TPC8107

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)

TPC8107
Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications
Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 5.5 m (typ.) High forward transfer admittance: |Yfs| = 31 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 30 V) Enhancement-mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA) Unit: mm

Maximum Ratings (Ta = 25C)

Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) Channel temperature Storage temperature range Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating -30 -30 20 -13 -52 1.9 Unit V V V A

JEDEC JEITA TOSHIBA

2-6J1B

Drain power dissipation

1.0

Weight: 0.080 g (typ.)

219 -13 0.19 150 -55 to 150

mJ A mJ C C

Circuit Configuration
8 7 6 5

Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution.

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TPC8107
Thermal Characteristics
Characteristics Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Symbol Rth (ch-a) Max 65.8 Unit C/W

Thermal resistance, channel to ambient (t = 10 s) (Note 2b)

Rth (ch-a)

125

C/W

Marking (Note 5)

TPC8107

TYPE Lot No.

Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)

FR-4 25.4 25.4 0.8 (unit: mm)

FR-4 25.4 25.4 0.8 (unit: mm)

(a)

(b)

Note 3: VDD = -24 V, Tch = 25C (initial), L = 1.0 mH, RG = 25 W, IAR = -13 A Note 4: Repetitive rating; pulse width limited by maximum channel temperature Note 5: on lower left of the marking indicates Pin 1. Weekly code: (Three digits)

Week of manufacture (01 for first week of year, continues up to 52 or 53) Year of manufacture (One low-order digits of calendar year)

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TPC8107
Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain (miller) charge tf toff Qg Qgs1 Qgd Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton VGS -10 V 4.7 W 0V VDS = -10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = -30 V, VGS = 0 V ID = -10 mA, VGS = 0 V ID = -10 mA, VGS = 20 V VDS = -10 V, ID = -1 mA VGS = -4 V, ID = -6.5 A VGS = -10 V, ID = -6.5 A VDS = -10 V, ID = -6.5 A Min -30 -15 -0.8 15.5 Typ. 10 5.5 31 5880 1000 1050 11 22 110 395 130 10 30 Max 10 -10 -2.0 15 7.0 ns nC pF Unit mA mA V V mW S

ID = -6.5 A VOUT RL = 2.3 W

VDD ~ -15 V < 1%, tw = 10 ms Duty = VDD ~ -24 V, VGS = -10 V, ID = -13 A

Source-Drain Ratings and Characteristics (Ta = 25C)

Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition IDR = -13 A, VGS = 0 V Min Typ. Max -52 1.2 Unit A V

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TPC8107

ID VDS
-20 -10 -8 -6 -4 -2.8 -2.6 -3 Common source Ta = 25C Pulse test -50 -4 -3 -10 -8 -6

ID VDS
Common source Ta = 25C Pulse test

-16

-40

-2.8

(A)

(A)

-2.4 -12

ID

ID

-30

-2.6

Drain current

-8

-2.2

Drain current

-20

-2.4 -2.2 VGS = -2 V

-4

VGS = -2 V

-10

0 0

-0.2

-0.4

-0.6

-0.8

-1.0

0 0

-1

-2

-3

-4

-5

Drain-source voltage

VDS

(V)

Drain-source voltage

VDS

(V)

ID VGS
-50 Common source VDS = -10 V Pulse test -0.5

VDS VGS
Common source Ta = 25C Pulse test

-40

(V) VDS Drain-source voltage

-0.4

ID

(A)
-30

-0.3

Drain current

-20

-0.2

-10

25 100 Ta = -55C -2 -3 -4 -5

-0.1

-3 ID = -13 A -6.5

0 0

-1

0 0

-4

-8

-12

-16

-20

Gate-source voltage

VGS

(V)

Gate-source voltage

VGS

(V)

|Yfs| ID
(S)
100 25 30 Ta = -55C 100 10 100

RDS (ON) ID

Yfs

Drain-source ON resistance RDS (ON) (mW)

Forward transfer admittance

30 VGS = -4 V -10 3

10

1 Common source VDS = -10 V Pulse test -0.3 -1 -3 -10 -30 -100

1 Common source Ta = 25C Pulse test -0.3 -1 -3 -10 -30 -100

0.3 -0.1

0.3 -0.1

Drain current

ID

(A)

Drain current

ID

(A)

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TPC8107

RDS (ON) Ta
30 Common source Pulse test -100 -10

IDR VDS
-5 -3

Drain-source ON resistance RDS (ON) (mW)

Drain reverse current IDR

(A)
20 -10 ID = -13 A, -6.5 A, -3 A

-1 -1

VGS = 0 V

10

VGS = -4 V

-10 0 -80

ID = -13 A, -6.5 A, -3 A

-40

40

80

120

160

-0.1 0

Common source Ta = 25C Pulse test 0.2 0.4 0.6 0.8 1.0 1.2

Ambient temperature Ta (C)

Drain-source voltage

VDS

(V)

Capacitance VDS
10000 Ciss 3000 -2.0

Vth Ta
Common source VDS = -10 V ID = -1 mA Pulse test

Gate threshold voltage Vth (V)

-100

-1.6

(pF)

1000

Coss Crss

-1.2

Capacitance C

300 Common source 100 VGS = 0 V f = 1 MHz Ta = 25C 30 -0.1 -0.3 -1

-0.8

-0.4

-3

-10

-30

Drain-source voltage

VDS

(V)

0 -80

-40

40

80

120

160

Ambient temperature Ta (C)

PD Ta
2.0 (1)
(1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b)

Dynamic input/output characteristics

-30 Common source VDD = -24 V VDS -20 ID = -13 A Ta = 25C Pulse test -20 -30

(W)

(V)

1.6

PD

VDS

Drain power dissipation

Drain-source voltage

(2) 0.8

-12 -10 -6 VGS

-6 VDD = -24 V -12 -10

0.4

0 0

40

80

120

160

200

0 0

40

80

120

160

0 200

Ambient temperature Ta (C)

Total gate charge Qg (nC)

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Gate-source voltage

1.2

t = 10 s

VGS

(V)

TPC8107

rth - tw
1000
(1) Device mounted on a glass-epoxy board (a) (Note 2a) Device mounted on a glass-epoxy board (b) (Note 2b)

Normalized transient thermal impedance rth (C/W)

(2)

(2)

100

t = 10 s

(1)

10

Single pulse 0.1 0.001 0.01 0.1 1 10 100 1000

Pulse width

tw

(S)

Safe operating area

-100 ID max (pulse) * 1 ms*

(A)

-10

10 ms*

Drain current

ID
-1 -0.1

-0.01 -0.01

* Single pulse Ta = 25C Curves must be derated linearly with increase in temperature. -0.1 -1

VDSS max -10 -100

Drain-source voltage

VDS

(V)

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TPC8107

RESTRICTIONS ON PRODUCT USE

000707EAA

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc.. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customers own risk. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.

2003-02-20

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