Multigate device

Introduction:
A multigate device or multiple gate field-effect transistor (MuGFET) refers to a MOSFET which incorporates more than one gate into a single device. The multiple gates may be controlled by a single gate electrode, wherein the multiple gate surfaces act electrically as a single gate, or by independent gate electrodes. The independent one is called Multiple Independent Gate Field Effect Transistor (MIGFET).

developed by CMOS semiconductor manufacturers to create ever-smaller microprocessors and memory cells

Unlike planar transistors, In a multigate device, the channel is surrounded by several gates on multiple surfaces, allowing more effective suppression of "off-state" leakage current. Multiple gates also allow enhanced current in the "on" state, also known as drive current.hence these properties leads to lower power consumption. (as the size of planar device decreases its offstate leakage current increases, thereby increasing the power consumption)

Types
These are differentiated based on architecture(planar/nonplanar) and number of gates Planar double-gate transistors Flexfet FinFETs Tri-gate transistors

Here Ill deal with the basic funda of finFet and tri gate transistor

Trigate transistor:Its a nonplanar transistor.It was developed by intel corporation for adoption of it in future microprocessors. It consists of a single gate stacked on top of 2 vertical gates allowing essentially 3 times the surface area for electrons to flow. Intel was the first company to announce this technology in September 2002

Construction:
Built on ultrathin layer of fully depleted. Raised source and drain structure. Compatible to future introduction of high-k gate dielectric. Thickness requirements of silicon reduced by 2 to 3 times.

Intel explains the working of this device The additional control enables as much transistor current flowing as possible when the transistor is in the 'on' state (for performance), and as close to zero as possible when it is in the 'off' state (to minimize power), and enables the transistor to switch very quickly between the two states (again, for performance)."

Advantages:
Lower leakage and less power Faster and cooler operation 45% increase in on/off speed The basic building blocks of future microprocessor

Applications :

Critical part of Intels Energy efficient performance Scaling of silicon transistors Increase battery life of mobile devices

FinFETs:
Finfet consists of a vertical Si fin controlled by self-aligned double gate. Main Features of Finfet are 1) Ultra-thin Si fin for suppression of short channel effects 2) Raised source/drain to reduce parasitic resistance and improve current drive 3) Gate last process with low, high gate dielectrics 4) Symmetric gates yield great performance, but can built asymmetric gates that target V T