2SK2225

Silicon N Channel MOS FET

REJ03G1005-0200 (Previous: ADE-208-140) Rev.2.00 Sep 07, 2005

Application
High speed power switching

Features
High breakdown voltage (VDSS = 1500 V) High speed switching Low drive current No Secondary breakdown Suitable for switching regulator, DC-DC converter

Outline
RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM)
D 1. Gate 2. Drain 3. Source

Rev.2.00 Sep 07, 2005 page 1 of 6

2SK2225

Absolute Maximum Ratings

(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1 % 2. Value at Tc = 25C Symbol VDSS VGSS ID ID(pulse)*1 IDR Pch*2 Tch Tstg Ratings 1500 20 2 7 2 50 150 55 to +150 Unit V V A A A W C C

Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 3. Pulse Test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 1500 2.0 0.45 Typ 9 0.75 990 125 60 17 50 150 50 0.9 1750 Max 1 500 4.0 12 Unit V A A V S pF pF pF ns ns ns ns V ns Test conditions ID = 10 mA, VGS = 0 VGS = 20 V, VDS = 0 VDS =1200 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 1 A, VGS = 15 V*3 ID = 1 A, VDS = 20 V*3 VDS = 10 V, VGS = 0, f = 1 MHz ID = 1 A, VGS = 10 V, RL = 30

IF = 2 A, VGS = 0 IF = 20 A, VGS = 0, diF / dt = 100 A / s

Rev.2.00 Sep 07, 2005 page 2 of 6

2SK2225

Main Characteristics
Power vs. Temperature Derating
80 10 3 60
0 10

Maximum Safe Operation Area

10
PW

Channel Dissipation Pch (W)

Drain Current ID (A)

1 0.3 0.1 0.03

1
10 m s

m
(1

C D r pe O

40

sh

ot

20

Operation in this area is limited by RDS(on)

Ta = 25C 0 50 100 150 200 0.01 10 30 100 300 1000 3000 10000

n io at (T c =

) C 25

Case Temperature TC (C)

Drain to Source Voltage VDS (V)

Typical Output Characteristics

5 Pulse Test 7V 3 6V 15 V 2.0 10 V 8V

Typical Transfer Characteristics

Drain Current ID (A)

Drain Current ID (A)

1.6

VDS = 25 V Pulse Test

1.2

0.8 Tc = 75C 25C 25C

5V
VGS = 4 V

0.4

20

40

60

80

100

10

Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage
50 Pulse Test 40 ID = 3 A 30 2A 1A 0.5 A 0 4 8 12 16 20

Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current
50 20 10 5

Drain to Source Saturation Voltage VDS (on) (V)

Static Drain to Source on State Resistance RDS (on) ()

VGS = 10 V

15 V

20

2 Pulse Test 1 0.5 0.1

10

0.2

0.5

10

Gate to Source Voltage VGS (V)

Drain Current ID (A)

Rev.2.00 Sep 07, 2005 page 3 of 6

2SK2225
Static Drain to Source on State Resistance vs. Temperature
Forward Transfer Admittance yfs (S)
20 ID = 2 A 10 5 2 1 0.5
VDS = 25 V Pulse Test

Static Drain to Source on State Resistance RDS (on) ()

Forward Transfer Admittance vs. Drain Current

16

12

0.5 A, 1 A

Tc = 25C 25C 75C

4 0 40

VGS = 15 V Pulse Test

0.2 0.1 0.05

40

80

120

160

0.1

0.2

0.5

Case Temperature TC (C) Body to Drain Diode Reverse Recovery Time

5000 10000

Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage

VGS = 0 f = 1 MHz

Reverse Recovery Time trr (ns)

Capacitance C (pF)

2000 1000 500

1000

Ciss

200 100 50

di / dt = 100 A / s, Ta = 25C VGS = 0, Pulse Test

100

Coss Crss

10

0.05 0.1

0.2

0.5

10

20

30

40

50

Reverse Drain Current IDR (A)

Drain to Source Voltage VDS (V)

Dynamic Input Characteristics

Drain to Source Voltage VDS (V)
1000

Switching Characteristics
20
1000

Gate to Source Voltage VGS (V)

Switching Time t (ns)

800

VDD = 250 V 400 V 600 V VDS

500

16
VGS

td(off)
200 100

VGS = 10 V PW = 2 s duty < 1 %

600

12

400

8
VDD = 250 V 400 V 600 V

tf
50

tr td(on)

200

ID = 2.5 A 60 80

20 10

20

40

0 100

0.05 0.1

0.2

0.5

Gate Charge Qg (nc)

Drain Current ID (A)

Rev.2.00 Sep 07, 2005 page 4 of 6

2SK2225
Reverse Drain Current vs. Source to Drain Voltage
5

Reverse Drain Current IDR (A)

Pulse Test 4

10 V, 15 V
VGS = 0, 5 V

0.4

0.8

1.2

1.6

2.0

Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance S (t)
3 Tc = 25C

D=1 0.5

0.3

0.2

0.1

0.1
0.05

ch c(t) = s (t) ch c ch c = 2.50C/W, Tc = 25C

PDM

0.03

0.02 0.01
1 sh p ot

D=
PW T

PW T

uls

0.01 10

100

1m

10 m

100 m

10

Pulse Width PW (s)

Switching Time Test Circuit Vin Monitor D.U.T. RL VDD = 30 V Vout Monitor Vin Vout Vin 10 V 50 10% 10%

Waveforms 90%

10%

90% td(on)

90% td(off) tf

tr

Rev.2.00 Sep 07, 2005 page 5 of 6

2SK2225

Package Dimensions
JEITA Package Code
SC-93

RENESAS Code
PRSS0003ZA-A

Package Name TO-3PFM / TO-3PFMV

MASS[Typ.] 5.2g

Unit: mm
5.0 0.3
5.5 0.3

15.6 0.3 3.2

+ 0.4 0.2

5.0 0.3 19.9 0.3

2.0 0.3

2.7 0.3

0.66 5.45 0.5

+ 0.2 0.1

21.0 0.5

4.0 0.3 2.6 0.86

3.2 0.3 1.6 0.86

0.2 0.9 + 0.1

5.45 0.5

Ordering Information
Part Name 2SK2225-E Quantity 360 pcs Box (Tube) Shipping Container

Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.

Rev.2.00 Sep 07, 2005 page 6 of 6

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