1 MHz Cascaded Z-Source Inverters for Scalable Grid-Interactive Photovoltaic (PV) Applications Using GaN Device

Liming Liu, Hui Li

Florida State University Tallahassee, FL 32310, USA Liming@caps.fsu.edu, Hli@caps.fsu.edu

Yi Zhao, Xiangning He
Zhejiang University Hangzhou, Zhejiang 310058, China zhao.yi@foxmail.com, hxn@ee.zju.edu.cn

Z. John Shen
University of Center Florida Orlando, FL 32826, USA johnshen@ucf.edu

Abstract --This paper presents a scalable cascaded Z-source inverter for residential PV systems with high efficiency and high switching frequency. The commercial low voltage Gallium Nitride (GaN) device with low loss and high frequency is used to facilitate each Z-source inverter cell modular. The comprehensive Z-source network is designed based on the innovative equivalent AC circuit model. A detailed efficiency analysis is applied to a 3kW single phase grid-connected PV system with four cascaded Z-source inverter cells and 1MHz output frequency. The proposed topology also has the advantage to achieve independent maximum power point tracking (MPPT) control for each module and therefore improve the PV energy harvesting capability. Index Terms Cascaded Z-Source Inverter, Gallium Nitride (GaN) Device, Photovoltaic (PV) System, Z-Source Network Design

I.

INTRODUCTION

Current residential photovoltaic (PV) systems are typically constructed from ten to a few hundred seriesparallel connection PV modules connected to a common DC bus inverter [1-3]. One main reason that prevents the gridconnected PV systems from realizing its full market potential is the power losses due to the module mismatch, orientation mismatch, partial shading, and MPPT inefficiencies. The conventional single DC bus inverter and MPPT methods both can not solve the above issues due to multiple local peak power points [4-5]. The cascaded dc-dc converter topology, as shown in Fig.1, can achieve MPPT for each PV module, which reduces the above power loss [6-7]. However, the configuration has dc-dc and dc-ac conversion stages, which decreases the overall system efficiency. In addition, the switching frequency of dc-ac inverter is limited leading to the

big size filter and large electrolyte capacitors. Cascaded multilevel inverter topology, as shown in Fig.2, can achieve MPPT for each PV module, single stage energy conversion, as well support a higher equivalent PWM frequency and a larger DC bus voltage [8-9]. Nevertheless, the H-bridge inverter still lacks boost function so that the inverter KVA requirement has to be increased twice with a PV voltage range of 1:2. Moreover, the high switching losses at high switching frequencies still present a daunting challenge. This paper proposed a scalable cascaded Z-source inverter configuration for residential PV system as shown in Fig.3. The proposed PV system can achieve single energy conversion and boost function. The commercial low voltage GaN device can be used to facilitate the each Z-source inverter cell modular, which reduces losses significantly and achieves high efficiency [10]. The integrated Z-source network in each module is immune to shoot-through faults especially operating at high switching frequency and enhances the system reliability. Independent MPPT for each Z-source inverter module can implement an efficient PV energy conversion. In this paper, the PV system with equivalent 1MHz output frequency has been achieved due to advanced GaN devices and phase-shift PWM technology so the size and weight of line filter can be reduced significantly and good power quality can be maintained as well. From the capability of double fundamental frequency (DFF) power oscillation handling and high frequency ripple attenuation point of view, the comprehensive Z-source network design has been developed based on an innovative equivalent AC circuit model for the single phase PV system. The efficiency of each Z-source inverter module is analyzed. The effect of

Fig.1 Grid connected PV system with converters

Fig.2 Grid connected PV system with cascaded H-bridge inverters

Fig.3 Proposed PV system circuit configuration cascaded DC-DC with cascaded Z-source inverters

978-1-4577-0541-0/11/$26.00 2011 IEEE

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commercial devices selection for the proposed PV system and switching pattern on the efficiency has been discussed. Finally, the detail power loss derivation is provided. II. SYSTEM DESCRIPTION AND PARAMETERS SELECTION
Each Z-source inverter module (ZSIM)

The 3kW/240V single phase grid-connected PV system with four cascaded Z-source inverter modules (ZSIM) and 1MHz output frequency is developed as shown in Fig.4. The 200V/12A/25m GaN transistors recently introduced to the market by EPC Corporation are used in each ZSIM. Each ZSIM is a standardized open-frame power module with 750W. The input voltage of each PV module varies between 60V and 120V under different solar irradiation levels. In order to generate 1 MHz operation frequency at output terminals, the switching frequency of each ZSIM is 125 kHz due to phase-shift PWM modulation method. The dc voltage after Z-source network is controlled to 135V during nonshoot-through period. There are two shoot-through states per switching cycle as shown in Fig.5. Ts is the switching cycle and Tst is the shoot-through period. The peak carrier voltage is Vtri. In the most challenge case, PV module is controlled to generate the full power 750W under lowest PV voltage Vpv_low. The peak value of each ZSIM output voltage Vpeak is equal to the shoot-through command line Bline. The dc voltage after Zsource network can be calculated by:
ipv1 Vpv1
PV Module D Z-source LZL CZC CZC LZL D Z-source LZL CZC CZC 5.6A 200V GaN S2 S4

TABLE I: SYSTEM CIRCUIT PARAMETERS Parameters Symbol Value Vdc1, Vdc2 DC link voltage 135V Vdc3, Vdc4 VPV1, VPV2 PV Voltage 60-120V VPV3, VPV4 Pin1, Pin2 Full PV power 750W Pin3, Pin4 Switching frequency Z-source inductor Z-source capacitor Input capacitor Cascaded inverter number Filter Inductor fSW LZL CZC Cin n Lf Vg 125kHz 18H 2500F 25F 4 100H 240V

Grid

Rated RMS phase voltage

Vdc = 2V peak V pv _ low

(1)

Module 1 iL1 v1 Lf /2 STS PCC ig

where Vpeak is selected to 97.5V considering the possible maximum output voltage of ZSIM, Vpv_low is 60V. The system circuit parameters are shown in Table. I. The detailed Zsource network design is introduced in the following section. The PV system is able to operate in stand-alone mode and grid-connected mode through a static transfer switch (STS) according to the system requirement. III. Z-SOURCE NETWORK DESIGN A. Z-source inductor design The Z-source network design is critical for the system efficiency evaluation. The Z-source inductors are useful for reducing current ripple, as well Z-source capacitors and input capacitor can handle voltage ripple. The maximum current through the inductor occurs during maximum shoot-through duty cycle, which causes maximum ripple current. In the design, 40% current ripple through the inductors during maximum power operation is chosen. Based on Fig.5, the inductance can be calculated by: VZC (1 M ) (2) LZL = 2 f sw I ZL where VZC =(Vdc+Vpv_low)/2 is the Z-source capacitor voltage, Vdc is the dc voltage after Z-source network, M=Vpeak/Vtri is modulation index, Vtri is the carrier peak value, fsw is switching frequency, IZL is the allowed maximum Z-source inductor current ripple. B. Input capacitor design For the single phase inverter system, the instantaneous output power includes dc component and DFF components. The peak to peak value of the DFF power is twice dc power, which is PV power. From the energy conservation point of view, the DFF power should be absorbed by the input capacitor and Z-source capacitors, which causes DFF voltage ripple. Since the Z-source capacitor voltage VZC is much greater than input capacitor voltage Vpv, Z-source capacitors should be used to deal with the DFF power. Otherwise, the

Cin

60~120V

Vdc1 S1
135V S3 5.6A

750W ipv2 Vpv2

PV Module

200V GaN S6

Module 2

Vdc2 S5
135V S7 5.6A

Cin

60~120V

v2
S8

LZL D Z-source LZL CZC CZC

240V vs Local v Load g

750W ipv3 Vpv3

PV Module

200V GaN S10

Module 3

Vdc3 S9
135V S11

Cin

60~120V

v3
S12

LZL D Z-source LZL CZC CZC

750W ipv4 Vpv4

PV Module

5.6A

200V GaN S14 S16

Module 4 v4 Lf /2

Vdc4 S13
135V S15

Cin

60~120V

LZL

750W

Fig.4 Proposed PV system with four cascaded Z-source inverter modules at 3kW

Vtri

Fig.5 Z-source inverter modulation with maximum shoot-through duty ratio

Vpeak

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(a)

(b) (c) Fig.6 Z-source inverter operation mode: (a) shoot-through state; (b) traditional zero state; (c) active state

total capacitance will increase which resulting in low power density. In addition, input capacitor with big capacitance will cause the phase-shift between VZC and Vpv due to the equivalent LC filter on DC side, which will increase the burden of total capacitors to handle the DFF power. According to the above analysis, the input capacitor is used for handling most high frequency voltage ripple. The maximum high frequency voltage ripple occurs during shootthrough period and PV module only delivers power to input capacitor. In order to achieve good voltage performance, high frequency voltage ripple is limited with 1%. The capacitance can be determined by: Pmax (1 M ) Pmax (1 M ) Cin = = (3) 2 2 f swV pv _ low V pv _ hf 2 f swV pv _ low 1%

di ZL = Dnst V pv ( Dnst Dst )V ZC LZL dt dV pv 1 = i pv 2 Dnst i ZL MI g cos 2t Cin 2 dt 1 dV ZC = ( Dnst Dst ) i ZL + MI g cos 2t CZC 2 dt
Dnst di ZL LZL D D V pv = V ZC + D D dt nst st st nsht Dst Cin 1 Dnst Dst D D D i pv D D i ZL D D nst st st st nst nst nst 1 1 = 2i ZL MI g cos2t + Dst i ZL Dnst 2 C dV ZC 1 1 ZC = i ZL D 2 MI g cos2t + Dst i ZL Dnst dt nst

(5)

dV pv dt (6)

where Vpv_hf is the allowed maximum input capacitor high frequency voltage ripple, Pmax is 750W. C. Z-source capacitor design The Z-source capacitor is used to handle the DFF voltage ripple and partly high frequency voltage ripple. In order to obtain suitable Z-source capacitance, the Z-source inverter operation mode is firstly analyzed in three different operation modes as shown in Fig.6. The relationship between voltage, current and operation mode can be expressed by:
VZL i cin iZC diZL = DstVZC + D0 V pv VZC + D1 V pv VZC dt = DnstV pv ( Dnst Dst )VZC = LZL

where Dnst = M

and

Dst = 1 M

in

the

worst

case;

1 M is = I g cos 2t . 2 Dnst

) )
(4)

According to (6) and Fig.6, the equivalent AC circuit model is developed as shown in Fig.7. Due to the DFF current ripple is absorbed by Z-source network, AC component of PV current can be ignored. Therefore, one can obtain the relationship of current and voltage as follows:
1 M iZL + iCin + iZC + iZL = 0 M 1 M iZL iZC is iZL = 0 M i Z ' = i Z ' + i Z ' Cin Cin ZL ZL ZC ZC
V ZL
i cin
i ZL

= Cin

= Dst i pv + D0 i pv 2iZL + D1 i pv 2iZL + iLf dt = i pv 2 Dnst iZL + MI g sin 2 t dVZC = Dst iZL + D0iZL + D1 iZL iLf dt = ( Dnst Dst ) iZL MI g sin 2 t = CZC

dV pv

(7)

where Dst is the shoot-through duty ratio; Dnst = D0+ D1 is the non-shoot-through duty ratio; D0 is tradition zero duty ratio; D1=Msint is active state duty ratio; iLf= Igsint is the AC filter current; =260 (rad/s); Ig is the peak value of the grid current. Among AC and DC components included in (4), AC components are useful for the Z-source capacitors design. They can be extracted from (5) and then converted as (6):

LZL D D nst st

is

1 i pv D nst

D st i ZL D nst

Dnst V Dnst Dst PV D D nst st C in D2 nst

V ZC

C ZC D nst
i ZC

Dst i Dnst ZL

Fig.7 The equivalent AC circuit model of Z-source inverter

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After getting the current iCin , iZC and iZL , the peak-peak voltage ripple on input capacitor Vpv, Z-source capacitor VZC and DC link after Z-source network Vdc can be calculated by (8).
1 ' ' ' Z ZL M Z ZC Z Cin 2M 1 ' ' ' 2 Z Cin + Z ZL + M Z ZC 1 ' ' ' V pv Z ZL M Z Cin Z ZC Ig VZC = 2M 1 ' ' ' Vdc 2 Z Cin + Z ZL + Z ZC M 1 ' ' ' ' ' ' Z Cin Z ZC Z ZL Z Cin 2 Z ZL Z ZC M 2 Z ' + Z ' + 2M 1 Z ' Cin ZL M ZC

V pv

VZC

(8)

Vdc
CZC (F)
Fig. 8 The relationship between voltages ripples Vpv, VZC, Vdc and CZC

where

2M 1 ' Z Cin = 1/ ' Cin 2 M

1 ' Z ZC = 1/ ' CZC M

1 ' Z ZL = 1/ ' LZL ; ' = 2 120 . 2M 1

Based on (2), (3) and (8), the relationship between voltages ripples Vpv, VZC, Vdc and CZC can be obtained in the Fig.8. It can be seen from Fig.8 that the Vpv is highest. In order to achieve good voltage performance and power density, Vpv is limited with 5%. Fig.9 shows the relationship among Cin, CZC and Vpv. It is obvious that Zsource capacitors can handle the DFF voltage ripple better than input capacitor. IV. EFFICIENCY ANALYSIS The commercial devices selection and switching pattern are both critical for the ZSIM efficiency. The detail Z-source network parameters and commercial device selection for each module in Fig.4 are designed in Table II. Considering the actual operation current, each device includes two 200V GaN devices in parallel. In order to reduce the size of Z-source network and effectively handle the DFF and high frequency ripple, two hybrid capacitors are series and then paralleled with one ceramic capacitor, which composes one Z-source capacitor CZC. The hybrid capacitors are used to handle DFF power oscillation and the ceramic capacitor deals with high frequency ripple. By this way, the efficiency of Z-source
Device Switching Device Cell Hybrid Capacitor CZC Ceramic Capacitor Cin LZL D Ceramic Capacitor Ferrite Inductor Schottky Diode

Cin (F)

C ZC

) (F

Fig.9 Input capacitor voltage ripple with different input capacitance Cin and Z-source capacitor CZC

network can be improved. The switching losses and conduction losses of the active switches are relative to the switching pattern. In this efficiency analysis, unipolar & frequency multiplication method is applied. The following power loss analysis focuses on Module1 in Fig.4. A. GaN devices power loss As mentioned above, each ZSIM includes eight GaN devices. The power loss of GaN devices includes mainly switching loss and conduction loss. The instantaneous currents on Z-source inductor and AC inductor filter will

TABLE II: Z-SOURCE NETWORK PARAMETERS AND COMMERCIAL DEVICE Parameters GaN EVANS THRQ5 GaN AMC_201P02W256KJ4C AMC_201P02W256KJ4C EI30 On Semi MBRF20200CT N/A 7500F 25 F 25 F 18H N/A Vds=200V Vc=100V@85C, Vc=60V@125 C Vc=200V Vc=200V N/A Vrrm=200V Ic=12A Iripple=6A@tr=30 C Iripple=10A Iripple=10A Irms=13A IF=20A Rdson=25m Resr_hy=35m Resr_ce=5m Resr_ce=5m Ron=5.2m VF=0.8V

S1~S4

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TABLE III: GAN DEVICES SWITCHING PATTERN IN ONE SWITCHING CYCLE Switch S1 S2 S3 S4 State Period (D1) (D2) (D3) (D4) on off off on Active t0-t1 Traditional on on off off t1-t2 (D2) zero on on on off Shoot-through t2-t3 Traditional on on off off t3-t4 zero off on off on Active t4-t5 (D2) on off off on Active t5-t6 Traditional on off off on t6-t7 (D3) zero off on on on Shoot-through t7-t8 Traditional off off on on t8-t9 zero off on off on Active t9-t10 (D3) Switching 1 1 1 1 times(on/off) Switching on-off ILf(n) 2 IZL(n) 2 IZL(n) ILf(n) Transient current

where Vdc is the dc link voltage 135V of inverter as shown in Fig.4. The shoot-through period can be obtained in (11): 1 V pv _ low (12) Tst = 1 Ts Vdc 2 where Vpv_low is 60V, Vdc is 135V and Ts is 8s. In one switching cycle, the total input charge Qin should be equal to the total output charge Qout. As shown in Fig.6, the total input charge can be expressed as: Qin = I pvTs (13)

where I pv = Pmax V pv _ low is 12.5A in the most challenge case. During shoot-through state and traditional zero state, ILf (n) is zero. So the total charge on the dc side of inverter can be given by: QLf = I Lf (n) D (n)Ts ( n = 1, 2, , N s ) (14) The total charge on the Z-source inductor can be written as: QZL = I ZL (n) (Ts Tst ) ( n = 1, 2, , N s ) (15) where IZL (n) is the instantaneous current through Z-source inductor. Based on (12)-(14) and ignoring the charge on input capacitor Cin, the relationship between Qin and Qout can be expressed as: Qin = 2QZL QLf (16) Accordingly, IZL (n) can be calculated by: I Lf (n) D ( n ) Ts + I pvTs I ZL ( n ) = ( n = 1, 2, , N s ) (17) 2 (Ts Tst )

dominate the power loss, which can be derived as follows. The instantaneous equivalent grid voltage for each ZSIM in half of fundamental cycle can be expressed as: n (9) Vg (n) = Vg _ peak sin ( n = 1, 2, , N s ) Ns where Vg_peak is the peak value of the equivalent grid voltage, that is 60 2 V. Ns is the number of switching frequency in half of fundamental frequency N s =
fs 2 fg
1040 .

The instantaneous current through AC filter inductor in half of fundamental cycle can be given by: n (10) I Lf (n) = I Lf _ peak sin ( n = 1, 2, , N s ) Ns where ILf_peak is the peak value of the AC filter inductor current, that is iLf _ peak =
750 2 A. 60

The duty cycle can be determined as: Vg (n) D ( n) = ( n = 1, 2, , N s ) Vdc

In view of Bline and v1 as shown in Fig.5, as well as the unipolar & frequency multiplication method application, the switching pattern in one switching cycle is addressed in Table III and Fig.10. The GaN devices S1-S4 turn on and off only once in one switching cycle, respectively. Due to the freewheeling diode (D2 and D3), the soft-switching can be achieved at t2 and t3 for S2, and t7 and t8 for S3. In these transient processes, the switching loss for S2 and S3 can be ignored. The switch-on and switch-off instantaneous currents for S1-S4 are ILf(n), 2IZL(n), 2IZL(n), ILf(n), respectively. So the turn-on energy loss for each ZSIM in half of fundamental cycle can be calculated as:
s tri + tfu tri + tfu Esw _ on = 2iVdc i I Lf (n)i + 2iVdc i2i I ZL (n)i (18) 2 2 n =1 N

(11)

(a) (b) (c) (d) (e) Fig.10 Switching patterns under different operation modes in half of switching cycle: (a) active state (t0-t1); (b) traditional zero state (t1-t2); (c) shoot-through state (t2-t3); (d) traditional zero state (t3-t4); (e) shoot-through state (t4-t5)

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where tri is the current rise time, tfu is the voltage fall time. The calculation of tri and tfu can refer to [11]. The turn-off energy loss for each ZSIM in half of fundamental cycle can be derived by:
s tru + tfi tru + tfi Esw _ off = 2iVdc i I Lf (n)i + 2iVdc i2i I ZL (n)i (19) 2 2 n =1 where tru is the voltage rise time, tfi is the current fall time. The calculation of tru and tfi can also refer to [11]. Consequently, the switching loss for GaN devices can be expressed as: Psw = 120i Esw _ on + Esw _ off (20) N

Econ = [ Econ1 + Econ 2 + Econ3 + Econ 4 ]

n =1

Ns

(25)

As mentioned above, each device includes two 200V GaN devices in parallel. So the above conduction energy loss will be halved. Therefore, the GaN device conduction loss can be derived by: E Pcon = 120i con (26) 2 B. Input diode power loss The input diode power loss consists of switching loss and conduction loss. However, the switching loss is very small and can be ignored. The average current on diode is equal to Ipv. So the conduction loss of input diode can be obtained by: Pdcon = VF I pv (27) where VF is the forward voltage drop of the diode. C. Z-source inductor power loss The Z-source inductor power loss is composed of core loss and winding loss as follows: PZL = Pcore + Pcop = kbVe + Ron I 2 (28)
ZL _ rms

The conduction losses in GaN devices can be calculated using a GaN approximation with the drain-source on-state resistance (Rdson) and instantaneous current on GaN devices. Fig.10 shows the instantaneous current on S1-S4 under three operation modes from t0-t5.In the active state in (a), S1 and S4 turn on simultaneously. The instantaneous current is ILf(n). In the traditional zero state in (b), S1 and S2 turn on simultaneously. The soft turn-on for S2 can be achieved due to the free-wheeling diode D2. The instantaneous current is ILf(n). In the shoot-through state shown in (c), the S1 and S3 switch on at the same time, and S2 is still on. In this case, the current on S1 is ILf(n)+2IZL(n). The currents through S3 and S2 are 2IZL(n) and ILf(n), respectively. In the traditional zero state in (d), S1 and S2 turn on simultaneously. The instantaneous current is ILf(n). In the active state in (e), S1 and S4 turn on simultaneously. The soft turn-off for S2 can be achieved due to the free-wheeling diode D2. The instantaneous current is ILf(n). Therefore, the equivalent conduction loss for S1 in half of switching cycle can be given by: 2 T T T 2 Econ1 = s st I Lf (n) Rdson + st I Lf (n) + 2i I ZL (n) Rdson (21) 2 2 2 The equivalent conduction loss for S2 in half of switching cycle can be expressed as: T 2 (22) Econ 2 = st + TZ I Lf (n) Rdson 2 where Tz is the traditional zero period in half of switching cycle. The equivalent conduction loss for S3 in half of switching cycle can be calculated as: T 2 (23) Econ 3 = st [ 2i I ZL (n)] Rdson 2 The equivalent conduction loss for S4 in half of switching cycle can be written as: T T 2 (24) Econ 4 = s st TZ I Lf (n) Rdson 2 2 Accordingly, the conduction energy loss for each ZSIM in half of fundamental cycle can be derived by:

where kb is the loss coefficient, Ve is the volume of the core shown in Table II. Ron is the resistance of the winding. IZL_rms is the root mean square (RMS) value of the Z-source inductor current, which can be obtained by (29):
2 I ZL _ rms = 120i I ZL ( n )iTs n =1 Ns

(29)

D. Z-source capacitor power loss Aforementioned, each Z-source capacitor consists of two series hybrid capacitors and one paralleled ceramic capacitor. The hybrid capacitors mostly contribute to handle DFF power oscillation and the ceramic capacitor is used to deal with high frequency ripple. Therefore, the Z-source capacitor power loss is composed of power loss on hybrid capacitor and power loss on ceramic capacitor. As illustrated in Fig.6, the Z-source capacitor instantaneous current in shoot-through state is IZL(n). In the traditional zero state, the current is -IZL(n). In the active state, the current is ILf(n)-IZL(n). In order to investigate the Z-source capacitor power loss, the average current of Z-source capacitor in one switching cycle is derived primarily by: Tst ( I ZL ( n ) )i1 D ( n ) Ts (30) I ZC _ avg ( n ) = Tst + I Lf ( n ) I ZL ( n ) i D ( n ) + I ZL ( n )i Ts The RMS value of Z-source capacitor current can be calculated as:

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2 I ZL ( n )i(1 D ( n ) )iTs + (31) I ZC _ rms = 120i 2 n =1 I I ZL ( n ) i D ( n )iTs Lf The above IZC_rms is separated into two parts: the RMS values of Z-source capacitor current at 120Hz and other high frequency. The RMS value of Z-source capacitor current at 120Hz is given by: Ns

Device GaN Diode Z-source Inductor Z-source Capacitor Input Capacitor

TABLE IV: POWER LOSS FOR EACH ZSIM Num Power Loss ber Switching loss 7.649W 8 Conduction loss 10.589W Switching loss 0W 1 Conduction loss 10W Core loss 0.772W 2 Copper loss 1.704W 2 1 Total ESR loss ESR loss 2.25W 0.324W 33.288W

Percentage 23.0% 31.9% 0 30.1% 2.3% 5.2% 6.8% 0.7% 54.9% 30.1% 7.5% 6.8% 0.7%

I ZC _ rms _120 = 120i I

n =1

Ns

2 ZC _ avg

( n )iTs

(32)

So the RMS value of Z-source capacitor current at other high frequency is obtained by:
2 2 I ZC _ rms _ hf = I ZC _ rms I ZC _ rms _120

Efficiency=(75033.288)/750=95. 56%

(33)

As shown in Table II, the equivalent impedance of two series hybrid capacitors is calculated as: 1 (34) Z hy = 2i Resr _ hy + j 2i i2i f sw i2iChy where Resr_hy is the equivalent series resistor (ESR) of the hybrid capacitor, fsw is the switching frequency, Chy is the capacitance of hybrid capacitor. The equivalent impedance of the ceramic capacitors is calculated as: 1 Z ce = Resr _ ce + (35) j 2i i2i f sw iCce where Resr_ce is the ESR of the ceramic capacitor, Cce is the capacitance of ceramic capacitor. So the power loss on hybrid capacitors is expressed as; 2 Z ce i Resr _ hy Phy = i I ZC _ rms _ hf + I 2 (36) ZC _ rms _120 Z hy + Z ce The power loss on hybrid capacitors is given by;
Z hy (37) Pce = iI iR Z hy + Z ce ZC _ rms _ hf esr _ hy The total power loss on Z-source capacitor is presented as: PZC = Phy + Pce (38)
2

E. Input capacitor power loss The input capacitor power loss is related to the mean value of input capacitor current and ESR. The input capacitor is used to handle high frequency ripple, so the ceramic capacitor is selected as shown in Table II. As described in Fig.6, the input capacitor instantaneous current in shootthrough state is Ipv. In the traditional zero state, the current is Ipv-2IZL(n). In the active state, the current is Ipv+ ILf(n)-2IZL(n). Accordingly, the RMS value of input capacitor current can be expressed as:

I 2 ( n )iT + pv st Ns I 2i I n 2 i T T i D n T (39) Icin _ rms = 120i pv ( s s ( ) st ) ZL ( ) n =1 2 + I pv + I Lf ( n) 2i I ZL ( n) i(Ts i D ( n ) ) The power loss of input capacitor can be calculated as: Pcin = I cin _ rms i Resr _ ce (40) where Resr_ce is the ESR of the input capacitor. According to the above analysis, the total power loss includes the switching and conduction loss of GaN devices, input diode loss, the inductors and capacitors loss on Zsource network, and the input capacitor loss as shown in Table IV. The power loss of each 750 W module is calculated around 33.2 watts so the efficiency is around 95%. Fig.10

Fig.10 Power loss distribution chart

Fig.11 Efficiency curves of ZSIM using diode and SR

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shows the power loss distribution. Since the proposed topology allows each module to switch at only a fraction of the 1 MHz system frequency, distribution of power losses to a larger number of power devices leading to high efficiency at 1 MHz and air cooling becomes achievable. This architecture is particularly suitable for PV system where distributed PV module can be monitored, controlled, maintained, or replaced if necessary. If synchronous rectifier (SR) replaces the diode to be in series with PV module, the efficiency of each z-source inverter module can be increased from 95% to 96%, shown in Fig.11. V. CONCLUSION In this paper, a scalable cascaded Z-source inverter for residential PV system with 1MHz frequency output has been presented. The high switching frequency and high efficiency of modular Z-source inverter cell has been achieved based on the advanced GaN device, phase-shift PWM technology, and innovative Z-source network design. In addition, the energy harvesting capability of the PV system can be improved due to the independent MPPT control can be realized for each module using the proposed topology. The comprehensive Zsource network design is developed and the detail power loss derivation is explored to evaluate the system efficiency in this paper. REFERENCES
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[11] Dusan Graovac, Marco Purschel, Andreas Kiep, MOSFET Power Losses Calculation Using the Data-Sheet Parameters, Automotive Power, Application Note, vol. 1.1, July 2006

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