FDS8958A

January 2001

FDS8958A
Dual N & P-Channel PowerTrench MOSFET
General Description
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Features
Q1: N-Channel RDS(on) = 0.028 @ VGS = 10V RDS(on) = 0.040 @ VGS = 4.5V Q2: P-Channel RDS(on) = 0.052 @ VGS = -10V RDS(on) = 0.080 @ VGS = -4.5V Fast switching speed High power and handling capability in a widely used surface mount package 7.0A, 30V

-5A, -30V

D1 D

D1 D

DD2 D2 D

5 6

Q2

4 3

Q1

SO-8
Pin 1 SO-8

G1 S1 S

G2 S2 G

7 8

2 1

Absolute Maximum Ratings

Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current

TA = 25C unless otherwise noted

Parameter

Q1
30
(Note 1a)

Q2
30 20 -5 -20 2 1.6 1 0.9 -55 to +150

Units
V V A W

- Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation

20 7 20

(Note 1a) (Note 1b) (Note 1c)

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)

78 40

C/W C/W

Package Marking and Ordering Information

Device Marking FDS8958A
2001 Fairchild Semiconductor International

Device FDS8958A

Reel Size 13

Tape width 12mm

Quantity 2500 units

FDS8958A Rev D(W)

FDS8958A

Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSSF IGSSR

TA = 25C unless otherwise noted

Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward

Test Conditions
VGS = 0 V, ID = 250 A VGS = 0 V, ID = -250 A ID = 250 A, Referenced to 25C ID = -250 A, Referenced to 25C VDS = 24 V, VGS = 0 V VDS = -24 V, VGS = 0 V VGS = 20 V, VDS = 0 V

Type Min Typ Max Units

Q1 Q2 Q1 Q2 Q1 Q2 All All 30 -30 25 -22 1 -1 100 -100 V mV/C A nA nA

Off Characteristics

Gate-Body Leakage, Reverse VGS = -20 V, VDS = 0 V

(Note 2)

On Characteristics
VGS(th) VGS(th) TJ RDS(on)

Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance

ID(on) gFS

On-State Drain Current Forward Transconductance

VDS = VGS, ID = 250 A VDS = VGS, ID = -250 A ID = 250 A, Referenced to 25C ID = -250 A, Referenced to 25C VGS = 10 V, ID = 7 A VGS = 10 V, ID = 7 A, TJ = 125C VGS = 4.5 V, ID = 6 A VGS = -10 V, ID = -5 A VGS = -10 V, ID = -5 A, TJ = 125C VGS = -4.5 V, ID = -4 A VGS = 10 V, VDS = 5 V VGS = -10 V, VDS = -5 V VDS = 5 V, ID = 7 A VDS = -5 V, ID =-5 A Q1 VDS = 10 V, VGS = 0 V, f = 1.0 MHz

Q1 Q2 Q1 Q2 Q1

1 -1

1.6 -1.7 -4.3 4 21 32 27 41 58 58

3 -3

V mV/C

28 42 40 52 78 80

Q2

Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2

20 -20 19 11 789 690 173 306 66 77

A S

Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Q2 Reverse Transfer Capacitance VDS = -10 V, VGS = 0 V, f = 1.0 MHz pF pF pF

FDS8958A Rev D(W)

Electrical Characteristics
Symbol Parameter

(continued)

TA = 25C unless otherwise noted

Test Conditions
(Note 2)

Type Min

Typ

Max Units

Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge

Q1 VDD = 10 V, ID = 1 A, VGS = 10V, RGEN = 6 Q2 VDD = -10 V, ID = -1 A, VGS = -10V, RGEN = 6 Q1 VDS = 15 V, ID = 7 A, VGS = 10 V Q2 VDS = -15 V, ID = -5 A,VGS = -10 V

Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2

2.2 6.7 7.5 9.7 11.8 19.8 3.7 12.3 16 14 2.5 2.4 2.6 4.8

4.4 13.4 15 19.4 21.3 35.6 7.4 22.2 26 23

ns ns ns ns nC nC nC

DrainSource Diode Characteristics and Maximum Ratings

IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = 1.3 A Voltage VGS = 0 V, IS = -1.3 A
(Note 2) (Note 2)

0.74 -0.76

1.3 -1.3 1.2 -1.2

A V

Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.

a) 78/W when mounted on a 2 0.5 in pad of 2 oz copper

b) 125/W when mounted on a .02 in2 pad of 2 oz copper

c) 135/W when mounted on a minimum pad.

Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%

FDS8958A Rev D(W)

FDS8958A

Typical Characteristics: Q1

30 VGS = 10V 7.0V 5.0V 20 4.5V 4.0V 3.5V

2.4 2.2 2.0 1.8 1.6 3.0V 1.4 1.2 2.5V 1.0 0.8 0 1 2 3 4 5 0 6 12 18 24 30 3.5V 4.0V 4.5V 5.0V 6.0V 7.0V 10V VGS = 3.0V

10

VDS, DRAIN-SOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.

0.09

1.9

ID = 7A VGS = 10V

0.08 0.07 0.06 0.05 TA = 125 C

o

ID = 7A

1.6

1.3

1.0

0.04 0.03 0.02 TA = 25 C

o

0.7

0.4 -50 -25 0 25 50 75 100

o

0.01 125 150 2 4 6 8 10 TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with Temperature.

30 VDS = 10V 25 20 125 C 15
o o

Figure 4. On-Resistance Variation with Gate-to-Source Voltage.

100 VGS = 0V

TA = -55 C

25 C

10 TA = 125 C 1 25 C 0.1
o o

10 0.01 5 0 1 2 3 4 5 0.001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -55 C

o

VGS, GATE TO SOURCE VOLTAGE (V)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.

FDS8958A Rev D(W)

FDS8958A

Typical Characteristics: Q1

10 ID =7A 8 15V 6 VDS = 5V 10V

1200 f = 1MHz VGS = 0 V 900 CISS

600 4 300 2

COSS CRSS

0 0 4 8 Qg, GATE CHARGE (nC) 12 16

0 0.0 5.0 10.0 15.0 20.0

VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics.

100 RDS(ON) LIMIT 100s 1ms 10ms 100ms 1 VGS = 10V SINGLE PULSE RJA = 135 C/W TA = 25 C 0.01 0.1 1 10 100 0
o o

Figure 8. Capacitance Characteristics.

50 SINGLE PULSE RJA = 135C/W TA = 25C

40

10

30

1s 10s DC 20

0.1

10

0.001

0.01

0.1

1 t1, TIME (sec)

10

100

1000

VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum Power Dissipation.

FDS8958A Rev D(W)

FDS8958A

Typical Characteristics Q2

30 VGS = -10.0V 25 20 15 10 5 0 0 1 2 3 4 5 -3.5V -7.0V -5.0V -6.0V -4.0V

2.5 VGS = -3.5V 2 -4.0V -4.5V 1.5 -5.0V -6.0V -7.0V 1 -3.0V -10.0V

0.5 0 6 12 18 24 30 -ID, DRAIN CURRENT (A)

-VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 11. On-Region Characteristics.

Figure 12. On-Resistance Variation with Drain Current and Gate Voltage.
0.2

1.6 ID = -5A VGS = -10V

ID = -5A

1.4

0.15 1.2 0.1 1.0 0.05 0.8 TA = 125 C TA = 25 C

o o

0.6 -50 -25 0 25 50 75 100

o

0 125 150 2 4 6 8 10

TJ, JUNCTION TEMPERATURE ( C)

-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 13. On-Resistance Variation with Temperature.

30 VDS = -10V 25 20 15 125 C 10 5 0 1.5 2.5 3.5 4.5 5.5
o

Figure 14. On-Resistance Variation with Gate-to-Source Voltage.

100

TA = -55 C 10 25 C 1
o

VGS = 0V

TA = 125 C 25 C
o

0.1

-55 C

0.01

0.001 0 0.2 0.4 0.6 0.8 1 1.2 1.4

-VGS, GATE TO SOURCE VOLTAGE (V)

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 15. Transfer Characteristics.

Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature.

FDS8958A Rev D(W)

FDS8958A

Typical Characteristics Q2

10 ID = -5.3A VDS = -5V 8 -15V 6 -10V

1000

f = 1 MHz VGS = 0 V CISS

800

600

400

COSS

200 CRSS 0 0 5 10 15 0 5 10 15 20 Qg, GATE CHARGE (nC)

-VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 17. Gate Charge Characteristics.

100 RDS(ON) LIMIT 10 1ms 100 s 10ms 100ms 1s 1 DC 0.1 VGS = -10V SINGLE PULSE RJA = 135 C/W TA = 25 C 0.01 0.1 1 10 100 0
o o

Figure 18. Capacitance Characteristics.

50 SINGLE PULSE RJA = 135C/W TA = 25C

40

30

10s 20

10

0.001

0.01

0.1

10

100

-VDS, DRAIN-SOURCE VOLTAGE (V)

t1, TIME (sec)

Figure 19. Maximum Safe Operating Area.

Figure 20. Single Pulse Maximum Power Dissipation.

1
D = 0.5 0.2

RJA(t) = r(t) + RJA

0.1 0.05 0.02 0.01 SINGLE PULSE

0.1

RJA = 135 C/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2

0.01

0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000

Figure 21. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.

FDS8958A Rev D(W)

SOIC-8 Tape and Reel Data

SOIC(8lds) Packaging Configuration: Figure 1.0
Packaging Description:
EL ECT ROST AT IC SEN SIT IVE DEVICES
DO NO T SHI P OR STO RE N EAR ST RO NG EL ECT ROST AT IC EL ECT RO M AGN ETI C, M AG NET IC O R R ADIO ACT IVE FI ELD S

TNR D ATE PT NUMB ER PEEL STREN GTH MIN ___ __ ____ __ ___gms MAX ___ ___ ___ ___ _ gms

Antistatic Cover Tape

ESD Label

SOIC-8 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 2,500 units per 13" or 330cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 500 units per 7" or 177cm diameter reel. This and some other options are further described in the Packaging Information table. These full reels are individually barcode labeled and placed inside a standard intermediate box (illustrated in figure 1.0) made of recyclable corrugated brown paper. One box contains two reels maximum. And these boxes are placed inside a barcode labeled shipping box which comes in different sizes depending on the number of parts shipped.

Static Dissipative Embossed Carrier Tape

F63TNR Label
Customized Label
F852 NDS 9959
F852 NDS 9959

F852 NDS 9959

F852 NDS 9959

F852 NDS 9959

SOIC (8lds) Packaging Information

Pin 1
D84Z
TNR
500

Packaging Option
Packaging type
Qty per Reel/Tube/Bag

Standard (no flow code) TNR

2,500

L86Z
Rail/Tube
95

F011
TNR
4,000

SOIC-8 Unit Orientation

Reel Size
Box Dimension (mm)
Max qty per Box
Weight per unit (gm)
Weight per Reel (kg)

13" Dia
343x64x343
5,000
0.0774
0.6060

530x130x83
30,000
0.0774
-

13" Dia
343x64x343
8,000
0.0774
0.9696

7" Dia
184x187x47
1,000
0.0774
0.1182

Note/Comments

343mm x 342mm x 64mm Standard Intermediate box ESD Label

F63TNR Label sample
LOT: CBVK741B019 FSID: FDS9953A QTY: 2500 SPEC:

F63TNLabel

F63TN Label
ESD Label
(F63TNR)3

D/C1: D9842 D/C2:

QTY1: QTY2:

SPEC REV: CPN: N/F: F

SOIC(8lds) Tape Leader and Trailer Configuration: Figure 2.0

Carrier Tape Cover Tape

Components Trailer Tape 640mm minimum or 80 empty pockets Leader Tape 1680mm minimum or 210 empty pockets

2000 Fairchild Semiconductor International

July 1999, Rev. B

SOIC-8 Tape and Reel Data, continued

SOIC(8lds) Embossed Carrier Tape Configuration: Figure 3.0
T E1

P0

D0

F K0 Wc B0 E2 W

Tc A0 P1 D1

User Direction of Feed

Dimensions are in millimeter Pkg type SOIC(8lds) (12mm)

A0
6.50 +/-0.10

B0
5.30 +/-0.10

W
12.0 +/-0.3

D0
1.55 +/-0.05

D1
1.60 +/-0.10

E1
1.75 +/-0.10

E2
10.25 min

F
5.50 +/-0.05

P1
8.0 +/-0.1

P0
4.0 +/-0.1

K0
2.1 +/-0.10

T
0.450 +/0.150

Wc
9.2 +/-0.3

Tc
0.06 +/-0.02

Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C).
20 deg maximum Typical component cavity center line

0.5mm maximum

B0 20 deg maximum component rotation

0.5mm maximum

Sketch A (Side or Front Sectional View)

Component Rotation

A0 Sketch B (Top View)

Typical component center line

Sketch C (Top View)

Component lateral movement

SOIC(8lds) Reel Configuration: Figure 4.0

Component Rotation

W1 Measured at Hub

Dim A Max

Dim A max

Dim N

See detail AA

7" Diameter Option

B Min Dim C See detail AA W3

Dim D min

13" Diameter Option

W2 max Measured at Hub DETAIL AA

Dimensions are in inches and millimeters

Tape Size
12mm

Reel Option
7" Dia

Dim A
7.00 177.8 13.00 330

Dim B
0.059 1.5 0.059 1.5

Dim C
512 +0.020/-0.008 13 +0.5/-0.2 512 +0.020/-0.008 13 +0.5/-0.2

Dim D
0.795 20.2 0.795 20.2

Dim N
2.165 55 7.00 178

Dim W1
0.488 +0.078/-0.000 12.4 +2/0 0.488 +0.078/-0.000 12.4 +2/0

Dim W2
0.724 18.4 0.724 18.4

Dim W3 (LSL-USL)
0.469 0.606 11.9 15.4 0.469 0.606 11.9 15.4

12mm

13" Dia

1998 Fairchild Semiconductor Corporation

July 1999, Rev. B

SOIC-8 Package Dimensions

SOIC-8 (FS PKG Code S1)

1:1
Scale 1:1 on letter size paper
Dimensions shown below are in: inches [millimeters]

Part Weight per unit (gram): 0.0774

2000 Fairchild Semiconductor International

September 1998, Rev. A

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Preliminary

First Production

No Identification Needed

Full Production

Obsolete

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This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. G