ST 2N3905 / 2N3906

PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary types the NPN transistors ST 2N3903 and ST 2N3904 are recommended. On special request, these transistors can be manufactured in different pin configurations.

TO-92 Plastic Package Weight approx. 0.19g

Absolute Maximum Ratings (Ta = 25) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Peak Collector Current Power Dissipation Junction Temperature Storage Temperature Range
1)

Value 40 40 5 100 200 500

1)

Unit V V V mA mA mW
O O

-VCBO -VCEO -VEBO -IC -ICM Ptot Tj TS

150 -55 to +150

C C

Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case

G S P FORM A IS AVAILABLE

SEMTECH ELECTRONICS LTD.

(Subsidiary of Semtech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
R
Dated : 07/12/2002

ST 2N3905 / 2N3906
Characteristics at Tamb=25 OC Symbol DC Current Gain at-VCE=1V, -IC=0.1mA at- VCE=1V, -IC=1mA at- VCE=1V,-IC=10mA at- VCE=1V,- IC=50mA at- VCE=1V,- IC=100mA Collector Saturation Voltage at -IC=10mA,-IB=1mA at -IC=50mA, -IB=5mA Base Saturation Voltage at -IC=10mA, -IB=1mA at -IC=50mA, -IB=5mA Collector Cutoff Current at -VEB=3V, -VCE=30V Emitter Cutoff Current at -VEB=3V, -VCE=30V Collector Base Breakdown Voltage at -IC=10A, IE=0 Collector Emitter Breakdown Voltage at -IC=1mA, IB=0 Emitter Base Breakdown Voltage at -IE=10A, IC=0 Gain Bandwidth Product
at -VCE=20V,-IC=10mA,f=100MHz ST 2N3905

Min. 30 60 40 80 50 100 30 60 15 30 40 40 5 200 250 -

Typ. -

Max. 150 300 0.25 0.4 0.85 0.95 50 50 4.5 10 250

1)

Unit -

ST 2N3905 ST 2N3906 ST 2N3905 ST 2N3906 ST 2N3905 ST 2N3906 ST 2N3905 ST 2N3906 ST 2N3905 ST 2N3906

hFE hFE hFE hFE hFE hFE hFE hFE hFE hFE -VCEsat -VCEsat -VBEsat -VBEsat -ICEV -IEBV -V(BR)CBO -V(BR)CEO -V(BR)EBO fT fT CCBO CEBO RthA

V V V V nA nA V V V MHz MHz pF PF K/W

ST 2N3906 Collector Base Capacitance at -VCB=5V, f=100kHz Emitter Base Capacitance at -VEB=0.5V, f=100kHz Thermal Resistance Junction to Ambient
1)

Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case

G S P FORM A IS AVAILABLE

SEMTECH ELECTRONICS LTD.

(Subsidiary of Semtech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
R
Dated : 07/12/2002

ST 2N3905 / 2N3906
Capacitance
10 5000
VCC=40V I C/I B =10

Charge Data

Capacitance (pF)

5 Cibo

Q, Charge (pC)

Cobo

1000

QT

100 1 0.1 1 10 40 50

QA

1
TJ =25 C TJ =125 C

10

100

200

Reverse Bias (V) Turn-On Time

500
I C/I B =10

IC (mA) Fall Time

500
VCC=40V I B1 =I B2

100

Fall Time (ns)

100

Time (ns)

tr@VCC=3V

I C/I B =20 I C/I B =10

15V 40V

10
td@VOB=0V

2V

10 5

10

100

200

10

100

200

IC (mA)

IC (mA)

Noise Figure Variations

(VCE=-5V, Ta=25 C, Bandwidth=1Hz)

Noise Figure Variations

(VCE=-5V, Ta=25 C, Bandwidth=1Hz)

5
source resistance=200 Ic=1mA

12
f=1kHz Ic=1mA

4 3
source resistance=200 Ic=0.5mA

10
Ic=0.5mA

NF (dB)

NF (dB)

source resistance=200 Ic=50 A

6 4
Ic=50 A

2 1 0
source resistance=200 Ic=100 A

2 0 0.1 1 10

Ic=100 A

0.1

10

100

100

f (kHz)

Rg, source resistance (k OHMS)

SEMTECH ELECTRONICS LTD.

(Subsidiary of Semtech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
R
Dated : 07/12/2002

ST 2N3905 / 2N3906

h Parameters Current Gain

300

(VCE=-10V, Ta=25 C, f=1kHz)

Output Amittance
100

hoe, Output Admittance( mhos)

50

200

hFE

100

20

10

30 0.1 1

10

0.1

10

Ic (mA)

Ic (mA)

Input Impedance
hre, Voltage Feedback Ratio (x 10 -4 )
20 10 5

Voltage Feedback Ratio

hie, Input Impedance (k OHMS)

10

2 1

0.2 0.1

10

0.5 0.1

10

Ic (mA)

Ic (mA)

SEMTECH ELECTRONICS LTD.

(Subsidiary of Semtech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
R
Dated : 07/12/2002

ST 2N3905 / 2N3906

DC Current Gain
2 TJ=125 C 1
VCE=1V

hFE (Normalized)

25 C -55 C

0.2 0.1 0.1

10

100

200

I C (mA)

Collector Saturation Region

1
TJ =25 C

0.8
I C=1mA

30mA 100mA

0.6

VCE ( V )

0.4 0.2 0
10mA

0.001

0.1

10

I B (mA)

"On" Voltages
TJ =25 C VBE (sat)@I C/I B =10

Temperature Coefficients
Temperature Coefficients (mV/ C)
1 0.5 0
-55 C to 25 C
VC

1 0.8

for VCE(sat)

25 C to 125 C

VBE @VCE=1V

Voltage ( V )

0.6 0.4 0.2 0

VCE(sat)@I C/I B =10

-0.5
25 C to 125 C

-1
-55 C to 25 C

-1.5 -2

VB

for VBE(sat)

10

100

200

40

80

120

160

200

IC (mA)

IC (mA)

SEMTECH ELECTRONICS LTD.

(Subsidiary of Semtech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
R
Dated : 07/12/2002