UNISONIC TECHNOLOGIES CO.

, LTD 4N60
4 Amps, 600 Volts N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
1 TO-220

Power MOSFET

TO-220F

FEATURES
* RDS(ON) = 2.5 @VGS = 10 V * Ultra low gate charge ( typical 15 nC ) * Low reverse transfer Capacitance ( CRSS = typical 8.0 pF ) * Fast switching capability * Avalanche energy Specified * Improved dv/dt capability, high ruggedness *Pb-free plating product number: 4N60L

SYMBOL
2.Drain

1.Gate

3.Source

ORDERING INFORMATION
Normal 4N60-TA3-T 4N60-TF3-T Order Number Lead Free Plating 4N60L-TA3-T 4N60L-TF3-T Package TO-220 TO-220F Pin Assignment 1 2 3 G D S G D S Packing Tube Tube

4N60L-TA3-T (1)Packing Type (2)Package Type (3)Lead Plating (1) T: Tube, R: Tape Reel (2) TA3: TO-220, TF3: TO-220F (3) L: Lead Free Plating Blank: Pb/Sn ,

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ABSOLUTE MAXIMUM RATINGS (TC = 25, unless otherwise specified)
PARAMETER Drain-Source Voltage Gate-Source Voltage Avalanche Current - (Note 1) SYMBOL VDSS VGSS IAR

Power MOSFET

RATINGS UNIT 600 V 30 V 4.4 A TC = 25C 4.0 A ID Continuous Drain Current TC = 100C 2.8 A Pulsed Drain Current, TP Limited by TJMAX - (Note 1) IDM 16 A Avalanche Energy, Single Pulsed (Note 2) EAS 260 mJ Avalanche Energy, Repetitive, Limited by TJMAX EAR 10.6 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns Power Dissipation (TC = 25C) PD 106 W Junction Temperature TJ +150 Storage Temperature TSTG -55 ~ +150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA
PARAMETER Junction-to-Ambient Junction-to-Case Case-to-Sink SYMBOL JA JC CS MIN TYP MAX 62.5 3 UNIT C/W C/W C/W

0.5

ELECTRICAL CHARACTERISTICS (TC =25, unless otherwise specified)

PARAMETER Off Characteristics Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Forward Reverse SYMBOL BVDSS IDSS IGSS TEST CONDITIONS VGS = 0 V, ID = 250 A VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V MIN TYP MAX UNIT 600 10 100 100 -100 0.6 2.0 4.0 520 70 8 13 45 25 35 15 3.4 7.1 670 90 11 35 100 60 80 20 4.0 2.5 V A A nA nA V/ V S pF pF pF ns ns ns ns nC nC nC

Breakdown Voltage Temperature Coefficient On Characteristics Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge

BVDSS/TJ ID = 250 A, Referenced to 25C VGS(TH) RDS(ON) gFS CISS COSS CRSS tD(ON) tR tD(OFF) tF QG QGS QDD VDS = VGS, ID = 250 A VGS = 10 V, ID = 2.2 A VDS = 50 V, ID = 2.2 A (Note 4)

VDS = 25 V, VGS = 0 V, f = 1MHz

VDD = 300V, ID = 4.0 A, RG = 25 (Note 4, 5)

VDS= 480V,ID= 4.0A, VGS= 10 V (Note 4, 5)

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ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER SYMBOL TEST CONDITIONS Source- Drain Diode Ratings and Characteristics Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 4.4 A Maximum Continuous Drain-Source IS Diode Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time tRR VGS = 0 V, IS = 4.4 A, dIF/dt = 100 A/s (Note 4) Reverse Recovery Charge QRR Notes: 1. Repetitive Rating : Pulse width limited by TJ 2. L = 25mH, IAS = 4.4A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 4.4A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature

Power MOSFET

MIN

TYP MAX UNIT 1.4 4.4 17.6 250 1.5 V A A ns C

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TEST CIRCUITS AND WAVEFORMS

Power MOSFET

D.U.T.

+ VDS -

+ L

RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * I SD controlled by pulse period * D.U.T.-Device Under Test VDD

Fig. 1A Peak Diode Recovery dv/dt Test Circuit

VGS (Driver)

P.W.

Period

D=

P. W. Period

VGS= 10V

I FM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt

Body Diode Recovery dv /dt VDS (D.U.T.) VDD

Body Diode

Forward Voltage Drop

Fig. 1B Peak Diode Recovery dv/dt Waveforms

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TEST CIRCUITS AND WAVEFORMS (Cont.)
RL VDD

Power MOSFET

VDS VGS RG

VDS

90%

10V
Pulse Width 1s Duty Factor 0.1%

D.U.T.

VGS

10%
t D(ON ) tR tD (OFF) tF

Fig. 2A Switching Test Circuit

Fig. 2B Switching Waveforms

50k 12V 0.2F 0.3F

Same Type as D.U.T. 10V VDS QGS

QG

QGD

VGS DUT 3mA VG

Charge

Fig. 3A Gate Charge Test Circuit

Fig. 3B Gate Charge Waveform

L VDS BVDSS

RD

VDD D.U.T.

10V tp

IAS

tp

Time

Fig. 4A Unclamped Inductive Switching Test Circuit

Fig. 4B Unclamped Inductive Switching Waveforms

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TYPICAL CHARACTERISTICS

Power MOSFET

Drain-Source Breakdown Voltage, BVDSS (Normalized)

Drain-Source On-Resistance, RDS(ON) (Normalized)

Breakdown Voltage Variation vs . Temperature 1.2 1.1 1.0 0.9 Note: 1. VGS=0V 2. ID=250A

On-Resistance Junction Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -100 -50 0 50 100 150 200 Note: 1. VGS=10V 2. ID=4A

0.8 -100 -50 0 50 100 150 200 Junction Temperature, TJ ()

Junction Temperature, TJ ()
Maximum Drain Current vs. Case Temperature 5
Drain Current, I D (A)

Maximum Safe Operating Area

Operation in This Area is Limited by R DS(on )

Drain Current, ID (A)

10

100 s 1ms 10ms

4 3 2 1 0 25 50 75 100 125 Case Temperature, TC ()

0.1 1

Notes: 1. T J=25 2. TJ=150 3. Single Pulse

DC

10

100

1000

Drain-Source Voltage, VDS (V)

On-State Characteristics 10
Drain Current, ID (A) Drain Current, I D (A)
V GS Top : 10V 9V 8V 7V 6V 5.5V 5V Bottorm :5.0V

Transfer Characteristics 10 25 1 150

5.0V

0.1

Notes: 1. 250s Pulse Test 2. TC=25

0.1

Notes: 1. VDS =50V 2. 250 s Pulse Test

0.1 1 10 Drain-to-Source Voltage, VDS (V)

4 6 8 10 2 Gate-Source Voltage, VGS (V)

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TYPICAL CHARACTERISTICS(Cont.)
On-Resistance Variation vs Drain . Current and Gate Voltage 6 5 4 3 2 1 0 0
Note: TJ=25

Power MOSFET

On State Current vs. Allowable Case Temperature

Reverse Drain Current, IDR (A)

Drain-Source On-Resistance, RDS(ON) (ohm)

10 150 25 1 Notes: 1. VGS=0V 2. 250s Test 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Source-Drain Voltage, VSD (V)
Gate Charge Characteristics 12

VGS =20V VGS=10V

6 8 10 12 2 4 Drain Current, I D (A)

Capacitance Characteristics (Non-Repetitive)

1200 1000
Capacitance (pF)

Gate-Source Voltage, VGS (V)

Ciss=Cgs +Cgd (Cds=shorted ) Coss=Cds +Cgd Crs s=Cgd

10 8 6 4 2 0

Ciss Coss
Notes: 1. V GS =0V 2. f = 1MHz

VDS=300V VDS=480V VDS=120V

800 600 400 200 0 0.1 Crss 1

Note: I D=4A 0 5 10 15 20 25

10

Drain-SourceVoltage VDS (V) ,

Total Gate Charge, QG (nC)

Transient Thermal Response Curve 1

Thermal Response, JC (t)

Power Dissipation 120 100 80

0.1
Notes : 1. J C (t) = 1.18/ W Max. 2. Duty Factor , D=t 1/t2 3. TJ M-TC=P DMJC (t)

PD (w)

60 40 20

0.01 1E-5 1E-4 1E-3 0.01 0.1 1 10 Square Wave Pulse Duration t1 (sec) ,

0 20 40 60 80 100 120 140 160 T C (C)

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Power MOSFET

UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.

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