0.228 131.76
3400 34.22 j8.95 0.214 144.37
3600 33.61 j5.45 0.206 157.88
3800 33.15 j2.0 0.204 171.85
4000 32.82 + j1.4 0.208 174.35
Figure 13. LO Input Return Loss
FREQUENCY (GHz)
0
30
R
E
T
U
R
N

L
O
S
S

(
d
B
)
25
15
10
5
5
0.5 2.5 3.5
5585 F13
20
0
2 4.5 5 1 1.5 3 4
L5 = 12nH, C14 = 5.6pF
L5 = 0.8pF, C13 = 5.1nH
L5 = 5.1nH, C14 = 0.7pF
L5 = 1.2nH, C14 = 1pF
LTC5585
22
5585f
APPLICATIONS INFORMATION
I-Channel and Q-Channel Outputs
The phase relationship between the I-channel output
signal and the Q-channel output signal is fixed. When the
LO input frequency is higher (or lower) than the RF input
frequency, the Q-channel outputs (Q
+
, Q

) lead (or lag)

the I-channel outputs (I
+
, I

) by 90.
Each of the I-channel and Q-channel outputs is internally
connected to V
CC
through a 100 resistor. In order to main-
tain an output DC bias voltage of V
CC
1.5V, external 100
pull-up resistors or equivalent 15mA DC current sources
are required. Each single-ended output has an impedance
of 100 in parallel with a 6pF internal capacitor. With an
external 100 pull-up resistor this forms a lowpass filter
with a 3dB corner frequency at 530MHz. The outputs
can be DC coupled or AC coupled to external loads. The
voltage conversion gain is reduced by the external load by:

20Log
10
1
2
+
50
R
PULL-UP
||R
LOAD(SE)

_
,

dB
when the output port is terminated by R
LOAD(SE)
. For in-
stance, the gain is reduced by 6dB when each output pin is
connected to a 50 load (or 100 differentially). The output
should be taken differentially (or by using differential-to-
single-ended conversion) for best RF performance, includ-
ing NF and IIP2. When no external filtering or matching
components are used, the output response is determined
by the loading capacitance and the total resistance loading
the outputs. The 3dB corner frequency, f
C
, is given by
the following equation:
f
C
= [2(R
LOAD(SE)
||100||R
PULL-UP
) (6pF)]
1
Figure 16 shows the actual measured output response
with various load resistances.
Figure 17 shows a simplified model of the I, Q outputs
with a 100 differential load and 100 pull-ups. The 1dB
bandwidth in this configuration is about 520MHz, or about
twice the 1dB bandwidth with no load.
TO IDENTICAL
Q-CHANNEL
PHASE SHIFTER
LTC5585
V
CC
LO
+
C37
1000pF
50
L5
LO
INPUT
(MATCHED) C13
C36
1000pF
LO

GND
5585 F14
C14
Figure 14. Recommended Single-Ended LO Input Configuration
Figure 15. Broadband IIP2 with Differential
and Single-Ended LO Drive
LO FREQUENCY (MHz)
400
30
I
I
P
2

(
d
B
m
)
40
60
70
80
100
1400 2400 2900 3400
5585 F15
50
90
900 1900 3900
SINGLE-ENDED LO, I SIDE
DIFFERENTIAL LO, I SIDE
SINGLE-ENDED LO, Q SIDE
DIFFERENTIAL LO, Q SIDE
T
C
= 25C
LTC5585
23
5585f
Figure 16. Conversion Gain Baseband Output Response with
R
LOAD(DIFF)
= 100, 200, 400 and 1k and R
PULL-UP
= 100
APPLICATIONS INFORMATION
Figure 18 shows a simplified model of the I, Q outputs
with a L-C matching network for bandwidth extension.
Capacitor C
S
serves to filter common mode LO switching
noise immediately at the demodulator outputs. Capacitor
C
C
in combination with inductor L
S
is used to peak the
output response to give greater bandwidth of 650MHz. In
this case, capacitor C
C
was chosen as a common mode
capacitor instead of a differential mode capacitor to increase
rejection of common mode LO switching noise.
When AC output coupling is used, the resulting highpass
filters 3dB roll-off frequency, f
C
, is defined by the R-C
constant of the external AC coupling capacitance, C
AC
, and
the differential load resistance, R
LOAD(DIFF)
:
f
C
= [2 R
LOAD(DIFF)
C
AC
]
1
Figure 17. Simplified Model of the Baseband Output
Figure 18. Simplified Model of the Baseband Output Showing Bandwidth Extension with External L, C Matching
100
LTC5585
100 6pF 6pF
0.2pF
I
+
I

0.2pF
5585 F17
R
LOAD(DIFF)
100
1dB BW = 520MHz
1.5nH
V
CC
V
CC
GND
1k
AC CURRENT
SOURCE
1.5nH
30mA 30mA
R
PULL-UP
100
R
PULL-UP
100
PACKAGE
PARASITICS
100
LTC5585
100 6pF 6pF
0.2pF
I
+
I

0.2pF
C
S
2pF
C
S
2pF
C
C
4pF
C
C
4pF
L
S
10nH
L
S
10nH
5585 F18
R
LOAD(DIFF)
100
LOWPASS
1dB BW = 650MHz
6mA MAX DC
1.5nF
V
CC
V
CC
GND
1k
AC CURRENT
SOURCE
1.5nF
30mA DC 30mA DC
R
PULL-UP
100
R
PULL-UP
100
PACKAGE
PARASITICS
BASEBAND FREQUENCY (GHz)
0
10
C
O
N
V
E
R
S
I
O
N

G
A
I
N

(
d
B
)
8
9
7
5
4
3
0
1
3
2
4
5
0.2 0.4
5585 G16
6
1
2
0.6 1.0 0.8 0.1 0.3 0.5 0.7 0.9
T
C
= 25C
R
LOAD(DIFF)
= 100, BW = 850MHz
R
LOAD(DIFF)
= 200, BW = 630MHz
R
LOAD(DIFF)
= 400, BW = 530MHz
R
LOAD(DIFF)
= 1k, BW = 460MHz
LTC5585
24
5585f
APPLICATIONS INFORMATION
Care should be taken when the demodulators outputs
are DC coupled to the external load to make sure that the
I/Q mixers are biased properly. If the current drain from
the outputs exceeds about 6mA, there can be significant
degradation of the linearity performance. Keeping the com-
mon mode output voltage of the demodulator above 3.15V,
with a 5V supply, will ensure optimum performance. Each
output can sink no more than 30mA when the outputs are
connected to an external load with a DC voltage higher
than V
CC
1.5V.
In order to achieve the best IIP2 performance, it is im-
portant to minimize high frequency coupling among the
baseband outputs, RF port, and LO port. Although it may
increase layout complexity, routing the baseband output
traces on the backside of the PCB can improve uncalibrated
IIP2 performance. Figure 19 shows the alternate layout
having the baseband outputs on the backside of the PCB.
Analog Control Voltage Pins
Figure 20 shows the equivalent circuit for the DCOI, DCOQ,
IP2I, and IP2Q pins. Internal temperature compensated
62.5A current sources keep these pins biased at a nominal
500mV through 8k resistors. A low impedance voltage
source with a source resistance of less than 200 is
recommended to drive these pins.
Figure 19. Alternate Layout of PCB with
Baseband Outputs on the Backside
Figure 20. Simplified Schematic of the Interface for the
DCOI, DCOQ, IP2I and IP2Q Pins
Figure 21. Simplified Schematic of the REF Pin Interface
GND
5585 F20
V
CC
8k
DCOI, DCOQ,
IP2I, IP2Q
62.5A
LTC5585
GND
5585 F21
V
CC
2k
REF
250A
LTC5585
As shown in Figure 21, the REF pin is similar to the DCOI
pin, but the bias current source is 250A, and the inter-
nal resistance is 2k. If this pin is left disconnected, it will
self-bias to 500mV. A low impedance voltage source with
a source resistance of less than 200 is recommended
to drive this pin. The control voltage range of the DCOI,
DCOQ, IP2I and IP2Q pins is set by the REF pin. This range
is equal to 0V to twice the voltage on the REF pin, whether
internally or externally applied.
It is recommended to decouple any AC noise present on
the signal lines that connect to the analog control-voltage
inputs. A shunt capacitor to ground placed close to these
pins can provide adequate filtering. For instance, a value
of 1000pF on the DCOI, DCOQ, IP2I and IP2Q pins will
provide a corner frequency of around 6 to 7MHz. A similar
corner frequency can be obtained on the REF pin with a
value of 3900pF. Using larger capacitance values such as
0.1F is recommended on these pins unless a faster control
LTC5585
25
5585f
APPLICATIONS INFORMATION
response is needed. Figure 22 shows the input response
3dB bandwidth for the pins versus shunt capacitance
when driven from a 50 source.
Figure 22. Input Response Bandwidth for the
DCOI, DCOQ, IP2I and IP2Q Pins
SAMPLE AND
HOLD
DC
AVERAGING
LOWPASS
FILTER
DSP
DAC
ADC
DCOI
f
LO
= 1950MHz 5585 F23
LNA
BPF
LTC5585
1-D
MINIMIZATION
ALGORITHM
Figure 23. Block Diagram of a Receiver with a DSP Feedback Loop for DC Offset Adjustment
FREQUENCY (MHz)
0
R
E
S
P
O
N
S
E

(
d
B
)
4
2
0
16
5585 F22
6
8
5
3
1
7
9
10
4 2 8 6 12 14 18 10 20
DCOI, DCOQ; C = 470pF
DCOI, DCOQ; C = 1000pF
IP2I, IP2Q; C = 100pF
T
C
= 25C
DC Offset Adjustment Circuitry
Any sources of LO leakage to the RF input of a direct
conversion receiver will contribute to the DC offsets of
its baseband outputs. The LTC5585 features DC offset
adjustment circuitry to reduce such effects. When the
EDC pin is a logic high the circuitry is enabled and the
resulting DC offset adjustment range is typically 20mV.
In a typical direct conversion receiver application, DC
offset calibration will be done periodically at a time when
no receive data is present and when the receiver DC levels
have sufficiently settled.
DC Offset Adjustment Example
Figure 23 shows a typical direct conversion receive path
having a DSP feedback path for DC offset adjustment.
Any sources of LO leakage to the RF input of the LTC5585
demodulator will contribute to the DC offset of the receiver.
This includes both static and dynamic DC offsets. If the
coupling is static in nature due to fixed board-level leakage
paths, the resulting DC offset does not typically need to
be adjusted at a high repetition rate. Dynamic DC offsets
due to transmitter transient leakage or antenna reflection
can be much harder to correct for and will require a faster
update rate from the DSP.
LO leakage into the RF port of the demodulator causes a
DC offset at the baseband outputs which is then multiplied
by the gain in the baseband path. The usable ADC voltage
window will be reduced by the amplified DC offset, resulting
in lower dynamic range. Using DSP, this DC offset value
can be averaged and sampled at a given update rate and
then a 1D minimization algorithm can be applied before
a new DCOI or DCOQ control signal is generated to mini-
mize the offset. The 1-D minimization algorithm can be
implemented in many ways such as golden-section search,
backtracking, or Newtons method.
IM2 Adjustment Circuitry
The LTC5585 also contains circuitry for the independent
adjustment of IM2 levels on the I and Q channels. When
the EIP2 pin is a logic high, this circuitry is enabled and
the IP2I and IP2Q analog control voltage inputs are able
LTC5585
26
5585f
APPLICATIONS INFORMATION
to adjust the IM2 level. The IM2 level can be effectively
minimized over a large range of the baseband bandwidth.
The circuitry has an effective baseband frequency upper
limit of about 200MHz. Any IM2 component that falls in this
frequency range can be minimized. Beyond this frequency,
the gain of the IM2 correction amplifier falls off appreciably
and the circuit no longer improves IP2 performance. The
lower baseband frequency limit of the IM2 adjustment
circuitry is set by the common mode reference decoupling
capacitor at the CMI and CMQ pins. Below this frequency
the circuit can not minimize the IM2 component.
Figure 24 shows the CMI (and identical CMQ) pin interface.
These pins have an internal 40pF decoupling capacitance
to V
CC
, to provide a reference for the IP2 adjustment cir-
cuitry. The lower 3dB frequency limit, f
C
, of the circuitry
is set by the following equation:
f
C
= [2 500(40pF + C
CM(EXT)
)]
1
Without any external capacitor on the CMI or CMQ pin the
lower limit is 8MHz. By adding a 0.1F capacitor, C
CM(EXT)
,
between the CMI and CMQ pins to V
CAP
, the lower 3dB
frequency corner can be reduced to 3kHz. Figure 25 shows
IIP2 as a function of RF frequency spacing versus common
mode decoupling capacitance values of 0.1F and 1500pF.
There is effectively no limit on the size of this capacitor,
other than the impact it has on enable time for the IM2
circuitry to be operational. When the chip is disabled, there
is no current in the I or Q mixers, so the common mode
output voltage will be equal to V
CC
(if no DC common mode
current is being drawn by external baseband circuitry such
as a baseband amplifier). When the chip is enabled, the
off-chip common mode decouping capacitor must charge
up through a 500 resistor. The time constant for this is
essentially 500 times the common mode decoupling
capacitance value. For example, with a 0.01F capacitor
this wait time is approximately 30s. Figure 26 shows
the pulsed enable response of the common-mode output
voltage with 0.01F on the CMI and CMQ pins.
Figure 24. Equivalent Circuit of the CMI and CMQ Pin Interfaces Figure 26. Common Mode Output Voltage with a Pulsed Enable
Figure 25. IIP2 vs Common Mode Decoupling Capacitance
GND
5585 F24
V
CC
V
CAP
CMI OR CMQ
40pF
LTC5585
RF FREQUENCY SPACING (MHz)
0.01
30
I
I
P
2

(
d
B
m
)
50
60
70
80
90
100
0.1 1
5585 F25
110
120
130
T
C
= 25C
f
RF1
= 2150MHz
f
LO
= 2100MHz
40
10
0.1F (UNCALIBRATED)
0.1F (NULLED IP2I = 0.1V)
1500pF (UNCALIBRATED)
1500pF (NULLED IP2I = 0.15V)
TIME (s)
0
V
C
M

(
V
)
E
N
A
B
L
E

V
O
L
T
A
G
E

(
V
)
6
7
8
80
5585 F26
5
4
3
0
5
10
5
10
15
10 20 30 40 50 60 70 90 100
T
C
= 25C
C
CMI,Q
= 0.01F
EN
PULSE
OFF
EN PULSE ON
CMI, CMQ
BASEBAND OUTPUTS
LTC5585
27
5585f
IM2 Suppression Example
IM2 adjustment circuitry can be used in a typical trans-
ceiver loop-back application as shown in Figure 27. In
this example a 2-tone SSB training source of f1 = 20MHz
and f2 = 21MHz is generated in DSP and upconverted
by the LTC5588-1 quadrature modulator to RF tones at
1970MHz and 1971MHz using an LO source at 1950MHz.
A narrowband RF filter is required to remove the IM2
component generated by the LTC5588-1. During the
loopback test these RF tones are routed through high
isolation switches and an attenuation pad to the LTC5585
demodulator input. The tones are then downconverted by
the same LO source at 1950MHz to produce two tones
at the baseband outputs of 20MHz and 21MHz plus an
IM2 impairment signal at 1MHz. After baseband chan-
nel filtering and amplification the output of the ADC is
filtered by a 1MHz bandpass filter in DSP to isolate the
IM2 tone. The power in this tone is calculated in DSP and
then a 1-D minimization algorithm is applied to calculate
the correction signal for the IP2I control voltage pin. The
1-D minimization algorithm can be implemented in many
ways such as golden-section search, backtracking or
Newtons method.
Enable Interface
A simplified schematic of the EN pin is shown in Figure28.
The enable voltage necessary to turn on the LTC5585 is 2V.
To disable or turn off the chip, this voltage should be below
0.3V. If the EN pin is not connected, the chip is disabled.
APPLICATIONS INFORMATION
Figure 27. Block Diagram for a Direct Conversion Transceiver with IM2 Adjustment. Only the I-Channel Is Shown
Figure 28. Simplified Schematic of the EN Pin Interface
Figure 29. Simplified Schematic of the EDC Pin Interface
RMS
DETECTION
1MHz BPF
DSP
DAC
ADC
IP2I
f
LO
= 1950MHz
f1 = 20MHz
f2 = 21MHz
5585 F27
LNA
LTC5585
LOOPBACK
LTC5588-1
1-D
MINIMIZATION
ALGORITHM
DAC
PA
+
100k
EN
LTC5585
GND
5585 F28
V
CC
100k
EN
100k
100k
EDC
LTC5585
5585 F29
V
CC
GND
Figures 29 and 30 show the simplified schematics for the
EDC and EIP2 pins
LTC5585
28
5585f
APPLICATIONS INFORMATION
It is important that the voltage applied to the EN, EDC and
EIP2 pins should never exceed V
CC
by more than 0.3V.
Otherwise, the supply current may be sourced through the
upper ESD protection diode connected at the pin. Under
no circumstances should voltage be applied to the enable
pins before the supply voltage is applied to the V
CC
pin. If
this occurs, damage to the IC may result.
Figure 31 shows the simplified schematic of the V
BIAS

interface. The V
BIAS
pin can be used to lower the mixer
core bias current and total power consumption for the
chip. For example, adding 1k from the V
BIAS
pin to
GND will lower the DC current to 150mA, at the expense
of reduced IIP3 performance. Figure 32 shows IIP3 and
P1dB performance versus DC current and resistor value.
An optional capacitor, C
OPT
in Figure 31, has minimal effect
on improving PSRR and IIP2.
1950MHz Receiver Application
Figure 33 shows a typical receiver application consisting of
the chain of LNA, demodulator, lowpass filter, ADC driver,
and ADC. Total DC power consumption is about 2.1W.
Full-scale power at the RF input is -6dBm. The Chebychev
lowpass filter with unequal terminations is designed us-
ing the method shown in the appendix. Filter component
values are then adjusted for the best overall response
and available component values. A positive voltage gain
Figure 32. IIP3 and P1dBm vs DC Current
and V
BIAS
Resistor Value
EN
V
CC
GND
5585 F31
100
V
BIAS
C
OPT
OPTIONAL R
TO REDUCE
CURRENT
LTC5585
Figure 31. Simplified Schematic of the V
BIAS
Pin Interface
100k
EIP2
LTC5585
GND
5585 F30
V
CC
100k
10k
Figure 30. Simplified Schematic of the EIP2 Pin Interface
LO FREQUENCY (MHz)
1500
5
I
I
P
3
,

P
1
d
B

(
d
B
m
)
15
20
25
50
35
1700 1900 2000 2100
5585 G21
10
40
45
30
1600 1800 2200
I, 190mA
I, 170mA, 487
I, 150mA, 294
Q, 190mA
Q, 170mA, 487
Q, 150mA, 294
T
C
= 25C
f
RF
= 1950MHz
IIP3
P1dB
slope with frequency is necessary to compensate for the
roll-off contributed by the ADC Driver and Anti-Alias Filter.
From the chain analysis shown in Figure 34, the IIP3-NF
dynamic range figure of merit (FOM) is 4.3dB at the LNA
input, 7.5dB at the demodulator input, and 14.85dB at the
ADC driver amp input.
The measured 6th order lowpass baseband response is
shown in Figure 35.
LTC5585
29
5585f
APPLICATIONS INFORMATION
D
1
3
D
0
C
O
N
T
R
O
L
V
C
M
V
D
D
L
T
C
2
1
8
5
A
D
C
1
.
8
V
2
0
6
m
A
5
V
2
0
0
m
A
5
V
4
8
m
A
A
I
N
+
A
I
N

R
2
0
1
0
5

C
2
2
6
2
p
F
C
2
1
6
2
p
F
R
1
9
1
0
5

R
1
6
3
5

R
1
5
3
5

R
5
1
1
0

R
4
1
1
0

C
2
3
1

F
5
5
8
5
F
3
3
R
1
8
8
3

R
1
7
8
3

R
1
0
1
0
0

R
1
2
1
0

R
8
4
4
0

R
9
4
4
0

R
7
3
0

R
2
5
.
6
k
R
6
3
0

R
1
1
1
0

R
1
3
1
3
8

R
1
4
1
3
8

5
V
5
2
m
A
C
1
9
0
.
4
p
F
C
2
0
0
.
4
p
F
C
1
8
0
.
1

F
L
1
2

1
8
0
n
H
L
1
1

1
8
0
n
H
L
8

1
8
0
n
H
L
7

1
8
0
n
H
4
0
M
H
z

L
O
W
P
A
S
S

F
I
L
T
E
R
4
0
M
H
z

A
N
T
I
-
A
L
I
A
S

F
I
L
T
E
R
L
6

4
7
0
n
H
L
3

4
.
7
n
H
A
V
A
G
O
M
G
A
-
6
3
4
P
8
L
2
8
.
2
n
H
L
4

4
.
7
n
H
T
1

A
N
A
R
E
N

B
D
2
4
2
5
J
5
0
2
0
0
A
H
F
L
5

4
7
0
n
H
L
1
0

1
8
0
n
H
L
9

1
8
0
n
H

C
1
5
1
5
0
p
F
C
1
6
1
5
0
p
F
C
1
7
1

F
R
3
0

R
1
4
9
.
9

+
+
V
O
C
N
L
T
C
6
4
0
9
C
1
3
1
5
0
p
F
C
1
4
1
5
0
p
F
C
1
2
4
7
p
F
C
1
0
1
0
0
p
F
C
1
1
1
0
0
p
F
L
O

I
N
P
U
T
1
9
5
0
M
H
z
6
d
B
m
C
9
4
7
p
F
L
2
8
.
2
n
H
C
7
0
.
5
p
F
C
2
1
0
0
p
F
C
1
1
0
0
p
F
R
F

I
N
P
U
T
1
9
1
0
M
H
z
T
O

1
9
9
0
M
H
z
C
4
1
0
0
p
F
C
5
1
0
0
p
F
C
3
4
.
7

F
C
6
4
.
7

F
C
8
0
.
5
p
F
I
+
V
C
C
I

R
F
L
O

L
O
+
L
T
C
5
5
8
5
L
N
A
B
I
A
S
F
i
g
u
r
e

3
3
.

S
i
m
p
l
i
f
i
e
d

S
c
h
e
m
a
t
i
c

o
f

1
9
5
0
M
H
z

R
e
c
e
i
v
e
r
,

(
O
n
l
y

I
-
C
h
a
n
n
e
l

i
s

S
h
o
w
n
)
LTC5585
30
5585f
APPLICATIONS INFORMATION
Figure 34. 1950MHz Receiver Chain Analysis
LTC2185
5585 F34
40MHz AAF LTC6409
G = 0dB
NF = 23.1dB
IP3 = 47.5dBm
G = 1.2dB
NF = 1.2dB
G = 0dB
NF = 23.1dB
IIP3 = 47.5dBm
FOM = 24.4dB
G = 1.2dB
NF = 24.3dB
IIP3 = 48.7dBm
FOM = 24.4dB
40MHz LPF
1950MHz Receiver Chain Analysis
LTC5585
G = 0.3dB
NF = 0.3dB
G = 6.3dB
NF = 13dB
IIP3 = 27dBm
G = 21.5dB
NF = 10.85dB
IIP3 = 25.7dBm
FOM = 14.85dB
G = 15.2dB
NF = 18.3dB
IIP3 = 25.8dBm
FOM = 7.5dB
G = 21.8dB
NF = 10.55dB
IIP3 = 25.4dBm
FOM = 14.85dB
G = 23dB
NF = 10dB
OIP3 = 50dBm
MGA-634P8
G = 32.6dB
NF = 3.7dB
IIP3 = 8dBm
FOM = 4.3dB
G = 17.4dB
NF = 0.44dB
OIP3 = 36dBm
The receiver spurious free dynamic range (SFDR) in terms
of FOM can be calculated using the following equations:
FOM = IIP3 NF
SFDR = 2/3(FOM P
0
)
P
0
= 174dBm + 10Log
10
(BW|
Hz
)
where P
0
is the input noise power and 174dBm is the
input thermal noise power in a 1Hz bandwidth. A measured
2-tone output spectrum at 1910MHz is shown in Figure36.
IIP3 is calculated from the 2-tone IM3 levels:
IIP3 = (7.067 (76.63))/2 13
IIP3 = 21.78dBm
Figure 35. Baseband Gain Response without LNA
For this example, receiver noise floor is approximated
by a measurement at 845MHz, where adequate filtering
for RF and LO signals was possible. Using the test data
from Figure 37, the receiver noise figure for the I-channel
(Ch1) is calculated using the 6dBm input power, 15kHz
bin width, 40MHz bandwidth, and 116.3dBFS measured
in-band noise floor:
SNR
IN
= P
IN
P
0
SNR
IN
= 6 (174 + 76) = 92dB
SNR
OUT
= 10 Log
10
(BinW/BW) Floor
SNR
OUT
= 43.3 + 116.3 = 73dB
NF = SNR
IN
SNR
OUT
NF = 92 73 = 19dB
Finally, an approximate receiver spurious free dynamic
range can be calculated using the measured data at
845MHz and 1910MHz:
SFDR = 2(IIP3 NF P
0
)/3
SFDR = 2(21.78 19 (174 + 76))/3
SFDR = 67.2dB (I-channel)
Measured IIP3 is 2.3dB higher for the Q-channel, so the
resulting SFDR is:
SFDR = 68.7dB (Q-channel)
FREQUENCY (MHz)
0
80
G
A
I
N

(
d
B
)
70
50
40
30
20
10
40 80 100
5585 F35
60
0
10
20
20 60 120 140 160
T
C
= 25C
LTC5585
31
5585f
APPLICATIONS INFORMATION
Figure 36. f
RF
= 1909MHz and 1910MHz 2-Tone Receiver Test, f
LO
= 1930MHz.
Ch.1 is the I-Channel and Ch.2 is the Q-Channel. Tested without LNA
LTC5585
32
5585f
APPLICATIONS INFORMATION
Figure 37. f
RF
= 845MHz Receiver Noise Floor Test, f
LO
= 846MHz.
Ch.1 is the I-Channel and Ch.2 is the Q-Channel. Tested without LNA
LTC5585
33
5585f
APPENDIX
Chebychev Filter Synthesis with Unequal
Terminations
To synthesize Chebychev filters with unequal terminations,
two equally terminated filters are synthesized at the two
different impedance levels and the resulting networks are
joined using the Impedance Bisection Theorem[1]. This
method only works with symmetrical odd-order filters. The
general lowpass prototype element values are generated
by the method shown [2]:


In coth
L
Ar
|
dB
17.37

1
]
1
sinh

2n

_
,

a
k
sin
2k 1 ( )
2n
, k 1,2,...,n
b
k

2
+sin
2
k
n
, k 1,2,...,n
where L
Ar
|
dB
is the passband ripple in dB, and n is the
filter order.
The prototype element values will be:


g
1

2a
1

g
k

4a
k
a
k1
b
k1
g
k1
, k 1,2,...,n
g
n+1
1 for n odd
g
n+1
coth
2

4

_
,

for n even
Assuming the first element is a capacitor, we can scale the
filter capacitor prototype values up to our desired cutoff
frequency f
C
:


C
k

g
k
2 f
C
R
IN
, k 1,3,...,n
The filter inductor values can be scaled with:

L
K

g
k
R
IN
2 f
C
, k 2,4,...,n
where R
IN
is the input impedance and the terminating
impedance R
OUT
is equal to R
IN
for the n odd case but is
scaled by the g
n+1
prototype value for the n even case.
The Impedance Bisection Theorem can be applied to sym-
metrical networks by dividing the element values along
the networks plane of symmetry, and then adding the
two networks together. The filter response is preserved.
For example, if L
Ar
|
dB
= 0.2dB, f
C
= 40MHz, R
IN
= 100,
R
OUT
= 20 and n = 5, the prototype element values and
resulting scaled filter values are listed:
Filter 1: R
IN
= R
OUT
= 100
g
1
= 1.339 C1 = 53.3pF
g
2
= 1.337 L1 = 531.98nH
g
3
= 2.166 C2 = 86.19pF
g
4
= 1.337 L2 = 531.98nH
g
5
= 1.339 C3 = 53.3pF
Filter 2: R
IN
= R
OUT
= 20
g
1
= 1.339 C1 = 266.48pF
g
2
= 1.337 L1 = 106.4nH
g
3
= 2.166 C2 = 430.93pF
g
4
= 1.337 L2 = 106.4nH
g
5
= 1.339 C3 = 266.48pF
The Impedance Bisection Theorem can be applied at the
plane of symmetry about C2 such that a new value of C2
can be computed with half the values of the two filters.

C2
86.19pF
2
+
430.93pF
2
258.56pF
The final unequally-terminated filter design values are
shown in Figure 38.
Figure 38. Final Design Schematic
+

R
IN
100
L1
531.98nH
C1
53.3pF
C2
258.56pF
L2
106.4nH
C3
266.48pF
R
OUT
20
5585 F38
[1] A.C. Bartlett, An Extension of a Property of Artificial Lines, Phil. Mag., vol.4, p.902,
November 1927.
[2] G. Matthaei, L. Young, and E.M.T. Jones, Microwave Filters, Impedance-Matching Networks,
and Coupling Structures, p.99, 1964.
LTC5585
34
5585f
APPENDIX
Image Rejection Calculation
Image rejection can be calculated from the measured gain
and phase error responses of the demodulator. Consider
the signal diagram of Figure 39:
We combine I(t) + Q
90
(t) and choose terms containing

BB
as the desired signal:

desired
1
2
sin
BB
t ( )+
A
ERR
2
sin
BB
t
ERR
( )
Similarly, we choose terms containing
IM
as the image
signal:

image
1
2
sin
IM
t ( )
A
ERR
2
sin
IM
t +
ERR
( )
The image rejection ratio (IRR) can then be written as:

IRR|
dB
10log
| desired|
2
|image|
2
Written in terms of A
ERR
and
ERR
as:

IRR|
dB
10log
|1+A
ERR
2
+2A
ERR
cos
ERR
( )|
|1+A
ERR
2
2A
ERR
cos
ERR
( )|
Figure 40 shows image rejection as a function of amplitude
and phase errors for a demodulator.
A
ERR
LO
I
(t)
LO
Q
(t)
RF(t)
I(t)
Q(t)
5585 F39
Figure 39. Signal Diagram for a Demodulator
where:
RF(t) = sin(
LO
+
BB
)t + sin(
LO

IM
)t
LO
I
(t) = cos(
LO
t +
ERR
)
LO
Q
(t) = sin(
LO
t)

LO
+
BB
is the desired sideband frequency and

LO

IM
is the image frequency. The total phase error
of the I and Q channels is lumped into the I-channel LO
source as
ERR
. The total gain error is represented by
A
ERR
, and is lumped into a gain multiplier in the I-channel.
After lowpass filtering the I and Q signals can be written as:

I(t)
A
ERR
2
sin
BB
t
ERR
( ) sin
IM
t +
ERR
( )

1
]
Q(t)
1
2
cos
BB
t ( )+cos
IM
t ( )

1
]
Shifting the Q channel by 90 can be accomplished by
replacing sine with cosine such that the shifted Q-channel
signal is:

Q
90
(t)
1
2
sin
BB
t ( )+sin
IM
t ( )

1
]
Figure 40. Image Rejection as a Function of Gain and Phase Errors
PHASE ERROR (DEG)
10
I
M
A
G
E

R
E
J
E
C
T
I
O
N

(
d
B
)
30
50
70
20
40
60
2 4 6 8
5585 F40
10 1 0 3 5 7 9
A
ERR
= 0dB
A
ERR
= 0.05dB
A
ERR
= 0.1dB
A
ERR
= 0.2dB
A
ERR
= 0.3dB
A
ERR
= 0.5dB
A
ERR
= 1dB
LTC5585
35
5585f
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representa-
tion that the interconnection of its circuits as described herein will not infringe on existing patent rights.
PACKAGE DESCRIPTION
Please refer to http://www.linear.com/designtools/packaging/ for the most recent package drawings.
4.00 0.10
(4 SIDES)
NOTE:
1. DRAWING PROPOSED TO BE MADE A JEDEC PACKAGE OUTLINE MO-220 VARIATION (WGGD-X)TO BE APPROVED
2. DRAWING NOT TO SCALE
3. ALL DIMENSIONS ARE IN MILLIMETERS
4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE
MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE, IF PRESENT
5. EXPOSED PAD SHALL BE SOLDER PLATED
6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION
ON THE TOP AND BOTTOM OF PACKAGE
PIN 1
TOP MARK
(NOTE 6)
0.40 0.10
24 23
1
2
BOTTOM VIEWEXPOSED PAD
2.45 0.10
(4-SIDES)
0.75 0.05 R = 0.115
TYP
0.25 0.05
0.50 BSC
0.200 REF
0.00 0.05
(UF24) QFN 0105
RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS
0.70 0.05
0.25 0.05
0.50 BSC
2.45 0.05
(4 SIDES)
3.10 0.05
4.50 0.05
PACKAGE OUTLINE
PIN 1 NOTCH
R = 0.20 TYP OR
0.35 45 CHAMFER
UF Package
24-Lead Plastic QFN (4mm 4mm)
(Reference LTC DWG # 05-08-1697)
LTC5585
36
5585f
Linear Technology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900

FAX: (408) 434-0507

www.linear.com LINEAR TECHNOLOGY CORPORATION 2012
LT 0112 PRINTED IN USA
RELATED PARTS
TYPICAL APPLICATION
Simplified Schematic of 1950MHz Receiver, (Only I-Channel Is Shown)
D13
D0
CONTROL
V
CM
V
DD
LTC2185
ADC
1.8V
206mA
5V
200mA
A
IN
+
A
IN

R20
105
C22
62pF
C21
62pF
R19
105
R16
35
R15
35
R5
110
R4
110
C23
1F
5585 TA02
R18
83
R17
83
R10
100
R12
10
R8
440
R9
440
R7
30
R6
30
R11
10
R13
138
R14
138
5V
52mA
C19
0.4pF
C20
0.4pF
C18
0.1F
L12 180nH
L11 180nH
L8 180nH
L7 180nH
40MHz LOWPASS FILTER
L6 470nH
L3 4.7nH
L4 4.7nH
T1
ANAREN BD2425J50200AHF
L5 470nH
L10 180nH
L9 180nH

C15
150pF
C16
150pF
C17
1F

+
+
V
OCM
LTC6409
C13
150pF
C14
150pF
C12
47pF
C10
100pF
C11
100pF
LO INPUT
1950MHz
6dBm
C9
47pF
C7
0.5pF C2
100pF
C8
0.5pF
I
+
V
CC
I

RF
LO

LO
+
LTC5585 RF INPUT
1910MHz
TO
1990MHz
40MHz ANTI-ALIAS FILTER (AAF)
PART
NUMBER DESCRIPTION COMMENTS
Infrastructure
LTC5569 300MHz to 4GHz Dual Active Downconverting Mixer 2dB Gain, 26.7dBm IIP3 and 11.7dB NF at 1950MHz, 3.3V/180mA Supply
LT5527 400MHz to 3.7GHz, 5V Downconverting Mixer 2.3dB Gain, 23.5dBm IIP3 and 12.5dB NF at 1900MHz, 5V/78mA Supply
LT5557 400MHz to 3.8GHz, 3.3V Downconverting Mixer 2.9dB Gain, 24.7dBm IIP3 and 11.7dB NF at 1950MHz, 3.3V/82mA Supply
LTC6409 10GHz GBW Differential Amplifier DC-Coupled, 48dBm OIP3 at 140MHz, 1.1nV/Hz Input Noise Density
LTC6412 31dB Linear Analog VGA 35dBm OIP3 at 240MHz, Continuous Gain Range 14dB to 17dB
LTC554X 600MHz to 4GHz Downconverting Mixer Family 8dB Gain, >25dBm IIP3, 10dB NF, 3.3V/200mA Supply
LT5554 Ultralow Distortion IF Digital VGA 48dBm OIP3 at 200MHz, 2dB to 18dB Gain Range, 0.125dB Gain Steps
LT5578 400MHz to 2.7GHz Upconverting Mixer 27dBm OIP3 at 900MHz, 24.2dBm at 1.95GHz, Integrated RF Transformer
LT5579 1.5GHz to 3.8GHz Upconverting Mixer 27.3dBm OIP3 at 2.14GHz, NF = 9.9dB, 3.3V Supply, Single-Ended LO and RF Ports
LTC5590 Dual 600MHz to 1.7GHz Downconverting Mixer 8.7dB Gain, 26dBm IIP3, 9.7dB Noise Figure
LTC5591 Dual 1.3GHz to 2.3GHz Downconverting Mixer 8.5dB Gain, 26.2dBm IIP3, 9.9dB Noise Figure
LTC5592 Dual 1.6GHz to 2.7GHz Downconverting Mixer 8.3dB Gain, 27.3dBm IIP3, 9.8dB Noise Figure
RF PLL/Synthesizer with VCO
LTC6946-1 Low Noise, Low Spurious Integer-N PLL with
Integrated VCO
373MHz to 3.74GHz, 157dBc/Hz WB Phase Noise Floor, 100dBc/Hz Closed-Loop
Phase Noise
LTC6946-2 Low Noise, Low Spurious Integer-N PLL with
Integrated VCO
513MHz to 4.9GHz, 157dBc/Hz WB Phase Noise Floor, 100dBc/Hz Closed-Loop
Phase Noise
LTC6946-3 Low Noise, Low Spurious Integer-N PLL with
Integrated VCO
640MHz to 5.79GHz, 157dBc/Hz WB Phase Noise Floor, 100dBc/Hz Closed-Loop
Phase Noise
ADCs
LTC2145-14 14-Bit, 125Msps 1.8V Dual ADC 73.1dB SNR, 90dB SFDR, 95mW/Ch Power Consumption
LTC2185 16-Bit, 125Msps 1.8V Dual ADC 76.8dB SNR, 90dB SFDR, 185mW/Channel Power Consumption
LTC2158-14 14-Bit, 310Msps 1.8V Dual ADC, 1.25GHz Full-Power
Bandwidth
68.8dB SNR, 88dB SFDR, 362mW/Ch Power Consumption, 1.32V
P-P
Input Range