UNISONIC TECHNOLOGIES CO.

, LTD 2SC2688
NPN EPITAXIAL SILICON TRANSISTOR

NPN SILICON TRANSISTOR

DESCRIPTION
The UTC 2SC2688 is designed for use in Color TV chroma output circuits.

FEATURES
* High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. (E-B reverse bias, C=2300pF) * Low Cre, High fT Cre 3.0 pF (VCB=30V) fT 50MHz (VCE=30V, IE=-10mA)

TO-126

*Pb-free plating product number: 2SC2688L

ORDERING INFORMATION
Order Number Normal Lead Free Plating 2SC2688-x-T60-A-K 2SC2688L-x-T60-A-K Package TO-126 Pin Assignment 1 2 3 E C B Packing Bulk

2SC2688L-x-T60-A-K

(1)Packing Type (2)Pin Assignment (3)Package Type (4)Rank (5)Lead Plating

(1) K: Bulk (2) refer to Pin Assignment (3) T60: TO-126 (4) x: refer to Classification of hFE (5) L: Lead Free Plating, Blank: Pb/Sn

www.unisonic.com.tw Copyright 2005 Unisonic Technologies Co., Ltd

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ABSOLUTE MAXIMUM RATING
PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current

NPN EPITAXIAL SILICON TRANSISTOR

RATINGS UNIT 300 V 300 V 5.0 V 200 mA Ta=25 1.25 W Total Power Dissipation PD TC=25 10 W Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ +150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.

SYMBOL VCBO VCEO VEBO IC

ELECTRICAL CHARACTERISTICS (Ta=25)

PARAMETER SYMBOL Collector Saturation Voltage VCE(SAT) Collector Cutoff Current ICBO Emitter Cutoff Current IEBO DC Current Gain hFE Gain Bandwidth Product fT Feedback Capacitance Cre Note 1. * Pulsed PW 350s, Duty Cycle 2% TEST CONDITIONS IC=20mA, IB=5.0mA VCB=200V, IE=0 VEB=5.0V, IC=0 VCE=10V, IC=10mA VCE=30V, IE=-10mA VCB=30V, IE=0, f=1.0MHz MIN TYP MAX 1.5 100 100 250 3 UNIT V nA nA MHz pF

40 50

80 80

CLASSIFICATION OF hFE
Rank Range N 40 ~ 80 M 60 ~ 120 L 100 ~ 200 K 16 ~ 250

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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Open Collector

NPN EPITAXIAL SILICON TRANSISTOR

BURNOUT TEST CIRCUIT BY DISCHARGE OF CAPACITOR

TEST CONDITION 1. E-B reverse bias 2.C=2300pF 3. Apply on shot pulse to T.U.T. (Transistor Under the Test) by SW. JUDGEMENT Reject; BVEBO waveform defect As a result if T.U.T. is not rejected, apply higher voltage to capacitor and test again.

SW. T.U.T VD C=2 300pF

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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TYPICAL CHARACTERISTICS (Ta=25)
Total Power Dissipation Vs . Ambinet Temperature

NPN EPITAXIAL SILICON TRANSISTOR

Total Power Dissipation, PD (W)

Total Power Dissipation, PD (W)

1.5

Total Power Dissipation Vs. Ambinet Temperature Free Air

10 8 6 4 2 0

Infinite Heat Sink

1.25 1.0

0.75 0.5

0.25 0 25 50 75 100 125 150 175 Ambient Temperature, Ta ()

25 50 75 100 125 150 Ambient Temperature, Ta ()

14
Collector Current, I C (mA)

Collector Current vs. Collector to Emitter Voltage 3.0 150A

Collector Current, IC (mA)

Collector Current vs. Collector to Emitter Voltage 30A

12 10 8 6 4 2

2.5 2.0 1.5 1.0 0.5 0 50 100 150 Collector TO Emitter Voltage, VCE (V) 20A IB=10A

100A IB =50A

0 2 4 6 8 10 12 14 Collector TO Emitter Voltage, VCE (V)

Collector Current, I C (mA)

DC Current Gain, h FE

Collector Current vs. Base to Emitter Voltage 70 VCE=10V 60 50 40 30 20 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Base to Emitter Voltage, VBE (V)

DC Current Gain vs. Collector Current VCE=10V 200 100 50 10 5 1 0.1

0.5 1 5 10 50 100 5001000 Collector Current, IC (mA)

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TYPICAL CHARACTERISTICS
Base Saturation Voltage, V BE (SAT) (V) Collector Saturation Voltage, VCE (SAT) (V)

NPN EPITAXIAL SILICON TRANSISTOR

10.0 5.0 1.0 0.5 0.1 0.05 0.01 0.1

IC=10I B VBE(SAT)

Gain Bandwidth Product, fT (MHz)

Base And Collector Saturation Voltage vs. Collector Current

Gain Banddwidth Product Vs . Emitter Current VCE=30V

200 100 50

VCE(SAT )

0.5 1 5 10 50 100 5001000 Collector Current, IC (mA)

10

-1

-5 -10 -50 -100 Emitter Current, I E (mA)

Feedback Capacitance, Cre (pF)

Feedback Capacitance vs.Collector to Base Voltage IE=0 f=1MHz

10 5

1 5 10 1 50 100 Collector to Base Voltage, VCB (V)

UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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