Electronics 1 (EE312) SEMICONDUCTOR BASICS

ATOMIC STRUCTURE
Atomic Number The atomic number equal the number of protons in the nucleus. Valence Electrons Electrons that are in orbits farther from the nucleus known as the valence electrons. These valence electrons contribute to chemical reactions and bonding and determine its electrical properties. Ionization The process of losing a valence electron is known as ionization and the resulting positively charged atom is called a positive ion.
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SEMICONDUCTORS, CONDUCTORS, AND INSULATORS

Conductors A conductor is a material that easily conducts electrical current Insulators An insulator is a material that does not conduct electrical current Semiconductors A semiconductor is a material that is between conductors and insulators in its ability to conduct electrical current (silicon and Germanium) Energy Bands The difference in energy between the valence band and the conduction band is called an energy gap. This is the amount of energy that a valence electron must have in order to jump from the valence band to the conduction band.
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Energy Bands

Eg > 6 ev

Eg 1 ev

1 ev = 1.6 x 10-19 J
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COVALENT BONDS
When atoms combine to form a solid, crystalline material. they arrange themselves in a symmetrical pattern. The atoms within the crystal structure are held together by covalent bonds, which are created by the interaction of the valence electrons of the atoms.

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Conduction Electrons and Holes

An intrinsic (pure) silicon crystal at room temperature has sufficient heat (thermal) energy for some valence electrons to jump the gap from the valence band into the conduction band, becoming free electrons. When this happen, a vacancy is left in the valence band within the crystal. This vacancy is called a hole. Recombination occurs when a conduction-band electron loses energy and falls back into a hole in the valence band.

n = p = ni

ni = BT

3 / 2 E g / 2 kT

B = 7.3x1015 cm-3 K-3/2 Eg= 1.12 eV for silicon, K is Boltzmanns constant (8.62x10-5 eV/k)
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Example 1.1
Calculate the value of ni, for silicon at room temperature (T = 300 K). The formulas used to convert between temperatures are as follows: C = (F - 32) * 5 / 9 F = (C * 1.8) + 32 K = C + 273 C = K 273 Quiz: Calculate the intrinsic carrier density ni , for silicon at T= 223 c and 77 c. Ans. 9.6 x 10-39 /cm3 ; 4.15 x 1011 /cm3
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Doped Semiconductors
Doping Doping involves introducing impurity atoms into the silicon crystal in sufficient numbers to substantially increase the concentration of either free electrons or holes. N- Type Semiconductor By adding atoms with five valence electrons such as arsenic (As), phosphorus (P), bismuth (Bi), and antimony (Sb). It gives up an electron, it is often called a donor atom. The electrons are called the majority carriers in n-type material. Holes in an n-type material are called minority carriers If the concentration of donor atoms is ND where ND is usually much greater than ni the concentration of free electrons will be nn = ND ,

pn = ni2 / N D

Electronics 1 EE312, by Dr. Omar Aly

Doped Semiconductors
P-Type Semiconductor To increase the number of holes in intrinsic silicon, trivalent impurity atoms are added. These are atoms with three valence electrons such as boron (B), indium (In), and gallium (Ga). Because the trivalent atom can take an electron, it is often referred to as an acceptor atom. The holes are the majority carriers in p-type material. Electrons in p-type material are the minority carriers. If the acceptor doping concentration is NA, where NA >> ni ; the hole concentration becomes Pp = NA

n p = ni2 / N A
Electronics 1 EE312, by Dr. Omar Aly

Example 1.2
Consider an n-type silicon for which the dopant concentration ND = 1017 /cm3 Find the electron and hole concentrations at T = 300 K.

Quiz:
For a silicon crystal doped With boron, what must NA Be if at T = 300 K the electron concentration Drops below the intrinsic Level by a factor of 106
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THE DIODE
Formation of the Depletion Region The n region loses free electrons as they diffuse across the junction. This creates a layer of positive charges near the junction. The p region loses holes as the electrons and holes combine. This creates a layer of negative charges near the junction. These two layers of positive and negative charges form the depletion region. the depletion region acts as a barrier to the further movement of electrons across the junction. Barrier Potential It is the potential difference of the electric field across the depletion region is the amount of voltage required to move electrons through the electric field. Typical barrier potential is approximately 0.7 V11
Electronics 1 EE312, by Dr. Omar Aly

BIASING A DIODE
Forward Bias To bias a diode, you apply a de voltage across it. Forward bias is the condition that allows current through the pn junction. The bias voltage, VBlAS , must be greater than the barrier potential. The Effect of Forward Bias on the depletion Region The depletion region will narrow The Effect of the Barrier Potential During Forward Bias There is a voltage drop across the pn junction equal to the barrier potential (0.7 V). Is = saturation current
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BIASING A DIODE
Reverse Bias Reverse bias is the condition that essentially prevents current through the diode. The depletion region is shown much wider than in forward bias or equilibrium. Reverse Current is caused by the minority carriers in the n and p regions that are produced by thermally generated electron-hole pairs. Reverse Breakdown if the external reverse-bias voltage is increased to a value called the breakdown voltage, the reverse current will 13 drastically increase.
Electronics 1 EE312, by Dr. Omar Aly

VOLTAGE-CURRENT CHARACTERISTIC OF A DIODE

The Complete V-I Characteristic Curve

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DIODE MODELS
Diode Structure and Symbol The n region is called the cathode and the p region is called the anode.

Forward-Bias Connection

Reverse-Bias Connection

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The Ideal Diode Model

The ideal model of a diode is a simple switch. When the diode is forward-biased, it acts like a closed (on) switch. When the diode is reverse-biased. it acts like an open (off) switch.

The forward current is determined by the bias voltage and the limiting resistor using Ohm's law. VF = 0, IF = VBIAS / RLIMIT Electronics 1 EE312, by Dr. Omar Aly VR = VBIAS, IR = 0

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The Practical Diode Model

The practical model adds the barrier potential (0.7 V) to the ideal switch model.

VF = 0.7, IF = (VBIAS 0.7) / RLIMIT VR = VBIAS, IF = 0

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The Complete Diode Model

The complete model of a diode consists of the barrier potential, the small forward dynamic resistance (rd), and the large internal reverse resistance (rR).

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Example 1.3
(a) Determine the forward voltage and forward current for the diode in Figure (a) for each of the diode models. Also find the voltage across the limiting resistor in each case. Assume rd = 10 at the determined value of forward current. (b) Determine the reverse voltage and reverse current for the diode in Figure (b) for each of the diode models. Also find the voltage across the limiting resistor in each case. Assume IR =1 A.

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Problem
Floyed Chapter 1 16, 17 Sedraa Chapter 3 1, 2, 3, 4, 5, 12 (only built on voltage part),

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