Sie sind auf Seite 1von 11

U217B/ U217B-FP

Zero Voltage Switch with Adjustable Ramp


Description
The integrated circuit, U217B, is designed as a zerovoltage switch in bipolar technology. It is used to control resistive loads at mains by a triac in zero-crossing mode. A ramp generator allows to realize power control function by period group control, whereas full wave logic guarantees that full mains cycles are used for load switching.

Features
D D D D D D D D
Direct supply from the mains Current consumption 0.5 mA Very few external components Full wave drive no dc current component in the load circuit Negative output current pulse typ. 100 mA short circuit protected Simple power control Ramp generator Reference voltage

Applications
D Full wave power control D Temperature regulation D Power blinking switch
Package: DIP8, SO8

Block Diagram
95 10872

D1 220 kW (250 V~) R2 (Rsync) R1

BYT86/800 18 kW/ 2W Load 1000 W

C2 2.2 mF/ 10 V R5

R4 100 kW 1

2 Ramp generator

8 Synchronization

5 7 Supply GND 6

C1 100 mF/ 16 V TIC 236N 100 W R3 G

VM = 230 V~ MT2 MT1

15 kW max 100 kW min R6 58 kW

3 4 + + Comparator Full wave logic Pulse amplifier

Reference voltage 1.25 V N

Figure 1. Block diagram with typical circuit, period group control 0 to 100%

TELEFUNKEN Semiconductors Rev. A1, 24-May-96

1 (11)

U217B/ U217B-FP
General Description
The integrated circuit, U217B, is a triac controller for the zero crossing mode. It is meant to control power in switching resistive loads of mains supply. Information regarding supply sync. is provided at Pin 8 via resistor RSync. To avoid dc load on the mains, full wave logic guarantees that complete mains cycles are used for load switching. A fire pulse is released when the inverted input of the comparator is negative (Pin 4) with respect to the non inverted input (Pin 3) and internal reference voltage. A ramp generator with free selectable duration is possible with capacitor C2 at Pin 2 which provides not only symmetrical pulse burst control (figure 3), but also control with superimposed proportional band (figure 10). Ramp voltage available at capacitor C2 is decoupled across emitter follower at Pin l. To maintain the lamp flicker specification, ramp duration is adjusted according to the controlling load. In practice, interference should be avoided (temperature control). Therefore in such cases a two point control is preferred to proportional control. One can use internal reference voltage for simple applications. In that case Pin 3 is inactive and connected to Pin 7 (GND), figure 9.
95 11306

Firing Pulse Width tp, (Figure 4)


This depends on the latching current of the triac and its load current. The firing pulse width is determined by the zero crossing identification which can be influenced with the help of sync. resistance, Rsync, (figure 6). tp = whereas = IL VM = P =

arc. sin

IL

VM

P 2 Latching current of the triac Mains supply, effective Power load (users power)

Total current consumption is influenced by the firing pulse width, which can be calculated as follows: R sync

V M 2 sin (w 2 )0.6 V 49 kW 3.5 105A


tp

10.00 Vmains = 230 V

1.00 t p ( ms )

0.10

IL ( mA) 200 100

Ramp control

0.01 10
96 11939

50

100

1000 P(W)

10000

Figure 4.

2 VS

C2

2000 1600 RSync ( kW ) VM=230V AC Tamb=25C

Figure 2. Pin 1 internal network

t V1 1.4 V Final voltage Vmin Initial voltage Vmax


95 11307

1200

800

400

7.3 V VS(Pin5)

0 0
95 9978

300

600

tp ( ms )

900

1200

1500

Figure 3.

Figure 5.

2 (11)

TELEFUNKEN Semiconductors Rev. A1, 24-May-96

U217B/ U217B-FP
Triac Firing Current (Pulse)
This depends on the triac requirement. It can be limited with gate series resistance which is calculated as follows:

Supply Voltage
The integrated circuit U217B (which also contains internal voltage limiting) can be connected via the diode (D1) and the resistor (R1) with the mains supply. An internal climb circuit limits the voltage between Pin 5 and 7 to a typical value of 9.25 V. Series resistance R1 can be calculated (figures 7 and 8) as follows: R1max = 0.85 Vmin VSmax ; P(R1) = 2 Itot (VM VS)2 2 R1

RGmax

7.5 V VGmax 36 W IGmax IGmax T

IP =

tp

whereas: = Gate voltage VG IGmax = Max. gate current = Average gate current Ip = Firing pulse width tp T = Mains period duration

Itot = IS + IP + Ix whereas VM = Mains voltage = Limiting voltage of the IC VS = Total current consumption Itot = Current requirement of the IC (without load) IS = Current requirement of other peripheral Ix components P(R1) = Power dissipation at R1

50

6 5 VMains=230V

40 VMains=230V R 1 ( kW ) 30

PR1 ( W ) 15
95 10116

4 3 2 1 0

20 10 0 0
95 10114

12

12

15

Itot ( mA )

Itot ( mA )

Figure 6.

Figure 7.

TELEFUNKEN Semiconductors Rev. A1, 24-May-96

3 (11)

U217B/ U217B-FP
Absolute Maximum Ratings
Reference point Pin 7 Parameters Supply current Sync. current Output current ramp generator Input voltages Pin 5 Pin 8 Pin 1 Pin 1, 3, 4, 6 Pin 2 Pin 8 Symbol IS ISync. IO VI VI VI Ptot Tj Tamb Tstg Value 30 5 3 VS 2 to VS 7.3 400 125 125 0 to 100 40 to + 125 Unit mA mA mA V

Power dissipation Tamb = 45C b Tamb = 100C Junction temperature Operating-ambient temperature range Storage temperature range mW C C C

Thermal Resistance
Parameters Junction ambient Symbol RthJA Maximum 200 Unit K/W

Electrical Characteristics
VS = 8.5 V, Tamb = 25C, reference point Pin 7, unless otherwise specified Parameters Supply voltage limitation Supply current Voltage limitation Synchronous current Zero detector Output pulse width Test Conditions / Pin IS = 5 mA Pin 5 Pin 5 I8 = 1 mA Pin 8 Pin 8 VM= 230 V , Rsync = 220 kW Rsync = 470 kW V6 = 0 V Pin 6 Symbol VS IS VI Isync Isync tP IO VI0 IIB VIC VT 100 5 1 1.25 15 1 (VS1) Min 8.6 7.5 0.12 35 260 460 Typ 9.25 Max 9.9 500 8.7 Unit V mA V mA mA

ms
mA mV mA V V

Output pulse current Comparator Input offset voltage Pin 3,4 Input bias current Pin 4 Common mode input Pin 3,4 voltage Threshold internal V3 = 0 V Pin 4 reference Ramp generator, Pin 1, figure 1 Period IS= 1 mA, Isync =1 mA, C1 = 100 mF, C2 = 1 mF, R4= 100 kW Final voltage Initial voltage Charge current V2 = 0 V, I8 = 1 mA Pin 2

T V1 I2

0.9 6.8 13

1.5 1.40 7.3 17

1.80 7.8 26

s V

mA

4 (11)

TELEFUNKEN Semiconductors Rev. A1, 24-May-96

U217B/ U217B-FP
Applications
L RL Load VM = 230 V ~ 56 W N VDR +5 V 7 6 5
CNY21

270 kW

BYT86/800

18 kW 1.5 W

U217B
1 47 mF/ 10 V 2 3 4 56 kW 39 kW II  1.5 mA VI

95 11308

Figure 8. Power switch


95 11309

2.2 mF/ 10 V

D1 C2 220 kW (250 V~) R2 (Rsync) R1

BYT86/800
18 kW/ 2W Load 1000 W

470 kW

R8 BC237

100 kW 1 R5
1)

R4

2 Ramp generator

8 Synchronization

5 7 Supply

C1 VM = 230 V~

NTC/M87 B value = 3988

100 kW

R(25)

100 kW

R6

3 4 + + 6 Full wave logic Comparator Pulse amplifier

100 W R3

R9

150 W Rp 220 kW R7 130 kW

Reference voltage 1.25 V N

R(25) =100 kW/B =3988

Figure 9. Temperature control 15 to 35C with sensor monitoring NTCSensor M 87 Fabr. Siemens

R(15) = 159 kW R(35) = 64.5 kW

R51) determines the proportional range

TELEFUNKEN Semiconductors Rev. A1, 24-May-96

5 (11)

U217B/ U217B-FP
L 0.5 ... 2.2 kW VM= 230 V ~ 100 nF/ 250 V ~ 56 W 270 kW BYT86/800

18 kW/ 1.5 W

82 W

U217B
1 150 kW 47 mF/ 16V
95 11310

4 110 kW 0.47 mF/ 10 V

Figure 10. Power blinking switch with f

 2.7 Hz, duty cycle 1:1, power range 0.5 to 2.2 kW

6 (11)

TELEFUNKEN Semiconductors Rev. A1, 24-May-96

U217B/ U217B-FP
L Load VM = 230 V ~ R2 IH = 50 mA N 62 W R3 0.35 ... 1.5 kW 510 kW R5 680 kW 13 kW/2 W R1 BYT86/800 DT 1N4148 680 kW R4

1N4148 8 7 6 5 R16 220 kW

U217B

R6

9.1 kW R7 12 kW 25 kW C1 NTC 33 kW 56 kW R8 1 mF C2 2.2 mF R15

1 910 kW R10

3 C3

R9 12 kW C5 C4 100 mF/ 12 V 47 mF

10 nF

95 11311

Figure 11. Room temperature control with definite reduction (remote control) for a temperature range 5 to 30C

TELEFUNKEN Semiconductors Rev. A1, 24-May-96

7 (11)

U217B/ U217B-FP
L Load/ 1000 W VM = 230 V ~ 220 kW BYT51G

18 kW 1.5 W VDR 56 W

5 220 kW (680 kW)

U217B
1 2 3 4

500 kW (2 MW)

10 nF 68 mF/ 10 V
95 11312

50 kW (200 kW)

NTC

Figure 12. Twopoint temperature control for a temperature range 15 to 30C

8 (11)

TELEFUNKEN Semiconductors Rev. A1, 24-May-96

U217B/ U217B-FP
L D1 Load/400 W VM = 230 V~ R1 92 W N R3 8 7 6 5 NTC 200 kW 430 kW Rsync BYT51G

18 kW/ 1.5 W

U217B
D2 1N4148 1 2 3 4 R6 27 kW 330 kW
R7/ 8.2 kW

R15/ 50 kW

R5

R4/ 39 kW C2 150 nF

33 mF/ 10 V
95 11313

C3

68 mF/
10 V

C1

Figure 13. Two-point temperature control for a temperature range 18 to 32C and hysteresis of 0.5C at 25C

TELEFUNKEN Semiconductors Rev. A1, 24-May-96

9 (11)

U217B/ U217B-FP
Dimension in mm
Package: DIP8

94 8873

Package: SO8

94 8862

10 (11)

TELEFUNKEN Semiconductors Rev. A1, 24-May-96

U217B/ U217B-FP
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423

TELEFUNKEN Semiconductors Rev. A1, 24-May-96

11 (11)