SPP20N65C3, SPA20N65C3 SPI20N65C3 Cool MOS Power Transistor

Feature New revolutionary high voltage technology Worldwide best R DS(on) in TO 220 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability Improved transconductance
P-TO220-3-31
1 2 3

VDS @ Tjmax RDS(on) ID

P-TO262-3-1 P-TO220-3-31

650 0.19 20.7

V A

P-TO220-3-1

Type

Package

Ordering Code

SPP20N65C3 SPA20N65C3 SPI20N65C3

Maximum Ratings Parameter

P-TO220-3-1 P-TO262-3-1

Q67040-S4556 Q67040-S4560

Marking 20N65C3 20N65C3 20N65C3

P-TO220-3-31 Q67040-S4555

Symbol ID

Value SPP_I SPA

Unit

Continuous drain current

TC = 25 C TC = 100 C

A 20.7 13.1 20.71) 13.11) 62.1 690 1 7 20

30

Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse

ID=3.5A, VDD=50V

ID puls EAS EAR IAR VGS VGS Ptot

62.1 690 1 7 20
30

A mJ

Avalanche energy, repetitive tAR limited by Tjmax2)

ID=7A, VDD =50V

Avalanche current, repetitive tAR limited by Tjmax

Gate source voltage

A V W

Gate source voltage AC (f >1Hz)

Power dissipation, TC = 25C

208

34.5

Operating and storage temperature

T j , Tstg

-55...+150

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Maximum Ratings Parameter Symbol Value Unit

Drain Source voltage slope

VDS = 480 V, ID = 20.7 A, T j = 125 C

dv/dt

50

V/ns

Thermal Characteristics Parameter Symbol min. RthJC Values typ. max. Unit

Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Soldering temperature, 1.6 mm (0.063 in.) from case for 10s 4)

35 -

0.6 3.6 62 80 62 260

K/W

RthJC_FP
RthJA

RthJA_FP RthJA

Tsold

Electrical Characteristics, at Tj=25C unless otherwise specified Parameter Symbol Conditions min. Values typ. max. Unit

Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 650 5) Drain-Source avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) I DSS
ID=1000A, VGS=VDS VDS=600V, V GS=0V, Tj=25C Tj=150C

730 3 0.1 0.16 0.43 0.54

3.9

V(BR)DS VGS=0V, ID=7A

2.1 -

A 1 100 100 0.19 nA

Gate-source leakage current

I GSS

VGS=20V, V DS=0V VGS=10V, ID=13.1A Tj=25C Tj=150C

Drain-source on-state resistance RDS(on)

Gate input resistance

RG

f=1MHz, open drain

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Electrical Characteristics Parameter Transconductance Input capacitance Output capacitance Reverse transfer capacitance Symbol gfs Ciss Coss Crss
VGS=0V, VDS=0V to 480V

Conditions min.
VDS2*ID*R DS(on)max, ID=13.1A VGS=0V, VDS=25V, f=1MHz

Values typ. max.

Unit

17.5 2400 780 50 83 160 10

S pF

Effective output capacitance,6) Co(er) energy related Effective output capacitance,7) Co(tr) time related
Turn-on delay time td(on)

VDD=380V, VGS=0/13V, ID=20.7A, RG=3.6, Tj =125

ns

Rise time Turn-off delay time Fall time

tr td(off) tf

VDD=380V, VGS=0/13V, ID=20.7A, RG=3.6

5 67 4.5

100 12

Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Gate charge total Gate plateau voltage Qgd Qg

V DD=480V, ID=20.7A

11 33 87 5.5

114 -

nC

V DD=480V, ID=20.7A, V GS=0 to 10V

V(plateau) VDD=480V, ID=20.7A

1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as P =E *f. AR AV 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. 4Soldering temperature for TO-263: 220C, reflow 5HTRB @ 1000h, 600V, T
jmax resp. accelerated HTRB @ 168h, 600V, Tj = 175C

according to JEDEC A108, MIL-STD 750/1038-1040, 1042 6C o(er) is a fixed capacitance that gives the same stored energy as Coss while V DS is rising from 0 to 80% VDSS. 7C
o(tr)

is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
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Electrical Characteristics Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current
Typical Transient Thermal Characteristics Symbol SPP_B Rth1 Rth2 Rth3 Rth4 Rth5 Rth6 0.00769 0.015 0.029 0.114 0.136 0.059
Tj

Symbol IS ISM VSD trr Qrr Irrm dirr /dt

Conditions min.
TC=25C

Values typ. 1 500 11 70 1400 max. 20.7 62.1 1.2 800 -

Unit A

V GS=0V, IF=IS V R=480V, IF=IS , diF/dt=100A/s

V ns C A A/s

Tj=25C

Value SPA 0.00769 0.015 0.029 0.163 0.323 2.526

R th1

Unit K/W

Symbol Cth1 Cth2 Cth3 Cth4 Cth5 Cth6

R th,n
T case

Value SPP_B 0.0003763 0.001411 0.001931 0.005297 0.012 0.091 SPA 0.0003763 0.001411 0.001931 0.005297 0.008453 0.412

Unit Ws/K

E xternal H eatsink

P tot (t) C th1 C th2 C th,n

T am b

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1 Power dissipation Ptot = f (TC)
240
SPP20N65C3

2 Power dissipation FullPAK

Ptot = f (TC)
35

W
200 180 25

Ptot

140 120 100 80 60 40 20 0 0 20 40 60 80 100 120

Ptot
20 15 10 5

160

160

0 0

20

40

60

80

100

120

TC

C 160 TC

3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC=25C

10
2

4 Safe operating area FullPAK ID = f (VDS) parameter: D = 0, TC = 25C

10 2

10 1

10 1

ID

10 0

ID
10 0

10 -1

tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC

10 -1

tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC

10 -2 0 10

10

10

V VDS

10

10 -2 0 10

10

10

10 V VDS

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5 Transient thermal impedance FullPAK ZthJC = f (tp) parameter: D = tp/t
10 1

6 Typ. output characteristic ID = f (VDS); Tj =25C parameter: tp = 10 s, VGS

80

K/W

20V 10V 8V
7V

10 0

60

ZthJC

ID

50

6,5V

10 -1

10 -2

D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse

40
6V

30
5,5V

20
5V

10 10 -3 -6 10

4,5V

10

-5

10

-4

10

-3

10

-2

10

-1

1 s 10

0 0

10

15

V VDS

25

tp

7 Typ. output characteristic ID = f (VDS); Tj =150C parameter: tp = 10 s, VGS

45

8 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150C, VGS

1.5

20V 10V 7V
6V

1.3

35 30 25 20

RDS(on)

1.2 1.1 1 0.9

5.5V

5V

0.8 0.7

4V 4.5V 5V 5.5V 6V 6.5V 20V

ID

15 10 5 0 0
4.5V

0.6 0.5 0.4

10 12 14 16 18 20 22 V 25

0.3 0

10

15

20

25

30

VDS

40 A ID

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9 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 13.1 A, VGS = 10 V
1.1
SPP20N65C3

10 Typ. transfer characteristics ID = f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 10 s

80

0.9

A
25C

RDS(on)

0.8

60

ID

0.7 0.6

50

40 0.5 0.4 0.3

98%
150C

30

20

0.2 0.1 0 -60 -20 20

typ

10

60

100

180

0 0

Tj

9 V VGS

11 Typ. gate charge

12 Forward characteristics of body diode IF = f (VSD) parameter: Tj , tp = 10 s

10 2
SPP20N65C3

VGS = f (QGate) parameter: ID = 20.7 A pulsed

16
SPP20N65C3

12

VGS

IF
10 0 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -1 0

10

0,2 VDS max

10 1 0,8 VDS max

0 0

20

40

60

80

100

nC

140

0.4

0.8

1.2

1.6

2.4 V

QGate
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13 Typ. switching time t = f (ID), inductive load, Tj =125C par.: VDS =380V, VGS=0/+13V, RG=3.6
10 2
td(off)

14 Typ. switching time t = f (RG ), inductive load, Tj=125C par.: VDS =380V, VGS=0/+13V, ID=20.7 A
10 3

ns

td(off)

ns
10 2

10 1
tf

td(on)

td(on)

10 1
tr

tr tf
10 0 0 4 8 12 16

A
ID

24

10 0 0

10

15

20

25

30

40 RG

15 Typ. drain current slope

16 Typ. drain source voltage slope

di/dt = f(RG ), inductive load, Tj = 125C

par.: VDS =380V, VGS=0/+13V, ID=20.7A
5000

dv/dt = f(RG), inductive load, Tj = 125C

par.: VDS =380V, VGS=0/+13V, ID=20.7A
150

A/s V/ns
4000 3500
dv/dt(off)

dv/dt
di/dt(on)

di/dt

100

3000 2500 2000 1500 1000 500 0 0

75

50

dv/dt(on)

di/dt(off)

25

10

15

20

25

30

40 RG

0 0

10

15

20

25

30

40 RG

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17 Typ. switching losses E = f (ID), inductive load, Tj=125C par.: VDS =380V, VGS=0/+13V, RG=3.6
0.08

18 Typ. switching losses E = f(RG), inductive load, T j=125C par.: VDS =380V, VGS=0/+13V,ID =11A
0.4

mWs

*) Eon includes SPD06S60 diode commutation losses

mWs

*) Eon includes SPD06S60 diode commutation losses

0.06

0.3
Eoff

Eoff

0.04

0.05

0.25

0.2
Eon*

0.03
Eon*

0.15

0.02

0.1

0.01

0.05

0 0

12

15

A
ID

21

0 0

10

15

20

25

30

40 RG

19 Avalanche SOA IAR = f (tAR) par.: Tj 150 C

A
7

20 Avalanche energy EAS = f (Tj) par.: ID = 3.5 A, VDD = 50 V

700

6 5.5

mJ

4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 -3 10 10

-2

Tj(Start)=25C

E AS
400 300 200 100

500

IAR

Tj(Start)=125C

10

-1

10

10

10

s 10 tAR

0 20

40

60

80

100

120

160 C Tj

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21 Drain-source breakdown voltage 22 Avalanche power losses PAR = f (f ) parameter: EAR =1mJ
785
SPP20N65C3

V(BR)DSS = f (Tj)

500

V
745 725 705 685 665 645 625 605 585 -60

W
400 350 300 250 200 150 100 50 0 4 10
5 6

V(BR)DSS

-20

20

60

100

180

PAR

10

Hz f

10

Tj

23 Typ. capacitances C = f (VDS) parameter: VGS =0V, f=1 MHz

10 5

24 Typ. Coss stored energy Eoss=f(VDS)

14

pF
10 4

12
Ciss

11

E oss
Coss Crss

10 9 8 7

10 3

10 2

6 5 4

10 1

3 2 1

10 0 0

100

200

300

400

600

0 0

100

200

300

400

600

VDS

VDS

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Definition of diodes switching characteristics

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P-TO-220-3-1
B

10 0.4 3.7 0.2

A
1.270.13

4.44

15.38 0.6

2.8 0.2

5.23 0.9

13.5 0.5

3x 0.75 0.1
1.17 0.22

0.5 0.1
2.510.2

2x 2.54

0.25

A B C

All metal surfaces tin plated, except area of cut. Metal surface min. x=7.25, y=12.3

9.98 0.48

0.05

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P-TO-262-3-1 (I2-PAK)
10 0.2

0...0.3

4.4

1 0.3

8.5
1)

1)

1.27

11.6 0.3

2.4

4.55 0.2

13.5 0.5

0...0.15
1.05 3 x 0.75 0.1

0.5 0.1
2.4

2 x 2.54
1)

0.25

A B C

Typical Metal surface min. X = 7.25, Y = 6.9 All metal surfaces tin plated, except area of cut.

P-TO-220-3-31 (FullPAK)

Please refer to mounting instructions (application note AN-TO220-3-31-01)

9.25 0.2

7.55

0.05

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Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Mnchen Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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