RFG30P06, RFP30P06, RF1S30P06SM

Data Sheet July 1999 File Number

2437.3

30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs

These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They are designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA09834.

Features
30A, 60V rDS(ON) = 0.065 Temperature Compensating PSPICE Model Peak Current vs Pulse Width Curve UIS Rating Curve 175oC Operating Temperature Related Literature - TB334 Guidelines for Soldering Surface Mount Components to PC Boards

Ordering Information
PART NUMBER RFG30P06 RFP30P06 RF1S30P06SM PACKAGE TO-247 TO-220AB TO-263AB BRAND RFG30P06 RFP30P06

Symbol
D

F1S30P06
S

NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, i.e. RF1S30P06SM9A.

Packaging
JEDEC STYLE TO-247
SOURCE DRAIN GATE DRAIN (BOTTOM SIDE METAL) DRAIN (FLANGE)

JEDEC TO-220AB
SOURCE DRAIN GATE

JEDEC TO-263AB

DRAIN (FLANGE) GATE SOURCE

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CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. PSPICE is a registered trademark of MicroSim Corporation. http://www.intersil.com or 407-727-9207 | Copyright Intersil Corporation 1999

RFG30P06, RFP30P06, RF1S30P06SM

Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specied RFG30P06, RFP30P06 RF1S30P06SM -60 -60 20 30 Refer to Peak Current Curve Refer to UIS Curve 135 0.9 -55 to 175 300 260 UNITS V V V A

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDSS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) (Figure 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Single Pulse Avalanche Rating (Figure 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Deratlng Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

W W/oC oC
oC oC

CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specication is not implied.

NOTE: 1. TJ = 25oC to 150oC.

Electrical Specications
PARAMETER

TC = 25oC, Unless Otherwise Specied SYMBOL BVDSS VGS(TH) IDSS IGSS rDS(ON) t(ON) td(ON) tr td(OFF) tf t(OFF) Qg(TOT) Qg(-10) Qg(TH) CISS COSS CRSS RJC RJA TO-220, TO-263 TO-247 VGS = 0 to -20V VGS = 0 to -10V VGS = 0 to -2V VDD = -48V, ID = 30A, RL = 1.6, IG(REF) = 1.6mA TEST CONDITIONS ID = 250A, VGS = 0V VGS = VDS, ID = 250A VDS = -60V, VGS = 0V VDS = 0.8 x Rated BVDSS, TC = 150oC VGS = 20V ID = -30A, VGS = -10V (Figure 9) VDD = -30V, ID = 15A, RL = 2.00, VGS = -10V RG = 6.25 (Figure 13) MIN -60 -2 TYP 15 23 28 18 140 70 5.5 3200 800 175 MAX -4 -1 -25 100 0.065 80 100 170 85 6.6 1.11 62 30 UNITS V V A A nA ns ns ns ns ns ns nC nC nC pF pF pF
oC/W oC/W oC/W

Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current

Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge at -10V Threshold Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient

VDS = 25V, VGS = 0V, f = 1MHz (Figure 12)

Source to Drain Diode Specications

PARAMETER Source to Drain Diode Voltage (Note 2) Diode Reverse Recovery Time NOTE: 2. Pulse test: pulse width 300s maximum, duty cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). SYMBOL VSD tRR TEST CONDITIONS ISD = -30A ISD = -30A, dISD/dt = -100A/s MIN TYP MAX -1.5 150 MAX V ns

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RFG30P06, RFP30P06, RF1S30P06SM Typical Performance Curves

1.2 POWER DISSIPATION MULTIPLIER 1.0 ID , DRAIN CURRENT (A) 0 25 50 75 100 125 150 175 -30 0.8 0.6 0.4 0.2 0 TC , CASE TEMPERATURE (oC)

Unless Otherwise Specied

-40

-20

-10

0 25 50 75 100 125 150 175 TC , CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE

2 1 ZJC, NORMALIZED THERMAL IMPEDANCE 0.5

0.2 PDM 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 10-5 10-4 10-3 10-2 10-1 t, RECTANGULAR PULSE DURATION (s) t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 100 101

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

-200 -100 ID , DRAIN CURRENT (A) 100s IDM , PEAK CURRENT (A)

-500 VGS = -20V VGS = -10V

FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT CAPABILITY AS FOLLOWS:

1ms -10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) TC = 25oC TJ = MAX RATED -1 -10 VDS , DRAIN TO SOURCE VOLTAGE (V) 10ms 100ms DC

-100

175 T C I = I 25 --------------------- 150

TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION -10 10-5 TC = 25oC 10-4 10-3 10-2 10-1 100 101

-1

-100

t, PULSE WIDTH (s)

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA

FIGURE 5. PEAK CURRENT CAPABILITY

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RFG30P06, RFP30P06, RF1S30P06SM Typical Performance Curves

-100 IAS , AVALANCHE CURRENT (A) STARTING TJ = 25oC ID, DRAIN CURRENT (A) -60

Unless Otherwise Specied

(Continued)

-75 VGS = -20V VGS = -10V VGS = -8V VGS = -7V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX TC = 25oC VGS = -6V -15 VGS = -4.5V 0 -2 -4 -6 -8 -10 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = -5V

-45

-10

STARTING TJ = 150oC

-30

If R = 0 tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD) If R 0 tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1]

-1 0.1

0 1 10 tAV, TIME IN AVALANCHE (ms) 100

NOTE: Refer to Intersil Application Notes AN9321 and AN9322, FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY FIGURE 7. SATURATION CHARACTERISTICS

IDS(ON), DRAIN TO SOURCE CURRENT (A)

-75 NORMALIZED DRAIN TO SOURCE ON RESISTANCE PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDD = -15V -55oC -45 175oC -30 25oC

2 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = -10V, ID = 30A 1.5

-60

0.5

-15

0 0 -2 -4 -6 -8 -10 VGS, GATE TO SOURCE VOLTAGE (V)

0 -80

-40

40

80

120

160

200

TJ , JUNCTION TEMPERATURE (oC)

FIGURE 8. TRANSFER CHARACTERISTICS

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE

2 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE VGS = VDS, ID = 250A

2 ID = 250A 1.5

NORMALIZED GATE THRESHOLD VOLTAGE

1.5

0.5

0.5

0 -80

-40

40

80

120

160

200

0 -80

-40

40

80

120

160

200

TJ , JUNCTION TEMPERATURE (oC)

TJ, JUNCTION TEMPERATURE (oC)

FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE

FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE

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RFG30P06, RFP30P06, RF1S30P06SM Typical Performance Curves

4000 CISS C, CAPACITANCE (pF) 3000 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGS

Unless Otherwise Specied

(Continued)
VDS, DRAIN TO SOURCE VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) -60 VDD = BVDSS -45 RL = 2.0 IG(REF) = -1.6mA VGS = -10V -30 0.75 BVDSS 0.50 BVDSS 0.25 BVDSS DRAIN SOURCE VOLTAGE 0 IG(REF) IG(ACT) 0 t, TIME (s) 80 IG(REF) IG(ACT) GATE SOURCE VOLTAGE VDD = BVDSS -7.5 -10

2000 COSS 1000 CRSS 0 0 -5 -10 -15

-5

-15

-2.5

-20

-25

20

VDS , DRAIN TO SOURCE VOLTAGE (V)

NOTE: Refer to Intersil Application Notes AN7254 and AN7260. FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT

Test Circuits and Waveforms

VDS tAV L VARY tP TO OBTAIN REQUIRED PEAK IAS RG 0

VDD VDD

0V VGS

DUT tP IAS 0.01

IAS tP BVDSS VDS

FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT

FIGURE 15. UNCLAMPED ENERGY WAVEFORMS

tON td(ON) tOFF td(OFF) tr tf 10% 10%

VDS RL VGS 0

VDD VGS RGS

+

VDS VGS 0

90%

90%

DUT

10% 50% PULSE WIDTH 90% 50%

FIGURE 16. SWITCHING TIME TEST CIRCUIT

FIGURE 17. RESISTIVE SWITCHING WAVEFORMS

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RFG30P06, RFP30P06, RF1S30P06SM Test Circuits and Waveforms

(Continued)

VDS RL 0 VGS = -2V VGS VDD

+

Qg(TH)

VDS

-VGS Qg(-10) VDD Qg(TOT) 0 Ig(REF)

VGS = -10V

DUT Ig(REF)

VGS = -20V

FIGURE 18. GATE CHARGE TEST CIRCUIT

FIGURE 19. GATE CHARGE WAVEFORMS

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RFG30P06, RFP30P06, RF1S30P06SM PSPICE Electrical Model

.SUBCKT RFP30P06 2 1 3; REV 8/21/94 CA 12 8 3.23e-9 CB 15 14 3.23e-9 CIN 6 8 3.08e-9 DBODY 5 7 DBDMOD DBREAK 7 11 DBKMOD DPLCAP 10 6 DPLCAPMOD EBREAK 5 11 17 18 -77.3 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 5 10 8 6 1 EVTO 20 6 8 18 1 IT 8 17 1 LDRAIN 2 5 1e-9 LGATE 1 9 4.92e-9 LSOURCE 3 7 4.60e-9 MOS1 16 6 8 8 MOSMOD M=0.99 MOS2 16 21 8 8 MOSMOD M=0.01
12 GATE 1 9

ESG

10 RSCL2 8 6

DRAIN 2 LDRAIN RSCL1 + 51

5 51 DPLCAP

EBREAK

ESCL 50 RDRAIN

+ 17 18

DBODY

11

EVTO 20 + 18 8 LGATE RGATE 6

VTO +

16 21 MOS1 DBREAK MOS2

RIN

CIN 8 RSOURCE LSOURCE 7 3 SOURCE

S1A 13 8 S1B CA EGS 14 13

S2A 15 S2B 13 + 6 8 EDS CB + 6 8 14 IT RBREAK 17 18 RVTO 19 VBAT +

RBREAK 17 18 RBKMOD 1 RDRAIN 50 16 RDSMOD 39.85e-3 RGATE 9 20 2.34 RIN 6 8 1e9 RSCL1 5 51 RSCLMOD 1e-6 RSCL2 5 50 1e3 RSOURCE 8 7 RDSMOD 2.56e-3 RVTO 18 19 RVTOMOD 1 S1A 6 12 13 8 S1AMOD S1B 13 12 13 8 S1BMOD S2A 6 15 14 13 S2AMOD S2B 13 15 14 13 S2BMOD VBAT 8 19 DC 1 VTO 21 6 -0.81

ESCL 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)*1e6/114,5))} .MODEL DBDMOD D (IS=4.7e-13 RS=1.31e-2 TRS1=1.39e-4 TRS2=-4.77e-6 CJO=2.85e-9 TT=8.81e-8) .MODEL DBKMOD D (RS=2.23e-1 TRS1=1.97e-3 TRS2=-2.37e-5) .MODEL DPLCAPMOD D (CJO=0.78e-9 IS=1e-30 N=10) .MODEL MOSMOD PMOS (VTO=-3.75 KP=10.83 IS=1e-30 N=10 TOX=1 L=1u W=1u) .MODEL RBKMOD RES (TC1=9.08e-4 TC2=-1.72e-6) .MODEL RDSMOD RES (TC1=5.01e-3 TC2=1.02e-5) .MODEL RSCLMOD RES (TC1=2.09e-3 TC2=5.88e-7) .MODEL RVTOMOD RES (TC1=-2.99e-3 TC2=1.40e-6) .MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=3.4 VOFF=1.4) .MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=1.4 VOFF=3.4) .MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=1.2 VOFF=-3.8) .MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-3.8 VOFF=1.2)

.ENDS NOTE: For further discussion of the PSPICE model consult A New PSPICE Sub-circuit for the Power MOSFET Featuring Global Temperature Options; authors, William J. Hepp and C. Frank Wheatley.

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RFG30P06, RFP30P06, RF1S30P06SM

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