Laser processing of materials

Temperature distributions
Prof. Dr. Frank Mcklich Dr. Andrs Lasagni Lehrstuhl fr Funktionswerkstoffe Sommersemester 2007
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Temperature distributions
Contents:
1. 2. 3. Definitions Diffusion length Temperature distribution in Bulk materials i. Heat diffusion equation ii. Constrain conditions iii. The error function iv. General solution v. Formulae for different conditions vi. Examples of laser heating 4. Temperature distribution in Thin Films i. Heat diffusion equation ii. Constrain conditions iii. Formulae for different conditions

iv. Cooling of thin-films

v. Heat transfer to Substrate
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vi. Lateral Heat-transfer in the film

Temperature distributions in bulk materials

LASER BEAM

: light penetration depth

xhp: heat affected zone

t (diffusion length)
heat heat k: thermal diffusivity t: interaction time

xhp t

The temperature rise is basically controlled by , xhp and r0.

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Temperature distributions in bulk materials

EXAMPLE light penetration depth () for metals: 10-6 - 10-7 mts Thermal diffusivity (k) for metals: 10-4 - 10-5 m/s

LASER TYPE:
For t = 10 ns Xhp ~ 0.1-1m For t = 1ms Xhp ~ 100-300m
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Temperature distributions in bulk materials

How to calculate the temperature as function of the time and depth? q

T T . K + q = cp x x t

T (0, y, z , t ) = 0 x

q ( x) = q0 (1 R )e x
=1/ : absorption coefficient
R: reflectivity; K: thermal conductivity q0: Power density (laser-light flux density [W/cm]) cp: specific heat
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(no heat lost (no radiation)) x q=0 T (,y,z,t) = T0 Temporal condition: T (x,y,z,0) = T0
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q=0

Temperature distributions in bulk materials

In one-dimensional case, for uniform surface irradiation, and constant K, cp, :

T ( x, t ) = T0 +

x (1 R )q0 kt ierfc K 2 kt (1 R)q0 x exp( 2 kt x)erfc kt + 2 K 2 kt 2(1 R )q0 K +

e x

(1 R)q0 x exp( 2 kt + x)erfc kt + 2 K 2 kt

Where: erfc(u) is the complementary error function and ierfc(u) its integral
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Temperature distributions in bulk materials

Complementary error function:

Integral of the complementary error function:

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Temperature distributions in bulk materials

However, different simplified equations can be used in different situations (, xhp and r0): (q = q0 (1-R))

metals

polymers

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Temperature distributions in bulk materials

Heat depth of penetration

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Temperature distributions in bulk materials

General solution for:

Most useful condition: metals, and normal laser beams diameters (mm-cm)
2(1 R )q0 K x kt ierfc 2 kt

T ( x, t ) = T0 +

(during irradiation)

T ( x, t ) = T0 +

2(1 R )q0 x ierfc x kt ierfc 2 (t t p )k K 2 kt

(t t )k p

(after the laser pulse with duration tp)

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Temperature distributions in bulk materials

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Temperature distributions in bulk materials

Example: Laser heating of stainless steel AISI 304: tp = 10-3 s t = tp/2
Melting point

t = tp
Melting point

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Temperature distributions in bulk materials

Example: Laser heating of stainless steel AISI 304: tp = 10-3 s t = 2 tp
Melting point

Melting point

t = 10 tp

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Temperature distributions in bulk materials

Example: Laser heating of stainless steel AISI 304: tp = 10-3 s

Melting point

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Temperature distributions in thin films

q ( x) = q0 ( A1 )e 1 x
=1/ : absorption coefficient
for h> => we can neglect the wave reflected from the film substrate However, heat release does not follow light-absorption law given that the diffusion length >> (up to h ~ 5 m) In case of thicker films it is necessary to consider that heat release is not uniform in depth
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.

q0
KT / x (0, y , z , t ) = 0

(1) (2) x

Temperature distributions in thin films

q ( x) = q0 ( A1 )e 1 x
Considering that r0>>(1)1/2 =>
. 2T1, 2 T1, 2 + q1, 2 ( x, t ) = 1, 2 c p K 2 1, 2 x t
.

q0
KT / x (0, y , z , t ) = 0

T1(x)=Cte

(1) (2) x

(1-R1-A1) = D1 (x = h)

q1 = q0
.

A1 h

(this means that T1=C along x)

q2 = 2 q0 (1 R1 A1 ) exp[ 2 ( x h)]
Observation: R1+A1+D1 = 1
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Temperature distributions in thin films

Considering:

q ( x) = q0 ( A1 )e 1 x at t = 0

q0
KT / x (0, y , z , t ) = 0

T 1( x) = T2 ( x) = T0

T 1(t ) / x = 0 at x = 0
T 1(t ) = T2 (t ) at x = h
k1 T 1(t ) T 2(t ) = k2 x x at x = h

(1) (2) x

T2 (t ) = T0

at x =

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Temperature distributions in thin films

= laser pulse duration
Thin-film temperature-time dependence R1+A1+D1 = 1
D1 = 0 (Transmission) D1 > 0 ; A1>0 (A1+D1 = 1 R1) D2 = 0 D1 > 0 ; A1>0 (A1+D1 = 1 R1) D2 > 0 D1 > 0 ; A1~0 D2 = 0 D1 > 0 ; A1~0 D2 > 0 Functional Materials Functional Materials (D1 = 1 R1)

(D1 = 1 R1)

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Temperature distributions in thin films

Numerical calculations
q0 = 1012 W/m Film thickness = 5m Substrate: Glass
Films temperature

Films temperature

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Temperature distributions in thin films

Cooling of thin-films
Cooling of the film depends on the heating regime For the case of an opaque film on any substrate, the temperature at the film after the laser interaction time () is given by:

h T (t ) = T1 ( ) erf k (t ) 2
T (t ) = T2 ( ) t / (t ) /

< 100ns

T1 ( ) =

q0 A1 1c p1h

> 100 s

T2 ( ) =

2q0 A1 K2

k 2

Example: considering: = 10ns, h=100nm, k2 = 6E-3 cm/s (glass), the time t to cool the film up to 0.1T1 is 100 ns!

Question: why are such cooling-times extremely short?

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Temperature distributions in thin films

Heat transfer to Substrate
1 - During laser irradiation, a more or less significant part of the thermal energy is drained through the substrate 2 - Only a part of the substrate with depth lp is heated up: lp ~ (2 )1/2 3 - The energy efficiency of the treatment can be described as: = 1 Qd/Qa Qa = energy absorbed Qd = energy dissipated 4- The energy efficiency can be written in terms of thermal properties of the substrate and the film:

= 1+

with:

1c p1h 2 c p 2 k 2t
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Temperature distributions in thin films

Heat transfer to Substrate
Qd = 0 Q d = Qa With the rise of (lower ), the film-heating efficiency drops quickly! If:

c h2 1 p1 4 2c p 2 k 2

then > E.g.: 100 nm Cu-film on quartz substrate : < 36 ns Consequently: laser thin-film treatment should be carried out in a pulsed regime at short times. This provides lower energy loss and lower risk of substrate damage!
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Temperature distributions in thin films

Lateral Heat-transfer in the film
r02
2 r0 h
q Generally, the lateral heat flow weakly affects the film heating due to: q
Strong lateral heat flow

r02 > 2 r0 h
From 3D analysis it can be proved that if: r0 > 2 k1 Then the lateral heating is negligible =>
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Temperature distributions in thin films

Lateral Heat-transfer in the film
Example: Cu-Film
5.00 4.50 4.00 3.50

r0 > 2 k1
Without lateral heating

2 k1 [ m]

3.00 2.50 2.00 1.50 1.00 0.50 0.00 0.00

With lateral heating

r0 < 2 k1

10.00

20.00

30.00

40.00

50.00

Laser interaction time [ns]

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Temperature distributions in thin films

Film-to-substrate adhesion
In reality, film to substrate adhesion is not uniform over the contact area (defects, impurities, islands, etc). In case of ideal adhesion, the thermal resistance at the film-substrate interfece is zero. In case of absent of adhesion, the thermal resistance is infinite (adiabatic system). Then, the heat flow through the substrate can be written as:

j=

S1 S1 + S 2

where S1 is the overall area with ideal adehsion S2 the area with zero adhesion
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Temperature distributions in thin films

Film-to-substrate adhesion
j= S1 S1 + S 2
Adiabatic heating

The temperature of a film is lower than an adiabatically heated one but higher than a film in ideal thermal contact! The lower the adhesion, the closer the heating conditions of being adiabatic.

Ideal thermal contact

Question: why is the difference between curves 1 and 2 smaller for short laser interaction-time?
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Laser ablation
Ablation: loss of material => liquid expulsion, vaporization
Vapor consist on: clusters, molecules, atoms, ions, and electrons
Vapor/plasma plume Liquid expulsion

The higher the laser-light intensity the higher the density of species The energy required to remove an atom from a solid can be estimated from:

Ha [J/atom] = HV [J/g] / Ns HV: enthalpy of vaporization Ns=L/M: atom number density (L=Avogadro Number; M=atomic weight)
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Laser ablation - vaporization

However the plume will absorb and scatter the incident laser radiation! Considering only evaporation: Energy input: Einput = [(P P )(1 R) P ] s L
P: laser power Ps: power absorbed by the vapor plume PL: energy looses (heat conduction, radiation, convection, reaction enthalpies, etc.) R: reflectivity : dwell time of the laser beam

P PS Plume

h PL

Evap = A h Lv + Lm + cps (Tm T0 ) + cpl (Tv Tm )

Energy to required to vaporize a volume A.h:

Lv: latent heat of vaporization; Lm: latent heat of melting Cps, Cpl: specific heat of solid and liquid, respectively Tm: melting point; Tv: vaporization point; T0: initial temperature : density h: ablated depth; A: ablated area Saarland University Saarland University

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Laser ablation - vaporization

When plasma is produced, an important part of the energy is absorbed by the plume and the calculation is more complicated
P PS Plume

PL

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Laser ablation - vaporization

Combining both equations:

h
h

(P Ps )(1 R) Pl A [Lv + Lm + cps (Tm T0 ) + cpl (Tv Tm )]

( s )(1 R) l
Hv
t

: laser fluence (J/cm)

This equation is only valid if: l (optical penetration depth) << For laser powers similar to the vaporization energy: Ps ~ 0 if h ~ diff. length => bulk heating is minimized => PL ~ 0

( )(1 R)
Hv

Ablation rate is proportional to Laser fluence (relative low energy densities, without considering liquid expulsion)
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Laser ablation - vaporization

One-dimensional model (surface temperature ): Considerations: We ignore any liquid layer Tvs is the temperature at the solid-vapor interface and vvs is its velocity Any attenuation of incident laser light by the plume is ignored

(1) Ts = T0 +

1 (1 R)P v (Lv + Lm ) 2cp vs

(2) vvs = v0 exp v T s

v =

Ev Hva kB kB

vo is in the order of the sound velocity within the solid v is the activation energy for vaporization and can be replaced by the enthalpy of vaporization per atom/molecule

we need to solve equations (1) and (2) simultaneously

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Laser ablation
Influence of liquid layer: The recoil pressure (prec) is originated because of the momentum conservation of the evaporated species. This is in the order of the saturated vapor pressure at Ts (psat) and increases nonlinearly with P (W/cm)

Liquid expulsion

Vapor Recoil force

prec ~ psat (Ts )

The melt-ejection flux (J) is given by: (w = laser-beam radius)

Jm ~

1 1/ 4 prec w
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