BF966S

Vishay Semiconductors

NChannel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

Electrostatic sensitive device. Observe precautions for handling.

Applications
Input- and mixer stages especially UHF-tuners.

Features
D Integrated gate protection diodes D High cross modulation performance D Low noise figure
3 4 2
94 9307 96 12647

D High AGC-range D Low feedback capacitance D Low input capacitance

G2 G1 D

BF966S Marking: BF966S Plastic case (TO 50) 1=Drain, 2=Source, 3=Gate 1, 4=Gate 2

12623

Absolute Maximum Ratings

Tamb = 25_C, unless otherwise specified Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Total power dissipation Channel temperature Storage temperature range Test Conditions Type Symbol Value VDS 20 ID 30 IG1/G2SM 10 Ptot 200 TCh 150 Tstg 55 to +150 Unit V mA mA mW C C

Tamb 60 C

Maximum Thermal Resistance

Tamb = 25_C, unless otherwise specified Parameter Test Conditions Channel ambient on glass fibre printed board (40 x 25 x 1.5) mm3 plated with 35mm Cu Symbol RthChA Value 450 Unit K/W

Document Number 85004 Rev. 3, 20-Jan-99

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BF966S
Vishay Semiconductors Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified Parameter Drain - source breakdown voltage Gate 1 - source breakdown voltage Gate 2 - source breakdown voltage Gate 1 - source leakage current Gate 2 - source leakage current Drain current Test Conditions ID = 10 mA, VG1S = VG2S = 4 V IG1S = 10 mA, VG2S = VDS = 0 IG2S = 10 mA, VG1S = VDS = 0 VG1S = 5 V, VG2S = VDS = 0 VG2S = 5 V, VG1S = VDS = 0 VDS = 15 V, VG1S = 0, VG2S = 4 V BF966S BF966SA BF966SB Type Symbol V(BR)DS V(BR)G1SS V(BR)G2SS IG1SS IG2SS IDSS IDSS IDSS VG1S(OFF) VG2S(OFF) 4 4 9.5 Min 20 8 8 Typ Max Unit V V V nA nA mA mA mA V V

14 14 50 50 18 10.5 18 2.5 2.0

Gate 1 - source cut-off voltage Gate 2 - source cut-off voltage

VDS = 15 V, VG2S = 4 V, ID = 20 mA VDS = 15 V, VG1S = 0, ID = 20 mA

Electrical AC Characteristics
VDS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz , Tamb = 25_C, unless otherwise specified Parameter Forward transadmittance Gate 1 input capacitance Gate 2 input capacitance Feedback capacitance Output capacitance Power g gain AGC range Noise figure g Test Conditions Symbol y21s Cissg1 Cissg2 Crss Coss Gps Gps DGps F F Min 15 Typ 18.5 2.2 1.1 25 0.8 25 18 1.0 1.8 Max 2.6 35 1.2 Unit mS pF pF fF pF dB dB dB dB dB

VG1S = 0, VG2S = 4 V

GS = 2 mS, GL = 0.5 mS, f = 200 MHz GS = 3,3 mS, GL = 1 mS, f = 800 MHz VG2S = 4 to 2 V, f = 800 MHz GS = 2 mS, GL = 0.5 mS, f = 200 MHz GS = 3,3 mS, GL = 1 mS, f = 800 MHz

40

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Document Number 85004 Rev. 3, 20-Jan-99

BF966S
Vishay Semiconductors Typical Characteristics (Tamb = 25_C unless otherwise specified)
300 P tot Total Power Dissipation ( mW ) 250 ID Drain Current ( mA ) 200 150 100 50 0 0
96 12159

80 70 60 50 40 30 20 10 0 20 40 60 80 100 120 140 160

12764

VDS= 15V

VG1S= 4V 3V 2V

1V

0V 1V 1 0 1 2 3 4 5

Tamb Ambient Temperature ( C )

VG2S Gate 2 Source Voltage ( V )

Figure 1. Total Power Dissipation vs. Ambient Temperature

36 32 ID Drain Current ( mA ) 28 24 20 16 12 8 4 0 0
12762

Figure 4. Drain Current vs. Gate 2 Source Voltage

4.0

1.5V 1V

C issg1 Gate 1 Input Capacitance ( pF )

VG1S= 2V

3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0

VG2S= 4V 0.5V

VDS=15V VG2S=4V f=1MHz

0V 0.5V 1V 2 4 6 8 10 12 14 16

12 15 18 21 24 27 30

VDS Drain Source Voltage ( V )

12765

ID Drain Current ( mA )

Figure 2. Drain Current vs. Drain Source Voltage

100

Figure 5. Gate 1 Input Capacitance vs. Drain Current

2.00 C oss Output Capacitance ( pF )

90 ID Drain Current ( mA ) 80 70 60 50 40 30 20 10 0 1
12763

VDS= 15V

VG2S= 6V 5V 4V 3V 2V 1V 0V 1V

1.75 1.50 1.25 1.00 0.75 0.50 0.25 0 0

VG2S=4V ID=10mA f=1MHz

5
12766

10 12 14 16 18 20

VG1S Gate 1 Source Voltage ( V )

VDS Drain Source Voltage ( V )

Figure 3. Drain Current vs. Gate 1 Source Voltage

Figure 6. Output Capacitance vs. Drain Source Voltage

Document Number 85004 Rev. 3, 20-Jan-99

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BF966S
Vishay Semiconductors
4.0 C issg2 Gate 2 Input Capacitance ( pF ) 3.6 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 3
12767

20 VDS=15V VG1S=0 f=1MHz Im ( y ) ( mS ) 11 18 16 14 12 10 8 6 4 2 0 2 1 0 1 2 3 4 5 6

12770

f=1300MHz ID=5mA ID=10mA 1000MHz 700MHz 400MHz VDS=15V VG2S=4V f=100...1300MHz ID=20mA

100MHz 0 2 4 6 8 10 12 14 16 18 20

VG2S Gate 2 Source Voltage ( V )

Re (y11) ( mS )

Figure 7. Gate 2 Input Capacitance vs. Gate 2 Source Voltage

10 Transducer Gain ( dB ) 0 10 20 30 40 50 60 70 5
12768

Figure 10. Short Circuit Input Admittance

0.3 f=1300MHz 0.2 ID=5mA Im ( y ) ( mS ) 12 0.1 10mA 20mA 1000MHz 0.0 700MHz VDS=15V VG2S=4V f=100...1300MHz 0.3 0.4 0.5

f= 200MHz

4V 3V 2V 1V 0V 0.5V 1V

S 21

VG2S=2...3V 4 3 2 1 0 1 2 3
12772

0.1 0 0.1 0.2 Re (y12) ( mS )

VG1S Gate 1 Source Voltage ( V )

Figure 8. Transducer Gain vs. Gate 1 Source Voltage

24 22 20 18 16 14 12 10 8 6 4 2 0 0
12769

Figure 11. Short Circuit Reverse Transfer Admittance

5 VDS=15V VG2S=4V f=100...1300MHz ID=5mA 10mA 20mA

Y21S Forward Transadmittance ( mS )

VDS=15V f=1MHz

VG2S=4V

0 5

f=100MHz

3V Im ( y ) ( mS ) 21

10 15 20 25 30

400MHz 700MHz 1000MHz

2V 0V 5 10 15 1V 0.5V 20 25 30

35 40 8
12771

1300MHz

12

16

20

24

ID Drain Current ( mA )

Re (y21) ( mS )

Figure 9. Forward Transadmittance vs. Drain Current

Figure 12. Short Circuit Forward Transfer Admittance

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Document Number 85004 Rev. 3, 20-Jan-99

BF966S
Vishay Semiconductors
8 f=1300MHz 7 6 Im ( y ) ( mS ) 22 5 4 3 2 1 0 0
12773

ID=10mA ID=5mA 20mA 1000MHz 700MHz 400MHz VDS=15V VG2S=4V f=100...1300MHz 1.0 1.5 2.0 2.5

100MHz 0.5

Re (y22) ( mS )

Figure 13. Short Circuit Output Admittance

Document Number 85004 Rev. 3, 20-Jan-99

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BF966S
Vishay Semiconductors VDS = 15 V, ID = 5 to 20 mA, VG2S = 4 V , Z0 = 50 S11
j 120 j0.5 j2 150 j0.2 j5 30 1000 0 0.2 0.5 1 2 5

W
90 60

S12

1300MHz 400 100 0.008 0.016

100

j0.2

12 924

S21
90 120 700 400 150 1000 30 60

100 180 0.8

150

ID= 20mA 10mA 30 30 5mA

j0.2

j0.5 120
12 926

60 90
12 927

Figure 15. Forward transmission coefficient

Figure 17. Output reflection coefficient

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1300MHz 400 1000 700 j0.5 j j2

180

j5 150

ID= 20mA 10mA 30 5mA

120
12 925

60 90

Figure 14. Input reflection coefficient

Figure 16. Reverse transmission coefficient

S22
j j0.5 j2

j0.2 1300MHz 1.6 0 0 0.2 0.5 1 2 5 100

j5

700

j5

1300MHz j2 j

Document Number 85004 Rev. 3, 20-Jan-99

BF966S
Vishay Semiconductors Dimensions in mm

96 12242

Document Number 85004 Rev. 3, 20-Jan-99

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BF966S
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423

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Document Number 85004 Rev. 3, 20-Jan-99

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