Semiconductors

1. Evaluate the free electron concentration in the conduction band of a non degenerate semiconductor 2. Evaluate the free hole concentration in the valence band of a non degenerate semiconductor 3. Derive the intrinsic concentration (ni ) expression in an intrinsic semiconductor 4. Derive the mass action law for a doped non degenerate semiconductor in thermal equilibrium 5. Derive the temperature dependence of the intrinsic concentration in a non degenerate semiconductor 6. Derive Shockley equations for a non degenerate semiconductor 7. Evaluate the position of the Fermi level in a semiconducor sample in the following three cases: (a) intrinsic; (b) n doped and non degenerate; (c) p doped and non degenerate; 8. Assuming that all doping atoms are ionized, derive the expression for the majority carrier concentration in a non degenerate semiconductor in the following three cases: (a) n doped with doping concentration ND ; (b) p doped with doping concentration NA ; (c) concentration ND of donor atoms and NA of acceptor atoms (assume NA > ND ) 9. Derive microscopic Ohms law for a semiconductor and evaluate the electrical conductivity for an intrinsic, n doped and p doped semiconductor

Semiconductor mathematical model

1. Derive the free electron continuity equation in a semiconductor 2. Derive the free hole continuity equation in a semiconductor 3. Derive, in stationary (i.e., static) conditions, the behaviour of the minority carrier excess concentration (e.g., electrons in a p sample) under the quasi-neutrality condition with zero electric eld, and assuming that the injected excess concentration in x = 0 is known, while it becomes zero at the sample limit x = L

Metal-semiconductor junction
1. Draw the qualitative band diagram for a junction between metal and n semiconductor (assume qM > qS ), highlighting the most important energy levels and the energy barriers. Consider the three cases: (a) thermal equilibrium; (b) reverse bias; (c) forward bias with negligible voltage drop on the neutral regions 2. Derive the width of the semiconductor depleted region for a junction between metal and n semiconductor (assume qM > qS ) 3. Assuming known the expression for the depleted region width, derive the depletion capacitance as a function of the applied bias voltage for a junction between metal and n semiconductor (assume qM > qS ) 4. Derive the static characteristic of a junction between metal and n semiconductor (assume qM > qS ) 5. Derive the expression of the dierential conductance for a junction between metal and n semiconductor (assume qM > qS ), and draw the small signal equivalent circuit

FET
1. Derive the charge control relation for a JFET or MESFET 2. Assuming known the charge control relation for an FET, derive the general expression for the device static characteristic 3. Discuss the dierences between FET drain current saturation due to channel pinch o or due to carrier velocity saturation

Heterostructures
1. Derive the heterostructure anity rule 2. Draw the qualitative equilibrium band diagram for an nn heterostructure, deriving the expression for the built in voltage (choose freely the order relationship between the material workfunctions) 3. Draw the qualitative equilibrium band diagram for a pp heterostructure, deriving the expression for the built in voltage (choose freely the order relationship between the material workfunctions) 4. Draw the qualitative equilibrium band diagram for an pn heterostructure, deriving the expression for the built in voltage (choose freely the order relationship between the material workfunctions) 2

5. Describe the main heterostructure features exploited in electronic and optoelectronic applications

Heterostructure FET
1. Draw the equilibrium qualitative band diagram for an HEMT, pointing out the advantages with respect to a MESFET 2. Describe the channel sheet charge saturation eect in an HEMT, pointing out its consequence on the device electrical characteristic

Bipolar transistor
1. For an npn bipolar transistor, dene and discuss all the current components crossing the emitter and collector junctions in forward operation. Dene also the current amplications F and F 2. Describe the physical causes of Early eect and discuss its impact on the static characteristics of an npn BJT, pointing out the consequences on the device doping levels 3. Dene the base transit time and derive its relation with the other BJT parameters 4. Draw the equilibrium qualitative band diagram for a single heterostructure HBT, pointing out the advantages with respect to a homostructure BJT

Optoelectronic devices
1. Describe an optical communication system, analyzing the main optoelectronic components and their features 2. Describe optical ber operation and their main applications 3. Discuss optical absorption and emission in a semiconductor, describing the advantages of using semiconductor alloys for optoelectronic applications 4. Describe a semiconductor LED, pointing out its main features 5. Describe the operating principle of a LASER diode 6. Describe the main photodetectors