APM4550J

Dual Enhancement Mode MOSFET (N- and P-Channel)

Features

N-Channel 30V/8A, RDS(ON) = 20m (typ.) @ VGS = 10V RDS(ON) = 30m (typ.) @ VGS = 4.5V

Pin Description

P-Channel -30V/-7A, RDS(ON) = 40m (typ.) @ VGS = -10V RDS(ON) = 62m (typ.) @ VGS = -4.5V

Top View of DIP 8

D1 D1

S2

Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant)
G1

G2

Applications

Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems
S1

D2

D2

N-Channel

P-Channel

Ordering and Marking Information

APM4550 Lead Free Code Handling Code Temp. Range Package Code Package Code J : DIP-8 Operating Junction Temp. Range C : -55 to 150C Handling Code TU : Tube Lead Free Code L : Lead Free Device

APM4550J :

APM4550 XXXXX

XXXXX - Date Code

Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.1 - May, 2007 1 www.anpec.com.tw

APM4550J
Absolute Maximum Ratings
Symbol VDSS VGSS ID* IDM* IS* TJ TSTG PD* RJA* Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 300s Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Power Dissipation TA=25C TA=100C VGS=10V (TA = 25C unless otherwise noted) N Channel 30 20 8 30 2.5 150 -55 to 150 2.5 1 50 W C/W P Channel -30 20 -7 -30 -2 A C V A Unit

Thermal Resistance-Junction to Ambient 2 Note: *Surface Mounted on 1in pad area, t 10sec.

Electrical Characteristics
Symbol Parameter

(TA = 25C unless otherwise noted)

Test Condition

APM4550J Min. Typ. Max.

Unit

Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250A VGS=0V, IDS=-250A VDS=24V, VGS=0V IDSS Zero Gate Voltage Drain Current TJ=85C VDS=-24V, VGS=0V TJ=85C VGS(th) IGSS Gate Threshold Voltage Gate Leakage Current VDS=VGS, IDS=250A VDS=VGS, IDS=-250A VGS=20V, VDS=0V VGS=10V, IDS=8A RDS(ON)
a

N-Ch P-Ch N-Ch

30 -30 1 30 -1

P-Ch -30 N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 20 40 30 62 1 -1 1.5 -1.5 2 -2 100 100 27.5 50 40 80 m nA V

Drain-Source On-State Resistance

VGS=-10V, IDS=-7A VGS=4.5V, IDS=5A VGS=-4.5V, IDS=-4A

Copyright ANPEC Electronics Corp. Rev. A.1 - May, 2007

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APM4550J
Electrical Characteristics (Cont.)
Symbol Parameter

(TA = 25C unless otherwise noted)

APM4550J Min. Typ. Max. Unit

Test Condition

Diode Characteristics VSD trr Q rr

a

Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge

b

ISD=2.5A, V GS=0V ISD=-2A, V GS=0V N-Channel ISD=8A, dlSD/dt=100A/s N-Channel ISD=-7A, dlSD/dt=100A/s

N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch

0.8 -0.8 16 15 9 6

1.3 -1.3

V ns nC

Dynamic Characteristics RG Gate Resistance

VGS=0V,V DS=0V,F=1MHz N-Channel VGS=0V, VDS=15V, Frequency=1.0MHz P-Channel VGS=0V, VDS=-15V, Frequency=1.0MHz N-Channel VDD=15V, R L=15, IDS=1A, V GEN=10V, R G=6 P-Channel VDD=-15V, R L=15, IDS=-1A, V GEN=-10V, R G=6
b

N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch

2 8.3 620 600 90 100 70 75 6 8 10 12 22 27 3 14 11 14 18 22 40 50 6 25

C iss

Input Capacitance

C oss

Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time

pF

C rss td(ON) Tr td(OFF) Tf

ns

Gate Charge Characteristics Qg Q gs Q gd Total Gate Charge

N-Channel VDS=15V, V GS=10V, IDS=8A P-Channel VDS=-15V, V GS=-10V, IDS=-7A

N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch

14 12 1.3 1.1 3.2 2.8

19 16 nC

Gate-Source Charge Gate-Drain Charge

Notes: a : Pulse test ; pulse width 300s, duty cycle 2%. b : Guaranteed by design, not subject to production testing.

Copyright ANPEC Electronics Corp. Rev. A.1 - May, 2007

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APM4550J
Typical Characteristics
N-Channel Power Dissipation
3.0
10

Drain Current

2.5

Ptot - Power (W)

2.0

ID - Drain Current (A)

1.5

1.0

0.5 TA=25 C 0 20 40 60 80 100 120 140 160

o

2 TA=25 C,VG=10V 0 20 40 60 80 100 120 140 160

o

0.0

Tj - Junction Temperature (C)

Tj - Junction Temperature (C)

Safe Operation Area Normalized Transient Thermal Resistance

100
2 1

Thermal Transient Impedance

Duty = 0.5 0.2 0.1 0.05

ID - Drain Current (A)

Rd s(o n)

10

Lim it

300s

0.1

0.02 0.01

1ms 10ms 100ms 1s

Single Pulse

0.01

0.1

DC

0.01 0.01

TA=25 C

0.1

10

100

1E-3 1E-4

Mounted on 1in pad o RJA : 50 C/W

1E-3

0.01

0.1

10 30

VDS - Drain - Source Voltage (V)

Square Wave Pulse Duration (sec)

Copyright ANPEC Electronics Corp. Rev. A.1 - May, 2007

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APM4550J
Typical Characteristics (Cont.)
N-Channel Output Characteristics
30 27 24 VGS= 4.5,5,6,7,8,9,10V 4V

Drain-Source On Resistance
50 45

RDS(ON) - On - Resistance (m)

40 35 30 25 20 15 10 VGS=10V VGS=4.5V

ID - Drain Current (A)

21 18 15 12 9 6 3 2.5V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3V 3.5V

10

15

20

25

30

VDS - Drain-Source Voltage (V)

ID - Drain Current (A)

Drain-Source On Resistance
50 ID=8A 45
1.4 1.6

Gate Threshold Voltage

IDS=250

RDS(ON) - On - Resistance (m)

40 35 30 25 20 15 10

Normalized Threshold Voltage

1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25

10

25

50

75 100 125 150

VGS - Gate - Source Voltage (V)

Tj - Junction Temperature (C)

Copyright ANPEC Electronics Corp. Rev. A.1 - May, 2007

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APM4550J
Typical Characteristics (Cont.)
N-Channel Drain-Source On Resistance
2.00 VGS = 10V 1.75 IDS = 8A
10 Tj=150 C
o

Source-Drain Diode Forward

30

Normalized On Resistance

1.50 1.25 1.00 0.75 0.50 0.25 0.00 -50 -25 RON@Tj=25 C: 20m 0 25 50 75 100 125 150
o

IS - Source Current (A)

Tj=25 C 1

0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

Tj - Junction Temperature (C)

VSD - Source - Drain Voltage (V)

Capacitance
900 800 Frequency=1MHz
10 VDS=15V 9 IDS=8A

Gate Charge

VGS - Gate - source Voltage (V)

30

700

8 7 6 5 4 3 2 1

C - Capacitance (pF)

600 500 400 300 200 100 Crss 0 0 5 10 15 20 Coss

Ciss

25

10

12

14

VDS - Drain - Source Voltage (V)

QG - Gate Charge (nC)

Copyright ANPEC Electronics Corp. Rev. A.1 - May, 2007

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APM4550J
Typical Characteristics (Cont.)
P-Channel Power Dissipation
3.0
8 7 6 5 4 3 2 1

Drain Current

2.5

Ptot - Power (W)

2.0

1.5

1.0

0.5 TA=25 C 0 20 40 60 80 100 120 140 160

o

-ID - Drain Current (A)

0.0

TA=25 C,VG=-10V 0 20 40 60 80 100 120 140 160

Tj - Junction Temperature (C)

Tj - Junction Temperature (C)

Safe Operation Area Normalized Transient Thermal Resistance

100
2 1

Thermal Transient Impedance

Duty = 0.5 0.2 0.1

-ID - Drain Current (A)

10

Rd s(o n) Lim it

300s

0.1
0.02 0.01

0.05

1ms 10ms 100ms

0.1

1s DC

0.01

Single Pulse

0.01 0.01

TA=25 C

0.1

10

100

1E-3 1E-4

Mounted on 1in pad o RJA : 50 C/W

1E-3

0.01

0.1

10 30

-VDS - Drain - Source Voltage (V)

Square Wave Pulse Duration (sec)

Copyright ANPEC Electronics Corp. Rev. A.1 - May, 2007

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APM4550J
Typical Characteristics (Cont.)
P-Channel Output Characteristics
30 27 24 VGS=-6,-7 -8,-9,-10V -5V

Drain-Source On Resistance
100 90 VGS=-4.5V

-4.5V -4V

RDS(ON) - On - Resistance (m)

80 70 60 50 40 30 20 10 VGS=-10V

-ID - Drain Current (A)

21 18 15 12 9 6 3 0 0.0 0.5 1.0 1.5

-3.5V

-3V

-2.5V

2.0

2.5

3.0

10

15

20

25

30

-VDS - Drain - Source Voltage (V)

-ID - Drain Current (A)

Drain-Source On Resistance
100 ID=-7A 90

Gate Threshold Voltage

1.6 1.4 IDS= -250

RDS(ON) - On - Resistance (m)

80 70 60 50 40 30 20

Normalized Threshold Voltage

2 3 4 5 6 7 8 9 10

1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25

25

50

75 100 125 150

-VGS - Gate - Source Voltage (V)

Tj - Junction Temperature (C)

Copyright ANPEC Electronics Corp. Rev. A.1 - May, 2007

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APM4550J
Typical Characteristics (Cont.)
P-Channel Drain-Source On Resistance
2.0 VGS = -10V 1.8 IDS = -7A

Source-Drain Diode Forward

20 10

Normalized On Resistance

1.6

-IS - Source Current (A)

1.4 1.2 1.0 0.8 0.6 0.4 RON@Tj=25 C: 40m 0.2 -50 -25 0 25 50 75 100 125 150
o

Tj=150 C
o

Tj=25 C 1

0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

Tj - Junction Temperature (C)

-VSD - Source - Drain Voltage (V)

Capacitance
800 700

Gate Charge
10 VDS= -15V 9 IDS= -7A

Frequency=1MHz

-VGS - Gate - source Voltage (V)

30

8 7 6 5 4 3 2 1

600

Ciss

C - Capacitance (pF)

500 400 300 200 Coss 100 0 Crss 0 5 10 15 20 25

10

12

-VDS - Drain - Source Voltage (V)

QG - Gate Charge (nC)

Copyright ANPEC Electronics Corp. Rev. A.1 - May, 2007

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APM4550J
Package Information
DIP-8
D

E1

A2

A1

D1

b b2

eA eB

S Y M B O L A A1 A2 b b2 c D D1 E E1 e eA eB L

DIP-8 MILLIMETERS MIN. MAX. 5.33 0.38 2.92 0.36 1.14 0.20 9.01 0.13 7.62 6.10 2.54 BSC 7.62 BSC 10.92 2.92 3.81 0.115 8.26 7.11 4.95 0.56 1.78 0.35 10.16 0.015 0.115 0.014 0.045 0.008 0.355 0.005 0.300 0.240 0.100 BSC 0.300 BSC 0.430 0.150 0.325 0.280 0.195 0.022 0.070 0.014 0.400 MIN. INCHES MAX. 0.210

Copyright ANPEC Electronics Corp. Rev. A.1 - May, 2007

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0.38

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APM4550J
Physical Specifications
Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.

Reflow Condition
TP

(IR/Convection or VPR Reflow)

tp Critical Zone T L to T P

Ramp-up

Temperature

TL Tsmax

tL

Tsmin Ramp-down ts Preheat

25

t 25 C to Peak

Tim e

Classification Reflow Profiles

Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (TL) - Time (tL) Peak/Classification Temperature (Tp) Time within 5C of actual Peak Temperature (tp) Ramp-down Rate Time 25C to Peak Temperature Sn-Pb Eutectic Assembly 3C/second max. 100C 150C 60-120 seconds 183C 60-150 seconds See table 1 10-30 seconds 6C/second max. 6 minutes max. Pb-Free Assembly 3C/second max. 150C 200C 60-180 seconds 217C 60-150 seconds See table 2 20-40 seconds 6C/second max. 8 minutes max.

Notes: All temperatures refer to topside of the package. Measured on the body surface.

Copyright ANPEC Electronics Corp. Rev. A.1 - May, 2007

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APM4550J
Classification Reflow Profiles (Cont.)
Table 1. SnPb Eutectic Process Package Peak Reflow Temperatures Package Thickness <2.5 mm 2.5 mm Volume mm <350
3 3

Volume mm 350

240 +0/-5C 225 +0/-5C

225 +0/-5C 225 +0/-5C

Table 2. Pb-free Process Package Classification Reflow Temperatures Package Thickness <1.6 mm 1.6 mm 2.5 mm 2.5 mm Volume mm <350 260 +0C* 260 +0C* 250 +0C*
3

Volume mm 350-2000 260 +0C* 250 +0C* 245 +0C*

Volume mm >2000 260 +0C* 245 +0C* 245 +0C*

* Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature +0C. For example 260C+0C) at the rated MSL level.

Reliability Test Program

Test item SOLDERABILITY HOLT PCT TST ESD Latch-Up Method MIL-STD-883D-2003 MIL-STD-883D-1005.7 JESD-22-B,A102 MIL-STD-883D-1011.9 MIL-STD-883D-3015.7 JESD 78 Description 245C, 5 SEC 1000 Hrs Bias @125C 168 Hrs, 100%RH, 121C -65C~150C, 200 Cycles VHBM > 2KV, VMM > 200V 10ms, 1tr > 100mA

Customer Service
Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pao Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369

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