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STT818B

HIGH GAIN LOW VOLTAGE PNP POWER TRANSISTOR

Type STT818B
s

Marking 818B

s s

VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE DC CURRENT GAIN > 100 (hFE) 3 A CONTINUOUS COLLECTOR CURRENT (IC) SURFACE-MOUNTING SOT23-6L PACKAGE IN TAPE & REEL SOT23-6L (TSOP6)

APPLICATIONS POWER MANAGEMENT IN PORTABLE EQUIPMENTS s SWITCHING REGULATOR IN BATTERY CHARGER APPLICATIONS
s

DESCRIPTION The device is manufactured in low voltage PNP Planar Technology by using a "Base Island" layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage.

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS


Symbol V CBO V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Base Peak Current Total Dissipation at T C = 25 o C Storage Temperature Max. Operating Junction Temperature Value -30 -30 -5 -3 -6 -0.2 -0.5 1.2 -65 to 150 150 Unit V V V A A A A W
o o

C C

December 2001

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STT818B
THERMAL DATA
R thj-amb (1) Thermal Resistance Junction-ambient
(1) Package mounted on FR4 pcb 25mm x 25mm.

Max

105

C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)


Symbol I CBO I EBO Parameter Collector Cut-off Current (I E = 0) Emitter Cut-off Current (IC = 0) Test Conditions VCB = -30 V VCB = -30 V VEB = -5 V IC = -10 mA -30 T C = 125 o C Min. Typ. Max. -0.1 -20 -0.1 Unit A A A V

V (BR)CEO Collector-Emitter Breakdown Voltage (IB = 0) V CE(sat ) VBE(sat) V BE(ON) h FE Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain

IC = -0.5 A IC = -2 A IC = -0.5 A I C = -0.5 A I C = -0.5 A IC = -2.5 A

I B = -5 mA I B = -20 mA I B = -5 mA V CE = -2 V V CE = -1 V V CE = -3 V 100 100

-0.075 -0.21 -0.74 -0.71 300

-0.15 -0.5 -1.1 -1.1

V V V V

Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.

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STT818B

SOT23-6L MECHANICAL DATA


mm MIN. A A1 A2 b C D E E1 L e e1 0.90 0.00 0.90 0.25 0.09 2.80 2.60 1.50 0.35 0.95 1.90 TYP. MAX. 1.45 0.15 1.30 0.50 0.20 3.10 3.00 1.75 0.55 MIN. 0.035 0.000 0.035 0.010 0.004 0.110 0.102 0.059 0.014 0.037 0.075 mils TYP. MAX. 0.057 0.006 0.051 0.020 0.008 0.122 0.118 0.069 0.022

DIM.

A A2 A1 b e1 e c L E

E1

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STT818B

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2001 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com

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