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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by 2N3903/D

General Purpose Transistors


NPN Silicon

2N3903 2N3904*
*Motorola Preferred Device

COLLECTOR 3 2 BASE 1 EMITTER

1 2 3

MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 40 60 6.0 200 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C CASE 2904, STYLE 1 TO92 (TO226AA)

THERMAL CHARACTERISTICS(1)
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)


Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (2) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) 1. Indicates Data in addition to JEDEC Requirements. 2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%. V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX 40 60 6.0 50 50 Vdc Vdc Vdc nAdc nAdc

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

Motorola SmallSignal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996

2N3903 2N3904
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS
DC Current Gain(1) (IC = 0.1 mAdc, VCE = 1.0 Vdc) hFE 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 VCE(sat) VBE(sat) 0.65 0.85 0.95 0.2 0.3 Vdc 20 40 35 70 50 100 30 60 15 30 150 300 Vdc

(IC = 1.0 mAdc, VCE = 1.0 Vdc)

(IC = 10 mAdc, VCE = 1.0 Vdc)

(IC = 50 mAdc, VCE = 1.0 Vdc)

(IC = 100 mAdc, VCE = 1.0 Vdc)

Collector Emitter Saturation Voltage(1) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc Base Emitter Saturation Voltage(1) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc)

SMALL SIGNAL CHARACTERISTICS


Current Gain Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) SmallSignal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Noise Figure (IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 k , f = 1.0 kHz) 2N3903 2N3904 2N3903 2N3904 hre 2N3903 2N3904 hfe 2N3903 2N3904 hoe NF 6.0 5.0 50 100 1.0 200 400 40 0.1 0.5 5.0 8.0 fT 2N3903 2N3904 Cobo Cibo hie 1.0 1.0 8.0 10 X 10 4 250 300 4.0 8.0 pF pF k MHz

mmhos
dB

SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time 1. Pulse Test: Pulse Width ( (VCC = 3.0 Vdc, VBE = 0.5 Vdc, IC = 10 mAdc, IB1 = 1.0 mAdc) (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc) 2N3903 2N3904 td tr ts tf 35 35 175 200 50 ns ns ns ns

v 300 ms; Duty Cycle v 2.0%.

Motorola SmallSignal Transistors, FETs and Diodes Device Data

2N3903 2N3904
DUTY CYCLE = 2% 300 ns +3 V +10.9 V 10 k 0 0.5 V < 1 ns CS < 4 pF* 9.1 V < 1 ns 1N916 CS < 4 pF* 275 10 < t1 < 500 ms DUTY CYCLE = 2% t1 +3 V +10.9 V 275 10 k

* Total shunt capacitance of test jig and connectors

Figure 1. Delay and Rise Time Equivalent Test Circuit

Figure 2. Storage and Fall Time Equivalent Test Circuit

TYPICAL TRANSIENT CHARACTERISTICS

TJ = 25C TJ = 125C 10 7.0 CAPACITANCE (pF) Q, CHARGE (pC) 5.0 Cibo 3.0 2.0 Cobo 5000 3000 2000 1000 700 500 300 200 100 70 50 QT QA VCC = 40 V IC/IB = 10

1.0 0.1

0.2 0.3

0.5 0.7 1.0

2.0 3.0

5.0 7.0 10

20 30 40

1.0

2.0 3.0

5.0 7.0 10

20

30

50 70 100

200

REVERSE BIAS VOLTAGE (VOLTS)

IC, COLLECTOR CURRENT (mA)

Figure 3. Capacitance

Figure 4. Charge Data

Motorola SmallSignal Transistors, FETs and Diodes Device Data

2N3903 2N3904
500 300 200 100 70 50 30 20 10 7 5 td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 2.0 V 50 70 100 200 40 V 15 V 10 7 5 IC/IB = 10 500 300 200 t r, RISE TIME (ns) 100 70 50 30 20 VCC = 40 V IC/IB = 10

TIME (ns)

tr @ VCC = 3.0 V

1.0

2.0 3.0

5.0 7.0 10

20

30

50 70 100

200

IC, COLLECTOR CURRENT (mA)

Figure 5. Turn On Time


500 300 200 t s, STORAGE TIME (ns) 100 70 50 30 20 10 7 5 IC/IB = 20 IC/IB = 10 IC/IB = 20 IC/IB = 10 500 300 200

Figure 6. Rise Time

ts = ts 1/8 tf IB1 = IB2 t f , FALL TIME (ns)

VCC = 40 V IB1 = IB2 IC/IB = 20

100 70 50 30 20 10 7 5 IC/IB = 10

1.0

2.0 3.0

5.0 7.0 10

20

30

50 70 100

200

1.0

2.0 3.0

5.0 7.0 10

20

30

50 70 100

200

IC, COLLECTOR CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

Figure 7. Storage Time

Figure 8. Fall Time

TYPICAL AUDIO SMALL SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS


(VCE = 5.0 Vdc, TA = 25C, Bandwidth = 1.0 Hz)
12 10 NF, NOISE FIGURE (dB) 8 6 4 2 0 0.1 SOURCE RESISTANCE = 500 W IC = 100 mA 0.2 0.4 1.0 2.0 4.0 10 20 40 100 14 f = 1.0 kHz 12 NF, NOISE FIGURE (dB) 10 8 6 4 2 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 IC = 100 mA IC = 1.0 mA

SOURCE RESISTANCE = 200 W IC = 1.0 mA SOURCE RESISTANCE = 200 W IC = 0.5 mA SOURCE RESISTANCE = 1.0 k IC = 50 mA

IC = 0.5 mA IC = 50 mA

f, FREQUENCY (kHz)

RS, SOURCE RESISTANCE (k OHMS)

Figure 9.

Figure 10.

Motorola SmallSignal Transistors, FETs and Diodes Device Data

2N3903 2N3904
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25C)
300 hoe, OUTPUT ADMITTANCE (m mhos) 5.0 10 100 50

h fe , CURRENT GAIN

200

20 10 5

100 70 50

2 1

30

0.1

0.2

0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA)

0.1

0.2

0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA)

5.0

10

Figure 11. Current Gain


20 h ie , INPUT IMPEDANCE (k OHMS) 10 5.0 10 7.0 5.0 3.0 2.0

Figure 12. Output Admittance

2.0 1.0 0.5

h re , VOLTAGE FEEDBACK RATIO (X 10 4 ) 5.0 10

1.0 0.7 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10

0.2

0.1

0.2

0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA)

Figure 13. Input Impedance

Figure 14. Voltage Feedback Ratio

TYPICAL STATIC CHARACTERISTICS


2.0 TJ = +125C 1.0 0.7 0.5 0.3 0.2 55C +25C VCE = 1.0 V

h FE, DC CURRENT GAIN (NORMALIZED)

0.1 0.1

0.2

0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0

10

20

30

50

70

100

200

IC, COLLECTOR CURRENT (mA)

Figure 15. DC Current Gain

Motorola SmallSignal Transistors, FETs and Diodes Device Data

2N3903 2N3904
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25C 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA

0.6

0.4

0.2

0 0.01

0.02

0.03

0.05

0.07

0.1

0.2

0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0

10

IB, BASE CURRENT (mA)

Figure 16. Collector Saturation Region

1.2 TJ = 25C 1.0 V, VOLTAGE (VOLTS) 0.8 VBE @ VCE =1.0 V 0.6 0.4 VCE(sat) @ IC/IB =10 0.2 0 VBE(sat) @ IC/IB =10 COEFFICIENT (mV/ C)

1.0 0.5 +25C TO +125C

qVC FOR VCE(sat)


0 0.5 55C TO +25C 1.0 +25C TO +125C 1.5 2.0 55C TO +25C

qVB FOR VBE(sat)

1.0

2.0

5.0

10

20

50

100

200

20

40

60

80

100

120

140

160

180 200

IC, COLLECTOR CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

Figure 17. ON Voltages

Figure 18. Temperature Coefficients

Motorola SmallSignal Transistors, FETs and Diodes Device Data

2N3903 2N3904
PACKAGE DIMENSIONS
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 0.250 0.080 0.105 0.100 0.115 0.135 MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 6.35 2.04 2.66 2.54 2.93 3.43

A R P
SEATING PLANE

L K D

X X G H V
1

C N N

SECTION XX

DIM A B C D F G H J K L N P R V

CASE 02904 (TO226AA) ISSUE AD

STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR

Motorola SmallSignal Transistors, FETs and Diodes Device Data

2N3903 2N3904

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2N3903/D Motorola SmallSignal Transistors, FETs and Diodes Device Data