SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2906

Low Power Hermetic TO-18 Metal package. Ideally suited for High Speed Switching and General Purpose Applications Screening Options Available

ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated)

VCBO VCEO VEBO IC PD PD TJ Tstg Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Continuous Collector Current TA = 25C Total Power Dissipation at Derate Above 25C TC = 25C Total Power Dissipation at Derate Above 25C Junction Temperature Range Storage Temperature Range -60V -40V -5V -600mA 400mW 2.3mW/C 1.8W 10.3mW/C -65 to +200C -65 to +200C

THERMAL PROPERTIES
Symbols
RJA RJC

Parameters
Thermal Resistance, Junction To Ambient Thermal Resistance, Junction To Case

Min.

Typ.

Max.
437.5 97.2

Units
C/W C/W

Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Document Number 8078 Issue 2 Page 1 of 3

Website: http://www.semelab-tt.com

SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2906

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise stated)
Symbols
V(BR)CEO
(1)

Parameters
Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage

Test Conditions
IC = -10mA IC = -10A IE = -10A VCE = -30V VCB = -50V IB = 0 IE = 0 IC = 0 VBE = -0.5V IE = 0 TA = 150C IC = -150mA IC = -500mA IC = -150mA IC = -500mA IC = -0.1mA IC = -1.0mA IB = -15mA IB = -50mA IB = -15mA IB = -50mA VCE = -10V VCE = -10V VCE = -10V VCE = -10V VCE = -10V

Min.
-40 -60 -5

Typ

Max.

Units

V(BR)CBO V(BR)EBO ICEX ICBO

(1)

-50 -20 -20 -0.4 -1.6 -1.3 -2.6 20 25 35 40 20 120

nA A

VCE(sat)

VBE(sat)

(1)

hFE

(1)

Forward-current transfer ratio

IC = -10mA IC = -150mA IC = -500mA

DYNAMIC CHARACTERISTICS
fT Transition Frequency IC = -50mA f = 100MHz Output Capacitance VCB = -10V f = 1.0MHz Input Capacitance VEB = -2V f = 1.0MHz Turn-On Time IC = -150mA IB1 = -15mA IC = -150mA VCC = -30V VCC = -30V 45 ns 300 IC = 0 30 IE = 0 8 pF VCE = -20V 170 MHz

Cobo

Cibo

ton

toff

Turn-Off Time

IB1 = - IB2 = -15mA

Notes (1) Pulse Width 300us, 2%

Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com

Website: http://www.semelab-tt.com

Document Number 8078 Issue 2 Page 2 of 3

SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2906

MECHANICAL DATA
Dimensions in mm (inches)
5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178)

0.48 (0.019) 0.41 (0.016) dia.

2.54 (0.100) Nom.

3 2

TO-18 (TO-206AA) METAL PACKAGE

Underside View Pin 1 - Emitter Pin 2 - Base Pin 3 - Collector

Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com

12.7 (0.500) min.

5.33 (0.210) 4.32 (0.170)

Website: http://www.semelab-tt.com

Document Number 8078 Issue 2 Page 3 of 3