424

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. MTT-19, NO. 5, MAY 1971

The

Evenfor

and

Odd-Mode Lines

Capacitance

Parameters Substrate

Coupled

in Suspended
MEMBER,

JOHN I. SMITH,

IEEE

AbsfracfStatic capacitance characterizations are derived for coupled thin-iihn conductors in the suspended substrate geometry, which includes shielded microstrip as a special case. In particular, a satisfactory treatment of closely coupled and narrow lines is obtained where, because of the dominance of the edge singularity, (mesh point analyses are inadequate, The present work was carried through to meet the need in interactive design procedures for characterization of a general transmission geometry. For these procedures, algorithms are required that take little storage and are suitable for very rapid calculations. Capacitance formulas are derived from vsriationsf series based on conformal transformations, and these series are converted to easily evaluated iinite forms. Calculation of the even- and odd-mode fringing capacitances for coupled limes is made for iinite line widths assuming a periodic array of lines. The applicability of these capacitances to a single pair of lines and to tilte filter arrays has been checked experimentally. Routines for lower bound values of fringing capacitances are given. Upper bound formulations validate the accuracy of the lower bound calculations.

comparisons negligible lines, to A less useful find

show in practice,

that

the

error

is small, narrow by this For

and

quite wide [4]

even for very applied earlier correction In our

Iinewidths. author

alternative fringing substrates, necessary.

is to assume capacitance.

infinitely

an alternative odd-mode proved

thin-film to the

lines on ceramic has not

for line thickness applications

thicker metalizations found on the softer stripline substrates, an increase of approximately 3 percent in fringing capacitance values gave an improvement in the agreement ments. with This between increase calculated agrees with response stripline and values experiincrease found the calculated

thickness

of the symmetrical

by Getsinger [1] for infinitely wide lines. Finally it is noted that the use of static capacitances applies exactly at zero frequency only since propagation in microstrip and suspended substrate is known to be dispersive [5 ]-[~]. Measurements show that the velocity dis-

I. HE T
and parameters

INTRODUCTION
needed are of the from the to characterize the surge coupled impedances modes. and lines. in of These

microwave phase are

structures velocities found

persion is less than 0.3 of 1 percent per GHz for a SO-Q line in microstrip and certainly less than this in suspended between itance and substrate. Very satisfactory and circuits the agreement predictions mode results of is found perforexperiments characterizations velocity parameters.

normal odd-

parameters static sary ing and

even-mode The neces-

capacitances data are

of parallel in the to this

coupled paper

mance of microwave

to 10 GHz Specific

based on capacimpedance using the

presented using modified unsymmetrical are are the obtained, found there capacitances

terms

of fring[1] Total adding of to lines, edge, and inter-

of the TEM

capacitances, Cohn [2], and

notations apply when to stripline a parallel-plate

Getsinger

a general geometry. by array For gap to The a pair

inhomo-

geneous the which where, the to

capacitances fringing allows Capacitances

needed, periodic series.

component. of lines

in

use of Fourier

characterization given in this paper for coupled lines in suspended substrate are found in symposium papers by Smith [4], Johnson and Zysman [8], [9], and Alley 121 ]. A problem in the characterization of the capacitance in microstrip-type circuits comes about because of the small the gap between charge or and lines in some useful at slowly circuits where edges useful. field singularities much too conductor to be

in general,

is a different appropriate is used. width account. V. Short

at each each effect is, gap of

fringing the finite

capacitance width of line the into

dominate. diverge

Because of these singularities, converge

series solutions

action cedure for rapid An two which microstrip with

of fields are given

across taken

of a line Details listings

therefore, proin the for on the here These

approximately

of this

in Section

of programs

calculation of

of the capacitances the probable to based, of the and

are found

appendixes. assessment coupled the the lines, theoretical an is array of error lines in [3]. as opposed are by

Similar remarks apply also to finite difference solutions [1o]- [12] of Laplaces equation or matrix solutions of the system integral equations for which the very fine mesh required for small gaps and the resulting immoderately large system of equations to be solved lead to difficulties paper, in both accuracy are absorbed problems whose and convergence. into capacitance solutions In this terms singularities

calculations case by data given

obtained results Weiss found

comparison Bryant

for homogeneous II.

are known.

UPPER BOUND ON ODD-MODE

CAPACITANCE

Manuscript received April 30, 1970; revised November 6, 1970. This work was supported under Contract DAHC-60-69-C-OO08. Major portions of this paper were originally presented at the 1969 IEEE International Microwave Symposium, Dallas, Tex., M~y 5-7. The author is with Bell Telephone Laboratories, Inc., Whlppany, N. J. 07981.

One cell of a periodic array of lines is shown in Fig. 1. Electric walls at x = O and x = T represent the odd-mode symmetry in a cell. The conductor extends between x=0 and x = T 0 and is held at 1 V. The total space

SMITH : EVEN- AND ODD-MODl? CAPACITANCE PARAMETERS

425

is divided trial bound top that

into

three in

regions energy

also shown solution The

in Fig. for an

1. The upper the

function airdielectric

a variational interface.

on the system this interface

is the potential assumption wall. This

along

is, made corresponds

is a magnetic

to the quite reasonable physical equivalent of a field line on the interface going straight across between the conductors. With this approximation it is possible to find a closed expression for the potential across the gap. This potential is then matched to the Fourier expansions of the mining tion, itance potentials throughout to note that, the higher for the system, thus deterIt is Because terms by from When the an expansion factor The a (2). of the edge singularity, higlher rapid in region region harmonic 3, weighted by term 3 is known. is dominate series (2). To obtain for the capacitance (K+ 1)/2, capacitance CT in convergence, term all of the coefficients the convergence is assured; except of these expansions.

Fig.

1.

Geometry

of one cell of an array

of coupled

lines.

very important

also because of the assumpseries for capacfor terms in this series can be

of the resulting a factor,

is subtracted

identified,

to an expansion

classical stripline problem solvable another way in closed form. The singularities in the inhomogeneous problem are thus mopped up in the homogeneous problem whose solution is already known, Expressions for the interface potential
the in capacitance region 3, are CT, which found in represents terms The 1. The the of elliptic required in expansion

CT is returned

to series (2), the result

4,(x,
energy

Y2) and stored by PF(m) = ~ K{

where coth mdl coth mg2~

K tanh mgl +

functions transforms region

conformal are Fig. given

transformations. in Appendix

potential

3 of

1 is also given

by the Fourier

7rm . 2 sinhz mdl(l/K The limiting form

~

tanh mgl cclth mall) is m > M E 3/all. and The decrease

(5)

of this function
2TKm
~2ntd1

where are

g9 = y, yz. The by coefficients by

coefficients known in similar matching

pm in this interface expansions the potential

expansion at in regions and its

PF(m)

(6) with

determined

the

potential

1+1/K Since with the m coefficients index, assures by the rapid

y = yt. The 1 and normal

pm are finite exponential convergence.

2 are found derivative

increasing

decrease

of ~F(m) capacitance

at the interface in region

y = yl and by e,quatpotential from the a variaFor

ing the potential at y = yz.

2 to the interface derived yielding of the

C~/C~ is given

Components of the electric field, potentials, are squared and summed tional series i CV2 for V= 1, this series gives c = ~ Eo =l?
m ,,, $,,

CT
. Co

4F(1, F(l,

a)

(7)
a)

the

energy

system.

Elliptic defined which

integral in the

F and

the
pm

parameters interface found

a and potential is also

a are from in

Appendix coefficients 1. Typically,

1. The
are

given evaluated

mp%2 tanh mgl coth mg, coth md~

+

Appendix (4) are upper III.

one to five terms (4)

of the sum in

sufficient,

so that

is an easily for small gaps.

K +
{

bound

on the capacitance

l/K

tanh mgl coth mdl } LOWER BOUND ON ODD-MODE integral [14] for a lower bound on CAPACITANCE capacitance is mp.z ,.. . (l/A) coth mgj }
.. :[;

+ ~

_l~ -,,

An [13], (2)

coth mdl + { where

g2=Y3-Y2

l/K

+ tanh mgl coth mdl

~m.md P(Z) T P(X)

dx 2

(8)

dx

o d1=y2yl gl = yl and K is the substrate dielectric constant. (3) ~~~~d is the conductor assumed trial charge charge density function potential corresponding to an density function p. Both this and the conductor potential are

426 expandable in the Fourier series over the region (O, T):

IEEE TRANSACTIONS ONMICROW.4VE THEORY ANOTECHNIQUl?S, 1971 ~A~

(9)
1,3,5, . . .

+C.nd(x)

~ *m 1,3,5, . . .

sin mx.
integral

(10)
Fig. 2.

Geometry

U
e A

T-.9 Y2
/

.
the
by

for homogeneous

odd-mode

problem.

On using
one finds

these

expansions E(I c

in

variational

(8),

~;,

, ,; ,,,

+.P~
...

(11)

Fourier coefficients tion p(x) from

are obtained r[z

for

density

func-

where Q is the conductor charge. ~~ are related to charge coefficients

Greens here, function. since it has We need not given been in

Potential coefficients pm by an appropriate

this relationship essentials by Coefficients most

pm.

p(%) sin wzx dx.

(18)

n-os

derive

pm are used in the series for capacitance;

we

Yamashita
considered

[15].
here,

When
one

applied

to

the

periodic

case

have
trial

tacitly
function.

assumed
Using

that
this

p(x) trial

given function,

(17) a very

is a good rapidly

obtains

*m=

(1 +

K tanh mgl coth w&)pm

(12) m{ coth mg~(l + K tanh mgl coth mall) + K(K

tanh tigl + coth W3dl) }

As where

in

the for

previous small of gaps (11)

development higher is too slow to

for be

an upper dominate, useful.

bound, the Conver-

convergent co ~

sum

for

capacitance

is found:

harmonics

convergence

gence term, The Co F ~

is obtained a limiting is

by value

subtracting

from

(11),

term

by m.

= ;@k,,3,5,...

Pm?~+&$:

(19)
a singularity is given in at x =6 that of (18) II. Appendix

of the product

~~pw

for large

Integral must for the

(18) for pm contains This detail Fourier IV. coefficients

result =

be removed.

and the evaluation

~ pm, p~f(m) 1,3,5,. . . m p~z tanh m(gl + dl) 2

11,3,5,...

2 +~ 2Q2 K + where

LOWER BOUND ON EVEN-MODE CAPACITANCE

density of function a representative is obtained by a

2m

(13)

trial

charge mapping

conformal

homogeneous

geometry.

The

geometry

chosen

is that

of Fig.

2, but

1 + K tanh mgl coth mdl PF(m) = coth mg~(l

+

1 tanh m(gl + all), (14)

K tanh mgl coth mall) + K(K

K+l tanh mgl + coth mall)

As can sum

in

series

(4), with

the index

functions m so that for form in

charge

PF (m)
the first ill=3/dl. as follows. Fig. 2.

decrease sum The If

pm in

ex(13)

ponentially can

in

with the short-circuit sidewalls replaced by opencircuit walls. Fourier coefficients pm of the trial function
and using total the charge Fourier integral Q are series (8), worked for one has out in Appendix and potential 1 I. On in the charge

be terminated, be found the

coefficients

essentially in closed system

of the

second
are Fig. the 2

Consider
Fourier

shown

variational

distribution

and

CT is the system

capacitance,

then

(20)
This is reformulated into a rapidly convergent sum by

The
are

p(x) capacitance CT and the charge distribution readily found from conformal mappings. Their mappings are given in Appendix I I from which we find Q=%=

subtracting, term by term, the series representing the capacitance for the homogeneous problem, weighted by an appropriate factor. When this capacitance is added, outside the sum, the result is _.
c
co

4F(1, co F(l,

Cos +) (16) sin~) 1 k~=(~ ~

2;

,,$ . . . PmPF(m) 2 + K+l ( ~; -g+)+w% 0

2
p(x) =

(17)

aF (1, sin ~) d

1 (l/a)

sn (x, k)

21)

SMITH : EVEN- AND ODD-MODE CAPACITANCE PARAMETERS

427

where 1 +Ktanhmglcothmdl PF(m) = m ~coth mgj(l + K tanh mgl coth mall) + K(K tanh mgl + coth mall)} 1 tanhm(gl+dl) . ~ K+l (22)

Here

even-

and

odd-mode example,

capacitances are

for

the

end

conductor

. q
is

2cp

T29
+
g2

T28 (23)
gI i&/k

in Fig.

3, for

co; = 2CP +

2cf: + 2cf
+ 2cf

(28) (29]
capaccapacplanes

the parallel-plate
typically a similar for upper in for was sum rapid bound an the earlier

capacitance. in one to five in

The terms. the

sum This

in

(2 1) termitogether gives and detrial even In the units by

con = 2CP + 2cf:

where itance itance is Cff is the asymptotic for a large gap. The between a conductor

nates with

sum,

found and on

previous calculation

section, of evenwas good in the

value of fringing total parallel-plate and the two ground

formulas odd-mode An scribed function mode

accurate even-mode paper along

capacitance

of a general [4]. the

geometry. capacitance There, interface a

potential as = was

eljw eow 2CP = G2 + (GI + D1/K)

of picofarads per centimeter

(30)
used here, ~.

chosen

Y3(~) The system energy parameters

b(l

effi@J). by choice potential.

(24)
of the two

is given

minimized a and

co =

10/(36r)

pF/cm.

(31)

variational

b in this

Characteristic mode is found inductance.

impedance

and phase velocity from

in either and Cl,

using odd- or even-mode inductance is found

capacitance capacitance

V.

USE

OF FRINGING

CAPACITANCES

Values for the fringing capacitances may be calculated using the two function subprograms given in the appendixes. These CFODD(W, and CFEVEN(W, G, K, Gl, Dl, G2) = Cf;. (26) routines are
IX,

the capacitance of the system with moved [16 ][18 ]. The velocity ratio, divided by the velocity of light

the dielectric rethe phase velocity

in air, is

G, K, Gl,

G2) = Cfo

(25)
and the impedance

v/vo = ~cJc~
is

=
(32)

The input parameters are listed in Table I and illustrated in Fig. 3. The condition G1 = O defines microstrip = G2 defines a lines. The condition K = 1 and G1 +Dl
balanced puts farads within of units. stripline,l Cfo = CFODD per the centimeter. programs Units and Input and may chosen for program call are are any outpicoCf, = CFEVEN variables be in

In This

many

problems odd-

the and

quantity even-mode gap =

of interest fringing AC,

is the

differ-

ence

between difference

capacitance.

is the AC

capacitance Cfo Cf;.

(34)

normalized set

consistent

Consider impedance following

as an example parameters:

the calculation in Fig.

of odd-mode 3 having the

K is the relative To find total even-

dielectric

constant components

of the subto of fring-

for the end conductor

strate. ground,

or odd-mode

capacitance

one adds the appropriate

w = 0.020
G = 0.004

G1=O

ing capacitance to the parallel-plate component 2 CP. The total odd-mode capacitance to ground for the center conductor in Fig. 3 isz coo = 2CP iIn calculating or for to the the total end capacitance lines in Fig. edge

DI

= 0.024

K=lo
From values: CFOD D one finds

G2 = 0.100.
the fringing capacitance

4cfo.
for unequally must the 3, care of the

(27)
spaced be taken The

lines, to add fringing

Cf;

= 0.656 0.131

G = 0.004 G = 0.004 G=w

K := 10
K:=l

parallel-plate at each

component

appropriate

Cf: =
Cf

capacitance

conductor.

= 0.214

K = 10 K = 1.
found from (30), is

1 For a stripline problem where the conductors are supported by a homogeneous dielectric, values of capacitances obtained from the by the relative dielectric programs using K = 1 should be multiplied constant of the supporting medium. Z The factors of two in these formulas are carryovers from the notation established for symmetrical stripline [1], [2]. Our 2 Cc is still the total parallel-plate capacitance of a single conductor.

Cf = 0.040
The parallel-plate

G=co

capacitance,

2CP = 0.755
2CP = 0.091

K=1O K=l

428

LEEE TRANSACTIONS MICROWAVETHEORYAND TECHNIQUES, AY 1971 ON M

Lo .

~ ,.,.,:,,,. . ,,. .., ... .., ,, . . ,,,,,,..,...:.. .

l+G
.,, . .: : ,, ., :,, , K -

LW4
,,

1
:,, ,.

2
DI :, E u > ?.4 * v

.8

/G1 I

.6 -

W=.1,

GI=.088,

01=.048, K=IO

G2=.114

.2 -

UPPER

BOUNO

Fig. 3.

Capacitance

model for coupled lines.

\~ow~~

B()ND

TABLE

o
Fig. 4.

.2

.4 Gap-cm

.6

INPUT VARIABLES

Odd-mode

fringing

capacitance

w
: G1 D1 G2

Circuit Iinewidth Conductor gap to adjacent line Relative dielectric constant of substrate G;ound plane to diel~ctric support spacing Dlelectnc support thickness Circuit to top ground plane spacing

.15

E : .: s

lo

and total

odd-mode

capacitances,

using K=IO K=l.

(29), is

.05

Co; = 2.49.5
CO; = 0.432
On

1[
~
Even-mode fringing TABLE
COUPLED

+
.8

1.0

(K=

10).

~UPPER

BOUND

kLOWER

BouND

W=.1, GI=.088, K=IO

01=.048,

G2=.114

Lo
capacitance (K= 10).

Gap-cm

using these values of capacitance in (32) and we find odd-mode velocity and impedance as V/VO = 0.416 Z = 32.1 VI.
A

(33),

Fig. 5.

II

Q.

PAIR IN MICROSTRIP

CONCLUSIONS upper and lower bounds on

W/Dl

CK Odd Bryant and Smith Weiss [3] 114.2 143.3 164.7 182.3 197.5 211.0 223.4 234.9 256.2 276.2 295.4 313.9 332.0 349.9 K=1O.O; 120.5 150.1 170.6 187.0 201.0 213.6 225.3 236.2 256.9 276.6 295.7 314..5 333.0 351.5

CR Even Bryant and Smith Weiss [3] 51.8 64.0 74.6 84.7 94.3 103.7 113.0 122.1 140.2 158.2 176.1 193.8 211.6 229.1

comparison

between fringing

0.1

the odd-mode

capacitance

as a function

of line

gap is shown in Fig. 4, and a similar comparison for the even mode is shown in Fig. 5. These comparisons were made for O.l-cm (80-fl) linewidth. For very narrow lines with large gaps (ZO >100 Q), the upper bound calculations fail. Lower bound values have, however, given excellent prediction of the performance of circuits having linewidths and gaps from 0.001 cm and up. Published comparisons are given in [4], [8], [9], and [21 ]. For a pair of lines, as distinct from an array of lines, there is some error in the calculations due to the slightly different interaction of fringing fields across the width of a line. This error is less than that obtained when infinitely wide lines are assumed in the calculations. Comparisons between the capacitances obtained here for a pair of lines on microstrip and the tabulations of Bryant and Weiss, which were obtained by numerical solution of the system integral equations for two are shown in Table II. The function subprograms sented in this paper use lower bound lines, pre-

0.2 0.3
0.4 ::: 0.7 0.8 1.0 1.2 1.4 1.6 :::

54.5 66.5 76.8

86.6 96.0 105.3 114.5 123.6 141.8 159.8 177.8 195.8 213.7 231.6

Note: G/Dl=O.2;

G1 =0; G2= W.

which are adequate in view of the very close calculated bounds obtained. These programs were designed for interactive machine-aided design.
APPENDIX I

In tial which

this

appendix for

we

find

the

capacitance top region

and in walls.

potenFig. 1, The

distribution is enclosed

region electric

3, the and

formulations,

by

magnetic

SMITH : EVEN- AND ODD-MODE CAPACITANCE PARAMETERS

429

Y
m \
\ \ \ \ n -F(l,k) ---F ~/f//4 //////

iY
q .
$ + ---s X. D +(1, k) x F (I, k) z PLANE

m /,,/,,,/,,,,, I

////////////,

q F(l,k) I

I I

---y7A7ii7zy-Jp k) t.sn(z,k) F(l,k)

z PLANE x

-F!l,

t = sn

(z,k)

I
-k a=sn(xo, p= F(+, k) a)

PLANE

~m...-----r

-;

1s & /--------qp?zim -a
t _ P1 ANE a +a=sn(xo, k) k P PLANE _ m,

A
n ./////////. I I
1 +1

,////////

f t

P F(i,
1

,q a) P PLANE ! : : t />s

F(l,

SINa)

,*
cos

r $,,,,,,,,,>,,,,,,, -F(l,

. a)

r%mmz

VOLT Z77Z7ZJ

;s F(l,f3)

a)
COS a = ka

F( I,COS

Fig.

6.

Conformal

mappings

for odd-mode

homogeneous

problem.

Fig. 7.

Conformal

mappings

for even-mode

homogeneous

problem.

z-plane the

geometry of the

for

this

region polygon

is shown equation to

in~Fig. [19 ]

6. A relates half t

The

imaginary

part

of P is given

by, an integral

SchwarzChristoffel interior This plane. equation

differential z-plane is 1

the ~upper

dz
%= This, when integrated,
Z =

(35)
<(1 yields P) (1 k%)

which

can be integrated

[20, p. 134] yielding

Im

P = F(I,

a)

F {(EY2, )

F(t, k),
incomplete function

t = sn(z, k).
elliptic [19]. integral; Parameter sn(z,

(36)
k)

and F
+(x) =

F(t, is

k) is the
the

first

sine-amplitude

k is

{(

sn

(x, k)

1/2

, CLf
(41) F(I, a)

1 sn (xo, ~ )}

determined

by the transcendental
F(1> k) . 2G2

equation (37)

APPENDIX

11

F(l, where k= ~1 k2. The upper half t plane

plate mation geometry, also

k)

W+G

in

this

appendix

the capacitance

and

charge

distri-

is transformed in Fig.

into 6,, by the

a paralleltransfor-

bution are found, for the even-mode homogeneous region. A z-plane representation of this region is shown in Fig. 7. The transformation

shown

t = sn (z, k) p = F(t/a,
a), t = asn (p, a).
a capacitance (38) maps half the interior of the z-plane polygon to the

(42)
upper

From

this

one

determines

t plane.

A second

transformation

cl
Ell

4F(1, a) a = 41 F(l, a)
yields along the interface Imp $(p)= l-. is

a,

a = sn

(*o,

k)

(39)

~=
a solvable

F(:cOsa)$ 43) Cosa=ka

uniform field problem. The capacitance
=

and

a potential

(40) F(l, a)

cl
EIJ

4F(1, F(I,

COS a)

(44) sin a)

430
FUNCTION C?83D(!JX, Gx, EK, GIX, DIX, G2X) C4LL CFEO(l, CF, WX, GX, EK, GIX, DIX, 62X) CF@DD:CF RETURN: END FUNCTION CFEVEV(WX, GX, I?K, GIX, DIX, G2X) CALL CFE9(2, CF, WX, GX, EK, GIX, D1X,62X) CFIIVEN=CF RETURN: END SUBROUTINE CFEE(IC, CF, WX, GX, EK, GIX, 1)1 X, 62X) DIblENS16~ V(30) RE4L K,KP T4NH(x)=( l.ExP(-2. *x))/ (1. +ExP(-2. *X) ); COTH(X)=l. GN(GI)z I.+ K* TANH(G1)*COTH(D1) GD(Gl)=CBTH( G2)+K*C8TH( Dl)+K*TANH( Gl)*(K+CCTH( m)* PHI(Gl) =GN(GI) /GD(Gl)-TANH( Gl+Dl)/(l. +K) PI:3. 141593 WO=WX; Go=Gx; G1 fj=GIX:Dl !3=ill X; G20=G2X:K=EK IF(Wt)>3. *Dl O) WO=3. *D18 IF(G2@>s. *D IO) C2.0=6. *oli3 R:2. *( Gl&D1O)/(WO+GE) X=-. O979:DX=.1 2 X= X+ DX:IF(X<O. ) G6 TE 16 IF(xc.999998) (30 TO 7 X: X- DX; DX=DX/5.: IF(I) X>l. E-6) GD T@ 2 X=.999998 :G0=4. *( GINt DIO)*ELPl (X)/P I- WO; GO 10 3 7 Y= W?RT(I .-X*X) IF(y<.9~qQ9g) GO TO 17 16 IF(IC>l) GO TO 4 X= O.:G21 TO 3 4 X=. 002:YZSQRT( l.X* X): 17 CaNTINUE Rl=ELPl(Y)/ELPl (x)
IF(AgS(R-RI)<I.E-Z,) GO

IEEE TRANSACTIONS ON MICROWAVE THWRl

AND TECHNIQUES, MAY 1971

JACOB14N SINE AMPLITUDE FUNCTION FUNCTION SN(XX, KX) REAL K, KX, KN(IO) X= XX: K=KX UN= X: XZSQRT(l .- K* K); KN(I)= (l. -X)/(1.+X) IF(KN(I )-1.) 11, ID,1O ~~ ~#j. -fXP(-2. *UN) )/( 1.+ EXP(-2. *UN)) 11

/T4NH(X) CETH(Dl))

N=l -K N(N)* KN(N)) KN(K+l)=(l .-x)/( 1.+x) :IF(KN(N)-I .E-8) 4 UN= UN/( 1.+ KN( N)) !4:4+1 GO T3 5 3 UY=UN/(l. +KN(N+l)) S~51N( UN) IF(N-1) 8,8,9 9 CONTINUE DO 6 1=2, N J, N- I+l:S=( l.+ KN(J))*S/( 1.+ XN(J)*S*S) 6 CONTINUE

5 X, SQRT(I.

3 ,4,4

W@, (GIHDID)*P

I/

ELPI(Y)-GO:GO

Tg

TO

IF(R-R1) 2,3,5 5 XZX-OX: rJX, EIX/3.

:GFJ Te 2 GB)

3 XPZY, X~:ELPl (K P):~=2. 4zSN(X0, KP)

Y:l. IF(Ic>I) XZY*A:i EN, ~PI YzXP

*X M/ PI; X8: WO*XN/(Wfi

FIRST CBMPLETE ELLIPTIC INTGRAL 7!JNCT19N ELP1 (4X) P5%L 1(, KP K=4X:KPZI. -K*K AO=l.336?944; Al=. 1119723: A2:.07252g6 I??:.5: BI=.1213478 ;B2=.02B8729 17( K<.99999) GO T9 1 ELPI ,.5*AL@G(16. /KP) GO TO 2 1 CONTINUE ELPl=(E@?l *KP+B2*KP* KP)*ALOG( 1./ KP)+A&Al*KP+A2* 2 RETURN END

KP*KP

Fig. 9.
(x); cTz4. *E/EN 0/WO: D1=W*31 o/it@: 32z W*3?t.,Jt

Program

listing;

elliptic

functions.

isi RTi I.-X*x)

(y): EzELp]

W=PI* Wfj/( w!3t Gg); fi=#GO/ti& GIEw*GI W0=W:130= G: Ii10=Gl; DI #J:DI; (320=G2 N=29: VJ=N-l: F12X@/FL04T( NJ) DO ~o J: I,NJ X: H* FLOAT(J-1) s=s N(x, KP):Y,2. 20 v(J) =5 QRT((1 *K P-l.+ .-( (1. -K P)* /(1.

To

evaluate Write

(46),

the

singularity

at

x = XO must

be re-

moved.

FLeJAT(Ic) -(s/ A)**22))

cO=o. ?u:(-l.

)**Ic

Y*s)**2)

f($) Cos ;

= Cos

:
f

?(x) + g(fi)

(49)

DO lil-oz IC,200,2 u,-lJ 4Mz FLOAT(Y) :?l=A%51E: Dl=A%D1O; G2, AwU0 PHM=PHI( Gl); IF(ABS(PHM/( 1.+1() )<.00001) GO TO 15 CA= COS(Am X6/F) PM, (1 .- CrIl)+4. *V(r4J)*( COS(4hW(Xa-H) /F: -CM) JJ= N-3 DO 30 J:2. JJ. z X. H*~L8ATt J-i): YZX+H PW2PMt4. *V(J) *( COS(4?k X/ F)- CM)+2. *V(J+l) *( C3S(4WY/F) 30 CO VT INIJE PM=4*Fx CW+H*PM/3.: P1=8. *P* U/( PI. A* EN) CO= COt Pm PH%PM/Ai 14 CaNTINUE

g(%) = Then
-Cti)
Pm =

(
8

Cos ~

Cos

)
Q

?(x).

(50)

8 ~aF(l,

m7r mxO Cos Cos sin a) 2 fo s

+

o Y(X) dx

cE2c@PI/(2. *c T*c T) IF(Ic>l) GB To ;2 C0=CC+2. /((l .+ K)* CT):Ii O T@ 11 12 Cg, CW2. *(1. /C T-( G1@t Dl0) /(2. 11 co=l. /c9 CF=lO. *( CO- CP)/(4. RETIJRN: END *35. *PI)

fraF(l,

sin

a)

mw Cos 20 s

g(X)

dx.

(51)

*P I))/(l.+K)+

Wti/(CP*(

WHGO))

The

first

integral
COS a)

is another
mxfi Cos

elliptic
m7r Cos

function,

giving

Fig. 8.

Program listing for even- and odd-mode fringing

capacitance.

827(1,
Pm =

mF(l, and the ~(f) charge . density function 1

sin a) { 1

sin a)

fz

is sn (x, k) sn function (z, ~

_2.
aF(l,

(l/a) trial

1
are

1/2

+ (45)
. by (46) The g(xo) ing ing integral = O, all the in in

7ra,F(l,

sin a)

mr Cos 20

0 g(x)

dx.

(52)

(52) the

is evaluated have odd-mode

numerically, been case removed. are m and charge: similar. n and

and

since

Fourier

coefficients

for

this

given

singularities between capacitance Cos +)

~m=
7raF(l,

8
sin a)

mr Cos
20

s
.

Mappings

Replacp and followq

O Y(%) COS;

dx

boundary for

points walls, and

in Fig,

7 by short-circuit

one arrives

at the

where r(x) =

formulas

1 sn2 (z, k)
(47)

CT

(1/a2)

sn2 (x, k)
(48)

4F(1, F(l, Co

cos+=a sin ~) 2 1 d k sn2 (x, k) . (l/a) sn2 (x, k)

(53)

f=

227(1,

Cos a) T

p(x)

= aF(l,
sin+)

(54)

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. MTT-

19, NO.
[8]

~, MAY

1971

431

APPENDIX Figs. rapid 8 and calculations 9 show of short the

111 listings of programs for

fringing

capacitances.

ACKNOWLEDGMENT The W. author wishes of Bell during paper. to express his appreciation Laboratories long to for gestation were also W. his

Mumford

Telephone the

encouragement period made before of this by

somewhat

Constructive

suggestions and of the

R. E. Fisher, during the

A. K. Johnson, preparation

G. I. Zysman manuscript.

and

REFERENCES [1] W. j. Getsinger, Coupled rectangular bars between parallel plates, IRE Trans. Microwave Theory Tech., vol. MTT-10, Jan. 1962, pp. 65-72. [2] S. B. Cohn, Shielded coupled-strip transmission line, IEEE Tram. Microwave Theory Tech., vol. MTT-3, Oct. 1955, pp.

29-38. [3] T. G. Bryant and J. A. Weiss, Parameters of microstrip transmission lines and of coupled pairs of microstrip lines, IEEE
Trans. Microwave Theory Tech., vol. MTT-16, Dec. 1968, pp. 1021-1027. [4] J. I. Smith, The even and odd mode capacitance parameters for Int. Microcoupled lines in suspended substrate, in 1969 IEEE wave Syrnp. Dig., pp. 324328. [5] G. 1. Zysman and D. Varon, Wave propagation in microstrip IEEE Int. Miwowave Symfi. Dig., transmission lines, in 1969

D. Mass6, and R. A. Pucel, Frequency depenInt. Microwave of microstrip, in 1968 IEEE .$ytn~. Dig., pp. 110-119. [7] R. Troughton, Measurement techniques in microstrip, Electron. Lett., vol. 5, Jan. 23, 1969, pp. 25-26. dent behavior

[6] ~~;-fiartwig,

A. K. Johnson and G. I. Zysman, Coupled transmission line networks in an inhomogeneous dielectric medium, in 1969 IEEE Int. Microwave Symp. Dig., pp. 329-337. [9] G. I. Zysman ?nd A. K. Johnson, Coupled transmission line Trans. networks in an mhomogeneous dielectric medium, IEEE Microwave Theory Tech., vol. MTT-17, Oct. 1969, pp. 753-759. [10] H. E. Green, The numerical solution of some important transTrans. Microwave Theory Tech., mission-line problems, IEEE vol. MTT-13, Sept. 1965, pp. 676692. in improving finite dif[11] D. H. Sinnot~, The use of interpolation Trans. ference solutlons of TEM mode structures, IEEE Microwave Tkeo~y Tech., vol. MTT-17, Jan. 1969, pp. 20-28. [12] Y. M. Hill. N. O. Reckord. and D. R. Wirmer. A general method for obtaining impeda~ce and coupling cha~acteri=tics of practical microstrip and triplate transmission line configuraJ. Res. Develop., vol. 13? May 1969, pp. 314-322. tions, IBM Field Theory of Gwzded Waves. New York: [13] R. E, Collin, McGraw-Hill, 1960, ch. 4. method for the analy[14] E. Yamashita and R. Mittra, Variational sis of microstrip lines, IEEE Trans. Microwave Theory Tech., vol. MTT-16, Apr. 1968, pp. 251256. [15] E. Yamashita, Variational method for the analysis of microstrip-like transmission lines, IEEE Trans. Mic~owave Theory Tech., vol. MTT-16, Aug. 1968, pp. 529-535. [16] H. A. Wheeler, Transmission-line m-oDerties of Darallel strios separated by a dielectric sheet, IEEE Trans. ibfi~~owave Theo>y Tech., vol. MTT-13, Mar. 1965, pp. 172-185. [17] H. E. Brenner, Numerical solution of TEM-line problems involving inhomogeneous media, IEEE Trans. Microwave Theo~y Tech. (Corresp.), vol. MTT-15, Aug. 1967,. pp. 485-487. [18] H E. Stinehelfer, S$, ~(An accurate calculation of uniform microTrans. Microwave Theory Tech., st~p transmission hnes, IEEE VOI. MTT-16, July 1968, pp. 439444. [19] K. J. Binns and P. J. Lawrenson, Analysis and Computation of Electric and Magnetic FMd Problems. New York: Pergamon, 1963, ch. 9. [20] A. Eagle, The Elliptu Functions as They Should Be. Cambridge, England: Galloway and Porter, 1958. [21]G. D. Alley, Interdigital capacitors for use in lumped-element Int. Microaqave microwave integrated circuits, in 1970 IEEE Symp. Dig., pp. 7-13.

A Design Using

Method Equivalent

for

Meander-Line

Networks

Circuit

Transformations
MEMBER, IEEE

RISABURO SATO, SENIOR

Absfracf-Msny types of coupled structures are used to design microwave filters and equalizers. One such structure is the array of coupled parallel commensurate conductors called a meander line. There are several analysis techniques that may be used to find the equivalent circuit of a meander line. However, these do not provide exact design equations. In tlds paper, meander-line networks are analyzed and synthesized using the graph-transformation technique. The equivalent circuits of one- and two-port meander-line

networks will be developed by using the transformation method, and it will be shown that meander-line networks can be easily designed by using the electronic computer. 1. INTRODUCTION
ANY M TYPES

design

of coupled structures are used to microwave filters and equalizers. One

hlanuscript received May 21, 1970; revised November 23, 1970. The author was with Stanford Research Institute, Menlo Park, Calif., on leave from Tohoku University. He is now with Tohoku University, Sendai, Japan.

such structure is the array of coupled parallel commensurate conductors called a meander line, which is shown in Fig. 1. The meander line may be either between ground planes, or above a single ground plane,