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Progress In Electromagnetics Research Symposium Proceedings, Marrakesh, Morocco, Mar. 20–23, 2011 1731

Comparative Study of RF Dual-band-pass Filter

L. Bousbia, M. Mabrouk, and A. Ghazel CIRTACOM-SUPCOM-ISETCOM de Tunis Cit´e Technologique des Communications, Raoued 2088, Tunisia

AbstractIn this paper, the performances of RF dual-band-pass filter are studied using ADS and HFSS simulators. Comparative studies between both simulators results are considered. Based on such comparison, the reflection coefficient magnitude S 11 result from ADS simulation is of 32.0 dB and is better than the obtained one from HFSS simulation which is of 8.0 dB. Insertion loss less than 0.4 dB from ADS simulator result. However the insertion losses obtained by HFSS simulation are about 0.9 dB. The template filter obtained with both methods is not substantially different in general.

1. INTRODUCTION

The demand for advanced filtering especially multi-band RF filters has significantly increased with the development of wireless communications standards and telecommunications equipments. Mi- crostrip planar technology is the one of the suitable techniques to the design of RF filters [1]. Advancements in wireless communications require RF circuits with a dual band-pass operating. Therefore, the band pass filter is necessary to generate two or more transmission frequency bands [2]. Low insertion losses, low reflected power and small size for high level integration are essential crite- ria for satisfying band pass filtering [2, 3]. For designing this kind of filters, several techniques and methodologies are available. Nowadays, the trend is to take advantage of the accessible full wave electromagnetic (EM) simulators, which can provide complete analyses of physical structure of fil- ters [2]. Full wave electromagnetic EM simulators such ADS or HFSS are used to solve practical and complex design problems [2]. The first simulator is based on the method of Moments (mo- mentum) which converts the functional expressions to matrix equations. Momentum is numerical method which solves Maxwell’s equation for the design. The MOM is a numerical technique that can be used to solve differential and integral equations. It is mainly used for solution of integral equations in EM problems [3]. The second simulator uses Finite Elements Method (FEM) which is mathematically used for finding approximate solution of partial differential equations as well as of integral equations. The FEM is a general numerical technique to find the approximate solutions to the boundary value problems. In the application of FEM, the entire volume is divided into sub-volumes in which the unknown functions are represented by simple interpolating functions [4]. This method splits surface into sub-regions most often triangular. The structure contains N number of triangle vertices of in the inner limits; we obtain a set of N equations with N variables. Both methods are the most widely used and the most often cited for filters simulation. In this paper, Comparison between both (ADS and HFSS) simulators results is made. The design process, as explained in Section 3, relies on simulations carried out using Advanced Design System (ADS) of Agilent and HFSS of ANSOFT [4].

2. DESIGN OF MICROSTRIP FILTER

The studied filter is composed of two ring-resonators loaded with two open-stubs. The used method is consisting of adding a half-wave length (λ/2) microstrip-line with an open-stub [5]. The principle of method is based on a total length of λ/2 for all of the sides of each ring resonator. Figure 1 illustrates the principle of the studied filter. Figure 2 shows the physical layout of the dual band pass filter using uniform microstrip lines. This filter consists of two microstrip open loops. Two open circuited stubs are attached at the center of the respective microstrip lines [5]. The total length of the resonator is around a half wave length (λ/2). The design parameters dimensions are chosen as following and illustrated below:

W = 1.2 mm; W 1 = 1.5 mm; W 2 = 0.9 mm; L = 11.2 mm; L 1 = 6.7 mm ; g 1 = g 2 = 0.3 mm. The structures of open loop resonators filter with center frequency 1.68 GHz and 2.81 GHz are designed on RT/duroid 6006 substrate with a thickness H = 0.635 mm and a relative dielectric constant ε r = 6.15.

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PIERS Proceedings, Marrakesh, MOROCCO, March 20–23, 2011

λ/2
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Figure 1: Principle of ring resonator design.

Figure 2: Topology of the studied dual band filter.

Ansoft Corporati on

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Figure 3: HFSS Simulated S 21 and S 11 parameters for the studied dual band filter.

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Figure 4: ADS Simulated S 21 and S 11 parameters for the studied dual band filter.

3. NUMERCAL STUDY: ADS AND HFSS SIMULATIONS

The full wave simulators are now inescapable in the design cycle of modern RF and microwave circuits. These simulators are making possible the design of several complex architectures operating in high frequency bands. The performances of the dual band RF filter have been studied using two full wave simulators, ADS and HFSS. The obtained S-parameters using both simulators are shown in Figure 3 and Figure 4 respectively. The obtained characteristics of our studied filter with both methods are not substantially differ-

Progress In Electromagnetics Research Symposium Proceedings, Marrakesh, Morocco, Mar. 20–23, 2011 1733

ent in overall. We can note that the obtained ADS simulated S -parameters are better than those obtained by HFSS. The major difference between simulation trials is the return loss values at the resonant frequencies. From the reflection magnitude we can deduce that S 11 results from ADS sim- ulation is of 32.0 dB and is better than the obtained one from HFSS simulation which is of 8.0 dB. The S 21 obtained result from ADS simulator shows that the proposed filter has an insertion loss of 0.18 dB and 0.3 dB at the first resonant frequency 1.68 GHz, and the second resonant frequency 2.81 GHz respectively. However the insertion losses obtained by HFSS simulation are about 0.4 dB and 0.9 dB respectively therefore they are not so impressive compared to those obtained by ADS. ADS momentum simulation tool is the best for this kind of filter, and seems it is far more efficient than HFSS. The ADS simulation has a much shorter simulation run time (typically 2 s) than the HFSS (10 s), which solves each frequency point separately but consumes far more system memory.

4. CONCLUSIONS

The EM simulators offer several advantages and disadvantages, depending on the parameters that must be simulated. For our studied dual band filter, ADS offered most accurate, efficient and fast solution. For the S-parameters, especially S 11 and S 21 , neither program will offer fully accurate results, but ADS appears to be more accurate compared to HFSS. We are seeing significant re- ductions in the level of return losses obtained by ADS which have decreased fourfold compared to those fined by HFSS. The obtained S 21 result from ADS simulator shows that the proposed filter has an insertion loss of 0.18 dB and 0.3 dB at the first resonant frequency 1.68 GHz, and the second resonant frequency 2.81 GHz, respectively. However, the obtained insertion losses by HFSS simulation are about 0.4 dB and 0.9 dB respectively. So ADS has been successfully used for the design of planar filter especially dual-band RF filters.

REFERENCES

1. Hong, J. S. and M. J. Lancaster, Microstrip Filters for RF/Microwave Applications, Wiley, New York, 2001.

2. Chen, Z.-X., X.-W. Dai, and C.-H. Liang, “Novel dual-band bandpass filter using double square loop structure,” Progress In Electromagnetics Research, Vol. 77, 409–416, 2007.

3. Kinayman, N. and M. I. Aksum, Modern Microwave Circuits, Boston, London, 2005.

4. Yu, M., A. Panariello, M. Ismail, and J. Zheng, “3-D EM simulators for passive devices,” IEEE Microwave Magazine, Vol. 9, No. 6, 50–61, December 2008.

5. Zhang, Y., J. X. Chen, and Q. Xue, “Dual-band bandpass filters using stub-loaded resonators,” IEEE Microwave and Wireless Components Letters, Vol. 17, No. 8, 583–585, August 2007.