WMC: Challenges in Model-Based HPA Design

Application of Non-Linear Models in a range of challenging GaN HEMT Power Amplifier Designs
Ray Pengelly, Brad Millon, Don Farrell, Bill Pribble and Simon Wood Cree Inc., Research Triangle Park, NC 27709

Outline
Attributes of GaN HEMTs Cree GaN HEMT Models Design Examples Broadband CW Amplifiers Linear WiMAX Amplifier Future Model Improvements Conclusions

Attributes of GaN HEMTs

High Voltage Operation High power densities 4 to 8 watts/mm at 28 and 50 volt operation respectively High Frequency Performance present Cree process has fT of 25 GHz gap High Efficiency and eB Low Quiescent Current Wid High Native Linearity Low capacitance per peak watt (12% of LDMOS and 21% of GaAs MESFET) supports broad bandwidths Enable new amplifier architectures Highly correctable under DPD Almost constant CDS as a function of VDS great for Drain Modulation

Models for GaN HEMTs

Equivalent-circuit based approach Relatively simple extraction Process sensitive based on individual elements Simple implementation using commercial harmonic balance simulators Significant historical information for model basis and validation Non-linearity introduced as required by element Drain current source is dominant non-linearity Gate current formulation includes breakdown and forward conduction Voltage variations of parasitic capacitances derived from charge formulations Model data fit extends over drive, frequency, bias, and temperature Many hundreds of successful hybrid and MMIC designs

Model Schematic
R R3 R=0.01 Ohm SDD6P SDD6P1 I[1,0]=(vg)/5e8 I[2,0]=id1 I[3,0]=(_v3)*gdsc I[4,0]=(_v4)*gmc I[5,0]=-vd*idt I[6,0]=(vdf)/5e4 C[1]= Cport[1]= vg1 pncap3 X12 sc=sc scf=scf cg1=cgs pF cg2=cg2 cg3=cg3 vgg0=vgg0 V R R1 R=(ri/(sc*scf)) Ohm pncap3 X15 sc=sc scf=scf cg1=cgd pF cg2=0.6 cg3=0.1 vgg0=-21 V

Drain current
SRL SRL4 R=(rd/(sc*scf)) Ohm L=(ld/sc+ld1/(sc*scf)) nH

SRL SRL1 R=(rg/sc+rg1/(sc*scf)) Ohm L=(lg/sc+lg1/(scf*sc)) nH

Port P1 Num=1

C C7 C=1.0 uF C C9 C=(cds*sc*scf) pF

R R5 R=1e6 Ohm

VCVS SRC1 G=1 Port P4 Num=4 Port P5 Num=5

R R6 R=1e6 Ohm

Port P2 Num=2

vd1g

Thermal resistance
R R2 R=rth Ohm C C8 C=30.0 nF Port P8 Num=8

SRL SRL3 R=(rs/(sc*scf)) Ohm L=(ls/sc) nH

Based on 13-element MESFET model (H. Kondoh 1986 MTT-S) ADS version shown using non-linear equation-based elements Easily changed during design process Speed comparable to C-coded version AWR version uses C code with model wizard

More details on GaN HEMT Model

Most FET models implement a gate current-control characteristic that transitions from the sub-threshold Quad Linear Compression region to the linear gate control Sub region directly, without treating the Threshold intermediate region, called the Ids, mA gm and Ids Gm, mS 500 quadratic region. Fager et al. implemented an equation and new parameters to fit the quadratic region. This leads to better 250 agreement with measured IMD and other nonlinear characteristics. Gate charge is partitioned into gate- 0 -4 -3 -2 -1 0 0.5 Gate voltage, volts source and gate-drain charge. Each charge expression is a function of Blue is DC transconductance both VDS and VGS. Using charge Red is drain current partitioning, it is possible to fit most GaN HEMT capacitance functions and observed charge conservation.
30 25 20 15 10
|S(2,1)|[1,X] (L) Schematic 1

4000 3333 2667 2000 1333 666.7 0

5 0

IDC(I_METER.AMP1) (R, mA) Schematic 1

p1: Freq = 0.05 GHz

p1

-15

-10

-5 Voltage (V)

More details on GaN HEMT Model

The model includes new capacitance functions as well as modeling of the drain-source breakdown and self heating. The model has four ports, with the extra port providing a measure of the temperature rise. The voltage between the external thermal circuit port and the source node is numerically equal to the junction temperature rise in degrees C. This occurs because the current source in the thermal circuit is numerically equal to the instantaneous power dissipated in the FET and the resistance, R_TH is numerically equal to the thermal resistance. The RC product of the thermal circuit is the thermal time constant. The model addresses the sharp turn-on knee in GaN HEMTs leading to the accurate prediction of IMD sweet spots in Class A/B operation.

Drain Current Model

0.15

0.5

permute(Is_high.i)
-4 -3 -2 -1 0 1 2

0.10

0.4 0.3 0.2 0.1 0.0 0 5 10 15 20 25 30 35 40 45

gm
0.05 0.00

Vlow

Vhigh

Transconductance curve fit to Gm from small-signal model fits over bias range Output conductance dispersion model Peak current and knee voltage fit from load-pull - includes trap effects Pinch-off fit from DC IV-characteristics gives model of drain current IV function similar to Fager-Statz formulation good model of pinch-off needed to accurately predict intermodulation distortion

Temperature Dependence Self-heating

36.5 output power 36 35.5 35 34.5 34 0 50 100 chuck temp 150 200

1mm gate width

Drain current is only temperature dependent model element Drain current scales to provide -0.1 dB/10oC reduction in power for current-limited load-line Self-heating included using a thermal resistance calculated from finite element analysis of die and package. Thermal performance due to package needs to be included where appropriate

Feedback Capacitance - CGD

Feedback Capacitance Cgd (pF)
0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 0 10 20 30 40 50 60

Drain Voltage

Feedback capacitance is a strong function of drain voltage Inclusion of this effect necessary to fit small-signal data Non-linearity changes harmonic generation from the model effects efficiency and linearity predictions Output Capacitance CDS is linear no voltage dependence (weak anyway)

Input Capacitance - CGS

Input Capacitance Cgs (pF)
1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -3.5 -3 -2.5 -2 -1.5 -1 -0.5 0

Gate Voltage (V)

Input capacitance is a strong function of gate voltage CGS is also a function of drain voltage, but this non-linearity is not included at present The gate-voltage non-linearity also effects models harmonic generation

GaN HEMT Model - Small-Signal

measured
30

model

25

Measured Gmax Model Gmax

bg ag

20

15

10 1E9 1E10 2E10

freq, Hz

a(2,2) b(2,2) b(1,1) a(1,1)

freq (1.000GHz to 14.00GHz)

On-wafer S-parameters of 0.5 mm HEMT 25OC baseplate Major challenge of modeling for high power circuits scaling from reasonable test cell to large periphery output stages successfully implemented for scaling factors >100:1 Non-linear model fits small-signal parameters over a range of bias voltages All measurements performed using 1% duty cycle, 20s pulsed bias to control thermal effects

GaN HEMT Model - Large-Signal

Power Contour Levels: 36 dBm 35 dBm 34 dBm

measured model

On-wafer load-pull of 0.5 mm HEMT Measured at 3.5 GHz, VDS=48V, Id~25%IDSS, 25OC chuck temperature PAE contours not used for modeling due to sensitivity to harmonic loading PAE verified using hybrid amplifier measurements

Basic Thermal Features of High Voltage GaN

240 Watts CW RF from a 28.8mm HEMT operating at 50 volts drain voltage Assume 60% DC to RF conversion efficiency 160 watts dissipated heat Active chip area is 2.5 sq. mm so heat density is > 40 kilowatts per square inch ! Much emphasis on new amplifier architectures to improve drain efficiencies

Broadband Amplifier Performance Trade-Off Analysis - Background Broadband (0.8 to 2.2 GHz) push-pull amplifier to provide 100 watts peak power Two GaN HEMT die in Gemini package HEMTs attached to composite material shims within Cu-Mo-Cu package Study drain efficiencies over the band and impact on thermal management Comparison of different matching approaches and termination impedances

Theta-jc is 1.1 deg C/watt

Basic Amplifier
Different matching topologies Drain-to-Gate Feedback Lossy Match Multi-section reactive Lossy Match with Feedback Concentrate on Lossy Match case Input Match Schematic
DCVS ID=V1 V=28 V

PORT P=1 Z=50 Ohm

TLIN ID=TL6 Z0=43.09 Ohm EL=195.3 Deg F0=1.5 GHz

TLIN ID=TL7 Z0=28.29 Ohm EL=57.64 Deg F0=1.5 GHz

TLIN ID=TL8 Z0=9.149 Ohm EL=42.65 Deg F0=1.5 GHz

PORT P=3 Z=50 Ohm

3

DC RF
2

DC & RF

CAP ID=C7 C=1.243 pF

CAP ID=C8 C=2.414 pF

BIASTEE CAP ID=X1 ID=C1 C=2.271 pF

PORT P=2 Z=50 Ohm

SWPVAR ID=SWP4 VarName="Power" Values=stepped(10,40,.1) UnitType=None

Xo . . . Xn

PORT P=1 Z=50 Ohm

I_METER ID=AMP1

PORT P=3 Z=50 Ohm

3

DC DC & 1 RF RF
2

TLIN ID=TL3 Z0=10.16 Ohm EL=70.63 Deg F0=1.5 GHz

TLIN ID=TL4 CAP Z0=18.75 Ohm ID=C4 EL=86.31 Deg C=1.006 pF F0=1.5 GHz

TLIN ID=TL5 CAP Z0=35.25 Ohm ID=C5 C=0.6011 pF EL=93.57 Deg F0=1.5 GHz

Power=10 PORT1 P=1 Z=50 Ohm Pwr=Power dBm ATTEN ID=U1 R=50 Ohm LOSS=3 dB SUBCKT ID=S1 NET="IMN Lossy Match"
1 2 1 2 1 3 2

BIASTEE ID=X1
3

PORT P=2 Z=50 Ohm

PORT P=2 Z=50 Ohm

SUBCKT ID=S3 NET="GaN HEMT Die Model G3"

SUBCKT ID=S2 NET="OMN Lossy Match"

DCVS ID=V2 V=2.2 V

Output Match Schematic Overall Schematic

Simulated Amplifier Performance

Output Power at P3dB and Drain Efficiency

Efficiency

Small Signal Gain

Gain = 13.2 dB 0.8 dB POUT = 46 to 59 watts Drain Efficiency = 49 to 66% Worst Case Dissipated Heat is 54 watts (per transistor)

POUT

Thermal Performance
Assuming TJ limit of 200OC, maximum dissipated heat of 108 watts and theta-jc of 1.1 deg C/Watt leads to a maximum case temperature of 81 deg C The thermal characteristics of the die and the package are very important
The design requires a composite material shim such as silver-diamond (theta jc =550 W/mK) mounted on a Super-CMC package flange (theta jc = 370 W/mK)
Pdiss (W/mm)

3.75 W/mm dissipated 54 watts per transistor

Pdiss

3.5

2.5

Pdiss Lossy Match

1.5

0.5

Before full electrical design is completed broadband amplifiers require thermal design even with GaN HEMTs!

0 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3

Frequency (GHz)

Dissipated Power as a function of frequency

Comparison of Dissipated Power vs. Frequency for 4 Amplifier Approaches

Lossy match with feedback
4.5 4

Pdiss

Multi-section reactive

3.5

Pdiss Multisection Pdiss Lossy Match Pdiss LM w Feedback Pdiss MS w Feedback

P is (W m d s /m )

2.5

1.5

Feedback
0.5 0 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3

Lossy Match
Frequency (GHz)

Large-Signal Modeling of Broadband Amplifiers invaluable in selecting optimum topology for both electrical and thermal performance

Measured 0.5 to 2.5 GHz Push-Pull Amplifier Performance

25 to 50 ohm coupler
Drain Efficiency at Device Sat
70.00

60.00

50.00

Drain Efficiency (%)

40.00

Power out at Device Sat (W)

120.00

30.00

20.00

100.00
10.00

80.00
0.00 0.000 0.500 1.000 1.500 Frequency (GHz) 2.000 2.500 3.000

Psat (W)

60.00

40.00

20.00

0.00 0.000

0.500

1.000

1.500 Frequency (GHz)

2.000

2.500

3.000

Full amplifier with coupler insertion losses Average Gain = 15 dB Psat > 80 watts and Drain Efficiencies > 45%

500 to 2700 MHz Amplifier using Cree CGH40010F

DCVS ID=V2 V=28 V

DCVS ID=V1 V=2.05 V

I_M ETER ID=AM P1

Lossy Match
IND ID=L1 L=200 nH IND ID=L2 L=200 nH

PORT_PS1 P=1 Z=50 Ohm PStart=-8 dBm PStop=32 dBm PStep=5 dB

CAP ID=C5 C=8.513 pF

TLIN ID=TL3 Z0=53.79 Ohm EL=26.09 Deg F0=3 GHz

TLIN ID=TL2 Z0=12.22 Ohm EL=21.88 Deg F0=3 GHz

RES ID=R1 R=51 Ohm RES ID=R2 R=0 Ohm

1

TLIN ID=TL1 Z0=70.11 Ohm EL=32.91 Deg F0=3 GHz

CAP ID=C1 C=15.55 pF

CAP ID=C3 C=0.9191 pF

3

PORT P=2 Z=50 Ohm

PIPAD ID=P1 Z1=50 Ohm Z2=50 Ohm DB=2 dB

CAP ID=C4 C=1.096 pF

CAP ID=C2 C=1.187 pF

CGH40010F_r2 ID=40010F1 TNOM =105

Simulated Performance of 500 to 2700 MHz GaN HEMT PA

Small Signal S21 S11 and S22

30
80
DCRF(PORT _ 2 )[ *, X] Re a l Ci rc u i t DB(PT (PORT _2 ))[ *,X] (d Bm )

POUT and Efficiency Vs Input Power

5 0 0 to 2 70 0 M Hz Sta g e DCRF(PORT _ 2 )[ *, X] 5 0 0 to 2 70 0 M Hz Sta g e DB(PT (PORT _2 ))[ *,X] Re a l Ci rc u i t

20
p2

10 0
p3 p1

60 dBm and %

dB

40

-10 -20 -30 0.5

DB(|S(1,1)|)[X,2] 500 to 2700 MHz Stage DB(|S(2,1)|)[X,2] 500 to 2700 MHz Stage DB(|S(2,2)|)[X,2] 500 to 2700 MHz Stage
p1: Pwr = -3 dBm p2: Pwr = -3 dBm p3: Pwr = -3 dBm

20

1.5 Frequency (GHz)

2.5

2.7

0 -8 2 12 Input Power (dBm) 22 32

Worst Case Heat Dissipation is 9 watts Theta-jc of packaged transistor is 5 deg C/watt Max. channel temperature at 85 deg C case is 130 deg C.

Measured Performance of 500 to 2700 MHz GaN HEMT PA

Excellent agreement between simulations and measurements Measured efficiencies between 50 and 78% over the band
20 15 10 5
P OUT (dBm) / Efficiency (%) 82 80 78 76 74 72 70 68 66 64 62 60 58 56 54 52 50 48 46 44 42 40 38 36 0

Output Power vs. Frequency

44 42 40 38 36 P OUT (dBm) 34 32 30 28 0.25 GHz 0.50 GHz 0.75 GHz 1.00 GHz 1.25 GHz 1.50 GHz 1.75 GHz 2.00 GHz 2.25 GHz 2.50 GHz 2.70 GHz 3.00 GHz 10
p5 p2

Output Power

Simulated andVs Actual Simulated measured

26 24 22 20 12 14 16 18 20 22 24 26 28 30 32 34 PIN (dBm)

Saturated Output Power and Drain Efficiency Saturated Output Power and Efficiency

dB

0 -5 -10 0.5 1 1.5 Frequency (GHz) 2 2.5 2.7

p1: Pwr = -3 dBm p2: Pwr = -3 dBm p3: Pwr = -3 dBm p4: Pwr = -3 dBm p5: Pwr = -3 dBm p6: Pwr = -3 dBm

Efficiency Power

p1 p4 p3 p6

0.25

0.5

0.75

1.25

1.5

1.75

2.25

2.5

2.75

3.25

Frequency (GHz)

PSAT EFFICIENCY @PSAT

Linear WiMAX Amplifier Simulation versus Measured Data

60 Watt, 2.3 to 2.8 GHz linear amplifier design Developed an accurate packaged transistor model using the Cree GaN HEMT scale-able die model Circuit developed to address Fixed and Mobile Access WiMAX applications such as 802.16-2004 802.16e WiBro The design targets were as follows: Average Output Power > 8W EVM < 2.5% Drain Efficiency > 25% (under WiMAX stimulus)

CGH27060F Packaged Device Model

ID=CGH27060 ID=CG H27030 TNOM=25 TNOM=25
2

CG H40045F_r1

1
CAP ID=C5 C=0.03 pF

M LIN ID=T L1 W=250 m il L=60m il

SRL ID=RLD1 R= 0.007Ohm L= 0.285 nH

GaNg28v2_r3 ID=G aNv2sc1 T NOM =25 SC=20 SCF 1.44 = RT 2.7 H= VDD=50

SRL ID=RLD2 R= 0.007 O hm L= Lbond nH

M LIN ID=T L2 W=250 m il L= m 60 il

V_M ER ET ID=VM 1 CAP ID= CDpad2 C=0.48 pF CAP ID=C4 C=0.06pF

CAP ID=C1 C=0.06pF

PORT P=6 Z Ohm =50

PORT P=5 Z 50 Ohm =

CAP ID=C2 C=0.06pF

CAP ID=C3 C=0.06 pF

CAP I D= ad CDp 1 C=0 4 p .8 F

M SUB Er=9.6 H= m 20 il T 1.4 m = il Rho=1 T and=0 ErNom =9.6 Nam e=Alum _pkg1

SRL ID=RL1 R=0.001Ohm L=0.015nH

Input Circuit Model

ML IN ID=T L1 W =3 5 m il L=2 3 m il SU BCK T ID=S 3 NE T="Re sis to r_ 10 0 _ Oh m Ce nt e r1" M LI N I D=TL2 W =3 5 mil L =2 3 mil

MD L X
1 2

P O RT P =1 Z =50 Oh m

MLIN ID=TL 5 W =4 4 mil L=2 5 m il

M ST EP $ I D=TL 8

ML IN ID=T L3 W=1 0 m il L=4 0 m il

3

SU BC KT ID=S 1 NE T="In d u ct ive L in e_ 2p 5_ Ne w1"

S UB CK T ID=S 2 NE T=" In du c tive Lin e _ 2p 5 _ Ne w1 "

2 2

ML IN ID=TL 4 W =1 0 mil L =4 0 mil

P OR T P =2 Z=5 0 O h m

MS UB E r=3 .6 6 H =20 mil T =1. 4 mil R ho =1 T an d =0 .0 0 4 E rNo m=3 .6 6 N am e=R og e rs 1

MD L X

MO Dca tc 06 0 3 0 01 ID=A TC _60 0 S_ C1 C=2.2 p F MS UB = Sim _m od e =0 To lera n ce =1 PA DW =3 5 mil

SU BC KT ID =S 2 N ET ="Gate B ias F eed w ith T rans Line_02 _06_06" MLE F ID= Open W = 30 m il L=9 3 m il

SU BCK T ID= S4 NE T="Input La unc h_AS T UN ED "

3 1 2 1 2 1 2 1

M OD catc 06 03001 ID =AT C_6 00S _C 1 C =0.85 pF M SU B= Sim _m ode= 0 Tol era nc e=1 PAD W =35 m il

MD LX

2 1 2

PO R T P= 1 Z =5 0 O hm

SU BC KT ID =S1 NE T= "S ta bil ity C irc uit_N ew"

S UB CKT ID = S5 N ET ="Input T ank J unctio n_EM 1 "

POR T P=2 Z= 50 Ohm S UB CK T I D= S3 N ET ="G ate Pad 3 Por t"

PO R T P= 1 Z=5 0 O hm

M LIN I D=T L1 3 W =7 0 mil L =200 m il

MSTE P$ ID =TL14

MLIN ID =TL12 W =20 mi l L= 130 m il

M LIN I D=T L11 W =7 0 mil L =200 mi l

MSTE P$ ID =TL10

M STEP $ I D=T L9

M LIN ID =T L2 W =1 0 mil L =120 mi l

MLI N ID =TL1 W =44 mi l L= 25 m il

M STEP $ I D= TL1 5 MLIN ID =T L4 W =44 mil L= 565 m il

M STE P$ ID =TL8

P O RT P =2 Z= 50 O hm

MSU B Er= 3.66 H= 20 m il T= 1.4 mil Rh o=1 Ta nd= 0.004 ErN om =3.66 Na me= Roge rs 1

M LIN ID =TL_S H W =20 m il L=2 30 m il

M SU B Er =3.66 H =20 m il T =1.4 m il R ho=1 T a nd=0.004 Er N om =3.48 N am e=R oge rs 1

3
SU BC KT ID =S8 N ET= "Input_S hunt_GN D _03_21_ 071"

Output Circuit Model

3 1 4

ML I N I = Db i as L 2 D W = W b a s mi l i L L b i as m l = i
1

S UB C K T I D= S 5 NET = "D rai n B i as T e rm n a t o n " i i M B E ND 90 X I D= M S 3 W = W o u t mi l M = 0. 5 M LI N I D= T L 5 W = W o u t mi l L = 44 m l i

M B END 90 X I D= M S 4 W = W o u t mi l M =0 . 5

M B E N D9 0 X ID = MS 1 W = W b a s mi l i M = 0 .5

ML I N I = Db i as L 1 D W = W b a s mi l i L= 2 4 0 m i l P O RT P=1 Z = 5 0 O hm

M L EF I D= O S t u b1 W = 1 1 0 mi l L =3 0 m il

ML E F I = OS t u b 2 D W = 11 0 m l i L= 3 0 mi l

L st u b _ A = 50 W o u t = 34 L o ut = 6 1 L st u b _ M= 7 0 W d l n e = 1 00 i W b i as = 4 0 L b a s = 25 5 i

M L IN I D = T L3 W = W o ut m i l L = L o ut m i l

M LI N I D= T L 7 W=Wout m l i L = L ou t m l i

M L EF I D =O S t u b 4 W =4 0 m l i L =1 7 4 m il M LI N I D= T L 6 W = 3 4 mi l L = 60 m l i
3

M L EF I D= O S t u b6 W = 7 2 mi l L =2 6 m il

S UB C K T I D= S 3 NE T = "D rai n B l o ck Ca p P a d_ 2 p 5 "

M DL X
1 2 1 2 1 2

M B E ND 90 X I D= M S 2 W = W o u t mi l M = 0. 5

M CR OS S$ I D =T L 9
1 3

M STEP$ I D= T L 1 3
1

M LI N I D= T L 1 W = 4 4 mi l L = 1 44 m l i

ML I N I = T L1 5 D W = 70 m i l L= 2 0 0 m i l

M LI N I D= T L 1 0 W = 2 0 mi l L = 1 30 m l i

M STEP$ I D =T L 4

ML I N I = T L1 1 D W = 70 m i l L 2 0 0 m il =

S U BCK T I D =S 2 N E T = "Dra i n P ad 4 P o rt _2 p 5 "

M L IN I D =T L 1 6 W =1 6 0 mi l L =2 6 5 m il

MS T P $ E I D= T L 19

M LI N I D= T L 2 0 W =1 1 0 m il L =2 m il

S U B CKT I D= S 7 NE T " 3p o rt _ co rn e r" =

2 1

ML I N I D= Db i a sL W = W b i as m l i L =2 4 0 mi l

M OD ca t c 10 0 B0 0 1 I D= A T C _1 0 0 B_ C1 C= 8 . 2 pF M S UB = Si m _m o d e= 0 T o l era n c e= 1 PA D W = 1 10 m l i

ML I N I D= T L 2 W = W o u t mi l L =5 0 m l i

M LI N I D= T L 8 W = W o u t mi l L = 45 m i l

M L IN ID = T 1 7 L W = 48 m l i L = 1 2 mi l

M CR OS S $ 4 I D =T L 1 8

M STEP$ I D =T L 1 2

M STEP$ I D= T L 1 4

P ORT P =2 Z = 5 0 Oh m

M L EF I D =O S t u b 3 W =4 0 m l i L =1 7 4 m il

M L EF I D= O S t u b5 W = 7 2 mi l L=2 6 m il

M B E N D9 0 X ID = MS 6 W = W b a s mi l i M = 0 .5
1

M SUB E r= 3 . 6 6 H = 0 ml 2 i T =1 .4 m i l R h =1 o T a n d =0 . 0 0 4 E rN o m= 3 . 4 8 N a e = Ro g ers 4 3 50 m

S U B CK T I D= S 6 NE T =" Ha rmo n i c A s s s t _ A S T UN ED" i

M LI N ID= Db i a sL 3 W = W b i a s m il L = Lb i a s m i l

SU B CK T I D= S 1 NE T " Dra n Bi a s T e rm i na ti o n" = i

Fully Modeled Layout of Amplifier

Actual Printed Circuit Board

Simulated and Measured Amplifier

Small Signal Frequency Response

15 14 13 Small Signal Gain (dB) 12 11 10 9 8 7 6 5 1.8 1.9 2
DB(|S(1,1)|) (R) Amp_SS_AsTuned DB(|S(2,1)|) (L) Amp_SS_AsTuned DB(|S(2,1)|) (L) fixt20_G28V2144L1w3__5 DB(|S(1,1)|) (R) fixt20_G28V2144L1w3__5 DB(|S(2,2)|) (R) Amp_SS_AsTuned

5 3 1 Return Loss (dB) -1 -3 -5 -7 -9 -11 -13 -15

2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 Frequency (GHz)

3.1 3.2

Simulated Linearity of Amplifier

2-Tone IMD vs Average Ouput Power

0 -10 -20 -30 -40 -50 -60 26 28 30 32 34 36 38 40 42 2 Tone Average Output Power (dBm) 44 46
IM3L_Pave (L) IM3U_Pave (L) IM5L_Pave (L) IM5U_Pave (L) DE_Pave (R)

60 50 40 30 20 10 0 Drain Efficiency (%)

3rd & 5th Order IMD (dBc)

Measured Linearity of Amplifier

EVM and Efficiency vs. Average Output Power
4.00 3.50 3.00 2.50

EVM 2.5GHz DE 2.5GHz

40.0% 35.0% 30.0% 25.0% 20.0% 15.0% 10.0% 5.0% 0.0% 42.0

2.00 1.50 1.00 0.50 0.00 22.0

24.0

26.0

28.0

30.0

32.0

34.0

36.0

38.0

40.0

Average Output Power (dBm)

Drain Efficiency (%)

EVM (%)

Measured Linearity of Amplifier

EVM and Efficiency vs Frequency
4.00 40.0%

EVM @ 26dBm
3.50 3.00 2.50

EVM @ 39dBm Efficiency @ 2.5% EVM

35.0% 30.0% 25.0% 20.0% 15.0% 10.0% 5.0% 0.0% 2.700

2.00 1.50 1.00 0.50 0.00 2.300

2.400

2.500

2.600

Frequency (GHz)

Drain Efficiency (%)

EVM (%)

Future GaN HEMT Model Improvements

Behavioral models to allow direct simulation of various digital waveforms Improved active and passive switch models Improved models for switch mode PAs Additional noise models Support for simulators other than ADS and MWO

Conclusions
Successful development of GaN HEMT large-signal models Models are scale-able over > 100:1 gate width ratio Models Are broadband Accurately predict DC, s-parameters, dynamic load lines, non-linearities Include self-heating Can be used in a range of amplifier types Demonstrated a variety of hybrid circuit applications Equally useful for MMIC amplifier designs Future extensions to include other features such as noise